JP6698749B2 - 超加速熱素材を用いた発熱デバイス及びその製造方法 - Google Patents
超加速熱素材を用いた発熱デバイス及びその製造方法 Download PDFInfo
- Publication number
- JP6698749B2 JP6698749B2 JP2018109715A JP2018109715A JP6698749B2 JP 6698749 B2 JP6698749 B2 JP 6698749B2 JP 2018109715 A JP2018109715 A JP 2018109715A JP 2018109715 A JP2018109715 A JP 2018109715A JP 6698749 B2 JP6698749 B2 JP 6698749B2
- Authority
- JP
- Japan
- Prior art keywords
- super
- metal oxide
- heat material
- accelerated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/02—Materials undergoing a change of physical state when used
- C09K5/04—Materials undergoing a change of physical state when used the change of state being from liquid to vapour or vice versa
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/84—Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
- H05B3/86—Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields the heating conductors being embedded in the transparent or reflecting material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/18—Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/52—Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/16—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/84—Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/009—Heaters using conductive material in contact with opposing surfaces of the resistive element or resistive layer
- H05B2203/01—Heaters comprising a particular structure with multiple layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2214/00—Aspects relating to resistive heating, induction heating and heating using microwaves, covered by groups H05B3/00, H05B6/00
- H05B2214/02—Heaters specially designed for de-icing or protection against icing
Description
基板と、
前記基板上に形成された金属酸化物層と、
前記金属酸化物層上に形成され、格子状に配列された球状の超加速熱素材ドットと、
前記金属酸化物層及び超加速熱素材ドット上に形成された導電性接着剤層とを含み、
前記球状の超加速熱素材ドットは、下部が金属酸化物層に含まれ、上部は導電性接着剤層に含まれ得る。
第1基板上に金属酸化物層を形成する段階と、
第2基板の導電性接着剤層上に、常温化学連続工程によって球状の超加速熱素材ドットを格子配列状に形成する段階と、
前記球状の超加速熱素材ドットが形成された第2基板、および金属酸化物層が形成された第1基板をローラーに通過させ、第2基板の導電性接着剤層から第1基板の金属酸化物層に球状の超加速熱素材ドットをラミネート付着させる段階とを含んでなり、
ここで、前記球状の超加速熱素材ドットは、下部が金属酸化物層に含まれ、上部は導電性接着剤層に含まれ得る。
マイクロ波発生器から発生したマイクロ波を磁界形成空間へ案内する段階と、
前記磁界形成空間内へプラズマソースガスを流入させる段階と、
前記磁界形成空間内でプラズマソースガスをマイクロ波に露出させてプラズマ状態に維持する段階と、
前記プラズマ内の電子とイオンを磁界の影響で電子サイクロトロン共鳴(ECR;Electro Cyclotron Resonance)させて高いエネルギー密度のプラズマを維持する段階と、
高いエネルギー密度のプラズマ領域内に蒸着膜形成用超加速熱素材ソースガスを投入させて、活性化されたイオンとして提供する段階と、
前記活性化されたイオンを第2基板の表面で瞬間表面化学反応させることにより、超加速熱素材ドットを連続的に形成する段階とを含むことができる。
前記球状の超加速熱素材ドット上に保護フィルムを形成する段階と、
前記超加速熱素材ドットから保護フィルムを除去する段階とをさらに含むことができる。
実施例1
2 : 断面積
101 : 前方加熱領域
102 : 中間加熱領域
103 : 熱損失
104 : 拡散
105 : 拡散層
106 : 熱加速領域
107 : 熱貯蔵領域
108 : 超加速熱領域
201 : 基板
202 : 金属酸化物
203 : 超加速熱素材
204 : 導電性接着剤
205 : 第2基板
206 : 超加速熱素材ベースフィルム
207 : 金属複合酸化物フィルム
208 : 第1基板(金属酸化物ベースフィルム)
209 : 電極
210 : 超加速熱素材フィルム
300 : ノーマルタイプ 発熱デバイス
301 : アセンブリリングタイプ発熱デバイス
