JP7386348B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7386348B2
JP7386348B2 JP2022546089A JP2022546089A JP7386348B2 JP 7386348 B2 JP7386348 B2 JP 7386348B2 JP 2022546089 A JP2022546089 A JP 2022546089A JP 2022546089 A JP2022546089 A JP 2022546089A JP 7386348 B2 JP7386348 B2 JP 7386348B2
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Japan
Prior art keywords
gas
box
processing apparatus
plasma processing
pipe
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JP2022546089A
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English (en)
Japanese (ja)
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JPWO2022269659A5 (https=
JPWO2022269659A1 (https=
Inventor
祐介 高尾
僚一 磯村
浩平 佐藤
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2022546089A 2021-06-21 2021-06-21 プラズマ処理装置 Active JP7386348B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/023318 WO2022269659A1 (ja) 2021-06-21 2021-06-21 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JPWO2022269659A1 JPWO2022269659A1 (https=) 2022-12-29
JPWO2022269659A5 JPWO2022269659A5 (https=) 2023-05-30
JP7386348B2 true JP7386348B2 (ja) 2023-11-24

Family

ID=84544293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022546089A Active JP7386348B2 (ja) 2021-06-21 2021-06-21 プラズマ処理装置

Country Status (6)

Country Link
US (1) US12494347B2 (https=)
JP (1) JP7386348B2 (https=)
KR (1) KR102837447B1 (https=)
CN (1) CN115715424A (https=)
TW (1) TWI827101B (https=)
WO (1) WO2022269659A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025063138A1 (ja) * 2023-09-21 2025-03-27 株式会社フジキン 金属配管の固定構造

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100820A (ja) 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
WO2011158691A1 (ja) 2010-06-16 2011-12-22 日本電気株式会社 抵抗変化素子及び抵抗変化素子の製造方法

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JP3099441B2 (ja) 1991-08-08 2000-10-16 日本電気株式会社 特殊材料ガスの供給方法
JP3520614B2 (ja) * 1995-07-26 2004-04-19 株式会社デンソー ヘッドアップディスプレイ装置
JP3684624B2 (ja) 1995-08-02 2005-08-17 ソニー株式会社 反応ガス供給装置
US5958510A (en) * 1996-01-08 1999-09-28 Applied Materials, Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
JP3139369B2 (ja) * 1996-04-19 2001-02-26 日本電気株式会社 薄膜キャパシタの形成方法
US5997642A (en) * 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
JP3009371B2 (ja) * 1997-03-14 2000-02-14 ニチメン電子工研株式会社 ダイヤモンド様炭素膜堆積装置
JP3684797B2 (ja) 1997-12-04 2005-08-17 株式会社デンソー 気相成長方法および気相成長装置
JP2000150387A (ja) 1998-11-18 2000-05-30 Applied Materials Inc 配管系構造及び配管系ユニット
JP4359965B2 (ja) 1999-07-27 2009-11-11 東京エレクトロン株式会社 成膜装置
CN1322556C (zh) * 2001-02-15 2007-06-20 东京毅力科创株式会社 被处理件的处理方法及处理装置
US20030005943A1 (en) 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
US6815362B1 (en) 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US20040235303A1 (en) 2001-05-04 2004-11-25 Lam Research Corporation Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US7204913B1 (en) 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US20040014327A1 (en) 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP2007109840A (ja) * 2005-10-13 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd 水蒸気アニール装置および水蒸気アニール方法
JP4810355B2 (ja) 2006-08-24 2011-11-09 富士通セミコンダクター株式会社 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体
JP2008060171A (ja) 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
JP5042686B2 (ja) * 2007-03-30 2012-10-03 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2009084625A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
FI122941B (fi) * 2008-06-12 2012-09-14 Beneq Oy Sovitelma ALD-reaktorin yhteydessä
KR101630234B1 (ko) 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
KR20130004238A (ko) 2009-11-27 2013-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5530794B2 (ja) 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
US9533332B2 (en) 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
JP6184760B2 (ja) * 2013-06-11 2017-08-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US9885493B2 (en) * 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
JP6169666B2 (ja) 2015-10-20 2017-07-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6630649B2 (ja) 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6980406B2 (ja) * 2017-04-25 2021-12-15 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100820A (ja) 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
WO2011158691A1 (ja) 2010-06-16 2011-12-22 日本電気株式会社 抵抗変化素子及び抵抗変化素子の製造方法

Also Published As

Publication number Publication date
TW202301417A (zh) 2023-01-01
US20240194453A1 (en) 2024-06-13
CN115715424A (zh) 2023-02-24
KR20230001008A (ko) 2023-01-03
TWI827101B (zh) 2023-12-21
KR102837447B1 (ko) 2025-07-25
JPWO2022269659A1 (https=) 2022-12-29
US12494347B2 (en) 2025-12-09
WO2022269659A1 (ja) 2022-12-29

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