JP6608359B2 - 基板キャリアを有さず光学素子を有するｐｃｌｅｄ - Google Patents

基板キャリアを有さず光学素子を有するｐｃｌｅｄ Download PDF

Info

Publication number
JP6608359B2
JP6608359B2 JP2016526744A JP2016526744A JP6608359B2 JP 6608359 B2 JP6608359 B2 JP 6608359B2 JP 2016526744 A JP2016526744 A JP 2016526744A JP 2016526744 A JP2016526744 A JP 2016526744A JP 6608359 B2 JP6608359 B2 JP 6608359B2
Authority
JP
Japan
Prior art keywords
light emitting
optical element
reflective layer
structures
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016526744A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016525799A (ja
JP2016525799A5 (enExample
Inventor
ベイズン，グリゴリー
シャティル ハーク，アシム
カゲヤマ，ヒデオ
ジュード モラン，ブレンダン
キロン バルドワジ，ジョーティ
Original Assignee
ルミレッズ ホールディング ベーフェー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ルミレッズ ホールディング ベーフェー filed Critical ルミレッズ ホールディング ベーフェー
Publication of JP2016525799A publication Critical patent/JP2016525799A/ja
Publication of JP2016525799A5 publication Critical patent/JP2016525799A5/ja
Application granted granted Critical
Publication of JP6608359B2 publication Critical patent/JP6608359B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2016526744A 2013-07-19 2014-07-17 基板キャリアを有さず光学素子を有するｐｃｌｅｄ Active JP6608359B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361856103P 2013-07-19 2013-07-19
US61/856,103 2013-07-19
PCT/IB2014/063169 WO2015008243A1 (en) 2013-07-19 2014-07-17 Pc led with optical element and without substrate carrier

Publications (3)

Publication Number Publication Date
JP2016525799A JP2016525799A (ja) 2016-08-25
JP2016525799A5 JP2016525799A5 (enExample) 2017-08-24
JP6608359B2 true JP6608359B2 (ja) 2019-11-20

Family

ID=51541111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016526744A Active JP6608359B2 (ja) 2013-07-19 2014-07-17 基板キャリアを有さず光学素子を有するｐｃｌｅｄ

Country Status (7)

