TWI484571B - 具有氧化物層之導電膜及其製造方法 - Google Patents
具有氧化物層之導電膜及其製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000010410 layer Substances 0.000 claims description 213
- 239000000758 substrate Substances 0.000 claims description 59
- 239000010949 copper Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
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- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 2
- 229910052795 boron group element Inorganic materials 0.000 claims description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 2
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- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
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- 230000015572 biosynthetic process Effects 0.000 description 3
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- 230000005855 radiation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical group 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K1/00—Printed circuits
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- H—ELECTRICITY
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- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F2201/50—Protective arrangements
- G02F2201/501—Blocking layers, e.g. against migration of ions
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
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- G—PHYSICS
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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Description
本發明主張2010年11月17日申請之韓國專利申請No. 2010-0114642優先權，其所揭露者皆可全部併入本發明中。
本發明係關於一種導電膜以及其製備方法，其中該導電膜包含有一氧化物層之導電圖案。
目前的導電玻璃基板係於玻璃基板上形成一氧化銦薄膜，以作為一種導電膜。然而，玻璃導電基板存在當面積增加時表面電阻上升的問題，當該表面區域增加時，則可能會發生電壓下降的現象。為避免表面電阻的上升，可於該玻璃導電基板的表面形成一金屬導電層以克服此問題，然而，於製造過程中，當形成於一電極之該金屬導電層暴露於空氣或高溫下時，整個導電層表面會有快速氧化的現象，而當金屬導電層表面快速氧化時，該玻璃導電基板表面層會變得不均勻，且於嚴重的情況中，會誘導膨脹或裝置短路的情形因而降低其性能。
透過形成一分離之保護膜可避免表面快速氧化情形的發生，然而，其分離之保護膜的形成可能會使製程變得複雜且增加製造的成本，此外，當將分離之保護膜層疊於該導電之玻璃基板時，其可能會因為多層結構所產生的內部全反射而降低光的穿透。
本發明係關於一種具有氧化層導電圖案之導電膜以及其製備方法。
於一態樣中，一導電膜係包含一基板以及形成於基板上的第一及第二導電層，於此，氧化層係形成於第二導電層之上側表面或側面表面。
於另一態樣中，製備導電膜的方法包含在基板上形成第一及第二導電層；以及形成一圖案化之第二導電層，而該第二導電層之上側表面和側面表面係形成有氧化層。
本發明所屬技術領域之通常知識者可藉由詳述之實施例配合圖式即可了解以上及其他本發明之範疇、特徵和優點。
本發明係關於一種導電膜，其中該導電膜係包含基板以及形成於基板上之第一與第二導電層，而該導電膜具有形成於第二導電層表面上的氧化層，其中，該第二導電層可具有一圖案化之結構，該圖案化之第二導電層可為一導電圖案以降低第一導電層的表面抗性。此外，該第二導電層具有氧化層形成於其圖案之上側及側面表面之結構。