302 : 絶縁フィルム
303 : 発熱デバイス
304 : 接着フィルム
305 : レンズ
Claims (12)
- 基板と、
前記基板上に形成された金属酸化物層と、
前記金属酸化物層上に形成され、格子状に配列された球状の超加速熱素材ドットと、
前記金属酸化物層及び超加速熱素材ドット上に形成された導電性接着剤層とを含んでなり、
前記球状の超加速熱素材ドットは、下部が金属酸化物層に含まれ、上部は導電性接着剤層に含まれる、発熱デバイス。 - 前記超加速熱素材はSnF2、SnF4、スズニッケルフッ化物(SnNiF)、スズクロムフッ化物(SnCrF)、スズ亜鉛フッ化物(SnZnF)、亜鉛ニッケルフッ化物(ZnNiF)及びこれらの組み合わせよりなる群から選択される、請求項1に記載の発熱デバイス。
- 前記超加速熱素材ドットは、50〜100nmの直径を有し、10〜20nmの間隔をおいて配列される、請求項1に記載の発熱デバイス。
- 前記金属酸化物は、アルミニウム酸化物、銅酸化物、鉄酸化物、スズ酸化物、カドミウム酸化物、亜鉛酸化物及びこれらの組み合わせよりなる群から選択される、請求項1に記載の発熱デバイス。
- 前記導電性接着剤は光学的に透明な接着剤である、請求項1に記載の発熱デバイス。
- 第1基板上に金属酸化物層を形成する段階と、
第2基板の導電性接着剤層上に、常温化学連続工程によって球状の超加速熱素材ドットを格子配列状に形成する段階と、
前記球状の超加速熱素材ドットが形成された第2基板、および金属酸化物層が形成された第1基板をローラーに通過させ、第2基板の導電性接着剤層から第1基板の金属酸化物層に球状の超加速熱素材ドットをラミネート付着させる段階とを含んでなり、
前記球状の超加速熱素材ドットは、下部が金属酸化物層に含まれ、上部は導電性接着剤層に含まれる、発熱デバイスを製造する方法。 - 前記常温化学連続工程は、
マイクロ波発生器から発生したマイクロ波を磁界形成空間へ案内する段階と、
前記磁界形成空間内へプラズマソースガスを流入させる段階と、
前記磁界形成空間内でプラズマソースガスをマイクロ波に露出させてプラズマ状態に維持する段階と、
前記プラズマ内の電子とイオンを磁界の影響で電子サイクロトロン共鳴(ECR;ElectroCyclotronResonance)させて高いエネルギー密度のプラズマを維持する段階と、
高いエネルギー密度のプラズマ領域内に蒸着膜形成用超加速熱素材ソースガスを投入させて、活性化されたイオンとして提供する段階と、
前記活性化されたイオンを第2基板の表面で瞬間表面化学反応させることにより超加速熱素材ドットを連続的に形成する段階とを含んでなる、請求項6に記載の発熱デバイスを製造する方法。 - 前記超加速熱素材ドットは、50〜100nmの直径を有し、10〜20nmの間隔をおいて配列される、請求項6に記載の発熱デバイスを製造する方法。
- 前記超加速熱素材は、SnF2、SnF4、SnNiF、SnCrF、SnZnF、ZnNiFおよびこれらの組み合わせよりなる群から選択される、請求項6に記載の発熱デバイスを製造する方法。
- 前記金属酸化物は、アルミニウム酸化物、銅酸化物、鉄酸化物、スズ酸化物、カドミウム酸化物、亜鉛酸化物及びこれらの組み合わせよりなる群から選択される、請求項6に記載の発熱デバイスを製造する方法。
- 前記導電性接着剤は光学的に透明な接着剤である、請求項6に記載の発熱デバイスを製造する方法。
- 前記超加速熱素材ドットを格子配列状に形成する段階の後に、
前記球状の超加速熱素材ドット上に保護フィルムを形成する段階と、
前記超加速熱素材ドットから保護フィルムを除去する段階とをさらに含む、請求項6に記載の発熱デバイスを製造する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0042904 | 2018-04-12 | ||
KR1020180042904A KR102058865B1 (ko) | 2018-04-12 | 2018-04-12 | 초가속 열소재를 이용한 발열 디바이스 및 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019186180A JP2019186180A (ja) | 2019-10-24 |
JP6698749B2 true JP6698749B2 (ja) | 2020-05-27 |
Family
ID=62599514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018109715A Active JP6698749B2 (ja) | 2018-04-12 | 2018-06-07 | 超加速熱素材を用いた発熱デバイス及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11647568B2 (ja) |
EP (1) | EP3554191B1 (ja) |
JP (1) | JP6698749B2 (ja) |
KR (1) | KR102058865B1 (ja) |
CN (1) | CN110381617B (ja) |
DE (1) | DE102018004630A1 (ja) |
RU (1) | RU2700975C1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102293252B1 (ko) * | 2019-12-09 | 2021-08-25 | 주식회사 아이엠첨단소재 | 선박용 항해등 및 이를 위한 제어보드 |
Family Cites Families (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3710074A (en) * | 1970-10-08 | 1973-01-09 | Ppg Industries Inc | Electrically heated multiple glazed window having an iridescence masking film |
GB2061075B (en) * | 1979-10-11 | 1983-08-10 | Tdk Electronics Co Ltd | Ptc heating apparatus |
US5780313A (en) * | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