Country Link
US (1) US20160172554A1 (enExample)
EP (1) EP3022779B1 (enExample)
JP (1) JP6608359B2 (enExample)
KR (1) KR20160032236A (enExample)
CN (1) CN105393374B (enExample)
TW (1) TWI735405B (enExample)
WO (1) WO2015008243A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014100772B4 (de) * 2014-01-23 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
DE112017007283T5 (de) * 2017-08-11 2019-12-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
WO2019042526A1 (en) * 2017-08-28 2019-03-07 Osram Opto Semiconductors Gmbh OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR FORMING OPTOELECTRONIC SEMICONDUCTOR DEVICE
CN110600458A (zh) * 2018-06-12 2019-12-20 深圳市环基实业有限公司 一种led灯及其制作方法
US11233180B2 (en) 2018-08-31 2022-01-25 Lumileds Llc Phosphor converted LED with high color quality
DE102019120717A1 (de) * 2019-07-31 2021-02-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055892A (en) * 1989-08-29 1991-10-08 Hewlett-Packard Company High efficiency lamp or light accepter
WO1998006133A2 (de) * 1996-08-07 1998-02-12 Siemens Aktiengesellschaft Verfahren zur herstellung einer infrarotemittierenden lumineszenzdiode
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JP4078760B2 (ja) * 1999-07-23 2008-04-23 株式会社村田製作所 チップ型電子部品の製造方法
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP4529319B2 (ja) * 2001-06-27 2010-08-25 日亜化学工業株式会社 半導体チップとその製造方法
TW552726B (en) * 2001-07-26 2003-09-11 Matsushita Electric Works Ltd Light emitting device in use of LED
EP1416219B1 (en) * 2001-08-09 2016-06-22 Everlight Electronics Co., Ltd Led illuminator and card type led illuminating light source
US20030057421A1 (en) * 2001-09-27 2003-03-27 Tzer-Perng Chen High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
US6734465B1 (en) * 2001-11-19 2004-05-11 Nanocrystals Technology Lp Nanocrystalline based phosphors and photonic structures for solid state lighting
US6791116B2 (en) * 2002-04-30 2004-09-14 Toyoda Gosei Co., Ltd. Light emitting diode
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
TW561636B (en) * 2002-10-11 2003-11-11 Highlink Technology Corp Optoelectronic device
TW200414572A (en) * 2002-11-07 2004-08-01 Matsushita Electric Industrial Co Ltd LED lamp
CN100352069C (zh) * 2002-11-25 2007-11-28 松下电器产业株式会社 Led照明光源
JP3716252B2 (ja) * 2002-12-26 2005-11-16 ローム株式会社 発光装置及び照明装置
US20040223315A1 (en) * 2003-03-03 2004-11-11 Toyoda Gosei Co., Ltd. Light emitting apparatus and method of making same
CN100459188C (zh) * 2003-03-18 2009-02-04 住友电气工业株式会社 发光元件安装用构件以及使用该构件的半导体装置
JP2004327587A (ja) * 2003-04-23 2004-11-18 Matsushita Electric Ind Co Ltd 電子部品製造方法および電子部品の集合体の製造方法ならびに電子部品の集合体
US20070013057A1 (en) * 2003-05-05 2007-01-18 Joseph Mazzochette Multicolor LED assembly with improved color mixing
US9142740B2 (en) * 2003-07-04 2015-09-22 Epistar Corporation Optoelectronic element and manufacturing method thereof
DE102004034166B4 (de) * 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
EP1665397A2 (en) * 2003-09-16 2006-06-07 Matsushita Electric Industrial Co., Ltd. Led lighting source and led lighting apparatus
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
KR100586944B1 (ko) * 2003-12-26 2006-06-07 삼성전기주식회사 고출력 발광다이오드 패키지 및 제조방법
WO2005067066A1 (ja) * 2004-01-07 2005-07-21 Matsushita Electric Industrial Co., Ltd. Ｌｅｄ照明光源
US8835937B2 (en) * 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
CN100391020C (zh) * 2004-02-26 2008-05-28 松下电器产业株式会社 Led光源
WO2005104247A1 (ja) * 2004-04-19 2005-11-03 Matsushita Electric Industrial Co., Ltd. Ｌｅｄ照明光源の製造方法およびｌｅｄ照明光源
JP5004410B2 (ja) * 2004-04-26 2012-08-22 Ｔｏｗａ株式会社 光素子の樹脂封止成形方法および樹脂封止成形装置
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
JP4996463B2 (ja) * 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
JP2006073950A (ja) * 2004-09-06 2006-03-16 Kansai Electric Power Co Inc:The 高耐熱半導体装置
DE102005042778A1 (de) * 2004-09-09 2006-04-13 Toyoda Gosei Co., Ltd., Nishikasugai Optische Festkörpervorrichtung
JP4747726B2 (ja) * 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
JP4667803B2 (ja) * 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
WO2006046655A1 (ja) * 2004-10-27 2006-05-04 Kyocera Corporation 発光素子搭載用基板、発光素子収納用パッケージ、発光装置および照明装置
US8816369B2 (en) * 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US9929326B2 (en) * 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7352011B2 (en) * 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7671529B2 (en) * 2004-12-10 2010-03-02 Philips Lumileds Lighting Company, Llc Phosphor converted light emitting device
CN101128516B (zh) * 2005-02-23 2012-03-21 三菱化学株式会社 半导体发光器件用部件及其制造方法以及使用了该部件的半导体发光器件
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
DE102005055293A1 (de) * 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
US7847302B2 (en) * 2005-08-26 2010-12-07 Koninklijke Philips Electronics, N.V. Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
WO2007034919A1 (ja) * 2005-09-22 2007-03-29 Mitsubishi Chemical Corporation 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス
DE102005047168A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2007123362A (ja) * 2005-10-25 2007-05-17 Disco Abrasive Syst Ltd デバイスの製造方法
EP1780798A1 (en) * 2005-10-27 2007-05-02 Barco, naamloze vennootschap. Integrated led devices with increased pixel fill factor for achieving improved image quality of led display panels
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP2007273941A (ja) * 2006-03-07 2007-10-18 Sanyo Semiconductor Co Ltd 半導体装置の製造方法
US7521728B2 (en) * 2006-01-20 2009-04-21 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
US20070228386A1 (en) * 2006-03-30 2007-10-04 Jin-Shown Shie Wire-bonding free packaging structure of light emitted diode
US8969908B2 (en) * 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
US9443903B2 (en) * 2006-06-30 2016-09-13 Cree, Inc. Low temperature high strength metal stack for die attachment
US8502364B2 (en) * 2006-08-22 2013-08-06 Mitsubishi Chemical Corporation Semiconductor device member, production method of semiconductor-device-member formation liquid and semiconductor device member, and semiconductor-device-member formation liquid, phosphor composition, semiconductor light-emitting device, lighting system and image display system using the same
