JPH11330410A5 - - Google Patents

Info

Publication number
JPH11330410A5
JPH11330410A5 JP1998128797A JP12879798A JPH11330410A5 JP H11330410 A5 JPH11330410 A5 JP H11330410A5 JP 1998128797 A JP1998128797 A JP 1998128797A JP 12879798 A JP12879798 A JP 12879798A JP H11330410 A5 JPH11330410 A5 JP H11330410A5
Authority
JP
Japan
Prior art keywords
pads
region
memory device
semiconductor memory
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998128797A
Other languages
English (en)
Japanese (ja)
Other versions
JP3996267B2 (ja
JPH11330410A (ja
Filing date
Publication date
Priority claimed from JP12879798A external-priority patent/JP3996267B2/ja
Priority to JP12879798A priority Critical patent/JP3996267B2/ja
Application filed filed Critical
Priority to TW088106238A priority patent/TW429603B/zh
Priority to KR1019990015869A priority patent/KR100830009B1/ko
Priority to US09/310,580 priority patent/US20020096694A1/en
Publication of JPH11330410A publication Critical patent/JPH11330410A/ja
Priority to US09/966,085 priority patent/US20020008255A1/en
Priority to US09/966,084 priority patent/US20020008254A1/en
Priority to US10/330,054 priority patent/US20030089926A1/en
Priority to US11/196,267 priority patent/US7400034B2/en
Publication of JPH11330410A5 publication Critical patent/JPH11330410A5/ja
Publication of JP3996267B2 publication Critical patent/JP3996267B2/ja
Application granted granted Critical
Priority to US12/146,654 priority patent/US7638871B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP12879798A 1998-05-12 1998-05-12 半導体記憶装置 Expired - Lifetime JP3996267B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP12879798A JP3996267B2 (ja) 1998-05-12 1998-05-12 半導体記憶装置
TW088106238A TW429603B (en) 1998-05-12 1999-04-19 Semiconductor apparatus
KR1019990015869A KR100830009B1 (ko) 1998-05-12 1999-05-03 반도체 장치
US09/310,580 US20020096694A1 (en) 1998-05-12 1999-05-12 Semiconductor device
US09/966,085 US20020008255A1 (en) 1998-05-12 2001-10-01 Semiconductor device
US09/966,084 US20020008254A1 (en) 1998-05-12 2001-10-01 Semiconductor device
US10/330,054 US20030089926A1 (en) 1998-05-12 2002-12-30 Semiconductor device
US11/196,267 US7400034B2 (en) 1998-05-12 2005-08-04 Semiconductor device
US12/146,654 US7638871B2 (en) 1998-05-12 2008-06-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12879798A JP3996267B2 (ja) 1998-05-12 1998-05-12 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH11330410A JPH11330410A (ja) 1999-11-30
JPH11330410A5 true JPH11330410A5 (enExample) 2005-12-22
JP3996267B2 JP3996267B2 (ja) 2007-10-24

Family

ID=14993685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12879798A Expired - Lifetime JP3996267B2 (ja) 1998-05-12 1998-05-12 半導体記憶装置

Country Status (4)

Country Link
US (6) US20020096694A1 (enExample)
JP (1) JP3996267B2 (enExample)
KR (1) KR100830009B1 (enExample)
TW (1) TW429603B (enExample)

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JP2010074018A (ja) * 2008-09-22 2010-04-02 Nec Electronics Corp 半導体装置
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JP2013021528A (ja) * 2011-07-12 2013-01-31 Elpida Memory Inc 半導体装置、及び出力バッファのインピーダンスを調整する方法
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KR102571550B1 (ko) * 2018-02-14 2023-08-28 삼성전자주식회사 메모리 장치, 메모리 시스템 및 전자 장치
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KR102601213B1 (ko) * 2018-07-03 2023-11-10 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 제조 방법
JP2021047960A (ja) * 2019-09-19 2021-03-25 キオクシア株式会社 半導体記憶装置
TWI792683B (zh) * 2021-11-17 2023-02-11 旺宏電子股份有限公司 積體電路
US11903194B2 (en) 2021-11-17 2024-02-13 Macronix International Co., Ltd. Integrated circuit

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