JPS61111939A (ja) * | 1984-11-02 | 1986-05-30 | Nippon Sheet Glass Co Ltd | 板ガラス |
JPS6289873A (ja) * | 1985-10-14 | 1987-04-24 | Semiconductor Energy Lab Co Ltd | 透明導電膜形成方法 |
ATE78718T1 (de) | 1987-12-17 | 1992-08-15 | Uop Inc | Dehydrierungskatalysatorteilchen mit schichtstruktur. |
US4908330A (en) * | 1988-02-01 | 1990-03-13 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process |
US4920254A (en) * | 1988-02-22 | 1990-04-24 | Sierracin Corporation | Electrically conductive window and a method for its manufacture |
US4922024A (en) * | 1988-04-14 | 1990-05-01 | The Dow Chemical Company | Amination process employing group vib metal catalysts |
US4941929A (en) * | 1989-08-24 | 1990-07-17 | E. I. Du Pont De Nemours And Company | Solder paste formulation containing stannous fluoride |
US5506037A (en) * | 1989-12-09 | 1996-04-09 | Saint Gobain Vitrage International | Heat-reflecting and/or electrically heatable laminated glass pane |
US5229205A (en) * | 1990-12-20 | 1993-07-20 | Ford Motor Company | Laminated glazing unit having improved interfacial adhesion |
US5069968A (en) * | 1990-12-20 | 1991-12-03 | Ford Motor Company | Laminated glazing unit having improved interfacial adhesion |
JPH07295409A (ja) * | 1994-04-25 | 1995-11-10 | Canon Inc | 加熱定着装置及びその製造方法 |
US5582770A (en) * | 1994-06-08 | 1996-12-10 | Raychem Corporation | Conductive polymer composition |
KR0150721B1 (ko) * | 1995-04-07 | 1998-12-15 | 이진주 | 고전기저항 투명 발열 도전막의 제조방법 및 장치 |
DE69635908T2 (de) * | 1995-08-03 | 2006-11-23 | Ngk Insulators, Ltd., Nagoya | Gesinterte Aluminiumnitridkörper und deren Verwendung als Subtrat in einer Vorrichtung zur Herstellung von Halbleitern |
JP3220635B2 (ja) * | 1996-02-09 | 2001-10-22 | 松下電器産業株式会社 | はんだ合金及びクリームはんだ |
US5935340A (en) * | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Method and apparatus for gettering fluorine from chamber material surfaces |
AU751092B2 (en) | 1997-06-18 | 2002-08-08 | Massachusetts Institute Of Technology | Controlled conversion of metal oxyfluorides into superconducting oxides |
DE19844046C2 (de) * | 1998-09-25 | 2001-08-23 | Schott Glas | Mehrscheibenisolierglas |
US6512203B2 (en) * | 1999-05-06 | 2003-01-28 | Polymore Circuit Technologies | Polymer thick film heating element on a glass substrate |
US6204480B1 (en) * | 2000-02-01 | 2001-03-20 | Southwall Technologies, Inc. | Vacuum deposition of bus bars onto conductive transparent films |
JP2001242726A (ja) * | 2000-02-25 | 2001-09-07 | Toshiba Lighting & Technology Corp | 定着ヒータおよび画像形成装置 |
US6625875B2 (en) * | 2001-03-26 | 2003-09-30 | Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) | Method of attaching bus bars to a conductive coating for a heatable vehicle window |
US20070111094A1 (en) * | 2001-08-31 | 2007-05-17 | Thackeray Michael M | Synthesis of intermetallic negative electrodes for lithium cells and batteries |
