JP6490679B2 - 複数の注入層をもつ高電圧電界効果トランジスタ - Google Patents

複数の注入層をもつ高電圧電界効果トランジスタ Download PDF

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Publication number
JP6490679B2
JP6490679B2 JP2016525370A JP2016525370A JP6490679B2 JP 6490679 B2 JP6490679 B2 JP 6490679B2 JP 2016525370 A JP2016525370 A JP 2016525370A JP 2016525370 A JP2016525370 A JP 2016525370A JP 6490679 B2 JP6490679 B2 JP 6490679B2
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oxide layer
type
region
forming
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JP2016526804A (ja
JP2016526804A5 (enExample
Inventor
ヴィジェイ パーササラサイ
ヴィジェイ パーササラサイ
スジット バネルジー
スジット バネルジー
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パワー・インテグレーションズ・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/054—Forming charge compensation regions, e.g. superjunctions by high energy implantations in bulk semiconductor bodies, e.g. forming pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2016525370A 2013-07-12 2014-06-28 複数の注入層をもつ高電圧電界効果トランジスタ Active JP6490679B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/941,119 2013-07-12
US13/941,119 US9660053B2 (en) 2013-07-12 2013-07-12 High-voltage field-effect transistor having multiple implanted layers
PCT/US2014/044769 WO2015006074A1 (en) 2013-07-12 2014-06-28 High-voltage field-effect transistor having multiple implanted layers

Publications (3)

Publication Number Publication Date
JP2016526804A JP2016526804A (ja) 2016-09-05
JP2016526804A5 JP2016526804A5 (enExample) 2017-08-31
JP6490679B2 true JP6490679B2 (ja) 2019-03-27

Family

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JP2016525370A Active JP6490679B2 (ja) 2013-07-12 2014-06-28 複数の注入層をもつ高電圧電界効果トランジスタ

Country Status (6)

Country Link
US (1) US9660053B2 (enExample)
JP (1) JP6490679B2 (enExample)
KR (1) KR102283496B1 (enExample)
CN (1) CN105378934B (enExample)
DE (1) DE112014003246B4 (enExample)
WO (1) WO2015006074A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11355580B2 (en) * 2019-10-18 2022-06-07 Semiconductor Components Industries, Llc Lateral DMOS device with step-profiled RESURF and drift structures
CN113130632B (zh) * 2019-12-31 2022-08-12 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制备方法

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638867A (en) 1979-09-07 1981-04-14 Hitachi Ltd Insulated gate type field effect transistor
JPS5712557A (en) 1980-06-25 1982-01-22 Sanyo Electric Co Ltd High dielectric resisting mos transistor
JPS5712558A (en) 1980-06-25 1982-01-22 Sanyo Electric Co Ltd Mos transistor having high withstand voltage
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4462041A (en) 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
US4454648A (en) * 1982-03-08 1984-06-19 Mcdonnell Douglas Corporation Method of making integrated MNOS and CMOS devices in a bulk silicon wafer
US4626879A (en) 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
US4503601A (en) * 1983-04-18 1985-03-12 Ncr Corporation Oxide trench structure for polysilicon gates and interconnects
JPS6064771A (ja) 1983-09-19 1985-04-13 Daihen Corp 溶接機制御装置
DE3404834A1 (de) 1984-02-08 1985-08-08 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Halbleiter-leistungsbauelement, insbesondere thyristor und gridistor, sowie verfahren zu dessen herstellung
US4618541A (en) 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
US4665426A (en) 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4764800A (en) 1986-05-07 1988-08-16 Advanced Micro Devices, Inc. Seal structure for an integrated circuit
US4894694A (en) 1986-10-31 1990-01-16 Hewlett-Packard Company MOSFET structure and method for making same
US5010024A (en) 1987-03-04 1991-04-23 Advanced Micro Devices, Inc. Passivation for integrated circuit structures
US4811075A (en) 1987-04-24 1989-03-07 Power Integrations, Inc. High voltage MOS transistors
US4890146A (en) 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device
US4922327A (en) 1987-12-24 1990-05-01 University Of Toronto Innovations Foundation Semiconductor LDMOS device with upper and lower passages
US5025296A (en) 1988-02-29 1991-06-18 Motorola, Inc. Center tapped FET
US5237193A (en) 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
EP0371785B1 (en) 1988-11-29 1996-05-01 Kabushiki Kaisha Toshiba Lateral conductivity modulated MOSFET
US4950977A (en) * 1988-12-21 1990-08-21 At&T Bell Laboratories Method of measuring mobile ion concentration in semiconductor devices
JPH02214114A (ja) * 1989-02-15 1990-08-27 Mitsubishi Electric Corp 半導体装置の製造方法
US5270226A (en) * 1989-04-03 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method for LDDFETS using oblique ion implantion technique
JPH038323A (ja) * 1989-06-06 1991-01-16 Nec Corp イオン注入方法およびイオン注入装置
JP2597412B2 (ja) 1990-03-20 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
US5040045A (en) 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
JP2991753B2 (ja) 1990-08-27 1999-12-20 松下電子工業株式会社 半導体装置及びその製造方法
JP2599493B2 (ja) 1990-08-27 1997-04-09 松下電子工業株式会社 半導体装置
JP2609753B2 (ja) * 1990-10-17 1997-05-14 株式会社東芝 半導体装置
US5386136A (en) 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5146298A (en) 1991-08-16 1992-09-08 Eklund Klas H Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor
US5258636A (en) 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
US5270264A (en) 1991-12-20 1993-12-14 Intel Corporation Process for filling submicron spaces with dielectric
JP3435173B2 (ja) 1992-07-10 2003-08-11 株式会社日立製作所 半導体装置
JP3076468B2 (ja) 1993-01-26 2000-08-14 松下電子工業株式会社 半導体装置
US5313082A (en) 1993-02-16 1994-05-17 Power Integrations, Inc. High voltage MOS transistor with a low on-resistance
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
US5349225A (en) 1993-04-12 1994-09-20 Texas Instruments Incorporated Field effect transistor with a lightly doped drain
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
JP3218267B2 (ja) 1994-04-11 2001-10-15 新電元工業株式会社 半導体装置
US5523604A (en) 1994-05-13 1996-06-04 International Rectifier Corporation Amorphous silicon layer for top surface of semiconductor device
CN1040814C (zh) 1994-07-20 1998-11-18 电子科技大学 一种用于半导体器件的表面耐压区
US5494853A (en) 1994-07-25 1996-02-27 United Microelectronics Corporation Method to solve holes in passivation by metal layout
US5521105A (en) 1994-08-12 1996-05-28 United Microelectronics Corporation Method of forming counter-doped island in power MOSFET
US5550405A (en) 1994-12-21 1996-08-27 Advanced Micro Devices, Incorporated Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS
US5656543A (en) 1995-02-03 1997-08-12 National Semiconductor Corporation Fabrication of integrated circuits with borderless vias
US5670828A (en) 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
US5659201A (en) 1995-06-05 1997-08-19 Advanced Micro Devices, Inc. High conductivity interconnection line
KR100188096B1 (ko) 1995-09-14 1999-06-01 김광호 반도체 장치 및 그 제조 방법
WO1997029518A1 (de) 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
US6168983B1 (en) * 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
WO1998020562A1 (en) 1996-11-05 1998-05-14 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region and method of making the same
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
KR100228331B1 (ko) 1996-12-30 1999-11-01 김영환 반도체 소자의 삼중웰 제조 방법
JP3393544B2 (ja) 1997-02-26 2003-04-07 シャープ株式会社 半導体装置の製造方法
US5843817A (en) * 1997-09-19 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Process for integrating stacked capacitor DRAM devices with MOSFET devices used for high performance logic circuits
JP3059423B2 (ja) * 1998-10-19 2000-07-04 松下電子工業株式会社 半導体装置の製造方法
US6174758B1 (en) * 1999-03-03 2001-01-16 Tower Semiconductor Ltd. Semiconductor chip having fieldless array with salicide gates and methods for making same
US6429077B1 (en) * 1999-12-02 2002-08-06 United Microelectronics Corp. Method of forming a lateral diffused metal-oxide semiconductor transistor
US6509220B2 (en) * 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6424007B1 (en) 2001-01-24 2002-07-23 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6448625B1 (en) * 2001-03-16 2002-09-10 Semiconductor Components Industries Llc High voltage metal oxide device with enhanced well region
US6489224B1 (en) * 2001-05-31 2002-12-03 Sun Microsystems, Inc. Method for engineering the threshold voltage of a device using buried wells
US6773997B2 (en) * 2001-07-31 2004-08-10 Semiconductor Components Industries, L.L.C. Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability
JP3546037B2 (ja) * 2001-12-03 2004-07-21 松下電器産業株式会社 半導体装置の製造方法
US7011998B1 (en) 2004-01-12 2006-03-14 Advanced Micro Devices, Inc. High voltage transistor scaling tilt ion implant method
KR100539247B1 (ko) * 2004-02-04 2005-12-27 삼성전자주식회사 스플릿 게이트형 비휘발성 반도체 메모리 소자 및 그제조방법
EP1742250A1 (en) 2005-07-08 2007-01-10 STMicroelectronics S.r.l. Power field effect transistor and manufacturing method thereof
EP1946378B1 (en) 2005-11-02 2012-12-12 Nxp B.V. Method of manufacturing a semiconductor device
KR20100064556A (ko) 2008-12-05 2010-06-15 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
US8362557B2 (en) * 2009-12-02 2013-01-29 Fairchild Semiconductor Corporation Stepped-source LDMOS architecture
US8349678B2 (en) * 2010-02-08 2013-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain

Also Published As

Publication number Publication date
DE112014003246T5 (de) 2016-04-07
KR102283496B1 (ko) 2021-07-29
DE112014003246B4 (de) 2025-04-03
US20150014770A1 (en) 2015-01-15
CN105378934B (zh) 2018-12-11
JP2016526804A (ja) 2016-09-05
US9660053B2 (en) 2017-05-23
CN105378934A (zh) 2016-03-02
WO2015006074A1 (en) 2015-01-15
KR20160030171A (ko) 2016-03-16

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