TWI735405B - 發光裝置及其形成方法 - Google Patents
發光裝置及其形成方法 Download PDFInfo
- Publication number
- TWI735405B TWI735405B TW103124829A TW103124829A TWI735405B TW I735405 B TWI735405 B TW I735405B TW 103124829 A TW103124829 A TW 103124829A TW 103124829 A TW103124829 A TW 103124829A TW I735405 B TWI735405 B TW I735405B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- emitting
- substrate
- optical
- carrier substrate
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361856103P | 2013-07-19 | 2013-07-19 | |
| US61/856,103 | 2013-07-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201505214A TW201505214A (zh) | 2015-02-01 |
| TWI735405B true TWI735405B (zh) | 2021-08-11 |
Family
ID=51541111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103124829A TWI735405B (zh) | 2013-07-19 | 2014-07-18 | 發光裝置及其形成方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20160172554A1 (enExample) |
| EP (1) | EP3022779B1 (enExample) |
| JP (1) | JP6608359B2 (enExample) |
| KR (1) | KR20160032236A (enExample) |
| CN (1) | CN105393374B (enExample) |
| TW (1) | TWI735405B (enExample) |
| WO (1) | WO2015008243A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014100772B4 (de) * | 2014-01-23 | 2022-11-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
| DE112017007283T5 (de) * | 2017-08-11 | 2019-12-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
| US11437557B2 (en) | 2017-08-28 | 2022-09-06 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device and method for forming an optoelectronic semiconductor device |
| CN110600458A (zh) * | 2018-06-12 | 2019-12-20 | 深圳市环基实业有限公司 | 一种led灯及其制作方法 |
| US11233180B2 (en) | 2018-08-31 | 2022-01-25 | Lumileds Llc | Phosphor converted LED with high color quality |
| DE102019120717A1 (de) * | 2019-07-31 | 2021-02-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070241357A1 (en) * | 2004-10-29 | 2007-10-18 | Ledengin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
| US7514867B2 (en) * | 2004-04-19 | 2009-04-07 | Panasonic Corporation | LED lamp provided with optical diffusion layer having increased thickness and method of manufacturing thereof |
| US20090179207A1 (en) * | 2008-01-11 | 2009-07-16 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| JP2010177225A (ja) * | 2009-01-27 | 2010-08-12 | Citizen Electronics Co Ltd | 表面実装型発光素子の製造方法 |
| JP2012248672A (ja) * | 2011-05-27 | 2012-12-13 | Citizen Holdings Co Ltd | 半導体発光素子の製造方法 |
Family Cites Families (127)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055892A (en) * | 1989-08-29 | 1991-10-08 | Hewlett-Packard Company | High efficiency lamp or light accepter |
| EP0917741B1 (de) * | 1996-08-07 | 2001-10-31 | Osram Opto Semiconductors GmbH & Co. OHG | Verfahren zur herstellung einer infrarotemittierenden lumineszenzdiode |
| US5847507A (en) * | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
| JP4078760B2 (ja) * | 1999-07-23 | 2008-04-23 | 株式会社村田製作所 | チップ型電子部品の製造方法 |
| US6650044B1 (en) * | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| JP4529319B2 (ja) * | 2001-06-27 | 2010-08-25 | 日亜化学工業株式会社 | 半導体チップとその製造方法 |
| TW552726B (en) * | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
| EP1416219B1 (en) * | 2001-08-09 | 2016-06-22 | Everlight Electronics Co., Ltd | Led illuminator and card type led illuminating light source |
| US20030057421A1 (en) * | 2001-09-27 | 2003-03-27 | Tzer-Perng Chen | High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate |
| US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
