JPH0351101B2 - - Google Patents

Info

Publication number
JPH0351101B2
JPH0351101B2 JP19012482A JP19012482A JPH0351101B2 JP H0351101 B2 JPH0351101 B2 JP H0351101B2 JP 19012482 A JP19012482 A JP 19012482A JP 19012482 A JP19012482 A JP 19012482A JP H0351101 B2 JPH0351101 B2 JP H0351101B2
Authority
JP
Japan
Prior art keywords
sample
electrostatic chuck
chuck body
ammeter
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19012482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5979545A (ja
Inventor
Tooru Tojo
Mineo Goto
Kazuyoshi Sugihara
Mitsuo Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP19012482A priority Critical patent/JPS5979545A/ja
Publication of JPS5979545A publication Critical patent/JPS5979545A/ja
Publication of JPH0351101B2 publication Critical patent/JPH0351101B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
JP19012482A 1982-10-29 1982-10-29 静電チャック装置 Granted JPS5979545A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19012482A JPS5979545A (ja) 1982-10-29 1982-10-29 静電チャック装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19012482A JPS5979545A (ja) 1982-10-29 1982-10-29 静電チャック装置

Publications (2)

Publication Number Publication Date
JPS5979545A JPS5979545A (ja) 1984-05-08
JPH0351101B2 true JPH0351101B2 (enrdf_load_html_response) 1991-08-05

Family

ID=16252789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19012482A Granted JPS5979545A (ja) 1982-10-29 1982-10-29 静電チャック装置

Country Status (1)

Country Link
JP (1) JPS5979545A (enrdf_load_html_response)

Families Citing this family (251)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270046A (ja) * 1985-05-22 1986-11-29 Toshiba Mach Co Ltd 静電チヤツク装置
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
JPH0760849B2 (ja) * 1986-06-05 1995-06-28 東陶機器株式会社 静電チャック板
JPS63139634A (ja) * 1986-11-29 1988-06-11 Tokuda Seisakusho Ltd 静電チヤツク
JPH0691024B2 (ja) * 1987-10-09 1994-11-14 富士電機株式会社 乾式薄膜加工装置
JP2896155B2 (ja) * 1989-03-17 1999-05-31 富士通株式会社 ウェーハ用静電チャックの絶縁膜検査装置と検査方法
US5179498A (en) * 1990-05-17 1993-01-12 Tokyo Electron Limited Electrostatic chuck device
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
JP2586768B2 (ja) * 1991-10-31 1997-03-05 株式会社日立製作所 静電吸着装置
JP2804664B2 (ja) * 1992-01-21 1998-09-30 株式会社日立製作所 試料の静電吸着機構及び電子線描画装置
JP3271548B2 (ja) * 1997-04-30 2002-04-02 日新電機株式会社 静電チャック回路の断線検知方法
JP2000340640A (ja) * 1999-05-31 2000-12-08 Toto Ltd 非接触型静電吸着装置
JP2004233672A (ja) * 2003-01-30 2004-08-19 Shin-Etsu Engineering Co Ltd 基板貼り合わせ装置
DE112009001988T5 (de) * 2008-08-20 2011-07-28 ULVAC, Inc., Kanagawa Verfahren zur Bestimmung einer Anwendungsgrenze einer elektrostatischen Haltevorrichtung
JP2011077127A (ja) * 2009-09-29 2011-04-14 Tokyo Electron Ltd 搬送装置
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
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US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
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US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
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US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
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US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
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US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
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US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
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US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
JP2019125603A (ja) * 2018-01-11 2019-07-25 株式会社アルバック 吸着方法
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
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WO2019142055A2 (en) 2018-01-19 2019-07-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
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