KR20000062534A - 다결정 실리콘 막의 형성 방법 - Google Patents
다결정 실리콘 막의 형성 방법 Download PDFInfo
- Publication number
- KR20000062534A KR20000062534A KR1020000005956A KR20000005956A KR20000062534A KR 20000062534 A KR20000062534 A KR 20000062534A KR 1020000005956 A KR1020000005956 A KR 1020000005956A KR 20000005956 A KR20000005956 A KR 20000005956A KR 20000062534 A KR20000062534 A KR 20000062534A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- cap
- forming
- cap film
- thin film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract description 45
- 239000010408 film Substances 0.000 claims abstract description 129
- 239000010409 thin film Substances 0.000 claims abstract description 60
- 230000003197 catalytic effect Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 8
- 230000008025 crystallization Effects 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 239000003054 catalyst Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000001737 promoting effect Effects 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 abstract description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 33
- 239000011521 glass Substances 0.000 abstract description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000013039 cover film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007715 excimer laser crystallization Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Catalysts (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (12)
- 절연 표면을 가진 기판상에 비단결정 반도체 막을 형성하는 단계,상기 반도체 막의 결정화를 촉진시키기 위한 촉매 원소를 함유하며 투광성 절연재료로 된 캡막을 상기 반도체 막상에 형성하는 단계,상기 캡막을 통해 상기 반도체 막상에 레이저빔을 조사하는 단계, 및상기 레이저빔의 상기 조사 단계후에 상기 캡막을 제거하는 단계를 구비하는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 캡막의 상기 형성 단계 후에 상기 촉매 원소가 상기 캡막에 첨가되는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 캡막의 상기 형성 단계 도중에 상기 촉매 원소를 상기 캡막에 첨가시키는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 2 항에 있어서, 상기 촉매 원소가 이온 주입 방법을 사용하여 상기 캡막에 첨가되는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 3 항에 있어서, 상기 촉매 원소가, 스퍼터링 방법을 사용하여 상기 캡막을 형성할 때, 동시에 상기 캡막에 첨가되는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 3 항에 있어서, 상기 촉매 원소가 고온 와이어 CVD 방법을 사용하여 상기 캡막에 첨가되는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 캡막이 10㎚ 이상의 두께를 가지는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 캡막이 할로겐 원소를 함유한 에칭 가스를 사용하는 건식 에칭 방법에 의해 제거되는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 캡막의 상기 제거 단계가 RCA 세정을 포함하는 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 촉매 원소가 Ni, Pt, Pd, Co, Fe, Cu, Au, Ag, Cr 및 그 혼합물로 이루어진 그룹에서부터 선택된 것임을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 캡막이 실리콘 산화막인 것을 특징으로 하는 반도체 박막 형성 방법.
- 제 1 항에 있어서, 상기 레이저빔은 엑시머 레이저빔인 것을 특징으로 하는 반도체 박막 형성 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03099699A JP3331999B2 (ja) | 1999-02-09 | 1999-02-09 | 半導体薄膜の製造方法 |
JP99-30996 | 1999-02-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000062534A true KR20000062534A (ko) | 2000-10-25 |
KR100392120B1 KR100392120B1 (ko) | 2003-07-22 |
Family
ID=12319218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-0005956A KR100392120B1 (ko) | 1999-02-09 | 2000-02-09 | 다결정 실리콘 막의 형성 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6391747B1 (ko) |
JP (1) | JP3331999B2 (ko) |
KR (1) | KR100392120B1 (ko) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020089959A (ko) * | 2001-05-25 | 2002-11-30 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 박막트랜지스터의 제조방법 및 이를 적용한액정표시소자 |
KR20030012797A (ko) * | 2001-08-01 | 2003-02-12 | 후지쯔 가부시끼가이샤 | 다결정 구조막 및 그 제조 방법 |
KR100425159B1 (ko) * | 2001-05-25 | 2004-03-30 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 박막트랜지스터의 제조방법 및 이를 적용한액정표시소자 |
KR100470021B1 (ko) * | 2001-12-28 | 2005-02-04 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 방법과 박막트랜지스터 제조방법 |
KR100666564B1 (ko) * | 2004-08-04 | 2007-01-09 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
KR100726129B1 (ko) * | 2000-10-26 | 2007-06-12 | 엘지.필립스 엘시디 주식회사 | 다결정실리콘 박막트랜지스터 소자 및 그 제조방법 |
KR100761345B1 (ko) * | 2001-08-17 | 2007-09-27 | 엘지.필립스 엘시디 주식회사 | 결정질 실리콘의 제조방법 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001147446A (ja) * | 1999-11-19 | 2001-05-29 | Hitachi Ltd | 液晶表示装置とその製造方法 |
KR100439347B1 (ko) * | 2001-07-04 | 2004-07-07 | 주승기 | 실리콘 박막의 결정화 방법 및 이를 이용한 반도체 소자제조 방법 |
KR100556346B1 (ko) * | 2001-12-28 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | 금속 배선 형성방법 |
EP1437683B1 (en) * | 2002-12-27 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | IC card and booking account system using the IC card |
US7652359B2 (en) * | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
US7566001B2 (en) * | 2003-08-29 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | IC card |
KR100611764B1 (ko) | 2004-08-20 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
US7683373B2 (en) | 2004-10-05 | 2010-03-23 | Samsung Mobile Display Co., Ltd. | Thin film transistor and method of fabricating the same |
KR101309111B1 (ko) * | 2006-07-27 | 2013-09-17 | 삼성전자주식회사 | 폴리실리콘 패턴의 형성방법과 폴리실리콘 패턴을 포함한다층 교차점 저항성 메모리 소자 및 그의 제조방법 |
JP2007288159A (ja) * | 2007-03-12 | 2007-11-01 | Trustees Of Columbia Univ In The City Of New York | 逐次的横方向結晶化法による処理中及び処理後のシリコンフィルムの表面平坦化法 |
US7960261B2 (en) | 2007-03-23 | 2011-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor |
US9177811B2 (en) | 2007-03-23 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN103681244B (zh) * | 2013-12-25 | 2016-09-14 | 深圳市华星光电技术有限公司 | 低温多晶硅薄膜的制备方法及其制作系统 |
CN105140114A (zh) * | 2015-09-10 | 2015-12-09 | 深圳市华星光电技术有限公司 | 基板制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521339A (ja) | 1991-07-10 | 1993-01-29 | Ricoh Co Ltd | 薄膜半導体装置とその製法 |
US5639698A (en) * | 1993-02-15 | 1997-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
JP3359690B2 (ja) | 1993-03-12 | 2002-12-24 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
TW264575B (ko) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
JP2546524B2 (ja) | 1993-12-08 | 1996-10-23 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
TW279275B (ko) * | 1993-12-27 | 1996-06-21 | Sharp Kk | |
JP3190517B2 (ja) | 1994-05-13 | 2001-07-23 | 株式会社半導体エネルギー研究所 | 半導体の作製方法 |
JPH0869967A (ja) | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2776276B2 (ja) | 1994-11-10 | 1998-07-16 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
JP3765902B2 (ja) | 1997-02-19 | 2006-04-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法および電子デバイスの作製方法 |
JPH1167663A (ja) | 1997-08-18 | 1999-03-09 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1999
- 1999-02-09 JP JP03099699A patent/JP3331999B2/ja not_active Expired - Fee Related
-
2000
- 2000-02-07 US US09/498,619 patent/US6391747B1/en not_active Expired - Lifetime
- 2000-02-09 KR KR10-2000-0005956A patent/KR100392120B1/ko active IP Right Grant
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100726129B1 (ko) * | 2000-10-26 | 2007-06-12 | 엘지.필립스 엘시디 주식회사 | 다결정실리콘 박막트랜지스터 소자 및 그 제조방법 |
KR20020089959A (ko) * | 2001-05-25 | 2002-11-30 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 박막트랜지스터의 제조방법 및 이를 적용한액정표시소자 |
KR100425159B1 (ko) * | 2001-05-25 | 2004-03-30 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 박막트랜지스터의 제조방법 및 이를 적용한액정표시소자 |
KR20030012797A (ko) * | 2001-08-01 | 2003-02-12 | 후지쯔 가부시끼가이샤 | 다결정 구조막 및 그 제조 방법 |
KR100761345B1 (ko) * | 2001-08-17 | 2007-09-27 | 엘지.필립스 엘시디 주식회사 | 결정질 실리콘의 제조방법 |
KR100470021B1 (ko) * | 2001-12-28 | 2005-02-04 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 방법과 박막트랜지스터 제조방법 |
KR100666564B1 (ko) * | 2004-08-04 | 2007-01-09 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP3331999B2 (ja) | 2002-10-07 |
KR100392120B1 (ko) | 2003-07-22 |
JP2000228360A (ja) | 2000-08-15 |
US6391747B1 (en) | 2002-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100392120B1 (ko) | 다결정 실리콘 막의 형성 방법 | |
US6670638B2 (en) | Liquid crystal display element and method of manufacturing the same | |
US6506669B1 (en) | Method of fabricating a thin film transistor | |
KR100473996B1 (ko) | 비정질 실리콘의 결정화 방법 | |
JP2006066860A (ja) | 薄膜トランジスタ製造方法 | |
JPH1140501A (ja) | 半導体装置の製造方法及び半導体装置 | |
JPH07235490A (ja) | 多結晶シリコン薄膜形成方法およびmosトランジスタのチャネル形成方法 | |
JPH10229048A (ja) | 半導体装置の作製方法 | |
JP4084039B2 (ja) | 薄膜半導体装置及びその製造方法 | |
US6541323B2 (en) | Method for fabricating polysilicon thin film transistor | |
KR100611761B1 (ko) | 박막트랜지스터 제조 방법 | |
JP2000357798A (ja) | 薄膜トランジスタ及びその製造方法 | |
KR100305255B1 (ko) | 다결정실리콘박막의제조방법 | |
JP2776276B2 (ja) | 薄膜トランジスタの製造方法 | |
JPH06260644A (ja) | 半導体装置の製造方法 | |
JP3090847B2 (ja) | 半導体基板の製造方法および半導体装置の製造方法 | |
JPS63119576A (ja) | 薄膜トランジスターの活性領域の形成方法 | |
JPH0888172A (ja) | 多結晶シリコン膜の作製方法 | |
US6733584B1 (en) | Method of forming crystalline silicon film | |
JPH1154434A (ja) | 多結晶シリコン膜及び半導体装置 | |
JPH0319340A (ja) | 半導体装置の製造方法 | |
JP4278857B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
JPH09148251A (ja) | 半導体および半導体装置の作製方法 | |
JP3684909B2 (ja) | 薄膜トランジスタ作成方法 | |
JPH05283431A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130705 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20140701 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20150626 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20160704 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20170619 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20180619 Year of fee payment: 16 |