JP6316412B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP6316412B2
JP6316412B2 JP2016521067A JP2016521067A JP6316412B2 JP 6316412 B2 JP6316412 B2 JP 6316412B2 JP 2016521067 A JP2016521067 A JP 2016521067A JP 2016521067 A JP2016521067 A JP 2016521067A JP 6316412 B2 JP6316412 B2 JP 6316412B2
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power semiconductor
lead terminal
semiconductor device
circuit board
electrode
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Japanese (ja)
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JPWO2015178296A1 (ja
Inventor
藤野　純司
純司 藤野
三紀夫 石原
三紀夫 石原
雅芳 新飼
雅芳 新飼
啓行 原田
啓行 原田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • H—ELECTRICITY
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
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    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
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    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
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    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
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    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
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    • H10W72/07631—Techniques
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    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
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    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
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    • H10W72/651—Materials of strap connectors
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    • H10W72/655—Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
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    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2016521067A 2014-05-20 2015-05-15 電力用半導体装置 Active JP6316412B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014103985 2014-05-20
JP2014103985 2014-05-20
PCT/JP2015/063993 WO2015178296A1 (ja) 2014-05-20 2015-05-15 電力用半導体装置

Related Child Applications (1)

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JP2018059440A Division JP2018093244A (ja) 2014-05-20 2018-03-27 電力用半導体装置

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JPWO2015178296A1 JPWO2015178296A1 (ja) 2017-04-20
JP6316412B2 true JP6316412B2 (ja) 2018-04-25

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JP2018059440A Pending JP2018093244A (ja) 2014-05-20 2018-03-27 電力用半導体装置

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US (1) US10658284B2 (https=)
JP (2) JP6316412B2 (https=)
CN (2) CN106104779B (https=)
DE (1) DE112015002348T5 (https=)
WO (1) WO2015178296A1 (https=)

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JP6759784B2 (ja) * 2016-07-12 2020-09-23 三菱電機株式会社 半導体モジュール
JP6717103B2 (ja) * 2016-08-03 2020-07-01 株式会社豊田自動織機 半導体モジュール
JP6907670B2 (ja) * 2017-04-17 2021-07-21 三菱電機株式会社 半導体装置および半導体装置の製造方法
DE112017008277B4 (de) 2017-12-13 2025-03-13 Mitsubishi Electric Corporation Halbleitervorrichtung und leistungsumwandlungsvorrichtung
US10600725B2 (en) 2018-05-29 2020-03-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having a grooved clip frame
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JP7091878B2 (ja) * 2018-06-22 2022-06-28 三菱電機株式会社 パワーモジュール、電力変換装置、及びパワーモジュールの製造方法
JP6457144B1 (ja) * 2018-09-19 2019-01-23 株式会社加藤電器製作所 半導体モジュール
JP7108567B2 (ja) 2019-03-20 2022-07-28 株式会社東芝 パワーモジュール
CN111627864B (zh) * 2020-06-03 2022-06-07 西安卫光科技有限公司 一种高结温SiC陶瓷封装硅堆外壳结构
JP7489933B2 (ja) 2021-02-24 2024-05-24 三菱電機株式会社 半導体装置及びその製造方法
CN117836928A (zh) * 2021-08-18 2024-04-05 三菱电机株式会社 半导体装置
JP7811033B2 (ja) * 2024-07-11 2026-02-04 大分デバイステクノロジー株式会社 パワー半導体デバイスの製造方法

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CN110120375A (zh) 2019-08-13
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