JP4984824B2 (ja) * 2006-10-26 2012-07-25 豊田合成株式会社 発光装置
US20080099774A1 (en) * 2006-10-27 2008-05-01 Tan Michael R T Method for high-volume production of light emitting diodes with attached lenses
CN105826345B (zh) * 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
KR100802393B1 (ko) * 2007-02-15 2008-02-13 삼성전기주식회사 패키지 기판 및 그 제조방법
CN101855735A (zh) * 2007-11-19 2010-10-06 松下电器产业株式会社 半导体发光装置及半导体发光装置的制造方法
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8940561B2 (en) * 2008-01-15 2015-01-27 Cree, Inc. Systems and methods for application of optical materials to optical elements
US8058088B2 (en) * 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
DE102008010512A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
US8916890B2 (en) * 2008-03-19 2014-12-23 Cree, Inc. Light emitting diodes with light filters
US8629222B2 (en) * 2008-03-28 2014-01-14 Mitsubishi Chemical Corporation Curable polysiloxane composition, and polysiloxane cured product, optical member, member for aerospace industry, semiconductor light-emitting device, illuminating device and image display device using the same
KR100982990B1 (ko) * 2008-09-03 2010-09-17 삼성엘이디 주식회사 파장변환플레이트 및 이를 이용한 발광장치
DE102008053489A1 (de) * 2008-10-28 2010-04-29 Osram Opto Semiconductors Gmbh Trägerkörper für ein Halbleiterbauelement, Halbleiterbauelement und Verfahren zur Herstellung eines Trägerkörpers
KR101521260B1 (ko) * 2008-11-25 2015-05-18 삼성전자주식회사 발광 다이오드 패키지 및 이의 제조방법
JP5294902B2 (ja) * 2009-01-27 2013-09-18 シチズン電子株式会社 表面実装型発光素子の製造方法
EP2228841A1 (en) * 2009-03-09 2010-09-15 Ledon Lighting Jennersdorf GmbH LED module with improved light output
US8168998B2 (en) * 2009-06-09 2012-05-01 Koninklijke Philips Electronics N.V. LED with remote phosphor layer and reflective submount
US8110839B2 (en) * 2009-07-13 2012-02-07 Luxingtek, Ltd. Lighting device, display, and method for manufacturing the same
US20110062469A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Molded lens incorporating a window element
US9385285B2 (en) * 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
JP5534763B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
CN102044600A (zh) * 2009-10-15 2011-05-04 展晶科技(深圳)有限公司 发光二极管封装结构及其制备方法
US8269245B1 (en) * 2009-10-30 2012-09-18 Soraa, Inc. Optical device with wavelength selective reflector
JP5349260B2 (ja) * 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
DE112011100376B4 (de) * 2010-01-29 2024-06-27 Citizen Electronics Co., Ltd. Verfahren zur herstellung einer licht aussendenden vorrichtung
RU2525325C2 (ru) * 2010-02-09 2014-08-10 Нития Корпорейшн Светоизлучающее устройство и способ изготовления светоизлучающего устройства
US8771577B2 (en) * 2010-02-16 2014-07-08 Koninklijke Philips N.V. Light emitting device with molded wavelength converting layer
CN102194985B (zh) * 2010-03-04 2013-11-06 展晶科技(深圳)有限公司 晶圆级封装之方法
JP2011204838A (ja) * 2010-03-25 2011-10-13 Citizen Holdings Co Ltd 半導体発光装置の製造方法
US8319247B2 (en) * 2010-03-25 2012-11-27 Koninklijke Philips Electronics N.V. Carrier for a light emitting device
KR101342287B1 (ko) * 2010-04-28 2013-12-16 미쓰비시 가가꾸 가부시키가이샤 반도체 발광 장치용 패키지 및 발광 장치
JP5390472B2 (ja) * 2010-06-03 2014-01-15 株式会社東芝 半導体発光装置及びその製造方法
JP5337106B2 (ja) * 2010-06-04 2013-11-06 株式会社東芝 半導体発光装置
JP4875185B2 (ja) * 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
JP5426484B2 (ja) * 2010-06-07 2014-02-26 株式会社東芝 半導体発光装置の製造方法
JP2012039013A (ja) * 2010-08-10 2012-02-23 Citizen Electronics Co Ltd 発光装置の製造方法
JP5622494B2 (ja) * 2010-09-09 2014-11-12 スタンレー電気株式会社 発光装置およびその製造方法
KR101711961B1 (ko) * 2010-09-10 2017-03-03 삼성전자주식회사 발광 디바이스
DE102010045403A1 (de) * 2010-09-15 2012-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US9478719B2 (en) * 2010-11-08 2016-10-25 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
KR20120062302A (ko) * 2010-12-06 2012-06-14 삼성엘이디 주식회사 발광소자 패키지 및 그 제조방법
US9391247B2 (en) * 2010-12-16 2016-07-12 Cree, Inc. High power LEDs with non-polymer material lenses and methods of making the same
KR101766299B1 (ko) * 2011-01-20 2017-08-08 삼성전자 주식회사 발광소자 패키지 및 그 제조 방법
JP5582048B2 (ja) * 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
US9166126B2 (en) * 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
JP2012164902A (ja) * 2011-02-09 2012-08-30 Citizen Holdings Co Ltd 半導体発光装置の製造方法
KR101812168B1 (ko) * 2011-04-19 2017-12-26 엘지전자 주식회사 발광 소자 패키지 및 이를 이용한 발광 장치
JP5611122B2 (ja) * 2011-05-27 2014-10-22 シチズンホールディングス株式会社 半導体発光素子の製造方法
US8525190B2 (en) * 2011-06-15 2013-09-03 Cree, Inc. Conformal gel layers for light emitting diodes
US9653643B2 (en) * 2012-04-09 2017-05-16 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
US9666764B2 (en) * 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
US9117941B2 (en) * 2011-09-02 2015-08-25 King Dragon International Inc. LED package and method of the same
JP2013098202A (ja) * 2011-10-28 2013-05-20 Citizen Holdings Co Ltd 半導体発光装置及びそれを備えた電子機器並びにその製造方法
US9444024B2 (en) * 2011-11-10 2016-09-13 Cree, Inc. Methods of forming optical conversion material caps
US9293641B2 (en) * 2011-11-18 2016-03-22 Invensas Corporation Inverted optical device
US9335531B2 (en) * 2011-12-30 2016-05-10 Cree, Inc. LED lighting using spectral notching
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
WO2013112435A1 (en) * 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
US8907362B2 (en) * 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN104094424B (zh) * 2012-02-10 2016-12-21 皇家飞利浦有限公司 形成芯片级led封装的模制透镜及其制造方法
JP2014053506A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体発光装置及び発光モジュール
US9490398B2 (en) * 2012-12-10 2016-11-08 Citizen Holdings Co., Ltd. Manufacturing method of light emitting device in a flip-chip configuration with reduced package size
US8754435B1 (en) * 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
KR101504331B1 (ko) * 2013-03-04 2015-03-19 삼성전자주식회사 발광소자 패키지
JP2017503352A (ja) * 2014-01-06 2017-01-26 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． カメラのための薄いｌｅｄフラッシュ
JP2015176960A (ja) * 2014-03-14 2015-10-05 株式会社東芝 発光装置

