CN106104779B - 功率用半导体装置 - Google Patents

功率用半导体装置 Download PDF

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Publication number
CN106104779B
CN106104779B CN201580013957.2A CN201580013957A CN106104779B CN 106104779 B CN106104779 B CN 106104779B CN 201580013957 A CN201580013957 A CN 201580013957A CN 106104779 B CN106104779 B CN 106104779B
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Prior art keywords
power semiconductor
lead terminal
semiconductor device
electrode
inclined surface
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Chinese (zh)
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CN106104779A (zh
Inventor
藤野纯司
石原三纪夫
新饲雅芳
原田启行
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to CN201910381937.0A priority Critical patent/CN110120375A/zh
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
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    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
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    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
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    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
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    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
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    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN201580013957.2A 2014-05-20 2015-05-15 功率用半导体装置 Active CN106104779B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910381937.0A CN110120375A (zh) 2014-05-20 2015-05-15 功率用半导体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014103985 2014-05-20
JP2014-103985 2014-05-20
PCT/JP2015/063993 WO2015178296A1 (ja) 2014-05-20 2015-05-15 電力用半導体装置

Related Child Applications (1)

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CN201910381937.0A Division CN110120375A (zh) 2014-05-20 2015-05-15 功率用半导体装置

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CN106104779A CN106104779A (zh) 2016-11-09
CN106104779B true CN106104779B (zh) 2019-05-10

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CN201910381937.0A Withdrawn CN110120375A (zh) 2014-05-20 2015-05-15 功率用半导体装置

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US (1) US10658284B2 (https=)
JP (2) JP6316412B2 (https=)
CN (2) CN106104779B (https=)
DE (1) DE112015002348T5 (https=)
WO (1) WO2015178296A1 (https=)

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WO2015178296A1 (ja) * 2014-05-20 2015-11-26 三菱電機株式会社 電力用半導体装置
DE202016101688U1 (de) * 2016-03-30 2016-04-21 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Schaltungsträger
JP6759784B2 (ja) * 2016-07-12 2020-09-23 三菱電機株式会社 半導体モジュール
JP6717103B2 (ja) * 2016-08-03 2020-07-01 株式会社豊田自動織機 半導体モジュール
JP6907670B2 (ja) * 2017-04-17 2021-07-21 三菱電機株式会社 半導体装置および半導体装置の製造方法
DE112017008277B4 (de) 2017-12-13 2025-03-13 Mitsubishi Electric Corporation Halbleitervorrichtung und leistungsumwandlungsvorrichtung
US10600725B2 (en) 2018-05-29 2020-03-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor module having a grooved clip frame
CN110914981B (zh) * 2018-05-29 2023-06-16 新电元工业株式会社 半导体模块
JP7091878B2 (ja) * 2018-06-22 2022-06-28 三菱電機株式会社 パワーモジュール、電力変換装置、及びパワーモジュールの製造方法
JP6457144B1 (ja) * 2018-09-19 2019-01-23 株式会社加藤電器製作所 半導体モジュール
JP7108567B2 (ja) 2019-03-20 2022-07-28 株式会社東芝 パワーモジュール
CN111627864B (zh) * 2020-06-03 2022-06-07 西安卫光科技有限公司 一种高结温SiC陶瓷封装硅堆外壳结构
JP7489933B2 (ja) 2021-02-24 2024-05-24 三菱電機株式会社 半導体装置及びその製造方法
CN117836928A (zh) * 2021-08-18 2024-04-05 三菱电机株式会社 半导体装置
JP7811033B2 (ja) * 2024-07-11 2026-02-04 大分デバイステクノロジー株式会社 パワー半導体デバイスの製造方法

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WO2013111276A1 (ja) * 2012-01-25 2013-08-01 三菱電機株式会社 電力用半導体装置

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CN110120375A (zh) 2019-08-13
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