| US6734465B1 (en) * | 2001-11-19 | 2004-05-11 | Nanocrystals Technology Lp | Nanocrystalline based phosphors and photonic structures for solid state lighting |
| US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
| US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
| TW561636B (en) * | 2002-10-11 | 2003-11-11 | Highlink Technology Corp | Optoelectronic device |
| TW200414572A (en) * | 2002-11-07 | 2004-08-01 | Matsushita Electric Industrial Co Ltd | LED lamp |
| CN100352069C (zh) * | 2002-11-25 | 2007-11-28 | 松下电器产业株式会社 | Led照明光源 |
| JP3716252B2 (ja) * | 2002-12-26 | 2005-11-16 | ローム株式会社 | 発光装置及び照明装置 |
| EP1455398A3 (en) * | 2003-03-03 | 2011-05-25 | Toyoda Gosei Co., Ltd. | Light emitting device comprising a phosphor layer and method of making same |
| EP1605524B1 (en) * | 2003-03-18 | 2010-06-30 | Sumitomo Electric Industries, Ltd. | Light emitting element mounting member, and semiconductor device using the same |
| JP2004327587A (ja) * | 2003-04-23 | 2004-11-18 | Matsushita Electric Ind Co Ltd | 電子部品製造方法および電子部品の集合体の製造方法ならびに電子部品の集合体 |
| US20070013057A1 (en) * | 2003-05-05 | 2007-01-18 | Joseph Mazzochette | Multicolor LED assembly with improved color mixing |
| US9142740B2 (en) * | 2003-07-04 | 2015-09-22 | Epistar Corporation | Optoelectronic element and manufacturing method thereof |
| DE102004034166B4 (de) * | 2003-07-17 | 2015-08-20 | Toyoda Gosei Co., Ltd. | Lichtemittierende Vorrichtung |
| US7009213B2 (en) * | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
| US20070023769A1 (en) * | 2003-09-16 | 2007-02-01 | Keiji Nishimoto | Led lighting source and led lighting apparatus |
| KR100714639B1 (ko) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
| KR100586944B1 (ko) * | 2003-12-26 | 2006-06-07 | 삼성전기주식회사 | 고출력 발광다이오드 패키지 및 제조방법 |
| JP3897806B2 (ja) * | 2004-01-07 | 2007-03-28 | 松下電器産業株式会社 | Led照明光源 |
| KR101332771B1 (ko) * | 2004-02-20 | 2013-11-25 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법 |
| WO2005083805A1 (ja) * | 2004-02-26 | 2005-09-09 | Matsushita Electric Industrial Co., Ltd. | Led光源 |
| JP5004410B2 (ja) * | 2004-04-26 | 2012-08-22 | Towa株式会社 | 光素子の樹脂封止成形方法および樹脂封止成形装置 |
| US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
| US7553683B2 (en) * | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
| CN101032034A (zh) * | 2004-06-30 | 2007-09-05 | 克里公司 | 用于封装发光器件的芯片级方法和芯片级封装的发光器件 |
| JP2006073950A (ja) * | 2004-09-06 | 2006-03-16 | Kansai Electric Power Co Inc:The | 高耐熱半導体装置 |
| JP4747726B2 (ja) * | 2004-09-09 | 2011-08-17 | 豊田合成株式会社 | 発光装置 |
| US7470926B2 (en) * | 2004-09-09 | 2008-12-30 | Toyoda Gosei Co., Ltd | Solid-state optical device |
| JP4667803B2 (ja) * | 2004-09-14 | 2011-04-13 | 日亜化学工業株式会社 | 発光装置 |
| DE102004047640A1 (de) * | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement |
| WO2006046655A1 (ja) * | 2004-10-27 | 2006-05-04 | Kyocera Corporation | 発光素子搭載用基板、発光素子収納用パッケージ、発光装置および照明装置 |
| US9929326B2 (en) * | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
| US7419839B2 (en) * | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
| US7352011B2 (en) * | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
| US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
| US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
| US7671529B2 (en) * | 2004-12-10 | 2010-03-02 | Philips Lumileds Lighting Company, Llc | Phosphor converted light emitting device |
| US7859006B2 (en) * | 2005-02-23 | 2010-12-28 | Mitsubishi Chemical Corporation | Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member |
