CN115715424A - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN115715424A
CN115715424A CN202180017653.9A CN202180017653A CN115715424A CN 115715424 A CN115715424 A CN 115715424A CN 202180017653 A CN202180017653 A CN 202180017653A CN 115715424 A CN115715424 A CN 115715424A
Authority
CN
China
Prior art keywords
gas
processing apparatus
pipe
plasma
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180017653.9A
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English (en)
Chinese (zh)
Inventor
高尾祐介
矶村僚一
佐藤浩平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN115715424A publication Critical patent/CN115715424A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
CN202180017653.9A 2021-06-21 2021-06-21 等离子体处理装置 Pending CN115715424A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/023318 WO2022269659A1 (ja) 2021-06-21 2021-06-21 プラズマ処理装置

Publications (1)

Publication Number Publication Date
CN115715424A true CN115715424A (zh) 2023-02-24

Family

ID=84544293

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180017653.9A Pending CN115715424A (zh) 2021-06-21 2021-06-21 等离子体处理装置

Country Status (6)

Country Link
US (1) US12494347B2 (https=)
JP (1) JP7386348B2 (https=)
KR (1) KR102837447B1 (https=)
CN (1) CN115715424A (https=)
TW (1) TWI827101B (https=)
WO (1) WO2022269659A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025063138A1 (ja) * 2023-09-21 2025-03-27 株式会社フジキン 金属配管の固定構造

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JPH0939607A (ja) * 1995-07-26 1997-02-10 Denso Corp ヘッドアップディスプレイ装置
JPH09283371A (ja) * 1996-04-19 1997-10-31 Nec Corp 薄膜キャパシタの形成方法
JP2007109840A (ja) * 2005-10-13 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd 水蒸気アニール装置および水蒸気アニール方法
JP2008251969A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマ処理装置
JP2011100820A (ja) * 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
WO2011158691A1 (ja) * 2010-06-16 2011-12-22 日本電気株式会社 抵抗変化素子及び抵抗変化素子の製造方法
CN104241087A (zh) * 2013-06-11 2014-12-24 东京毅力科创株式会社 基板处理方法和基板处理装置

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JP3099441B2 (ja) 1991-08-08 2000-10-16 日本電気株式会社 特殊材料ガスの供給方法
JP3684624B2 (ja) 1995-08-02 2005-08-17 ソニー株式会社 反応ガス供給装置
US5958510A (en) * 1996-01-08 1999-09-28 Applied Materials, Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
US5997642A (en) * 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
JP3009371B2 (ja) * 1997-03-14 2000-02-14 ニチメン電子工研株式会社 ダイヤモンド様炭素膜堆積装置
JP3684797B2 (ja) 1997-12-04 2005-08-17 株式会社デンソー 気相成長方法および気相成長装置
JP2000150387A (ja) 1998-11-18 2000-05-30 Applied Materials Inc 配管系構造及び配管系ユニット
JP4359965B2 (ja) 1999-07-27 2009-11-11 東京エレクトロン株式会社 成膜装置
CN1322556C (zh) * 2001-02-15 2007-06-20 东京毅力科创株式会社 被处理件的处理方法及处理装置
US20030005943A1 (en) 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
US6815362B1 (en) 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US20040235303A1 (en) 2001-05-04 2004-11-25 Lam Research Corporation Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US7204913B1 (en) 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US20040014327A1 (en) 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP4810355B2 (ja) 2006-08-24 2011-11-09 富士通セミコンダクター株式会社 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体
JP2008060171A (ja) 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
JP2009084625A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
FI122941B (fi) * 2008-06-12 2012-09-14 Beneq Oy Sovitelma ALD-reaktorin yhteydessä
KR101630234B1 (ko) 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
KR20130004238A (ko) 2009-11-27 2013-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5530794B2 (ja) 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
US9533332B2 (en) 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
US9885493B2 (en) * 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
JP6169666B2 (ja) 2015-10-20 2017-07-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6630649B2 (ja) 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6980406B2 (ja) * 2017-04-25 2021-12-15 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0939607A (ja) * 1995-07-26 1997-02-10 Denso Corp ヘッドアップディスプレイ装置
JPH09283371A (ja) * 1996-04-19 1997-10-31 Nec Corp 薄膜キャパシタの形成方法
JP2007109840A (ja) * 2005-10-13 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd 水蒸気アニール装置および水蒸気アニール方法
JP2008251969A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマ処理装置
JP2011100820A (ja) * 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
WO2011158691A1 (ja) * 2010-06-16 2011-12-22 日本電気株式会社 抵抗変化素子及び抵抗変化素子の製造方法
CN104241087A (zh) * 2013-06-11 2014-12-24 东京毅力科创株式会社 基板处理方法和基板处理装置

Also Published As

Publication number Publication date
TW202301417A (zh) 2023-01-01
US20240194453A1 (en) 2024-06-13
KR20230001008A (ko) 2023-01-03
TWI827101B (zh) 2023-12-21
KR102837447B1 (ko) 2025-07-25
JPWO2022269659A1 (https=) 2022-12-29
US12494347B2 (en) 2025-12-09
WO2022269659A1 (ja) 2022-12-29
JP7386348B2 (ja) 2023-11-24

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