US7514654B2 (en) * | 2002-03-11 | 2009-04-07 | Nippon Sheet Glass Company, Limited | Glass article with metal member joined thereto, and junction structure using the same |
AU2003290791A1 (en) | 2002-11-14 | 2004-06-15 | Donnelly Corporation | Imaging system for vehicle |
JP4441211B2 (ja) * | 2003-08-13 | 2010-03-31 | シチズン電子株式会社 | 小型撮像モジュール |
JP2007504615A (ja) | 2003-09-05 | 2007-03-01 | キタイ,エイドリアン | 球支持薄膜蛍光体エレクトロルミネセンス素子 |
US20050067681A1 (en) * | 2003-09-26 | 2005-03-31 | Tessera, Inc. | Package having integral lens and wafer-scale fabrication method therefor |
KR101100625B1 (ko) * | 2003-10-02 | 2012-01-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선 기판 및 그 제조방법, 및 박막트랜지스터 및 그제조방법 |
JP2005281726A (ja) | 2004-03-26 | 2005-10-13 | Ntt Afty Corp | プラズマ成膜方法及びその装置 |
US7632713B2 (en) * | 2004-04-27 | 2009-12-15 | Aptina Imaging Corporation | Methods of packaging microelectronic imaging devices |
US20060042076A1 (en) | 2004-08-24 | 2006-03-02 | Fry's Metals, Inc. | Bus bar system for heatable glass |
FR2875669B1 (fr) | 2004-09-17 | 2007-07-06 | Saint Gobain | Structure chauffante electrique |
US20060154425A1 (en) * | 2005-01-10 | 2006-07-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for fabricating the same |
US20070272827A1 (en) * | 2005-04-27 | 2007-11-29 | Amkor Technology, Inc. | Image sensor package having mount holder attached to image sensor die |
WO2007000981A1 (ja) * | 2005-06-29 | 2007-01-04 | Matsushita Electric Industrial Co., Ltd. | 便座装置およびそれを備えるトイレ装置 |
KR20070096303A (ko) * | 2006-03-23 | 2007-10-02 | 엘지이노텍 주식회사 | 카메라 모듈용 인쇄회로기판 및 그 제조 방법 |
US8658309B2 (en) * | 2006-08-11 | 2014-02-25 | California Institute Of Technology | Dissociating agents, formulations and methods providing enhanced solubility of fluorides |
JP2008141037A (ja) | 2006-12-04 | 2008-06-19 | Fujifilm Corp | 固体撮像装置 |
JP5405729B2 (ja) * | 2007-03-12 | 2014-02-05 | パナソニック株式会社 | 便座装置 |
CN101286520A (zh) * | 2007-04-10 | 2008-10-15 | 鸿富锦精密工业(深圳)有限公司 | 影像感测晶片封装结构及其封装方法 |
CN101285921A (zh) * | 2007-04-13 | 2008-10-15 | 鸿富锦精密工业(深圳)有限公司 | 成像模组 |
KR100909970B1 (ko) * | 2007-11-01 | 2009-07-29 | 삼성전자주식회사 | 카메라 모듈 |
KR100959922B1 (ko) * | 2007-11-20 | 2010-05-26 | 삼성전자주식회사 | 카메라 모듈 및 그 제조방법 |
US8110884B2 (en) * | 2007-12-18 | 2012-02-07 | Micron Technology, Inc. | Methods of packaging imager devices and optics modules, and resulting assemblies |
DE202008017848U1 (de) * | 2008-04-10 | 2010-09-23 | Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg | Transparente Scheibe mit einer beheizbaren Beschichtung und niederohmigen leitenden Schichten |
JP5425459B2 (ja) * | 2008-05-19 | 2014-02-26 | 富士フイルム株式会社 | 導電性フイルム及び透明発熱体 |
KR20090129927A (ko) * | 2008-06-13 | 2009-12-17 | 주식회사 엘지화학 | 발열체 및 이의 제조방법 |