該導電膜可為一透明導電膜，以使光線穿透，故該導電膜可應用於各種顯示裝置以及照明裝置。
當金屬導電層暴露於空氣中時，則會於該金屬導電層的表面上自然形成一氧化層，然而，由於該自然形成的氧化層厚度薄且密度低，因此不足以保護該導電層。舉例來說，在製備含有金屬導電層的基板的過程中，該金屬導電層可能會經過高溫過程或暴露於改變的環境，而使導電層表面快速氧化，進而使該層的變的不均勻或發生膨脹之現象，於嚴重狀況下，該基板可能會因而發生劣化之情形。
於本發明中，係在第二導電層表面上形成一分離之氧化層以解決上述該些問題。尤其，一氧化層可透過熱或電漿處理形成於該第二導電層之表面上。形成於第二導電層表面上的氧化層可屬於一種人造氧化層，此人造氧化層相較於自然形成的氧化層，具有較厚的厚度以及較高的密度。
該基板並無特別限制，可為玻璃基板或透光塑膠膜。當基板係由透光膜形成時，其基板可為至少一選自由：聚酯類(polyesters)、醋酸類(acetates)、聚醚碸類(polyether sulfones)、聚碳酸鹽類(polycarbonates)、聚醯胺類(polyamides)、聚亞胺類(polyimides)、(甲基)丙烯酸酯類((meth)acrylates)、聚氯乙烯類(polyvinyl chlorides)、聚亞氯乙烯類(polyvinylidene chlorides)、聚苯乙烯類(polystyrenes)、聚乙烯醇類(polyvinyl alcohols)、聚丙烯酸酯類(polyacrylates)以及聚苯硫類(polyphenylene sulfides)所組成之群組。
第一導電層可為ITO或摻雜有M元素(ZnO:M)之氧化鋅系薄膜，該元素M可為13族元素或具有+3氧化數之過渡金屬。元素M可包含硼(B)、鋁(Al)、鎵(Ga)、銦(In)、鈦(Ti)、鈧(Sc)、釩(V)、鉻(Cr)、錳(Mn)、鐵(Fe)、鈷(Co)或鎳(Ni)，較佳為鋁(Al)或鎵(Ga)，但不限於此。
第二導電層可包含導電材料，如銅(Cu)、鋁(Al)、鉬(Mb)、鉻(Cr)、鎂(Mg)、鈣(Ca)、鈉(Na)、鉀(K)、鈦(Ti)、銦(In)、釔(Y)、鋰(Li)、釓(Gd)、銀(Ag)、錫(Sn)、鉛(Pb)或包含前述之二或多種的合金，但不限於此。例如，該第二導電層可為銅(Cu)。
該導電膜可包含分離之保護膜，其係形成於具有氧化層之第二導電層上，該保護層可包含至少一ITO、IZO及金屬，且當保護層係由金屬形成時，此金屬可為鹼金屬、鹼土金屬或其之混合或合金，但不限於此。此保護層可避免基板因第二導電層快速氧化而造成的劣化。
本說明書之第二導電層並無特別限制，舉例來說，該第二導電層之厚度可為1 nm至1 mm。該第二導電層可幫助具有相對高表面抗性之的第一導電層降低其表面抗性，並提升其導電度，且於上述厚度範圍中，該第二導電層可具有足夠的電導特性。此外，該第二導電層具有一圖案結構，其中該圖案之寬度為50 nm至2 μm，且該圖案間之距離介於50 μm至5 mm間，當該第二導電層圖案的寬度以及圖案與圖案間之距離在此範圍內時，當第一導電層(透明電極)的穿透度無大幅的降低時，該第二導電層可獲得更好的放射均勻度。
形成於第二導電層之氧化層可包含Cu2
O，此包含Cu2
O的氧化層並不會劣化導電膜的物理特性，且能避免因導電層的快速氧化或基板的劣化而產生的影響。形成於第二導電層之氧化層之厚度可為1至100 nm。於本發明中，形成於第二導電層表面之氧化層相較於自然氧化形成的氧化層有較厚的厚度以及更高的密度。
除此之外，本發明亦提供製造導電膜之方法，其中此導電膜係包含一基板以及形成於基板上之第一及第二導電層。於此，一氧化層係形成於第二導電層之一表面上。
於一實施例中，該方法可包含形成第一及第二導電層於一基板上；以及形成一圖案化之第二導電層，而該第二導電層之上側表面和側面表面係形成有氧化層。
該方法可依照第二導電層圖案化的順序而做部分修正，意即第二導電層圖案化可在第二導電層形成氧化層之前或之後。
該方法可包含在一基板上形成第一及第二導電層，在第二導電層上形成一氧化層，圖案化具有該氧化層之第二導電層，以及在圖案化第二導電層之一側形成一氧化層。於此情況下，在氧化層形成於第二導電層所有表面後，即可進行圖案化之步驟，而在圖案化之後，可於第二導電層之側表面上形成該氧化層。
除此之外，該方法可包含在一基板上形成第一及第二導電層，圖案化該第二導電層，以及在圖案化之第二導電層之上側以及側面表面形成氧化層。於此情況下，在圖案化第二導電層後，於圖案化第二導電層之上側及側面表面上形成氧化層。
而在基板形成第一及第二導電層之製程中，導電層可藉由熱沉積、真空沉積、濺鍍、電子束沉積、離子束沉積等方式依序堆疊，但不限於此，且習知之方法皆可使用於此。
在第二導電層上形成氧化層之製程上，較佳係藉由熱或電漿處理而達成。熱處理之溫度可為氧化層可形成於第二導電層上之溫度，例如130至200℃，較佳為140至160℃，但不限於此。於此熱處理之範圍下，可避免第二導電層的變形，且能更穩定的形成該氧化層。而電漿處理可在氧氣環境下進行，以於第二導電基板之表面上形成該氧化層。
於部分情況下，在形成氧化層後，更可於惰性氣體環境下進行一電漿或熱處理的後續製程。
根據本發明，該導電膜可應用於許多領域，且可應用於顯示器或照明裝置。例如該導電膜可應用於PDAs、筆記型電腦、監視器、OA/FA裝置、ATMs、行動電話、電子紙、導航裝置等，且亦可使用於顯示裝置，例如LCD、LED或OLED或照明裝置等。
接下來，本發明將藉由圖式而更進一步詳述，但其並不限制本發明之範疇。
圖1係本發明一實施例之層疊結構之導電膜示意圖。關於圖1，一導電膜100具有形成於一基板10上之第一及第二導電層20及30，以及形成於第二導電層30上之一氧化層40，該氧化層40可藉由熱或電漿處理方式而氧化形成於第二導電層30上。舉例來說，基板10為玻璃基板，第一導電層20為ITO層，第二導電層30可包含Cu，且係藉由熱或電漿處理方式，於該第二導電層30表面形成一人造之氧化層40。由於該氧化層40的關係，可避免第二氧化層30的快速氧化，並維持裝置的穩定性。
圖2係藉由蝕刻第二導電層而形成圖案化第二導電層之示意圖。關於圖2，於一導電膜200中，基板10上形成有一第一導電層20，且第一導電層20上形成有一圖案化第二導電層31。此第二導電層31具有氧化層41，而此氧化層41除了形成於經蝕刻而外露之第二導電層31之上側的表面上，還形成於經蝕刻而外露之第二導電層31之側面表面上。
圖3為因快速氧化而膨脹之圖案化金屬導電層影像圖。當圖案化之導電層暴露於製備導電層過程中之高溫環境下，即會因為快速氧化而發生膨脹的現象。縱然於第二導電層之上側表面形成有分離之保護層，但是於圖案化製程中該第二保護層的側表面仍會暴露出來，而於此暴露之側表面發生快速的氧化，進而使該層出現不均勻以及膨脹的現象。
除此之外，圖4係根據本發明一實施例中，具有氧化層之第二導電層之導電膜的影像圖。關於圖4，導電膜包含一圖案化之第二導電層，以及形成於第二導電層上側及側面表面之氧化層。於圖4的導電膜看來，其具有均勻的導電層，且在相同高溫過程中，不會有如圖3膨脹的現象。
本發明將藉由以下實施例更進一步詳述，然而，實施例僅供說明本發明，並不限制本發明之技術範疇。
實施例1
一TIO層以及一Cu層係依序形成於一玻璃基板上，以製備形成多層之結構。接著，圖案化Cu層，該圖案之寬度為1 μm，且圖案間之距離為100 μm。於圖案化Cu層上，透過120℃，10分鐘之熱處理方式，於圖案化Cu表面上形成一氧化層(Cu2
O)，而所製得之薄膜每層厚度如表1所示。
實施例2
一TIO層以及一Cu層係依序形成於一玻璃基板上，以製備形成多層之結構。接著，圖案化Cu層，該圖案之寬度為1 μm，且圖案間之距離為100 μm。於圖案化Cu層上，透過150℃，10分鐘之熱處理方式，於圖案化Cu表面上形成一氧化層(Cu2
O)。
實施例3
一TIO層以及一Cu層係依序形成於一玻璃基板上，以製備形成多層之結構，且將該薄膜進行150℃，10分鐘之熱處理。接著圖案化薄膜中的Cu層，使圖案之寬度為1 μm，圖案間之距離為100 μm。而此圖案化之Cu層更藉由150℃熱處理。
比較例
一TIO層以及一Cu層係依序形成於一玻璃基板上，以製備形成多層之結構，接著，圖案化薄膜中的Cu層，使圖案之寬度為1 μm，圖案間之距離為100 μm。此製備之薄膜並未進行熱處理。
實驗例1：GID分析
以掠角繞射(grazing incidence diffraction,GID)測試Cu/ITO基板(比較例)以及Cu2
O/Cu/ITO基板(實施例1)氧化層之數據，其中，Cu/ITO基板的氧化層係藉由將基板暴露於空氣中所形成，而Cu2
O/Cu/ITO基板的氧化層係以本發明處理方式所形成。測試結果如圖5所示。
關於圖5，進行熱處理(實施例1)之基板具有形成於圖案化銅導電層上之Cu2
O層，然而未處理之基板(比較例)具有非常薄且幾乎無法偵測之氧化層。
實驗例2：XRR分析
以X-光反射(X-ray reflectometry,XRR)測試分析，以計算經過熱處理之氧化層厚度。XRR圖係用來檢測Cu/ITO基板(比較例)以及Cu2
O/Cu/ITO基板(實施例2)，其中Cu/ITO基板具有藉由將基板暴露於空氣而自然形成的氧化層，而Cu2
O/Cu/ITO基板具有以本發明處理方式所形成之Cu氧化層。偵測結果如圖6所示。
關於圖6，以熱處理的基板(實施例2)具有大約10 nm厚度之Cu2
O層形成於基板表面上，而實施例2以及比較例薄膜之其他層的厚度如表1及2所示。
[表1]
如上所示，根據本發明導電膜，其圖案化導電層之上側及側面表面形成有人造之氧化層，因此可避免因導電層快速氧化而造成的基板劣化，以及增加放射均勻度。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．導電膜
10．．．基板
20．．．第一導電層
30．．．第二導電層
40．．．氧化層
200．．．導電膜
31．．．第二導電層
41．．．氧化層
圖1係本發明一實施例之層疊結構之導電膜示意圖。
圖2係本發明另一實施例之堆疊結構之導電膜示意圖。
圖3係因快速氧化而膨脹之圖案化金屬導電層影像圖。
圖4係本發明一實施例之具有圖案化金屬導電層之導電膜影像圖。
圖5係比較及分析製備導電膜GID圖案之圖表。
圖6係比較及分析製備導電膜XRR圖案之圖表。
200．．．導電膜
10．．．基板
20．．．第一導電層
31．．．第二導電層
41．．．氧化層
Claims (16)
