JP6557899B2 - 結晶性積層構造体、半導体装置 - Google Patents

結晶性積層構造体、半導体装置 Download PDF

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JP6557899B2
JP6557899B2 JP2015095288A JP2015095288A JP6557899B2 JP 6557899 B2 JP6557899 B2 JP 6557899B2 JP 2015095288 A JP2015095288 A JP 2015095288A JP 2015095288 A JP2015095288 A JP 2015095288A JP 6557899 B2 JP6557899 B2 JP 6557899B2
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thin film
oxide semiconductor
semiconductor layer
type semiconductor
electrode
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JP2015228495A5 (enExample
JP2015228495A (ja
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俊実 人羅
俊実 人羅
真也 織田
真也 織田
章夫 高塚
章夫 高塚
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Flosfia Inc
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Flosfia Inc
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    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015095288A 2014-05-08 2015-05-07 結晶性積層構造体、半導体装置 Active JP6557899B2 (ja)

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JP2015095288A JP6557899B2 (ja) 2014-05-08 2015-05-07 結晶性積層構造体、半導体装置
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019142764A (ja) * 2014-05-08 2019-08-29 株式会社Flosfia 結晶性積層構造体、半導体装置
US11088242B2 (en) 2019-03-29 2021-08-10 Flosfia Inc. Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device

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JP6906217B2 (ja) * 2015-12-18 2021-07-21 株式会社Flosfia 半導体装置
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US10158029B2 (en) * 2016-02-23 2018-12-18 Analog Devices, Inc. Apparatus and methods for robust overstress protection in compound semiconductor circuit applications
JP6705962B2 (ja) * 2016-06-03 2020-06-03 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の成長方法及び結晶積層構造体
CN109478571B (zh) * 2016-07-26 2022-02-25 三菱电机株式会社 半导体装置及半导体装置的制造方法
JP6932904B2 (ja) * 2016-08-24 2021-09-08 株式会社Flosfia 半導体装置
US10804362B2 (en) * 2016-08-31 2020-10-13 Flosfia Inc. Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system
JP6951715B2 (ja) 2016-09-15 2021-10-20 株式会社Flosfia 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
JP2018067672A (ja) * 2016-10-21 2018-04-26 株式会社ブイ・テクノロジー 酸化物半導体装置及びその製造方法
CN109952392A (zh) * 2016-11-07 2019-06-28 株式会社Flosfia 结晶性氧化物半导体膜及半导体装置
JP7116409B2 (ja) * 2017-02-27 2022-08-10 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP6967238B2 (ja) * 2017-02-28 2021-11-17 株式会社タムラ製作所 ショットキーバリアダイオード
JP2019007048A (ja) * 2017-06-23 2019-01-17 トヨタ自動車株式会社 成膜装置
CN107293511B (zh) * 2017-07-05 2019-11-12 京东方科技集团股份有限公司 一种膜层退火设备及退火方法
CN107464844A (zh) * 2017-07-20 2017-12-12 中国电子科技集团公司第十三研究所 氧化镓场效应晶体管的制备方法
JP7166522B2 (ja) * 2017-08-21 2022-11-08 株式会社Flosfia 結晶膜の製造方法
JP7065440B2 (ja) * 2017-09-04 2022-05-12 株式会社Flosfia 半導体装置の製造方法および半導体装置
GB2601276B (en) * 2017-12-11 2022-09-28 Pragmatic Printing Ltd Schottky diode
GB2569196B (en) 2017-12-11 2022-04-20 Pragmatic Printing Ltd Schottky diode
CN108493234A (zh) * 2018-05-10 2018-09-04 广东省半导体产业技术研究院 一种鳍式沟道的氧化镓基垂直场效应晶体管及其制备方法
TWI897850B (zh) * 2018-07-12 2025-09-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置和半導體系統
TW202006945A (zh) * 2018-07-12 2020-02-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置和半導體系統
TWI879736B (zh) * 2018-07-12 2025-04-11 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置和半導體系統
WO2020013262A1 (ja) * 2018-07-12 2020-01-16 株式会社Flosfia 半導体装置および半導体装置を含む半導体システム
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