US10412788B2 (en) * | 2008-06-13 | 2019-09-10 | Lg Chem, Ltd. | Heating element and manufacturing method thereof |
JP5021842B2 (ja) * | 2008-06-13 | 2012-09-12 | エルジー・ケム・リミテッド | 発熱体およびその製造方法 |
JP5478126B2 (ja) * | 2008-06-25 | 2014-04-23 | 富士フイルム株式会社 | 導電膜形成用感光材料、導電性材料及びエレクトロルミネッセンス素子 |
US8048708B2 (en) * | 2008-06-25 | 2011-11-01 | Micron Technology, Inc. | Method and apparatus providing an imager module with a permanent carrier |
US9012073B2 (en) * | 2008-11-11 | 2015-04-21 | Envia Systems, Inc. | Composite compositions, negative electrodes with composite compositions and corresponding batteries |
TWI386970B (zh) * | 2008-11-18 | 2013-02-21 | Ind Tech Res Inst | 應用氣態硫化物之發光裝置 |
JP2010153963A (ja) | 2008-12-24 | 2010-07-08 | Nikon Corp | 冷却カメラ |
DE102009012003A1 (de) * | 2009-02-26 | 2010-09-02 | Basf Se | Schutzbeschichtung für metallische Oberflächen und ihre Herstellung |
JP5375219B2 (ja) * | 2009-03-11 | 2013-12-25 | 富士通セミコンダクター株式会社 | 撮像装置 |
TWI372558B (en) * | 2009-04-08 | 2012-09-11 | Flexible thin image-sensing module with anti-emi function and flexible thin pcb module with anti-emi function | |
EP2278851B1 (de) * | 2009-07-24 | 2013-05-29 | THERM-IC Products GmbH Nfg. & Co. KG | Elektrisch beheizbare Glasscheibe, Verfahren zu deren Herstellung sowie Fenster |
JP2011066560A (ja) | 2009-09-15 | 2011-03-31 | Sharp Corp | カメラモジュールおよび電子情報機器 |
JP2012049493A (ja) * | 2010-01-29 | 2012-03-08 | Nitto Denko Corp | 撮像部品 |
FR2956556B1 (fr) | 2010-02-17 | 2012-02-03 | Saint Gobain | Procede d'obtention d'un vitrage chauffant |
US9085051B2 (en) * | 2010-03-29 | 2015-07-21 | Gaurdian Industries Corp. | Fluorinated silver paste for forming electrical connections in highly dielectric films, and related products and methods |
JP2013527561A (ja) * | 2010-04-01 | 2013-06-27 | エルジー・ケム・リミテッド | 発熱体およびその製造方法 |
US9302451B2 (en) * | 2010-05-10 | 2016-04-05 | Saint-Gobain Glass France | Transparent panel having heatable coating and production method therefor |
KR20110127913A (ko) * | 2010-05-20 | 2011-11-28 | 삼성전자주식회사 | 카메라 모듈 |
TW201210326A (en) * | 2010-08-19 | 2012-03-01 | Hon Hai Prec Ind Co Ltd | Camera module and manufacturing method of the same |
KR101605235B1 (ko) * | 2010-09-09 | 2016-03-21 | 쌩-고벵 글래스 프랑스 | 가열가능 코팅을 갖는 투명 창유리 |
CN103098541B (zh) * | 2010-09-14 | 2015-06-17 | Lg化学株式会社 | 加热元件及其制造方法 |
US8492737B2 (en) * | 2010-11-18 | 2013-07-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Tunable infrared emitter |
WO2012096540A2 (ko) * | 2011-01-13 | 2012-07-19 | 주식회사 엘지화학 | 발열체 및 이의 제조방법 |
WO2012096541A2 (ko) * | 2011-01-13 | 2012-07-19 | 주식회사 엘지화학 | 발열체 및 이의 제조방법 |
JP5372986B2 (ja) * | 2011-03-11 | 2013-12-18 | シャープ株式会社 | カメラモジュールおよびその製造方法 |
US8605211B2 (en) * | 2011-04-28 | 2013-12-10 | Apple Inc. | Low rise camera module |
US9755229B2 (en) * | 2011-06-14 | 2017-09-05 | Brookhaven Science Associates, Llc | Intermetallic M—Sn5 (M=Fe, Cu, Co, Ni) compound and a method of synthesis thereof |
TR201910764T4 (tr) * | 2011-08-09 | 2019-08-21 | Saint Gobain | Elektrikli kontaklama bileşimleri, elektrikli kontaklama bileşimlerinin üretimine yönelik yöntem. |
JP5529820B2 (ja) * | 2011-09-22 | 2014-06-25 | 富士フイルム株式会社 | 暖房便座 |
JP5993725B2 (ja) | 2012-05-18 | 2016-09-14 | 協立化学産業株式会社 | 光学部品の製造方法、接着組成物キット及びコーティング組成物 |
JPWO2014097943A1 (ja) | 2012-12-18 | 2017-01-12 | 東レ株式会社 | 金属ドット基板および金属ドット基板の製造方法 |
KR20140105408A (ko) * | 2013-02-22 | 2014-09-01 | 주식회사 엘지화학 | 발열체 및 이의 제조방법 |
US20160041312A1 (en) | 2013-04-05 | 2016-02-11 | Mitsubishi Rayon Co., Ltd. | Optical film and surface light emitting body |
JP6415111B2 (ja) * | 2013-06-20 | 2018-10-31 | キヤノン株式会社 | プリント回路板、半導体装置の接合構造及びプリント回路板の製造方法 |
WO2015021177A1 (en) * | 2013-08-06 | 2015-02-12 | Massachusetts Institute Of Technology | Production of non-sintered transition metal carbide nanoparticles |
WO2015037182A1 (ja) | 2013-09-10 | 2015-03-19 | ロック技研工業株式会社 | 透明導電性基材及び透明導電性基材の製造方法 |
JP2015135932A (ja) | 2014-01-20 | 2015-07-27 | アイアールスペック株式会社 | ペルチェ冷却型icパッケージ |
JP5590259B1 (ja) | 2014-01-28 | 2014-09-17 | 千住金属工業株式会社 | Cu核ボール、はんだペーストおよびはんだ継手 |
JP2015182334A (ja) | 2014-03-25 | 2015-10-22 | 東レ株式会社 | 金属ドット基板およびその製造方法 |
EP2950525B1 (en) | 2014-05-28 | 2020-08-12 | ams AG | Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor |
KR101865441B1 (ko) * | 2014-09-29 | 2018-06-07 | 주식회사 엘지화학 | 발열체 및 이의 제조방법 |
WO2016080406A1 (ja) * | 2014-11-17 | 2016-05-26 | 大日本印刷株式会社 | 発熱板、導電性パターンシート、乗り物、及び、発熱板の製造方法 |
US10912155B2 (en) * | 2014-11-17 | 2021-02-02 | Dai Nippon Printing Co., Ltd. | Heating plate, conductive pattern sheet, vehicle, and method of manufacturing heating plate |
JP2018504749A (ja) * | 2014-12-31 | 2018-02-15 | コーロン インダストリーズ インク | 透明面状発熱体 |
CN104822187A (zh) | 2015-03-10 | 2015-08-05 | 宁波华尔克应用材料有限公司 | 一种挡风玻璃高效除霜雾镀膜及其制备方法和装置 |
KR102441534B1 (ko) | 2015-08-17 | 2022-09-07 | 엘지이노텍 주식회사 | 카메라 모듈 |
WO2017205658A1 (en) | 2016-05-25 | 2017-11-30 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching on microdevices and nanodevices |
KR102452409B1 (ko) | 2016-10-19 | 2022-10-11 | 삼성전자주식회사 | 방사 부재를 포함하는 전자 장치 |
US10645760B2 (en) * | 2017-05-16 | 2020-05-05 | Murata Manufacturing Co., Ltd. | Heater device and method for producing the same |
WO2019108954A1 (en) * | 2017-12-01 | 2019-06-06 | Arizona Board Of Regents On Behalf Of Arizona State University | Materials and methods relating to single molecule arrays |
-
2018
- 2018-04-12 KR KR1020180042904A patent/KR102058865B1/ko active IP Right Grant
- 2018-06-01 US US15/995,903 patent/US11647568B2/en active Active
- 2018-06-07 CN CN201810580256.2A patent/CN110381617B/zh active Active
- 2018-06-07 JP JP2018109715A patent/JP6698749B2/ja active Active
