JP6996461B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6996461B2
JP6996461B2 JP2018169878A JP2018169878A JP6996461B2 JP 6996461 B2 JP6996461 B2 JP 6996461B2 JP 2018169878 A JP2018169878 A JP 2018169878A JP 2018169878 A JP2018169878 A JP 2018169878A JP 6996461 B2 JP6996461 B2 JP 6996461B2
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Japan
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trench
igbt
fwd
region
pitch
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JP2018169878A
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English (en)
Japanese (ja)
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JP2020043237A (ja
JP2020043237A5 (https=
Inventor
智喜 赤井
祐麻 利田
賢 妹尾
淳 大河原
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Denso Corp
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Denso Corp
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Priority to JP2018169878A priority Critical patent/JP6996461B2/ja
Priority to CN201980058845.7A priority patent/CN112673466B/zh
Priority to PCT/JP2019/033935 priority patent/WO2020054447A1/ja
Publication of JP2020043237A publication Critical patent/JP2020043237A/ja
Priority to US17/197,308 priority patent/US11476355B2/en
Publication of JP2020043237A5 publication Critical patent/JP2020043237A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2018169878A 2018-09-11 2018-09-11 半導体装置 Active JP6996461B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018169878A JP6996461B2 (ja) 2018-09-11 2018-09-11 半導体装置
CN201980058845.7A CN112673466B (zh) 2018-09-11 2019-08-29 半导体装置
PCT/JP2019/033935 WO2020054447A1 (ja) 2018-09-11 2019-08-29 半導体装置
US17/197,308 US11476355B2 (en) 2018-09-11 2021-03-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018169878A JP6996461B2 (ja) 2018-09-11 2018-09-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2020043237A JP2020043237A (ja) 2020-03-19
JP2020043237A5 JP2020043237A5 (https=) 2021-03-25
JP6996461B2 true JP6996461B2 (ja) 2022-01-17

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JP2018169878A Active JP6996461B2 (ja) 2018-09-11 2018-09-11 半導体装置

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US (1) US11476355B2 (https=)
JP (1) JP6996461B2 (https=)
CN (1) CN112673466B (https=)
WO (1) WO2020054447A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7319601B2 (ja) * 2019-11-01 2023-08-02 株式会社東芝 半導体装置
JP7459666B2 (ja) * 2020-06-04 2024-04-02 三菱電機株式会社 半導体装置
US12166111B2 (en) * 2020-06-18 2024-12-10 Dynex Semiconductor Limited Reverse conducting IGBT with controlled anode injection
JP7456902B2 (ja) * 2020-09-17 2024-03-27 株式会社東芝 半導体装置
JP7528743B2 (ja) * 2020-11-27 2024-08-06 三菱電機株式会社 半導体装置
JP7486407B2 (ja) * 2020-11-27 2024-05-17 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN115777137A (zh) * 2021-03-31 2023-03-10 丹尼克斯半导体有限公司 功率半导体器件
WO2024095578A1 (ja) * 2022-11-04 2024-05-10 株式会社デンソー 半導体装置とその製造方法
WO2025115409A1 (ja) * 2023-11-29 2025-06-05 富士電機株式会社 半導体装置
EP4583165A1 (en) * 2024-01-04 2025-07-09 Nio Technology (Anhui) Co., Ltd Reverse conducting insulated-gate bipolar transistor and method of manufacturing

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2009021557A (ja) 2007-06-14 2009-01-29 Denso Corp 半導体装置
JP2012151470A (ja) 2011-01-17 2012-08-09 Infineon Technologies Austria Ag 半導体素子および逆導通ｉｇｂｔ
JP2016197678A (ja) 2015-04-06 2016-11-24 三菱電機株式会社 半導体装置
JP2016225560A (ja) 2015-06-03 2016-12-28 トヨタ自動車株式会社 半導体装置

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JP4830360B2 (ja) * 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
JP5470826B2 (ja) * 2008-12-08 2014-04-16 株式会社デンソー 半導体装置
JP2010263149A (ja) * 2009-05-11 2010-11-18 Toyota Motor Corp 半導体装置
JP5768395B2 (ja) * 2010-07-27 2015-08-26 株式会社デンソー 半導体装置およびその制御方法
US8716746B2 (en) 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP5321669B2 (ja) * 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
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CN106463504B (zh) * 2014-11-17 2019-11-29 富士电机株式会社 半导体装置以及半导体装置的制造方法
JP6261494B2 (ja) * 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置
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WO2016114131A1 (ja) * 2015-01-16 2016-07-21 株式会社デンソー 半導体装置
JP6641983B2 (ja) * 2015-01-16 2020-02-05 株式会社デンソー 半導体装置
JP6334465B2 (ja) * 2015-06-17 2018-05-30 富士電機株式会社 半導体装置
JP6428503B2 (ja) * 2015-06-24 2018-11-28 株式会社デンソー 半導体装置
US10559663B2 (en) * 2016-10-14 2020-02-11 Fuji Electric Co., Ltd. Semiconductor device with improved current flow distribution
JP6589817B2 (ja) * 2016-10-26 2019-10-16 株式会社デンソー 半導体装置
WO2018220879A1 (ja) * 2017-05-31 2018-12-06 富士電機株式会社 半導体装置
CN110785852B (zh) * 2017-12-06 2023-10-24 富士电机株式会社 半导体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021557A (ja) 2007-06-14 2009-01-29 Denso Corp 半導体装置
JP2012151470A (ja) 2011-01-17 2012-08-09 Infineon Technologies Austria Ag 半導体素子および逆導通ｉｇｂｔ
JP2016197678A (ja) 2015-04-06 2016-11-24 三菱電機株式会社 半導体装置
JP2016225560A (ja) 2015-06-03 2016-12-28 トヨタ自動車株式会社 半導体装置

Also Published As

Publication number Publication date
US20210202725A1 (en) 2021-07-01
JP2020043237A (ja) 2020-03-19
CN112673466B (zh) 2024-02-23
US11476355B2 (en) 2022-10-18
CN112673466A (zh) 2021-04-16
WO2020054447A1 (ja) 2020-03-19

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