- 一種導電膜，包含：一基板；一第一導電層，係形成於該基板上；以及一圖案化之第二導電層(M1 )，係形成於該第一導電層上，其中複數之氧化層((M2 )x Oy )係形成於該第二導電層之上側表面及側面表面上，其中，該第二導電層(M1 )係包含銅(Cu)、鋁(Al)、鉬(Mb)、鉻(Cr)、鎂(Mg)、鈣(Ca)、鈉(Na)、鉀(K)、鈦(Ti)、銦(In)、釔(Y)、鋰(Li)、釓(Gd)、銀(Ag)、錫(Sn)、鉛(Pb)或包含其之二或多種的合金，且M1 及M2 彼此相同，x為一1至3之數，y為一1至4之數。
- 如申請專利範圍第1項所述之導電膜，其中該基板包含一個或以上之樹脂，係選自由：聚酯類(polyesters)、醋酸類(acetates)、聚醚碸類(polyether sulfones)、聚碳酸鹽類(polycarbonates)、聚醯胺類(polyamides)、聚亞胺類(polyimides)、(甲基)丙烯酸酯類((meth)acrylates)、聚氯乙烯類(polyvinyl chlorides)、聚亞氯乙烯類(polyvinylidene chlorides)、聚苯乙烯類(polystyrenes)、聚乙烯醇類(polyvinyl alcohols)、聚丙烯酸酯類(polyacrylates)以及聚苯硫類(polyphenylene sulfides)所組成之群組。
- 如申請專利範圍第1項所述之導電膜，其中該第一導電層係由ITO或摻雜有M元素(ZnO：M)之一氧化鋅系薄膜，該元素M可為13族元素或具有+3氧化數之過渡金屬。
- 如申請專利範圍第1項所述之導電膜，其更包含一保護層，該保護層係形成於具有一氧化層之該第二導電層上。
- 如申請專利範圍第4項所述之導電膜，其中該保護膜係包含ITO、IZO及金屬中之至少一者。
- 如申請專利範圍第1項所述之導電膜，其中該第二導電層的厚度介於1nm至1mm。
- 如申請專利範圍第1項所述之導電膜，其中該第二導電層具有一圖案化結構，其中該圖案之寬度為50nm至2μm，而該圖案間之距離介於50μm至5mm間。
- 如申請專利範圍第1項所述之導電膜，其中形成於該第二電層之該氧化層係包含Cu2 O。
- 如申請專利範圍第1項所述之導電膜，其中形成於該第二導電層之該氧化層的厚度介於1至100nm。
- 一種製備一導電膜的方法，係包含：形成一第一導電層及一第二導電層(M1 )於一基板上；以及藉由熱或電漿處理以形成一圖案化之第二導電層(M1 )，於其上側及側面表面具有複數之氧化層((M2 )x Oy )，其中，該第二導電層(M1 )係包含銅(Cu)、鋁(Al)、鉬(Mb)、鉻(Cr)、鎂(Mg)、鈣(Ca)、鈉(Na)、鉀(K)、鈦(Ti)、 銦(In)、釔(Y)、鋰(Li)、釓(Gd)、銀(Ag)、錫(Sn)、鉛(Pb)或包含其之二或多種的合金，且M1 及M2 彼此相同，x為一1至3之數，y為一1至4之數。
- 如申請專利範圍第10項之方法，係包含：形成第一及第二導電層於一基板上；形成一氧化層於該第二導電層之一表面上；圖案化具有該氧化層之該第二導電層；以及形成一氧化層於該圖案化之第二導電層之一側面表面上。
- 如申請專利範圍第10項所述之方法，係包含：形成第一及第二導電層於一基板上；圖案化該第二導電層；形成複數之氧化層於該圖案化之第二導電層之上側及側面表面上。
- 如申請專利範圍10項所述之方法，其中係藉由熱沉積、真空沉積、濺鍍、電子束沉積、離子束沉積將該第一及第二導電層形成於該基板上。
- 如申請專利範圍的10項所述之方法，其中該熱處理係於130至200℃下進行。
- 一種顯示器，其係包含如申請專利範圍的1項所述之導電膜。
- 一種照明裝置，係包含如申請專利範圍的1項所述之導電膜。
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| US9903989B2 (en) | 2012-08-31 | 2018-02-27 | Lg Chem, Ltd. | Metal structure for decorative bezel and method for manufacturing same |
| US10455696B2 (en) * | 2013-09-06 | 2019-10-22 | Solvay Specialty Polymers Italy S.P.A. | Electrically conducting assemblies |
| US10338706B2 (en) | 2013-11-27 | 2019-07-02 | Lg Chem, Ltd. | Conductive structure body precursor, conductive structure body and method for manufacturing the same |
| WO2016018052A1 (ko) * | 2014-07-29 | 2016-02-04 | 주식회사 엘지화학 | 전도성 적층체 및 이의 제조방법 |
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| CN106910780B (zh) | 2017-05-08 | 2020-12-11 | 京东方科技集团股份有限公司 | 薄膜晶体管及制造方法、阵列基板、显示面板、显示装置 |
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| TW201009854A (en) * | 2008-07-16 | 2010-03-01 | Nitto Denko Corp | Transparent conductive film, transparent conductive laminate and touch panel, and method for fabricating transparent conductive film |
| TW201016808A (en) * | 2008-09-05 | 2010-05-01 | Lg Chemical Ltd | Paste and manufacturing method of solar cell using the same |
| TW201029245A (en) * | 2009-01-16 | 2010-08-01 | Ind Tech Res Inst | Method of forming nanoporous metal oxide thin film on flexible substrate |
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| JP3960022B2 (ja) * | 2001-11-27 | 2007-08-15 | 松下電器産業株式会社 | プラズマディスプレイパネルの製造方法 |
| EP1548868A4 (en) * | 2002-10-03 | 2009-08-12 | Fujikura Ltd | ELECTRODE SUBSTRATE, PHOTOELECTRIC CONVERSION ELEMENT, CONDUCTIVE GLASS SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF, AND PIGMENT SENSITIZATION SOLAR CELL |
| JP2005038778A (ja) * | 2003-07-17 | 2005-02-10 | Fujitsu Ltd | 放電型表示装置の製造方法 |
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| JP4866787B2 (ja) * | 2007-05-11 | 2012-02-01 | 日東電工株式会社 | 配線回路基板およびその製造方法 |
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| TW201009854A (en) * | 2008-07-16 | 2010-03-01 | Nitto Denko Corp | Transparent conductive film, transparent conductive laminate and touch panel, and method for fabricating transparent conductive film |
| TW201016808A (en) * | 2008-09-05 | 2010-05-01 | Lg Chemical Ltd | Paste and manufacturing method of solar cell using the same |
| TW201029245A (en) * | 2009-01-16 | 2010-08-01 | Ind Tech Res Inst | Method of forming nanoporous metal oxide thin film on flexible substrate |
| TW201037855A (en) * | 2009-04-03 | 2010-10-16 | Epistar Corp | A photoelectronic element having a transparent adhesion structure and the manufacturing method thereof |
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| EP2629308B1 (en) | 2019-03-06 |
| US9101059B2 (en) | 2015-08-04 |
| WO2012067444A3 (ko) | 2012-07-12 |
| WO2012067444A2 (ko) | 2012-05-24 |
| EP2629308A2 (en) | 2013-08-21 |
| JP2014503381A (ja) | 2014-02-13 |
| EP2629308A4 (en) | 2017-01-04 |
| TW201243969A (en) | 2012-11-01 |
| CN103210453B (zh) | 2016-11-02 |
| KR20120053480A (ko) | 2012-05-25 |
| US20130248227A1 (en) | 2013-09-26 |
| KR20150022964A (ko) | 2015-03-04 |
| CN103210453A (zh) | 2013-07-17 |
| JP5818383B2 (ja) | 2015-11-18 |
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