- 2018-06-11 DE DE102018004630.4A patent/DE102018004630A1/de not_active Withdrawn
- 2018-06-11 EP EP18177082.7A patent/EP3554191B1/en active Active
- 2018-06-14 RU RU2018121983A patent/RU2700975C1/ru active
Also Published As
Publication number | Publication date |
---|---|
KR20190119446A (ko) | 2019-10-22 |
CN110381617B (zh) | 2022-02-11 |
US20190320504A1 (en) | 2019-10-17 |
CN110381617A (zh) | 2019-10-25 |
EP3554191B1 (en) | 2020-08-05 |
DE102018004630A1 (de) | 2019-10-17 |
JP2019186180A (ja) | 2019-10-24 |
US11647568B2 (en) | 2023-05-09 |
KR102058865B1 (ko) | 2019-12-24 |
RU2700975C1 (ru) | 2019-09-24 |
EP3554191A1 (en) | 2019-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10237975B2 (en) | Method of making transparent conductive electrodes comprising merged metal nanowires | |
US10645760B2 (en) | Heater device and method for producing the same | |
WO2014115770A1 (ja) | 透明導電性基材ならびにその製造方法 | |
Walia et al. | Metal mesh-based transparent electrodes as high-performance EMI shields | |
JP6698749B2 (ja) | 超加速熱素材を用いた発熱デバイス及びその製造方法 | |
TWI484571B (zh) | 具有氧化物層之導電膜及其製造方法 | |
US8263905B2 (en) | Heat generation sheet and method of fabricating the same | |
Kim et al. | Extremely robust and reliable transparent silver nanowire‐mesh electrode with multifunctional optoelectronic performance through selective laser nanowelding for flexible smart devices | |
Soo et al. | Thermal stability enhancement of perovskite MAPbI3 film at high temperature (150° C) by PMMA encapsulation | |
US8168344B2 (en) | Air-cooled thermal management for a fuel cell stack | |
CN105807986A (zh) | 透明导电体和触摸屏 | |
KR101843364B1 (ko) | 발수성을 가지는 투명 전극 및 이를 포함하는 면상 발열 히터 | |
CN103154301B (zh) | 用于染料敏化太阳能电池的柔性Ti-In-Zn-O透明电极、使用它的高电导率的插入有金属的三层透明电极及其制造方法 | |
CN105700735A (zh) | 透明导电体和触摸屏 | |
JP2016110769A (ja) | 透明電極の製造方法、透明電極、透明電極の製造装置、電子機器 | |
WO2021049284A1 (ja) | インピーダンス整合膜及び電波吸収体 | |
JP7093725B2 (ja) | 有機エレクトロルミネッセンス素子 | |
JP2004001249A (ja) | 導電性シートの製造方法および導電性シート | |
Mahdy et al. | Fabrication of inverted planar perovskite solar cells using the iodine/ethanol solution method for copper iodide as a hole transport layer | |
TWI269817B (en) | Sputtering target, transparent conductive oxide, and process for producing the sputtering target | |
TW201918373A (zh) | 屏蔽薄膜及其製作方法 | |
KR20140090876A (ko) | 다층 구조의 투명 전극 | |
KR102043305B1 (ko) | 발수 발유 코팅막 및 이의 제조방법 | |
JP7156858B2 (ja) | 調光フィルム用透明導電フィルム、及び、調光フィルム | |
KR101974306B1 (ko) | 면상 발열체 구조물의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180607 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190827 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191016 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200331 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200428 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6698749 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |