JPH11501459A - 高密度トレンチ形dmosトランジスタ素子 - Google Patents
高密度トレンチ形dmosトランジスタ素子Info
- Publication number
- JPH11501459A JPH11501459A JP9509501A JP50950197A JPH11501459A JP H11501459 A JPH11501459 A JP H11501459A JP 9509501 A JP9509501 A JP 9509501A JP 50950197 A JP50950197 A JP 50950197A JP H11501459 A JPH11501459 A JP H11501459A
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- substrate
- effect transistor
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000002513 implantation Methods 0.000 claims abstract description 19
- 230000005669 field effect Effects 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 25
- 239000007943 implant Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 241000499908 Milla biflora Species 0.000 claims 2
- 241000282376 Panthera tigris Species 0.000 claims 2
- 210000000746 body region Anatomy 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 210000004027 cell Anatomy 0.000 description 29
- 239000002019 doping agent Substances 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 13
- 239000005380 borophosphosilicate glass Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 241000183290 Scleropages leichardti Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.複数のセルからなる電界効果トランジスタ素子であって、 各セルが、 第1の導電型からなり、主面を有する基板と、 前記基板の上部に延在し、前記基板より低い濃度の前記第1の導電型からな るドリフト領域と、 前記ドリフト領域の上部に延在している第2の導電型からなる基体部領域と 、 前記基体部領域で前記基板の主面から前記ドリフト領域の中に埋め込まれる 導電性ゲート電極と、 前記基体部領域内の前記基板の前記主面で前記導電性ゲート電極に隣接して 形成される前記第1の導電型からなるソース領域とを有すること特徴とし、 前記基体部領域のそれ以外の部分より高くドープされ、前記導電性ゲート電極 よりも前記ドリフト領域の中により深く延在する前記基体部領域の一部を有する ことを特徴とし、 前記主面の表面積1平方インチ当たり、少なくとも1200万のセルを含むこ とを特徴とする電界効果トランジスタ素子。 2.前記主面での前記基体部領域内に形成され、前記第2の導電型からなり、前 記基体部領域の隣接する部分より大きいドーピング濃度を有することを特徴とす る請求項1に記載の電界効果トランジスタ素子。 3.前記基体部領域の前記一部が、より高くドープされ、2×1019/cm3の 濃度を有し、前記ドリフト領域内の前記導電性ゲート電極より少なくとも0.5 μmだけ深く埋め込まれることを特徴とする請求項1に記載の電界効果トランジ スタ素子。 4.電界効果トランジスタ素子を作製するための方法であって、 第1の導電型からなり、主面を有する基板を提供する過程と、 前記基板上に前記第1の導電型のエピタキシャル層を成長させる過程と、 前記主面から前記エピタキシャル層内に延在するトレンチをエッチングする過 程と、 前記トレンチを導電性材料で埋める過程と、 第2の導電型の基体部領域を注入し、前記エピタキシャル層主面から前記エピ タキシャル層内部に延在させる過程と、 前記主面の一部をマスクする過程と、 前記基体部領域の注入のエネルギーより高いエネルギーで、前記第2の導電型 の深い基体部領域を注入し、前記基体部より深く前記エピタキシャル層内に、前 記主面のマスクされた部分により画定される前記深い基体部領域を延在させる過 程とを有することを特徴とする電界効果トランジスタ素子を作製するための方法 。 5.前記より高いエネルギー注入過程が、少なくとも100KeVのエネルギー を用い、前記深い基体部領域が、前記主面から少なくとも1.5μmの深さに延 在することを特徴とする請求項4に記載の方法。 6.前記電界効果トランジスタ素子の1つの電界効果トランジスタが、同時に形 成されるそのような複数のセルの1つであって、主面上の1平方インチ当たりに 形成されるそのようなセルが、少なくとも1200万セルあることを特徴とする 請求項4に記載の方法。 7.電界効果トランジスタ素子であって、 第1の導電型の基板と、 前記基板より低濃度でドープされ、前記基板上に形成される前記第1の導電型 の第1のドリフト領域と、 前記基板と前記第1のドリフト領域の濃度の中間にある濃度でドープ され、前記第1のドリフト領域上に形成される前記第1の導電型の第2のドリフ ト領域と、 第2の導電型からなり、前記第2のドリフト領域上に形成される基体部領域と 、 前記基体部領域の主面から、前記第1のドリフト領域内に埋め込まれる導電性 ゲート電極と、 前記基体部領域の前記主面で前記導電性ゲート電極に隣接する前記第1の導電 型のソース領域とを有することを特徴とする電界効果トランジスタ素子。 8.前記基体部領域の一部が、それ以外の部分より高くドープされ、前記基体部 領域のそれ以外の部分より第2のドリフト領域内に深く延在することを特徴とす る請求項7に記載の電界効果トランジスタ素子。 9.前記主面で、前記基体部領域内に形成され、前記基体部領域内の隣接する部 分より高いドーピング濃度でドープされる、前記第2の導電型からなる基体部接 点領域を有することを更なる特徴とする請求項7に記載の電界効果トランジスタ 素子。 10.前記トランジスタ素子の1つのトランジスタの表面積が1平方インチ(の 1200万分の1)より小さいことを特徴とする請求項7に記載の電界効果トラ ンジスタ素子。 11.前記第2のドリフト領域の最大厚さが7μmであることを特徴とする請求 項7に記載の電界効果トランジスタ素子。 12.前記基体部領域の前記より高いドープ領域が、前記第1のドリフト領域の 1.5μm以内に延在することを特徴とする請求項8に記載の電界効果トランジ スタ素子。 13.前記基体部領域の前記より高いドープ領域が、少なくとも1019/cm3 のドーピング濃度を有することを特徴とする請求項8に記載の 電界効果トランジスタ素子。 14.電界効果トランジスタを作製するための方法であって、 第1の導電型の基板を提供するための過程と、 前記基板上に前記第1の導電型の第1のエピタキシャル層を成長させる過程と 、 前記第1のエピタキシャル層上に、前記第1の導電型の第2のエピタキシャル 層を成長させる過程と、 前記第2のエピタキシャル層内に、第2の導電型からなり、前記第2のエピタ キシャル層の主面に延在する基体部領域を形成する改定と、 前記第1のエピタキシャル層内の前記主面から埋め込まれる導電性ゲート電極 を形成する過程と、 前記導電性ゲート電極に隣接して、前記第1の導電型からなり、前記主面から 前記基体部領域内に延在するソース領域を形成する過程とを有することを特徴と する電界効果トランジスタを作製方法。 15.前記第2の導電型からなり、前記基体部領域より高いドーピング濃度を有 し、前記基体部領域より前記第1のエピタキシャル層内に深く延在する深い基体 部領域を形成する過程をさらに有することを特徴とする請求項14に記載の方法 。 16.前記主面で前記基体部領域内に、前記第2の導電型からなり、前記基体部 領域の隣接する部分より高いドーピング濃度を有する基体部接点領域を形成する 過程を有することを特徴とする請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US533,814 | 1995-08-21 | ||
US08/533,814 US5689128A (en) | 1995-08-21 | 1995-08-21 | High density trenched DMOS transistor |
PCT/US1996/013289 WO1997007547A1 (en) | 1995-08-21 | 1996-08-21 | High density trenched dmos transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11501459A true JPH11501459A (ja) | 1999-02-02 |
JP3109837B2 JP3109837B2 (ja) | 2000-11-20 |
Family
ID=24127550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP09509501A Expired - Lifetime JP3109837B2 (ja) | 1995-08-21 | 1996-08-21 | 電界効果トランジスタ素子及びその作製方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5689128A (ja) |
EP (1) | EP0958611A1 (ja) |
JP (1) | JP3109837B2 (ja) |
KR (1) | KR100306342B1 (ja) |
WO (1) | WO1997007547A1 (ja) |
Cited By (14)
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JP2004022941A (ja) * | 2002-06-19 | 2004-01-22 | Toshiba Corp | 半導体装置 |
WO2007060716A1 (ja) * | 2005-11-22 | 2007-05-31 | Shindengen Electric Manufacturing Co., Ltd. | トレンチゲートパワー半導体装置 |
JP2008159916A (ja) * | 2006-12-25 | 2008-07-10 | Sanyo Electric Co Ltd | 半導体装置 |
JP2008218711A (ja) * | 2007-03-05 | 2008-09-18 | Renesas Technology Corp | 半導体装置およびその製造方法、ならびに電源装置 |
JP2009117593A (ja) * | 2007-11-06 | 2009-05-28 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
US5998837A (en) * | 1995-06-02 | 1999-12-07 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode having adjustable breakdown voltage |
US6140678A (en) * | 1995-06-02 | 2000-10-31 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode |
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US5821583A (en) * | 1996-03-06 | 1998-10-13 | Siliconix Incorporated | Trenched DMOS transistor with lightly doped tub |
US6040599A (en) | 1996-03-12 | 2000-03-21 | Mitsubishi Denki Kabushiki Kaisha | Insulated trench semiconductor device with particular layer structure |
US5932911A (en) * | 1996-12-13 | 1999-08-03 | Advanced Micro Devices, Inc. | Bar field effect transistor |
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US6570185B1 (en) * | 1997-02-07 | 2003-05-27 | Purdue Research Foundation | Structure to reduce the on-resistance of power transistors |
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US6057558A (en) * | 1997-03-05 | 2000-05-02 | Denson Corporation | Silicon carbide semiconductor device and manufacturing method thereof |
US6037628A (en) * | 1997-06-30 | 2000-03-14 | Intersil Corporation | Semiconductor structures with trench contacts |
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US5897343A (en) * | 1998-03-30 | 1999-04-27 | Motorola, Inc. | Method of making a power switching trench MOSFET having aligned source regions |
US6150200A (en) * | 1998-04-03 | 2000-11-21 | Motorola, Inc. | Semiconductor device and method of making |
US6096606A (en) * | 1998-05-04 | 2000-08-01 | Motorola, Inc. | Method of making a semiconductor device |
US6084264A (en) * | 1998-11-25 | 2000-07-04 | Siliconix Incorporated | Trench MOSFET having improved breakdown and on-resistance characteristics |
US6462376B1 (en) | 1999-01-11 | 2002-10-08 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Power MOS element and method for producing the same |
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US6198127B1 (en) * | 1999-05-19 | 2001-03-06 | Intersil Corporation | MOS-gated power device having extended trench and doping zone and process for forming same |
US7084456B2 (en) * | 1999-05-25 | 2006-08-01 | Advanced Analogic Technologies, Inc. | Trench MOSFET with recessed clamping diode using graded doping |
DE19925880B4 (de) * | 1999-06-07 | 2006-11-30 | Infineon Technologies Ag | Avalanchefeste MOS-Transistorstruktur |
WO2000075966A2 (en) * | 1999-06-09 | 2000-12-14 | International Rectifier Corporation | Dual epitaxial layer for high voltage vertical conduction power mosfet devices |
US20030060013A1 (en) * | 1999-09-24 | 2003-03-27 | Bruce D. Marchant | Method of manufacturing trench field effect transistors with trenched heavy body |
US6348712B1 (en) * | 1999-10-27 | 2002-02-19 | Siliconix Incorporated | High density trench-gated power MOSFET |
US6246090B1 (en) | 2000-03-14 | 2001-06-12 | Intersil Corporation | Power trench transistor device source region formation using silicon spacer |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
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GB0028031D0 (en) | 2000-11-17 | 2001-01-03 | Koninkl Philips Electronics Nv | Trench-gate field-effect transistors and their manufacture |
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US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
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US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
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US7446374B2 (en) * | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
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EP2208229A4 (en) | 2007-09-21 | 2011-03-16 | Fairchild Semiconductor | SUPER TRANSITION STRUCTURES FOR PERFORMANCE ARRANGEMENTS AND MANUFACTURING PROCESSES |
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US20100013009A1 (en) * | 2007-12-14 | 2010-01-21 | James Pan | Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
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US8159021B2 (en) * | 2008-02-20 | 2012-04-17 | Force-Mos Technology Corporation | Trench MOSFET with double epitaxial structure |
US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
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US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
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US9722041B2 (en) | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
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US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
US20150108568A1 (en) * | 2013-10-21 | 2015-04-23 | Vishay-Siliconix | Semiconductor structure with high energy dopant implantation |
US20150118810A1 (en) * | 2013-10-24 | 2015-04-30 | Madhur Bobde | Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path |
JP6479347B2 (ja) * | 2014-06-06 | 2019-03-06 | ローム株式会社 | SiCエピタキシャルウェハの製造装置、およびSiCエピタキシャルウェハの製造方法 |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
WO2016014224A1 (en) * | 2014-07-25 | 2016-01-28 | United Silicon Carbide, Inc. | Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same |
WO2016028944A1 (en) | 2014-08-19 | 2016-02-25 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