| US7646035B2 (en) * | 2006-05-31 | 2010-01-12 | Cree, Inc. | Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices |
| DE102005055293A1 (de) * | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
| US7847302B2 (en) * | 2005-08-26 | 2010-12-07 | Koninklijke Philips Electronics, N.V. | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
| WO2007034919A1 (ja) * | 2005-09-22 | 2007-03-29 | Mitsubishi Chemical Corporation | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
| DE102005047168A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102005061346A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| JP2007123362A (ja) * | 2005-10-25 | 2007-05-17 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
| EP1780798A1 (en) * | 2005-10-27 | 2007-05-02 | Barco, naamloze vennootschap. | Integrated led devices with increased pixel fill factor for achieving improved image quality of led display panels |
| US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
| JP2007273941A (ja) * | 2006-03-07 | 2007-10-18 | Sanyo Semiconductor Co Ltd | 半導体装置の製造方法 |
| US7521728B2 (en) * | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
| US20070228386A1 (en) * | 2006-03-30 | 2007-10-04 | Jin-Shown Shie | Wire-bonding free packaging structure of light emitted diode |
| US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
| US9443903B2 (en) * | 2006-06-30 | 2016-09-13 | Cree, Inc. | Low temperature high strength metal stack for die attachment |
| TWI404791B (zh) * | 2006-08-22 | 2013-08-11 | 三菱化學股份有限公司 | A semiconductor light emitting device, a lighting device, and an image display device |
| JP4984824B2 (ja) * | 2006-10-26 | 2012-07-25 | 豊田合成株式会社 | 発光装置 |
| US20080099774A1 (en) * | 2006-10-27 | 2008-05-01 | Tan Michael R T | Method for high-volume production of light emitting diodes with attached lenses |
| EP2104954B1 (en) * | 2007-01-17 | 2022-03-16 | The Board of Trustees of the University of Illinois | Optical systems fabricated by printing-based assembly |
| KR100802393B1 (ko) * | 2007-02-15 | 2008-02-13 | 삼성전기주식회사 | 패키지 기판 및 그 제조방법 |
| EP2221885A4 (en) * | 2007-11-19 | 2013-09-25 | Panasonic Corp | SEMICONDUCTOR LIGHTING ELEMENT AND METHOD FOR PRODUCING A SEMICONDUCTOR LIGHTING ELEMENT |
| US8940561B2 (en) * | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
| US8058088B2 (en) * | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
| DE102008010512A1 (de) * | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils |
| US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
| EP2270100A4 (en) * | 2008-03-28 | 2012-07-25 | Mitsubishi Chem Corp | HARDENABLE POLYSILOXANE COMPOSITION AND CURED POLYSILOXANE PRODUCT, OPTICAL ELEMENT, ELEMENT FOR AIR AND SPACE INDUSTRY, LIGHT EMITTING SEMICONDUCTOR DEVICE, LIGHTING SYSTEM AND IMAGING APPARATUS USING HARDENABLE POLYSILOXANE COMPOSITION |
| KR100982990B1 (ko) * | 2008-09-03 | 2010-09-17 | 삼성엘이디 주식회사 | 파장변환플레이트 및 이를 이용한 발광장치 |
| DE102008053489A1 (de) * | 2008-10-28 | 2010-04-29 | Osram Opto Semiconductors Gmbh | Trägerkörper für ein Halbleiterbauelement, Halbleiterbauelement und Verfahren zur Herstellung eines Trägerkörpers |
| KR101521260B1 (ko) * | 2008-11-25 | 2015-05-18 | 삼성전자주식회사 | 발광 다이오드 패키지 및 이의 제조방법 |
| DE202009018419U1 (de) * | 2009-03-09 | 2011-08-17 | Tridonic Jennersdorf Gmbh | LED-Modul mit verbesserter Lichtleistung |
| US8168998B2 (en) * | 2009-06-09 | 2012-05-01 | Koninklijke Philips Electronics N.V. | LED with remote phosphor layer and reflective submount |
