WO2012067444A3 - 산화막이 형성된 도전성 필름 및 그 제조방법 - Google Patents

산화막이 형성된 도전성 필름 및 그 제조방법 Download PDF

Info

Publication number
WO2012067444A3
WO2012067444A3 PCT/KR2011/008802 KR2011008802W WO2012067444A3 WO 2012067444 A3 WO2012067444 A3 WO 2012067444A3 KR 2011008802 W KR2011008802 W KR 2011008802W WO 2012067444 A3 WO2012067444 A3 WO 2012067444A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive layer
film
producing same
oxide film
conductive film
Prior art date
Application number
PCT/KR2011/008802
Other languages
English (en)
French (fr)
Other versions
WO2012067444A2 (ko
Inventor
김지희
김정범
이정형
박민춘
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to JP2013539763A priority Critical patent/JP5818383B2/ja
Priority to CN201180055243.XA priority patent/CN103210453B/zh
Priority to EP11841789.8A priority patent/EP2629308B1/en
Publication of WO2012067444A2 publication Critical patent/WO2012067444A2/ko
Publication of WO2012067444A3 publication Critical patent/WO2012067444A3/ko
Priority to US13/894,928 priority patent/US9101059B2/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H05K1/0298—Multilayer circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/501—Blocking layers, e.g. against migration of ions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/16—Materials and properties conductive
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

본 발명은 기재; 기재 위에 형성된 제1 도전층; 및 제1 도전층 위에 형성된 패턴화된 제2 도전층을 포함하며, 제2 도전층의 표면에는 산화막이 형성된 도전성 필름 및 그 제조방법에 관한 것으로서, 도전층의 급격한 산화로 인한 불량 내지 기재의 파손을 방지하고, 발광 균일도를 높일 수 있다.
PCT/KR2011/008802 2010-11-17 2011-11-17 산화막이 형성된 도전성 필름 및 그 제조방법 WO2012067444A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013539763A JP5818383B2 (ja) 2010-11-17 2011-11-17 酸化膜が形成された導電性フィルムを備える有機発光ダイオードディスプレイ及びその製造方法
CN201180055243.XA CN103210453B (zh) 2010-11-17 2011-11-17 形成有氧化膜的导电膜及其制造方法
EP11841789.8A EP2629308B1 (en) 2010-11-17 2011-11-17 Conductive film with an oxide film and method for producing same
US13/894,928 US9101059B2 (en) 2010-11-17 2013-05-15 Conductive film having oxide layer and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0114642 2010-11-17
KR20100114642 2010-11-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/894,928 Continuation US9101059B2 (en) 2010-11-17 2013-05-15 Conductive film having oxide layer and method of manufacturing the same

Publications (2)

Publication Number Publication Date
WO2012067444A2 WO2012067444A2 (ko) 2012-05-24
WO2012067444A3 true WO2012067444A3 (ko) 2012-07-12

Family

ID=46084532

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/008802 WO2012067444A2 (ko) 2010-11-17 2011-11-17 산화막이 형성된 도전성 필름 및 그 제조방법

Country Status (7)

Country Link
US (1) US9101059B2 (ko)
EP (1) EP2629308B1 (ko)
JP (1) JP5818383B2 (ko)
KR (2) KR20120053480A (ko)
CN (1) CN103210453B (ko)
TW (1) TWI484571B (ko)
WO (1) WO2012067444A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5984570B2 (ja) * 2012-08-09 2016-09-06 日東電工株式会社 導電性フィルム
US9903989B2 (en) 2012-08-31 2018-02-27 Lg Chem, Ltd. Metal structure for decorative bezel and method for manufacturing same
US10455696B2 (en) * 2013-09-06 2019-10-22 Solvay Specialty Polymers Italy S.P.A. Electrically conducting assemblies
US10338706B2 (en) 2013-11-27 2019-07-02 Lg Chem, Ltd. Conductive structure body precursor, conductive structure body and method for manufacturing the same
WO2016018052A1 (ko) * 2014-07-29 2016-02-04 주식회사 엘지화학 전도성 적층체 및 이의 제조방법
JP6251782B2 (ja) * 2016-08-02 2017-12-20 日東電工株式会社 導電性フィルム
CN106910780B (zh) 2017-05-08 2020-12-11 京东方科技集团股份有限公司 薄膜晶体管及制造方法、阵列基板、显示面板、显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040041657A (ko) * 2001-10-05 2004-05-17 가부시키가이샤 브리지스톤 투명 전도성 필름 및 그 제조 방법, 그리고 터치패널
KR100626128B1 (ko) * 2003-11-14 2006-09-20 닛토덴코 가부시키가이샤 투명 도전성 필름의 제조 방법
JP2008098169A (ja) * 2005-05-26 2008-04-24 Gunze Ltd 透明面状体及び透明タッチスイッチ
KR20100008758A (ko) * 2008-07-16 2010-01-26 닛토덴코 가부시키가이샤 투명 도전성 필름, 투명 도전성 적층체 및 터치 패널, 그리고 투명 도전성 필름의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270751A (en) * 1975-12-09 1977-06-13 Fujitsu Ltd Manufacture of electrode of gas discharge panel
JP3216358B2 (ja) 1993-09-07 2001-10-09 ソニー株式会社 半導体装置の配線構造及びその形成方法
JP3960022B2 (ja) * 2001-11-27 2007-08-15 松下電器産業株式会社 プラズマディスプレイパネルの製造方法
EP1548868A4 (en) * 2002-10-03 2009-08-12 Fujikura Ltd ELECTRODE SUBSTRATE, PHOTOELECTRIC CONVERSION ELEMENT, CONDUCTIVE GLASS SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF, AND PIGMENT SENSITIZATION SOLAR CELL
JP2005038778A (ja) * 2003-07-17 2005-02-10 Fujitsu Ltd 放電型表示装置の製造方法
JP5008841B2 (ja) * 2005-08-02 2012-08-22 株式会社フジクラ 電極基板の製造方法、光電変換素子および色素増感太陽電池
JP4866787B2 (ja) * 2007-05-11 2012-02-01 日東電工株式会社 配線回路基板およびその製造方法
KR20090066245A (ko) 2007-12-18 2009-06-23 한국전자통신연구원 투명전도막 및 이의 제조방법
EP2323173B1 (en) * 2008-09-05 2019-11-06 LG Chem, Ltd. Paste and manufacturing methods of a solar cell using the same
TW201029245A (en) * 2009-01-16 2010-08-01 Ind Tech Res Inst Method of forming nanoporous metal oxide thin film on flexible substrate
TWI447945B (zh) * 2009-04-03 2014-08-01 Epistar Corp 具有透明黏結結構之光電元件及其製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040041657A (ko) * 2001-10-05 2004-05-17 가부시키가이샤 브리지스톤 투명 전도성 필름 및 그 제조 방법, 그리고 터치패널
KR100626128B1 (ko) * 2003-11-14 2006-09-20 닛토덴코 가부시키가이샤 투명 도전성 필름의 제조 방법
JP2008098169A (ja) * 2005-05-26 2008-04-24 Gunze Ltd 透明面状体及び透明タッチスイッチ
KR20100008758A (ko) * 2008-07-16 2010-01-26 닛토덴코 가부시키가이샤 투명 도전성 필름, 투명 도전성 적층체 및 터치 패널, 그리고 투명 도전성 필름의 제조 방법

Also Published As

Publication number Publication date
EP2629308B1 (en) 2019-03-06
US9101059B2 (en) 2015-08-04
WO2012067444A2 (ko) 2012-05-24
EP2629308A2 (en) 2013-08-21
JP2014503381A (ja) 2014-02-13
EP2629308A4 (en) 2017-01-04
TW201243969A (en) 2012-11-01
CN103210453B (zh) 2016-11-02
KR20120053480A (ko) 2012-05-25
TWI484571B (zh) 2015-05-11
US20130248227A1 (en) 2013-09-26
KR20150022964A (ko) 2015-03-04
CN103210453A (zh) 2013-07-17
JP5818383B2 (ja) 2015-11-18

Similar Documents

Publication Publication Date Title
WO2012067444A3 (ko) 산화막이 형성된 도전성 필름 및 그 제조방법
WO2012015254A3 (ko) 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막
WO2014102222A9 (fr) Procédé microélectronique de gravure d'une couche
WO2013019021A3 (ko) 도펀트 포함 그래핀 적층체 및 그 제조방법
WO2012148228A3 (ko) 초소형 led 소자 및 그 제조방법
WO2012058377A3 (en) Methods for etching oxide layers using process gas pulsing
WO2011150089A3 (en) Ohmic contacts for semiconductor structures
WO2015028886A3 (en) Nano-gap electrode and methods for manufacturing same
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2013096031A3 (en) Highly selective spacer etch process with reduced sidewall spacer slimming
IN2015DN00551A (ko)
IN2014DN09305A (ko)
WO2013009505A3 (en) Methods of manufacturing thin film transistor devices
GB2486116A (en) Activation of graphene buffer layers on silicon carbide
WO2013002609A3 (en) Touch panel and method for manufacturing the same
WO2012160604A8 (ja) 発光素子チップ及びその製造方法
EP2518789A3 (en) Light extraction substrate for electroluminescent device and manufacturing method thereof
WO2010090489A2 (ko) 절연된 도전성 패턴의 제조 방법 및 적층체
WO2010027231A3 (ko) 리드 프레임 및 그 제조방법
WO2013106112A3 (en) Panel with core layer and method
GB2509851A (en) Organic electronic device and method of manufacture
WO2011078467A3 (ko) 산화아연 나노로드를 이용한 레이저 다이오드 및 그 제조 방법
WO2012158125A8 (en) Method of improving electrical conductivity of pedot:pss
TW201129497A (en) silicon substrate having nanostructures and method for producing the same and application thereof
WO2012033574A3 (en) Methods to adjust threshold voltage in semiconductor devices

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11841789

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2013539763

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2011841789

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE