JP6538361B2 - 表示装置、及び電子機器 - Google Patents

表示装置、及び電子機器 Download PDF

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Publication number
JP6538361B2
JP6538361B2 JP2015018954A JP2015018954A JP6538361B2 JP 6538361 B2 JP6538361 B2 JP 6538361B2 JP 2015018954 A JP2015018954 A JP 2015018954A JP 2015018954 A JP2015018954 A JP 2015018954A JP 6538361 B2 JP6538361 B2 JP 6538361B2
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Japan
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display
area
display panel
region
layer
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Japanese (ja)
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JP2015180924A5 (enExample
JP2015180924A (ja
Inventor
三宅　博之
博之 三宅
池田　寿雄
寿雄 池田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015018954A priority Critical patent/JP6538361B2/ja
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Publication of JP2015180924A5 publication Critical patent/JP2015180924A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/18—Tiled displays
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1652—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being flexible, e.g. mimicking a sheet of paper, or rollable
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/302—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
    • G09F9/3026—Video wall, i.e. stackable semiconductor matrix display modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/147—Structural association of two or more printed circuits at least one of the printed circuits being bent or folded, e.g. by using a flexible printed circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/86—Series electrical configurations of multiple OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Multimedia (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrophonic Musical Instruments (AREA)
JP2015018954A 2014-02-11 2015-02-03 表示装置、及び電子機器 Active JP6538361B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015018954A JP6538361B2 (ja) 2014-02-11 2015-02-03 表示装置、及び電子機器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014023930 2014-02-11
JP2014023930 2014-02-11
JP2014045128 2014-03-07
JP2014045128 2014-03-07
JP2015018954A JP6538361B2 (ja) 2014-02-11 2015-02-03 表示装置、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019105982A Division JP2019207410A (ja) 2014-02-11 2019-06-06 表示装置

Publications (3)

Publication Number Publication Date
JP2015180924A JP2015180924A (ja) 2015-10-15
JP2015180924A5 JP2015180924A5 (enExample) 2018-03-22
JP6538361B2 true JP6538361B2 (ja) 2019-07-03

Family

ID=53775643

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2015018954A Active JP6538361B2 (ja) 2014-02-11 2015-02-03 表示装置、及び電子機器
JP2019105982A Withdrawn JP2019207410A (ja) 2014-02-11 2019-06-06 表示装置
JP2021035139A Withdrawn JP2021105720A (ja) 2014-02-11 2021-03-05 表示装置
JP2022173237A Active JP7430765B2 (ja) 2014-02-11 2022-10-28 発光装置
JP2024012952A Withdrawn JP2024054172A (ja) 2014-02-11 2024-01-31 表示装置
JP2025020393A Pending JP2025081401A (ja) 2014-02-11 2025-02-11 表示装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2019105982A Withdrawn JP2019207410A (ja) 2014-02-11 2019-06-06 表示装置
JP2021035139A Withdrawn JP2021105720A (ja) 2014-02-11 2021-03-05 表示装置
JP2022173237A Active JP7430765B2 (ja) 2014-02-11 2022-10-28 発光装置
JP2024012952A Withdrawn JP2024054172A (ja) 2014-02-11 2024-01-31 表示装置
JP2025020393A Pending JP2025081401A (ja) 2014-02-11 2025-02-11 表示装置

Country Status (7)

Country Link
US (6) US9614022B2 (enExample)
JP (6) JP6538361B2 (enExample)
KR (3) KR102670944B1 (enExample)
CN (2) CN105981193B (enExample)
DE (1) DE112015000739T5 (enExample)
TW (4) TWI834556B (enExample)
WO (1) WO2015121770A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016167049A (ja) * 2015-01-21 2016-09-15 株式会社半導体エネルギー研究所 表示装置、表示ユニット、表示システム
KR20180089156A (ko) * 2017-01-31 2018-08-08 엘지전자 주식회사 디스플레이 장치

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015228367A (ja) 2014-05-02 2015-12-17 株式会社半導体エネルギー研究所 半導体装置、入出力装置、及び電子機器
JP2016029464A (ja) 2014-07-18 2016-03-03 株式会社半導体エネルギー研究所 表示装置
US20160054606A1 (en) * 2014-08-22 2016-02-25 Kabushiki Kaisha Toshiba Flat panel display device
CN106796769B (zh) 2014-10-08 2019-08-20 株式会社半导体能源研究所 显示装置
JP2016095502A (ja) 2014-11-11 2016-05-26 株式会社半導体エネルギー研究所 表示システム、表示装置
CN107347254B (zh) 2014-11-28 2020-10-23 株式会社半导体能源研究所 图像处理装置、显示系统以及电子设备
JPWO2016116833A1 (ja) 2015-01-22 2017-12-21 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP6430341B2 (ja) * 2015-08-06 2018-11-28 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP3200770U (ja) * 2015-08-24 2015-11-05 スリーエム イノベイティブ プロパティズ カンパニー シート複合体、シート保持体、印刷用シート及び印刷物
DE112016004055B4 (de) 2015-09-08 2024-02-08 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtungen und elektronisches gerät
US10516118B2 (en) 2015-09-30 2019-12-24 Semiconductor Energy Laboratory Co., Ltd. Electronic device, display device, method for manufacturing the same, and system including a plurality of display devices
JP2017090528A (ja) * 2015-11-04 2017-05-25 株式会社ジャパンディスプレイ 表示装置
US10424632B2 (en) * 2015-11-30 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR102617041B1 (ko) 2015-12-28 2023-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 장치, 텔레비전 시스템, 및 전자 기기
JP2017151347A (ja) * 2016-02-26 2017-08-31 株式会社ジャパンディスプレイ 表示装置
JP2017207747A (ja) 2016-05-17 2017-11-24 株式会社半導体エネルギー研究所 表示システムおよび移動体
US9887225B2 (en) * 2016-05-27 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Pixel with spacer layer covering photodiode
KR102666192B1 (ko) * 2016-07-28 2024-05-14 삼성디스플레이 주식회사 표시 장치
WO2018043337A1 (ja) * 2016-09-01 2018-03-08 凸版印刷株式会社 大型表示パネル及びその製造方法
KR102636734B1 (ko) * 2016-09-07 2024-02-14 삼성디스플레이 주식회사 유기발광 표시장치
EP3531403B1 (en) * 2016-10-19 2022-09-28 Organo-Circuit Incorporation Active matrix led display
KR20250026406A (ko) 2016-11-30 2025-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN106597721B (zh) * 2016-12-05 2020-10-27 Tcl科技集团股份有限公司 一种显示面板、显示装置及显示面板的制作方法
US10872565B2 (en) 2017-01-16 2020-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI748035B (zh) 2017-01-20 2021-12-01 日商半導體能源硏究所股份有限公司 顯示系統及電子裝置
JP7079239B2 (ja) 2017-03-03 2022-06-01 株式会社半導体エネルギー研究所 車両
CN110463347A (zh) * 2017-03-30 2019-11-15 夏普株式会社 显示装置及其制造方法
US11158823B2 (en) 2017-03-31 2021-10-26 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US10984757B2 (en) 2017-05-19 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Machine learning method, machine learning system, and display system
JP2018194719A (ja) * 2017-05-19 2018-12-06 株式会社半導体エネルギー研究所 表示システム及び電子機器
US10268238B2 (en) * 2017-06-08 2019-04-23 Google Llc Foldable display neutral axis management with thin, high modulus layers
US10203929B2 (en) 2017-06-13 2019-02-12 International Business Machines Corporation Extendable display strips
KR20190010052A (ko) * 2017-07-20 2019-01-30 엘지전자 주식회사 디스플레이 디바이스
JP7128187B2 (ja) * 2017-07-27 2022-08-30 株式会社半導体エネルギー研究所 表示装置
CN110998703A (zh) 2017-08-24 2020-04-10 株式会社半导体能源研究所 图像处理方法
