CN114127333B - 前驱体源布置和原子层沉积设备 - Google Patents
前驱体源布置和原子层沉积设备 Download PDFInfo
- Publication number
- CN114127333B CN114127333B CN202080050842.1A CN202080050842A CN114127333B CN 114127333 B CN114127333 B CN 114127333B CN 202080050842 A CN202080050842 A CN 202080050842A CN 114127333 B CN114127333 B CN 114127333B
- Authority
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- China
- Prior art keywords
- precursor
- precursor source
- chamber
- heat transfer
- valve chamber
- Prior art date
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- 239000002243 precursor Substances 0.000 title claims abstract description 568
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 21
- 238000012546 transfer Methods 0.000 claims abstract description 224
- 238000000034 method Methods 0.000 claims description 15
- 238000009423 ventilation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 21
- 238000013022 venting Methods 0.000 description 12
- 239000012212 insulator Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012712 low-vapor-pressure precursor Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20195589 | 2019-06-28 | ||
FI20195589A FI130416B (en) | 2019-06-28 | 2019-06-28 | Precursor source arrangement and atomic layer growth apparatus |
PCT/FI2020/050464 WO2020260768A1 (en) | 2019-06-28 | 2020-06-26 | Precursor source arrangement and atomic layer deposition apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114127333A CN114127333A (zh) | 2022-03-01 |
CN114127333B true CN114127333B (zh) | 2024-01-12 |
Family
ID=74060473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080050842.1A Active CN114127333B (zh) | 2019-06-28 | 2020-06-26 | 前驱体源布置和原子层沉积设备 |
Country Status (4)
Country | Link |
---|---|
US (1) | US12000043B2 (zh) |
CN (1) | CN114127333B (zh) |
FI (1) | FI130416B (zh) |
WO (1) | WO2020260768A1 (zh) |
Citations (10)
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KR200446994Y1 (ko) * | 2009-07-20 | 2009-12-17 | 송종규 | 열효율을 향상시킨 밸브용 히팅장치 |
CN102016118A (zh) * | 2008-04-22 | 2011-04-13 | 皮考逊公司 | 用于淀积反应器的设备和方法 |
EP2481830A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition. |
WO2013064737A2 (en) * | 2011-11-01 | 2013-05-10 | Beneq Oy | Apparatus and method for processing substrate |
CN107881483A (zh) * | 2016-09-30 | 2018-04-06 | Asm Ip 控股有限公司 | 反应物汽化器和相关系统与方法 |
CN108677165A (zh) * | 2018-05-28 | 2018-10-19 | 滁州国凯电子科技有限公司 | 一种新型的ald设备前驱体源载气加热方法 |
CN108779555A (zh) * | 2016-03-11 | 2018-11-09 | Beneq有限公司 | 设备和方法 |
CN109415806A (zh) * | 2016-06-23 | 2019-03-01 | Beneq有限公司 | 用于处理颗粒物质的设备和方法 |
WO2020260769A1 (en) * | 2019-06-28 | 2020-12-30 | Beneq Oy | Atomic layer deposition apparatus |
CN214429738U (zh) * | 2021-03-16 | 2021-10-19 | 东莞纳锋微电子装备有限公司 | 一种反应源加热装置 |
Family Cites Families (11)
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US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US20040226513A1 (en) * | 2003-05-12 | 2004-11-18 | Applied Materials, Inc. | Chamber for uniform heating of large area substrates |
US20050221000A1 (en) | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method of forming a metal layer |
US7485338B2 (en) | 2005-03-31 | 2009-02-03 | Tokyo Electron Limited | Method for precursor delivery |
US20080063798A1 (en) | 2006-08-30 | 2008-03-13 | Kher Shreyas S | Precursors and hardware for cvd and ald |
KR101480971B1 (ko) * | 2006-10-10 | 2015-01-09 | 에이에스엠 아메리카, 인코포레이티드 | 전구체 전달 시스템 |
US9388492B2 (en) * | 2011-12-27 | 2016-07-12 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
US20130312663A1 (en) * | 2012-05-22 | 2013-11-28 | Applied Microstructures, Inc. | Vapor Delivery Apparatus |
US9970108B2 (en) | 2014-08-01 | 2018-05-15 | Lam Research Corporation | Systems and methods for vapor delivery in a substrate processing system |
US10557203B2 (en) * | 2016-12-12 | 2020-02-11 | Applied Materials, Inc. | Temperature control system and process for gaseous precursor delivery |
-
2019
- 2019-06-28 FI FI20195589A patent/FI130416B/en active
-
2020
- 2020-06-26 US US17/622,316 patent/US12000043B2/en active Active
- 2020-06-26 CN CN202080050842.1A patent/CN114127333B/zh active Active
- 2020-06-26 WO PCT/FI2020/050464 patent/WO2020260768A1/en active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102016118A (zh) * | 2008-04-22 | 2011-04-13 | 皮考逊公司 | 用于淀积反应器的设备和方法 |
KR200446994Y1 (ko) * | 2009-07-20 | 2009-12-17 | 송종규 | 열효율을 향상시킨 밸브용 히팅장치 |
EP2481830A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition. |
WO2013064737A2 (en) * | 2011-11-01 | 2013-05-10 | Beneq Oy | Apparatus and method for processing substrate |
CN108779555A (zh) * | 2016-03-11 | 2018-11-09 | Beneq有限公司 | 设备和方法 |
CN109415806A (zh) * | 2016-06-23 | 2019-03-01 | Beneq有限公司 | 用于处理颗粒物质的设备和方法 |
CN107881483A (zh) * | 2016-09-30 | 2018-04-06 | Asm Ip 控股有限公司 | 反应物汽化器和相关系统与方法 |
CN108677165A (zh) * | 2018-05-28 | 2018-10-19 | 滁州国凯电子科技有限公司 | 一种新型的ald设备前驱体源载气加热方法 |
WO2020260769A1 (en) * | 2019-06-28 | 2020-12-30 | Beneq Oy | Atomic layer deposition apparatus |
CN214429738U (zh) * | 2021-03-16 | 2021-10-19 | 东莞纳锋微电子装备有限公司 | 一种反应源加热装置 |
Also Published As
Publication number | Publication date |
---|---|
CN114127333A (zh) | 2022-03-01 |
FI20195589A1 (en) | 2020-12-29 |
FI130416B (en) | 2023-08-21 |
US20220243328A1 (en) | 2022-08-04 |
US12000043B2 (en) | 2024-06-04 |
WO2020260768A1 (en) | 2020-12-30 |
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PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: Espoo, Finland Applicant after: BENEQ Group Ltd. Address before: Espoo, Finland Applicant before: BENEQ OY |
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CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220916 Address after: Espoo, Finland Applicant after: BENEQ OY Address before: Espoo, Finland Applicant before: BENEQ Group Ltd. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230427 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Applicant after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Applicant before: BENEQ OY |
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