Also Published As

Publication number Publication date
JP2016525799A (ja) 2016-08-25
CN105393374B (zh) 2019-05-28
TWI735405B (zh) 2021-08-11
KR20160032236A (ko) 2016-03-23
US20160172554A1 (en) 2016-06-16
CN105393374A (zh) 2016-03-09
EP3022779A1 (en) 2016-05-25
EP3022779B1 (en) 2020-03-18
WO2015008243A1 (en) 2015-01-22
TW201505214A (zh) 2015-02-01

Similar Documents

Publication Publication Date Title
JP6203759B2 (ja) Ｌｅｄチップの製造方法
CN101681964B (zh) 用于制造光电子器件的方法以及光电子器件
JP6608359B2 (ja) 基板キャリアを有さず光学素子を有するｐｃｌｅｄ
CN104737307B (zh) 用于制造多个光电子半导体构件的方法
CN105706237B (zh) 用于倒装芯片led的基于框架的封装
US20130161670A1 (en) Light emitting diode packages and methods of making
US10134957B2 (en) Surface-mountable optoelectronic semiconductor component with conductive connection on housing body
KR20160106152A (ko) 인광체 변환기를 갖는 비접착식 발광 디바이스
KR20150022868A (ko) 광전자 모듈, 그리고 광전자 모듈의 제어 방법
KR102185099B1 (ko) 돔을 가진 칩 규모 발광 디바이스 패키지
KR101426434B1 (ko) 반도체 발광소자를 제조하는 방법
US9324697B1 (en) Chip-on-heatsink light emitting diode package and fabrication method
WO2014184698A1 (en) Chip scale light emitting device package in molded leadframe
JP4987632B2 (ja) 半導体素子の製造方法、サブマウントの製造方法及び電子部品
KR101461153B1 (ko) 반도체 소자 구조물을 제조하는 방법
KR101461156B1 (ko) 반도체 발광소자 및 이를 제조하는 방법
KR20140026154A (ko) 반도체 소자 구조물을 제조하는 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170714

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170714

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180529

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180530

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180801

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180904

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20181128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190301

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20190307

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190820

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20190827

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190924

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191023

R150 Certificate of patent or registration of utility model

Ref document number: 6608359

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250