US10234486B2 (en) | 2014-08-19 | 2019-03-19 | Vishay/Siliconix | Vertical sense devices in vertical trench MOSFET |
JP6514035B2 (ja) * | 2015-05-27 | 2019-05-15 | 株式会社豊田中央研究所 | 半導体装置 |
CN106257632B (zh) * | 2015-06-19 | 2019-08-06 | 北大方正集团有限公司 | Vdmos器件的制作方法及vdmos器件 |
US10804388B2 (en) * | 2016-01-20 | 2020-10-13 | Rohm Co., Ltd. | Semiconductor device |
JP6693020B2 (ja) * | 2017-03-28 | 2020-05-13 | 豊田合成株式会社 | 半導体装置の製造方法 |
JP2018207057A (ja) * | 2017-06-09 | 2018-12-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP7275573B2 (ja) * | 2018-12-27 | 2023-05-18 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US20220293786A1 (en) * | 2021-03-10 | 2022-09-15 | Nami MOS CO., LTD. | An improved shielded gate trench mosfet with low on-resistance |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153469A (en) * | 1981-03-18 | 1982-09-22 | Toshiba Corp | Insulated gate type field effect transistor |
US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
JP2689606B2 (ja) * | 1989-05-24 | 1997-12-10 | 富士電機株式会社 | 絶縁ゲート電界効果型トランジスタの製造方法 |
US4931408A (en) * | 1989-10-13 | 1990-06-05 | Siliconix Incorporated | Method of fabricating a short-channel low voltage DMOS transistor |
US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
US5304831A (en) * | 1990-12-21 | 1994-04-19 | Siliconix Incorporated | Low on-resistance power MOS technology |
DE69223128T2 (de) * | 1991-07-26 | 1998-07-09 | Denso Corp | Verfahren zur herstellung vertikaler mosfets |
GB9215653D0 (en) * | 1992-07-23 | 1992-09-09 | Philips Electronics Uk Ltd | A method of manufacturing a semiconductor device comprising an insulated gate field effect device |
KR940004847A (ko) * | 1992-08-04 | 1994-03-16 | 리차드 제이. 컬 | 낮은 드레쉬 홀드 전압을 갖는 에피택셜 이중 확산형 금속 산화 실리콘(dmos) 트랜지스터 구조체 형성방법 |
GB9216599D0 (en) * | 1992-08-05 | 1992-09-16 | Philips Electronics Uk Ltd | A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device |
US5316959A (en) * | 1992-08-12 | 1994-05-31 | Siliconix, Incorporated | Trenched DMOS transistor fabrication using six masks |
US5341011A (en) * | 1993-03-15 | 1994-08-23 | Siliconix Incorporated | Short channel trenched DMOS transistor |
US5410170A (en) * | 1993-04-14 | 1995-04-25 | Siliconix Incorporated | DMOS power transistors with reduced number of contacts using integrated body-source connections |
US5468982A (en) * | 1994-06-03 | 1995-11-21 | Siliconix Incorporated | Trenched DMOS transistor with channel block at cell trench corners |
US5486772A (en) * | 1994-06-30 | 1996-01-23 | Siliconix Incorporation | Reliability test method for semiconductor trench devices |
US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
-
1995
- 1995-08-21 US US08/533,814 patent/US5689128A/en not_active Expired - Lifetime
-
1996
- 1996-08-21 EP EP96928888A patent/EP0958611A1/en not_active Withdrawn
- 1996-08-21 KR KR1019980701176A patent/KR100306342B1/ko not_active IP Right Cessation
- 1996-08-21 WO PCT/US1996/013289 patent/WO1997007547A1/en not_active Application Discontinuation
- 1996-08-21 JP JP09509501A patent/JP3109837B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
JP3109837B2 (ja) | 2000-11-20 |
KR100306342B1 (ko) | 2001-11-15 |
KR19990037697A (ko) | 1999-05-25 |
US5689128A (en) | 1997-11-18 |
EP0958611A1 (en) | 1999-11-24 |
WO1997007547A1 (en) | 1997-02-27 |
EP0958611A4 (ja) | 1999-11-24 |
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