KR102837447B1 - 플라스마 처리 장치 - Google Patents

플라스마 처리 장치

Info

Publication number
KR102837447B1
KR102837447B1 KR1020227029789A KR20227029789A KR102837447B1 KR 102837447 B1 KR102837447 B1 KR 102837447B1 KR 1020227029789 A KR1020227029789 A KR 1020227029789A KR 20227029789 A KR20227029789 A KR 20227029789A KR 102837447 B1 KR102837447 B1 KR 102837447B1
Authority
KR
South Korea
Prior art keywords
gas
plasma
pipe
pipes
box
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227029789A
Other languages
English (en)
Korean (ko)
Other versions
KR20230001008A (ko
Inventor
유스케 다카오
료이치 이소무라
고헤이 사토
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20230001008A publication Critical patent/KR20230001008A/ko
Application granted granted Critical
Publication of KR102837447B1 publication Critical patent/KR102837447B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
KR1020227029789A 2021-06-21 2021-06-21 플라스마 처리 장치 Active KR102837447B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/023318 WO2022269659A1 (ja) 2021-06-21 2021-06-21 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20230001008A KR20230001008A (ko) 2023-01-03
KR102837447B1 true KR102837447B1 (ko) 2025-07-25

Family

ID=84544293

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227029789A Active KR102837447B1 (ko) 2021-06-21 2021-06-21 플라스마 처리 장치

Country Status (6)

Country Link
US (1) US12494347B2 (https=)
JP (1) JP7386348B2 (https=)
KR (1) KR102837447B1 (https=)
CN (1) CN115715424A (https=)
TW (1) TWI827101B (https=)
WO (1) WO2022269659A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025063138A1 (ja) * 2023-09-21 2025-03-27 株式会社フジキン 金属配管の固定構造

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100820A (ja) * 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
WO2011158691A1 (ja) * 2010-06-16 2011-12-22 日本電気株式会社 抵抗変化素子及び抵抗変化素子の製造方法

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JP3099441B2 (ja) 1991-08-08 2000-10-16 日本電気株式会社 特殊材料ガスの供給方法
JP3520614B2 (ja) * 1995-07-26 2004-04-19 株式会社デンソー ヘッドアップディスプレイ装置
JP3684624B2 (ja) 1995-08-02 2005-08-17 ソニー株式会社 反応ガス供給装置
US5958510A (en) * 1996-01-08 1999-09-28 Applied Materials, Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
JP3139369B2 (ja) * 1996-04-19 2001-02-26 日本電気株式会社 薄膜キャパシタの形成方法
US5997642A (en) * 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
JP3009371B2 (ja) * 1997-03-14 2000-02-14 ニチメン電子工研株式会社 ダイヤモンド様炭素膜堆積装置
JP3684797B2 (ja) 1997-12-04 2005-08-17 株式会社デンソー 気相成長方法および気相成長装置
JP2000150387A (ja) 1998-11-18 2000-05-30 Applied Materials Inc 配管系構造及び配管系ユニット
JP4359965B2 (ja) 1999-07-27 2009-11-11 東京エレクトロン株式会社 成膜装置
CN1322556C (zh) * 2001-02-15 2007-06-20 东京毅力科创株式会社 被处理件的处理方法及处理装置
US20030005943A1 (en) 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
US6815362B1 (en) 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US20040235303A1 (en) 2001-05-04 2004-11-25 Lam Research Corporation Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US7204913B1 (en) 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US20040014327A1 (en) 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP2007109840A (ja) * 2005-10-13 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd 水蒸気アニール装置および水蒸気アニール方法
JP4810355B2 (ja) 2006-08-24 2011-11-09 富士通セミコンダクター株式会社 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体
JP2008060171A (ja) 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
JP5042686B2 (ja) * 2007-03-30 2012-10-03 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2009084625A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
FI122941B (fi) * 2008-06-12 2012-09-14 Beneq Oy Sovitelma ALD-reaktorin yhteydessä
KR101630234B1 (ko) 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
KR20130004238A (ko) 2009-11-27 2013-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5530794B2 (ja) 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
US9533332B2 (en) 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
JP6184760B2 (ja) * 2013-06-11 2017-08-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US9885493B2 (en) * 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
JP6169666B2 (ja) 2015-10-20 2017-07-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6630649B2 (ja) 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6980406B2 (ja) * 2017-04-25 2021-12-15 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100820A (ja) * 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
WO2011158691A1 (ja) * 2010-06-16 2011-12-22 日本電気株式会社 抵抗変化素子及び抵抗変化素子の製造方法

Also Published As

Publication number Publication date
TW202301417A (zh) 2023-01-01
US20240194453A1 (en) 2024-06-13
CN115715424A (zh) 2023-02-24
KR20230001008A (ko) 2023-01-03
TWI827101B (zh) 2023-12-21
JPWO2022269659A1 (https=) 2022-12-29
US12494347B2 (en) 2025-12-09
WO2022269659A1 (ja) 2022-12-29
JP7386348B2 (ja) 2023-11-24

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