US11302898B2 (en) 2017-08-25 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Display panel having multiple common electrodes
US10884463B2 (en) 2017-09-29 2021-01-05 Sharp Kabushiki Kaisha Method for manufacturing display device and display device
JP6556812B2 (ja) * 2017-11-28 2019-08-07 Ｎｉｓｓｈａ株式会社 ハードコート付フィルムタイプタッチセンサとこれを用いたフレキシブルディバイス
KR102396782B1 (ko) * 2017-11-29 2022-05-12 엘지디스플레이 주식회사 타일링 구조의 oled 조명 장치
TWI902196B (zh) * 2017-11-30 2025-10-21 日商半導體能源研究所股份有限公司 顯示面板、顯示裝置、顯示模組、電子裝置及顯示面板的製造方法
USD894896S1 (en) * 2017-12-14 2020-09-01 Compal Electronics, Inc. Notebook computer
USD894177S1 (en) * 2017-12-14 2020-08-25 Compal Electronics, Inc. Notebook computer
KR102529149B1 (ko) * 2017-12-27 2023-05-04 엘지디스플레이 주식회사 폴더블 디스플레이 장치
CN108334163A (zh) * 2018-01-05 2018-07-27 联想(北京)有限公司 一种双屏电子设备及其显示控制方法
CN208077524U (zh) * 2018-03-23 2018-11-09 京东方科技集团股份有限公司 一种显示装置
CN110556068B (zh) * 2018-05-31 2020-12-15 京东方科技集团股份有限公司 柔性显示屏、柔性显示屏的弯曲检测方法及装置
KR102578423B1 (ko) 2018-07-03 2023-09-13 엘지디스플레이 주식회사 다중패널 유기발광 표시장치
KR102554461B1 (ko) 2018-07-26 2023-07-10 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR102636492B1 (ko) * 2018-07-30 2024-02-14 삼성디스플레이 주식회사 표시 장치
CN112567446B (zh) 2018-08-21 2024-09-20 株式会社半导体能源研究所 显示装置及电子设备
CN109388286B (zh) * 2018-09-26 2022-03-22 Oppo广东移动通信有限公司 接近状态判断方法和装置
US20220006051A1 (en) * 2018-09-27 2022-01-06 Sharp Kabushiki Kaisha Display device
KR102706503B1 (ko) * 2018-10-08 2024-09-12 엘지디스플레이 주식회사 디스플레이 장치
CN109683520B (zh) * 2018-12-21 2020-12-11 广州励丰文化科技股份有限公司 一种基于位置检测的展演控制方法及控制系统
US20200219455A1 (en) * 2019-01-03 2020-07-09 Innolux Corporation Display device
JP7116431B2 (ja) * 2019-01-24 2022-08-10 株式会社ゼロ・サム 表示装置、その表示装置の製造方法、表示システム
US10629566B1 (en) * 2019-01-28 2020-04-21 GM Global Technology Operations LLC Seamlessly integrated soft OLEDs
CN110428733A (zh) * 2019-07-22 2019-11-08 深圳市华星光电半导体显示技术有限公司 折叠式显示面板
CN110379314B (zh) * 2019-07-23 2020-10-16 深圳市华星光电半导体显示技术有限公司 一种无缝拼接屏
WO2021112291A1 (ko) * 2019-12-05 2021-06-10 엘지전자 주식회사 이동 단말기
CN111106156B (zh) 2020-01-07 2022-01-25 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
WO2021246802A1 (ko) * 2020-06-05 2021-12-09 삼성전자 주식회사 복수의 디스플레이들을 포함하는 전자 장치 및 그 동작 방법
KR20220039987A (ko) * 2020-09-22 2022-03-30 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
DE112022002036T5 (de) 2021-04-08 2024-02-29 Semiconductor Energy Laboratory Co., Ltd. Fahrzeugsteuervorrichtung und Fahrzeug
WO2022234382A1 (ja) 2021-05-07 2022-11-10 株式会社半導体エネルギー研究所 表示装置
US20250008793A1 (en) * 2021-05-13 2025-01-02 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR102893631B1 (ko) 2021-10-07 2025-12-02 삼성디스플레이 주식회사 전자 장치
CN116107446A (zh) * 2021-11-11 2023-05-12 群创光电股份有限公司 可挠式电子装置
KR20230083374A (ko) * 2021-12-02 2023-06-12 삼성디스플레이 주식회사 표시 장치
JP7491892B2 (ja) * 2021-12-21 2024-05-28 株式会社シマノ 制御システム、および、人力駆動車用制御装置
TWI799068B (zh) * 2022-01-10 2023-04-11 友達光電股份有限公司 拼接顯示裝置
CN114694517B (zh) * 2022-03-25 2023-06-02 Tcl华星光电技术有限公司 拼接显示面板
JP2024000840A (ja) * 2022-06-21 2024-01-09 株式会社ジャパンディスプレイ 表示装置
CN120827253A (zh) * 2024-04-18 2025-10-24 七橡树地产发展有限公司 用于家具和一般家饰用品的部件的面板

Family Cites Families (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05109484A (ja) 1991-10-17 1993-04-30 Tohoku Pioneer Kk Ｅｌデイスプレイユニツト
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH0720443A (ja) * 1993-06-30 1995-01-24 Hitachi Ltd 液晶式大型ディスプレイ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
DE69635107D1 (de) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US5801797A (en) 1996-03-18 1998-09-01 Kabushiki Kaisha Toshiba Image display apparatus includes an opposite board sandwiched by array boards with end portions of the array boards being offset
JPH09311344A (ja) 1996-03-18 1997-12-02 Toshiba Corp 画像表示装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4009923B2 (ja) * 1999-09-30 2007-11-21 セイコーエプソン株式会社 Ｅｌパネル
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
SG118118A1 (en) 2001-02-22 2006-01-27 Semiconductor Energy Lab Organic light emitting device and display using the same
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002297064A (ja) * 2001-03-30 2002-10-09 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置およびその製造方法
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7362046B2 (en) * 2001-11-10 2008-04-22 Image Portal Limited Partial overlapping display tiles of organic light emitting device
GB0127090D0 (en) * 2001-11-10 2002-01-02 Image Portal Ltd Display
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2004251981A (ja) 2003-02-18 2004-09-09 Seiko Epson Corp 複合型表示装置
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005123153A (ja) 2003-09-24 2005-05-12 Fuji Photo Film Co Ltd エレクトロルミネッセンス表示パネル、エレクトロルミネッセンス表示装置およびそれらの製造方法
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006010811A (ja) 2004-06-23 2006-01-12 Sony Corp 表示装置
US20060044215A1 (en) * 2004-08-24 2006-03-02 Brody Thomas P Scalable tiled display assembly for forming a large-area flat-panel display by using modular display tiles
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CN102945857B (zh) 2004-11-10 2015-06-03 佳能株式会社 无定形氧化物和场效应晶体管
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
WO2006051995A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
RU2358354C2 (ru) 2004-11-10 2009-06-10 Кэнон Кабусики Кайся Светоизлучающее устройство
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US20070200133A1 (en) 2005-04-01 2007-08-30 Akira Hashimoto Led assembly and manufacturing method
US20060232495A1 (en) * 2005-04-19 2006-10-19 Toppoly Optoelectronics Corp. Dual panel display
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1995787A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method therof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101050767B1 (ko) 2005-11-15 2011-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
US8458932B2 (en) * 2006-08-11 2013-06-11 Alameda Technology, Llc Optical illusion device
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
CN100550370C (zh) * 2006-09-29 2009-10-14 宝创科技股份有限公司 发光二极管发光装置的平面结构
KR20160150648A (ko) 2006-09-29 2016-12-30 오스람 실바니아 인코포레이티드 유기 발광 소자 및 조명 장치
DE102006060781B4 (de) 2006-09-29 2021-09-16 Pictiva Displays International Limited Organisches Leuchtmittel
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP2009139463A (ja) * 2007-12-04 2009-06-25 Rohm Co Ltd 有機ｅｌ発光装置
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
KR20090105265A (ko) * 2008-04-02 2009-10-07 삼성모바일디스플레이주식회사 유기 전계발광 표시패널을 이용한 멀티 비전 디스플레이
TW200945940A (en) * 2008-04-29 2009-11-01 Blue Star Lighting Technology Co Ltd Flexible LED display
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP4650703B2 (ja) * 2008-12-25 2011-03-16 ソニー株式会社 表示パネルおよびモジュール並びに電子機器
TWI394999B (zh) 2009-01-09 2013-05-01 Prime View Int Co Ltd 多螢幕電子裝置
JP2010256769A (ja) 2009-04-28 2010-11-11 Nippon Seiki Co Ltd 発光表示装置
KR101711678B1 (ko) * 2009-05-02 2017-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 장치
JP2010266777A (ja) 2009-05-18 2010-11-25 Victor Co Of Japan Ltd 折り畳み式ディスプレイ
TW201110802A (en) 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
JP5509703B2 (ja) * 2009-07-15 2014-06-04 セイコーエプソン株式会社 電気光学装置および電子機器
CN101996535A (zh) * 2009-08-25 2011-03-30 精工爱普生株式会社 电光学装置和电子设备
JP5444940B2 (ja) 2009-08-25 2014-03-19 セイコーエプソン株式会社 電気光学装置、および電子機器
JP5644075B2 (ja) 2009-08-25 2014-12-24 セイコーエプソン株式会社 電気光学装置、および電子機器
US8305294B2 (en) 2009-09-08 2012-11-06 Global Oled Technology Llc Tiled display with overlapping flexible substrates
JP2011075823A (ja) * 2009-09-30 2011-04-14 Panasonic Corp 表示装置
WO2011043099A1 (ja) * 2009-10-08 2011-04-14 シャープ株式会社 発光部を有する複数のパネルを繋げてなる発光パネル装置、それを備えた画像表示装置および照明装置
US9024936B2 (en) 2009-12-03 2015-05-05 Sharp Kabushiki Kaisha Image display device, panel and panel manufacturing method
US20110157893A1 (en) 2009-12-28 2011-06-30 Ngai Peter Y Y Oled luminaire having observable surfaces with differential visual effects
CN102742371B (zh) 2010-01-29 2015-11-25 荷兰应用自然科学研究组织Tno 组件、用于组件的部件以及制造组件的方法
US8344389B2 (en) 2010-01-29 2013-01-01 General Electric Company Optoelectronic device array
JP2011192567A (ja) * 2010-03-16 2011-09-29 Rohm Co Ltd 有機ｅｌ装置
JP2012028638A (ja) * 2010-07-26 2012-02-09 Dainippon Printing Co Ltd 有機エレクトロルミネッセンスパネル、有機エレクトロルミネッセンス装置および有機エレクトロルミネッセンスパネルの製造方法
TW201241801A (en) * 2011-04-01 2012-10-16 Dynascan Technology Corp Programmable advertisement light-box
US9400576B2 (en) 2011-07-19 2016-07-26 Apple Inc. Touch sensor arrangements for organic light-emitting diode displays
JP2013156452A (ja) * 2012-01-30 2013-08-15 Fujitsu Ltd マルチディスプレイ素子、マルチディスプレイ装置およびマルチディスプレイ素子の駆動方法
WO2013128740A1 (ja) * 2012-02-29 2013-09-06 コニカミノルタ株式会社 発光パネルおよびその製造方法
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
TWI497405B (zh) * 2012-04-11 2015-08-21 Inst Information Industry 操作複數軟性顯示器互動的方法及互動系統
KR101964149B1 (ko) * 2012-11-20 2019-04-02 삼성디스플레이 주식회사 양면 발광형 표시장치
GB2511549B (en) * 2013-03-07 2020-04-22 Plastic Logic Ltd Tiled Displays
KR102138753B1 (ko) * 2013-11-22 2020-07-29 삼성디스플레이 주식회사 접이식 표시장치

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016167049A (ja) * 2015-01-21 2016-09-15 株式会社半導体エネルギー研究所 表示装置、表示ユニット、表示システム
US10572211B2 (en) 2015-01-21 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display unit, and display system
JP2021073504A (ja) * 2015-01-21 2021-05-13 株式会社半導体エネルギー研究所 表示システム
US11093204B2 (en) 2015-01-21 2021-08-17 Semiconductor Energy Laboratory Co., Ltd. Display device, display unit, and display system
JP2023002591A (ja) * 2015-01-21 2023-01-10 株式会社半導体エネルギー研究所 表示システム
US11567724B2 (en) 2015-01-21 2023-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device, display unit, and display system
US11922091B2 (en) 2015-01-21 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Display device, display unit, and display system
JP2024105556A (ja) * 2015-01-21 2024-08-06 株式会社半導体エネルギー研究所 表示装置
US12321655B2 (en) 2015-01-21 2025-06-03 Semiconductor Energy Laboratory Co., Ltd. Display device, display unit, and display system
KR20180089156A (ko) * 2017-01-31 2018-08-08 엘지전자 주식회사 디스플레이 장치
KR102628093B1 (ko) 2017-01-31 2024-01-23 엘지전자 주식회사 디스플레이 장치

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