JP4948021B2 - 触媒体化学気相成長装置 - Google Patents
触媒体化学気相成長装置 Download PDFInfo
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- JP4948021B2 JP4948021B2 JP2006110884A JP2006110884A JP4948021B2 JP 4948021 B2 JP4948021 B2 JP 4948021B2 JP 2006110884 A JP2006110884 A JP 2006110884A JP 2006110884 A JP2006110884 A JP 2006110884A JP 4948021 B2 JP4948021 B2 JP 4948021B2
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- 238000004050 hot filament vapor deposition Methods 0.000 title claims description 39
- 239000010408 film Substances 0.000 claims description 71
- 239000003054 catalyst Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 41
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 238000010926 purge Methods 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 6
- 238000000638 solvent extraction Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 101
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
4 64 基板
5 触媒体
6 32 外部電源
7 67 シャワープレート
11a 11b 電力導入部
22 排気口
23 63 筒状周壁
25 65 パージガス導入口
26 37 66 成膜領域
27 67 外側領域
35 45 中空カバー
36 46 排気管
55 パージガス導入管
Claims (6)
- 真空排気可能な処理室内に配置した基板と、該処理室内に成膜用の原料ガスを供給する原料ガス供給源と、通電により発熱し該原料ガスに触媒として作用する触媒体と、該触媒体に電力を供給する電力導入部を備え、該触媒体の作用を利用して該基板上に薄膜を形成する触媒体化学気相成長装置において、前記処理室内を少なくとも前記触媒体と前記基板が対向する成膜領域とその他の領域とに分ける仕切り手段を設け、該成膜領域の圧力がその他の領域より高くなるよう真空排気手段を設けたものであって
前記仕切り手段は前記電力導入部を収容する中空体からなり、該中空体内を排気する補助排気手段を設けたことを特徴とする触媒体化学気相成長装置。 - 真空排気可能な処理室内に配置した基板と、該処理室内に成膜用の原料ガスを供給する原料ガス供給源と、通電により発熱し該原料ガスに触媒として作用する触媒体と、該触媒体に電力を供給する電力導入部を備え、該触媒体の作用を利用して該基板上に薄膜を形成する触媒体化学気相成長装置において、前記処理室内を少なくとも前記触媒体と前記基板が対向する成膜領域とその他の領域とに分ける仕切り手段を設け、該成膜領域の圧力がその他の領域より高くなるよう真空排気手段を設けたものであって前記仕切り手段が前記成膜領域を囲繞する周壁および前記電力導入部を収容する中空体とからなり、前記原料ガス供給源からの原料ガスを前記周壁の内側に供給すると共に、前記真空排気手段で前記周壁の外側を排気し、前記中空体内を補助排気手段で真空排気するようにしたことを特徴とする触媒体化学気相成長装置。
- 前記中空体と補助排気手段とを、複数の電力導入部に対して個別に設けたことを特徴とする請求項1又は2に記載の触媒体化学気相成長装置。
- 前記周壁の外側の領域にパージガスを導入する導入手段を設けたことを特徴とする請求項3に記載の触媒体化学気相成長装置。
- 前記中空体の中にパージガスを導入する導入手段を設けたことを特徴とする請求項1又は2に記載の触媒体化学気相成長装置。
- 前記パージガスが、He、Ar、N2、H2、NH3、N2Oなどのガス、あるいはそれらの混合ガスであることを特徴とする請求項4又は5に記載の触媒体化学気相成長装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006110884A JP4948021B2 (ja) | 2006-04-13 | 2006-04-13 | 触媒体化学気相成長装置 |
DE112007000933.0T DE112007000933B4 (de) | 2006-04-13 | 2007-04-09 | Katalytische, chemische Gasphasenabscheidungsvorrichtung |
KR1020087024935A KR101183500B1 (ko) | 2006-04-13 | 2007-04-09 | 촉매체 화학 기상 성장 장치 |
CN2007800220688A CN101466867B (zh) | 2006-04-13 | 2007-04-09 | 催化体化学气相沉积装置 |
US12/296,547 US20090277386A1 (en) | 2006-04-13 | 2007-04-09 | Catalytic chemical vapor deposition apparatus |
PCT/JP2007/057804 WO2007119700A1 (ja) | 2006-04-13 | 2007-04-09 | 触媒体化学気相成長装置 |
TW096113097A TWI390075B (zh) | 2006-04-13 | 2007-04-13 | Touch chemical chemical vaporization device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006110884A JP4948021B2 (ja) | 2006-04-13 | 2006-04-13 | 触媒体化学気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007284717A JP2007284717A (ja) | 2007-11-01 |
JP4948021B2 true JP4948021B2 (ja) | 2012-06-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006110884A Expired - Fee Related JP4948021B2 (ja) | 2006-04-13 | 2006-04-13 | 触媒体化学気相成長装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090277386A1 (ja) |
JP (1) | JP4948021B2 (ja) |
KR (1) | KR101183500B1 (ja) |
CN (1) | CN101466867B (ja) |
DE (1) | DE112007000933B4 (ja) |
TW (1) | TWI390075B (ja) |
WO (1) | WO2007119700A1 (ja) |
Families Citing this family (44)
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JP4842208B2 (ja) * | 2007-05-14 | 2011-12-21 | 株式会社アルバック | Cvd装置、半導体装置、及び光電変換装置 |
CN101560650B (zh) * | 2009-05-15 | 2011-01-05 | 江苏大学 | 一种多喷淋头的化学气相沉积反应室结构 |
JP5620146B2 (ja) | 2009-05-22 | 2014-11-05 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置 |
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JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
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JP4399206B2 (ja) * | 2003-08-06 | 2010-01-13 | 株式会社アルバック | 薄膜製造装置 |
JP4374278B2 (ja) * | 2004-05-17 | 2009-12-02 | 株式会社アルバック | 触媒cvd装置 |
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KR100688837B1 (ko) * | 2005-05-12 | 2007-03-02 | 삼성에스디아이 주식회사 | 결정질 실리콘 증착을 위한 화학기상증착장치 |
KR100688838B1 (ko) * | 2005-05-13 | 2007-03-02 | 삼성에스디아이 주식회사 | 촉매 화학기상증착장치 및 촉매 화학기상증착방법 |
US20070128861A1 (en) * | 2005-12-05 | 2007-06-07 | Kim Myoung S | CVD apparatus for depositing polysilicon |
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DE112007000933B4 (de) | 2014-11-20 |
DE112007000933T5 (de) | 2009-03-12 |
TWI390075B (zh) | 2013-03-21 |
KR101183500B1 (ko) | 2012-09-20 |
JP2007284717A (ja) | 2007-11-01 |
CN101466867A (zh) | 2009-06-24 |
TW200745372A (en) | 2007-12-16 |
WO2007119700A1 (ja) | 2007-10-25 |
CN101466867B (zh) | 2011-03-23 |
US20090277386A1 (en) | 2009-11-12 |
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