| US8110839B2 (en) * | 2009-07-13 | 2012-02-07 | Luxingtek, Ltd. | Lighting device, display, and method for manufacturing the same |
| US9385285B2 (en) * | 2009-09-17 | 2016-07-05 | Koninklijke Philips N.V. | LED module with high index lens |
| US20110062469A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
| JP5534763B2 (ja) * | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
| CN102044600A (zh) * | 2009-10-15 | 2011-05-04 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制备方法 |
| US8269245B1 (en) * | 2009-10-30 | 2012-09-18 | Soraa, Inc. | Optical device with wavelength selective reflector |
| JP5349260B2 (ja) * | 2009-11-19 | 2013-11-20 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| US8556672B2 (en) * | 2010-01-29 | 2013-10-15 | Citizen Electronics Co., Ltd. | Method of producing light-emitting device and light-emitting device |
| JP5996871B2 (ja) * | 2010-02-09 | 2016-09-21 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
| US8771577B2 (en) * | 2010-02-16 | 2014-07-08 | Koninklijke Philips N.V. | Light emitting device with molded wavelength converting layer |
| CN102194985B (zh) * | 2010-03-04 | 2013-11-06 | 展晶科技(深圳)有限公司 | 晶圆级封装之方法 |
| JP2011204838A (ja) * | 2010-03-25 | 2011-10-13 | Citizen Holdings Co Ltd | 半導体発光装置の製造方法 |
| US8319247B2 (en) * | 2010-03-25 | 2012-11-27 | Koninklijke Philips Electronics N.V. | Carrier for a light emitting device |
| JPWO2011136302A1 (ja) * | 2010-04-28 | 2013-07-22 | 三菱化学株式会社 | 半導体発光装置用パッケージ及び発光装置 |
| JP5390472B2 (ja) * | 2010-06-03 | 2014-01-15 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| JP5337106B2 (ja) * | 2010-06-04 | 2013-11-06 | 株式会社東芝 | 半導体発光装置 |
| JP5426484B2 (ja) * | 2010-06-07 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法 |
| JP4875185B2 (ja) * | 2010-06-07 | 2012-02-15 | 株式会社東芝 | 光半導体装置 |
| JP2012039013A (ja) * | 2010-08-10 | 2012-02-23 | Citizen Electronics Co Ltd | 発光装置の製造方法 |
| JP5622494B2 (ja) * | 2010-09-09 | 2014-11-12 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
| KR101711961B1 (ko) * | 2010-09-10 | 2017-03-03 | 삼성전자주식회사 | 발광 디바이스 |
| DE102010045403A1 (de) * | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| US9478719B2 (en) * | 2010-11-08 | 2016-10-25 | Bridgelux, Inc. | LED-based light source utilizing asymmetric conductors |
| KR20120062302A (ko) * | 2010-12-06 | 2012-06-14 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
| US9391247B2 (en) * | 2010-12-16 | 2016-07-12 | Cree, Inc. | High power LEDs with non-polymer material lenses and methods of making the same |
| KR101766299B1 (ko) * | 2011-01-20 | 2017-08-08 | 삼성전자 주식회사 | 발광소자 패키지 및 그 제조 방법 |
| JP5582048B2 (ja) * | 2011-01-28 | 2014-09-03 | 日亜化学工業株式会社 | 発光装置 |
| US9166126B2 (en) * | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| JP2012164902A (ja) * | 2011-02-09 | 2012-08-30 | Citizen Holdings Co Ltd | 半導体発光装置の製造方法 |
| KR101812168B1 (ko) * | 2011-04-19 | 2017-12-26 | 엘지전자 주식회사 | 발광 소자 패키지 및 이를 이용한 발광 장치 |
| US8525190B2 (en) * | 2011-06-15 | 2013-09-03 | Cree, Inc. | Conformal gel layers for light emitting diodes |
| US9653643B2 (en) * | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
| US9666764B2 (en) * | 2012-04-09 | 2017-05-30 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die |
| US9117941B2 (en) * | 2011-09-02 | 2015-08-25 | King Dragon International Inc. | LED package and method of the same |
| JP2013098202A (ja) * | 2011-10-28 | 2013-05-20 | Citizen Holdings Co Ltd | 半導体発光装置及びそれを備えた電子機器並びにその製造方法 |
| US9444024B2 (en) * | 2011-11-10 | 2016-09-13 | Cree, Inc. | Methods of forming optical conversion material caps |
| US9293641B2 (en) * | 2011-11-18 | 2016-03-22 | Invensas Corporation | Inverted optical device |
| US9335531B2 (en) * | 2011-12-30 | 2016-05-10 | Cree, Inc. | LED lighting using spectral notching |
| TWI606618B (zh) * | 2012-01-03 | 2017-11-21 | Lg伊諾特股份有限公司 | 發光裝置 |
| WO2013112435A1 (en) * | 2012-01-24 | 2013-08-01 | Cooledge Lighting Inc. | Light - emitting devices having discrete phosphor chips and fabrication methods |
| US8907362B2 (en) * | 2012-01-24 | 2014-12-09 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
| CN104094424B (zh) * | 2012-02-10 | 2016-12-21 | 皇家飞利浦有限公司 | 形成芯片级led封装的模制透镜及其制造方法 |
| JP2014053506A (ja) * | 2012-09-07 | 2014-03-20 | Toshiba Corp | 半導体発光装置及び発光モジュール |
| CN104854716B (zh) * | 2012-12-10 | 2017-06-20 | 西铁城时计株式会社 | Led装置及其制造方法 |
| US8754435B1 (en) * | 2013-02-19 | 2014-06-17 | Cooledge Lighting Inc. | Engineered-phosphor LED package and related methods |
| KR101504331B1 (ko) * | 2013-03-04 | 2015-03-19 | 삼성전자주식회사 | 발광소자 패키지 |
| US10120266B2 (en) * | 2014-01-06 | 2018-11-06 | Lumileds Llc | Thin LED flash for camera |
| JP2015176960A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 発光装置 |
-
2014
- 2014-07-17 EP EP14766210.0A patent/EP3022779B1/en active Active
- 2014-07-17 WO PCT/IB2014/063169 patent/WO2015008243A1/en not_active Ceased
- 2014-07-17 JP JP2016526744A patent/JP6608359B2/ja active Active
- 2014-07-17 KR KR1020167004242A patent/KR20160032236A/ko not_active Ceased
- 2014-07-17 CN CN201480041023.5A patent/CN105393374B/zh active Active
- 2014-07-17 US US14/906,256 patent/US20160172554A1/en not_active Abandoned
- 2014-07-18 TW TW103124829A patent/TWI735405B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7514867B2 (en) * | 2004-04-19 | 2009-04-07 | Panasonic Corporation | LED lamp provided with optical diffusion layer having increased thickness and method of manufacturing thereof |
| US20070241357A1 (en) * | 2004-10-29 | 2007-10-18 | Ledengin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
| US20090179207A1 (en) * | 2008-01-11 | 2009-07-16 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| JP2010177225A (ja) * | 2009-01-27 | 2010-08-12 | Citizen Electronics Co Ltd | 表面実装型発光素子の製造方法 |
| JP2012248672A (ja) * | 2011-05-27 | 2012-12-13 | Citizen Holdings Co Ltd | 半導体発光素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201505214A (zh) | 2015-02-01 |
| WO2015008243A1 (en) | 2015-01-22 |
| CN105393374A (zh) | 2016-03-09 |
| EP3022779B1 (en) | 2020-03-18 |
| JP6608359B2 (ja) | 2019-11-20 |
| US20160172554A1 (en) | 2016-06-16 |
| CN105393374B (zh) | 2019-05-28 |
| EP3022779A1 (en) | 2016-05-25 |
| KR20160032236A (ko) | 2016-03-23 |
| JP2016525799A (ja) | 2016-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102032392B1 (ko) | 칩 스케일 led 패키지를 형성하는 몰딩 렌즈 및 그의 제조 방법 | |
| TWI735405B (zh) | 發光裝置及其形成方法 | |
| TWI542047B (zh) | 發光二極體封裝結構之製法 | |
| KR102185099B1 (ko) | 돔을 가진 칩 규모 발광 디바이스 패키지 | |
| US9246072B2 (en) | LED mixing chamber with reflective walls formed in slots | |
| US20160172547A1 (en) | Surface-Mountable Optoelectronic Semiconductor Component and Method for Producing Same | |
| KR20140022031A (ko) | Led 위에 패터닝된 uv에 민감한 실리콘-형광체 층 | |
| JP2011155315A (ja) | 発光装置の製造方法 | |
| WO2014184698A1 (en) | Chip scale light emitting device package in molded leadframe | |
| KR20160059450A (ko) | 몰드 기판, 패키지 구조체 및 이들의 제조 방법 | |
| KR102155918B1 (ko) | 웨이퍼 레벨로 형성된 몰딩 화합물 내의 금속 필러들을 갖는 칩 스케일 발광 디바이스 | |
| JP2021039982A (ja) | 発光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |