CN113451225A - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

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Publication number
CN113451225A
CN113451225A CN202110295187.2A CN202110295187A CN113451225A CN 113451225 A CN113451225 A CN 113451225A CN 202110295187 A CN202110295187 A CN 202110295187A CN 113451225 A CN113451225 A CN 113451225A
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China
Prior art keywords
base plate
resin
case
adhesive
insulation layer
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CN202110295187.2A
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English (en)
Inventor
宫田俊彦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN113451225A publication Critical patent/CN113451225A/zh
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Abstract

提供能够确保绝缘性的功率半导体模块。在由电路图案(3a)、树脂绝缘层(3b)和基座板(3c)构成的树脂绝缘基座板(3)搭载有半导体元件(1)，将树脂绝缘基座板(3)包围的壳体(4)和树脂绝缘层(3b)通过粘接剂(5)而粘接。粘接剂(5)与封装树脂(8)为相同材料，填充于被在壳体(4)的树脂绝缘层(3b)这一侧形成的锥形部(4a)和树脂绝缘层(3b)包围的区域，将树脂绝缘层(3b)和壳体(4)粘接，粘接剂(5)中的气泡(9)配置于处在与树脂绝缘层(3b)相反侧的锥形部(4a)这一侧。

Description

功率半导体模块
技术领域
本发明涉及功率半导体模块。
背景技术
就以往的半导体装置而言，在壳体与基座板的上表面之间，通过具有厚的胶瘤形状的粘接剂而固定了基座板和壳体。(例如，参照专利文献1)
专利文献1：日本特开2019-96797号公报(第0013～0016段，图1～2)
但是，当使用在壳体内填充的封装树脂这样的粘度大的粘接剂的情况下，流动性下降，容易产生气泡，因此有时在绝缘基板之上绝缘不足。
发明内容
本发明就是为了解决上述这样的问题而提出的，其目的在于提供确保绝缘性的功率半导体模块。
本发明涉及的功率半导体模块具有：树脂绝缘基座板，其搭载有半导体元件；壳体，其将树脂绝缘基座板包围；封装树脂，其封装于被树脂绝缘基座板和壳体包围的区域；以及粘接剂，其将树脂绝缘基座板和壳体粘接，粘接剂被壳体和树脂绝缘基座板包围，填充于在壳体的树脂绝缘基座板这一侧形成的锥形部。
发明的效果
根据本发明涉及的功率半导体模块，能够在功率半导体模块内确保绝缘性。
附图说明
图1是表示实施方式1涉及的功率半导体模块的结构的剖视图。
图2是表示实施方式1涉及的功率半导体模块的变形例的剖视图。
图3是表示实施方式2涉及的功率半导体模块的结构的剖视图。
图4是表示实施方式3涉及的功率半导体模块的结构的剖视图。
具体实施方式
实施方式1.
一边使用附图，一边对实施方式1涉及的功率半导体模块的结构进行说明。图1是表示功率半导体模块的结构的剖视图。
以逆变器装置、加工装置、工业机器人等工业用途为首，功率半导体模块100得到广泛应用。如图1所示，功率半导体模块100由半导体元件1、树脂绝缘基座板3、壳体4、电极端子6、金属导线7、封装树脂8构成。壳体4与树脂绝缘基座板3在壳体4与树脂绝缘基座板3的树脂绝缘层3b之间通过粘接剂5而粘接、固定。
在树脂绝缘基座板3搭载有至少大于或等于1个半导体元件1。能够根据功率半导体模块100的规格而搭载所需个数的半导体元件1。
半导体元件1由Si构成，是对电力进行控制的所谓电力半导体元件。例如是IGBT(Insulated Gate Bipolar Transistor)、MOSFET(Metal Oxide Semiconductor FieldEffect Transistor)、FWD(Free Wheeling Diode)。半导体元件1的一边为3mm～15mm。此外，不限于是Si，也可以是诸如SiC或者GaN这样的宽带隙半导体的元件。
另外，半导体元件1经由接合材料2而搭载于树脂绝缘基座板3的电路图案3a。接合材料2是包含Sn的导电性金属，是所谓焊料。此外，由于半导体元件1发热，因此，接合材料2不限定于焊料，也可以是与焊料相比导热率大的具有散热性的烧结材料。
树脂绝缘基座板3由电路图案3a、树脂绝缘层3b和基座板3c层叠而构成。电路图案3a是包含Cu或者Al的任一者的导电性金属，例如，厚度为0.5mm左右。此外，电路图案3a的厚度根据电流密度、通电时的发热温度而设定。树脂绝缘层3b是填入了包含BN或者Al2O3的任一者的填料的环氧树脂，树脂绝缘层3b的厚度为0.1～0.2mm。基座板3c是包含Cu或者Al的任一者的导热率优异的金属，厚度为1～5mm。树脂绝缘基座板3的导热率为6～18W/(m·K)，根据功率半导体模块100所需的散热规格而区分使用。
壳体4包含PPS(Poly Phenylene Sulfide)树脂或者PBT(Poly ButyleneTerephthalate)树脂的任一者。
电极端子6与壳体4一起嵌入成型，被埋入于壳体4内。如图1所示，电极端子6弯折，为了与外部进行电输入输出，电极端子6的一个前端部从壳体4凸出而延伸。电极端子6的另一个前端部在壳体4的内侧以平坦面状露出。
如图1所示，半导体元件1、电路图案3a以及电极端子6通过金属导线7而电连接。金属导线7是包含Al或者Cu的任一者的材料。金属导线7的直径为0.1～0.5mm。此外，不限定于线形状，也可以使用能够应对大电流的板形状的带导线而进行连接。
将封装树脂8填充于被树脂绝缘基座板3的搭载有半导体元件1这一侧的面和壳体4包围的区域而进行封装。封装树脂8具有热固性，是填入了包含SiO2的填料的环氧树脂，但不限定于此，只要是具有所需的弹性模量、导热率、耐热性、绝缘性以及粘接性的树脂即可。例如，除了环氧树脂以外，也可以是硅树脂、酚醛树脂、聚酰亚胺树脂等。
通过粘接剂5将树脂绝缘层3b与壳体4粘接、固定。由此，能够在将封装树脂8填充于被壳体4包围的区域时，防止封装树脂8泄漏。粘接剂5与封装树脂8为相同材料。
如图1所示，在壳体4的树脂绝缘基座板3这一侧形成有锥形部4a。在被树脂绝缘层3b和壳体4包围的区域填充有粘接剂5，将树脂绝缘层3b与壳体4粘接。有时由于填充粘接剂5时的空气的卷入，产生气泡9。另外，有时在填充了粘接剂5之后，在为了使粘接剂5固化而进行加热时，产生气泡9，或者在粘接剂5中分散存在且肉眼不可见的细微的气泡9发生聚集，由此有时会形成对绝缘性产生影响的尺寸的气泡9。特别地，由于粘接剂5与封装树脂8为相同材料，因此粘度大至20～60Pa·S，因此，在向树脂绝缘层3b与壳体4之间这样狭窄的区域填充粘接剂5的情况下，流动性下降，容易产生气泡9。此外，封装树脂8填充的区域大，图1的纸面上的上侧大幅度地开放，因此气泡9不易残存。
如果气泡9与树脂绝缘层3b接触，则在电路图案3a与基座板3c之间，沿面距离不足，绝缘不足。为了抑制这种情况，在被粘接剂5粘接的壳体4的下侧(在图1的纸面上为下侧)，设置在图1的纸面上朝向上侧而具有锥形形状的锥形部4a，向该锥形部4a填充粘接剂5，由此，使气泡9的配置位置尽量远离树脂绝缘层3b。由于所产生的气泡9在粘接剂5之中在图1的纸面上试图向上侧移动，因而能够使粘接剂5中的气泡9上浮，使气泡9配置并停留于在图1的纸面上朝向上侧而呈锥形形状的锥形部4a。此外，就锥形部4a的高度而言，从树脂绝缘层3b起为0.5～2mm。另外，气泡9的尺寸最大为0.1mm左右。
这样，在壳体4设置锥形部4a，通过粘接剂5将壳体4与树脂绝缘层3b粘接，由此能够避免粘接剂5中的气泡9与树脂绝缘层3b接触。因此，在电路图案3a与基座板3c之间，不会发生沿面距离不足这一情况，作为功率半导体模块100，能够确保绝缘性。
在实施方式1中，在由电路图案3a、树脂绝缘层3b和基座板3c构成的树脂绝缘基座板3搭载有半导体元件1。将树脂绝缘基座板3包围的壳体4和树脂绝缘层3b通过粘接剂5而粘接。封装树脂8封装于被壳体4和树脂绝缘基座板3包围的区域。上述粘接剂5与上述封装树脂8为相同材料，填充于被在壳体4的树脂绝缘层3b这一侧形成的锥形部4a和树脂绝缘层3b包围的区域，将树脂绝缘层3b和壳体4粘接。粘接剂5中的气泡9不与树脂绝缘层3b接触，而是被配置于位于与树脂绝缘层3b相反侧的锥形部4a这一侧。通过设为以上这样的结构，从而在电路图案3a和基座板3c之间，不会发生沿面距离不足这一情况，作为功率半导体模块100，能够确保绝缘性。
另外，针对壳体4，通过设为锥形部4a的形状而非长方体，从而能够减少粘接剂5的填充量。
此外，由于树脂绝缘层3b与壳体4接触，因此，粘接剂5被密闭困住，但不限定于此，也可以在树脂绝缘层3b的电路图案3a这一侧的面和壳体4之间，存在不会使粘接剂5流过的程度的间隙。根据填料的尺寸，优选间隙小于或等于0.2mm。
另外，就电路图案3a或者基座板3c的露出的面而言，出于外观上的美观、焊料接合性的提高或者树脂绝缘基座板3的保管/管理性的考虑，也可以进行镀Ni。
另外，虽然未图示，但也可以在封装树脂8的上侧(在图1的纸面上为上侧)设置盖。
另外，图2示出功率半导体模块100的变形例。在壳体4的树脂绝缘层3b这一侧形成有山型形状延续的2个呈锥形形状的锥形部4a。在被壳体4的锥形部4a和树脂绝缘层3b包围的区域填充粘接剂5，将壳体4和树脂绝缘层3b粘接、固定。由此，粘接剂5中的气泡9不与树脂绝缘层3b接触，而是被分散于锥形部4a这一侧。在气泡9多的情况下，其效果变得显著。因此，在电路图案3a和基座板3c之间，不会发生沿面距离不足这一情况，作为功率半导体模块100，能够确保绝缘性。另外，通过锚固效应，能够实现粘接剂5和壳体4之间的粘接强度的提高。
此外，在壳体4设置的锥形部4a的形状不限定于图1以及图2所示的形状，只要是锥形形状，就能够得到同样的效果。
实施方式2.
图3是表示实施方式2涉及的功率半导体模块的结构的剖视图。此外，本实施方式中的功率半导体模块100的多数结构与实施方式1共通。因此，对与实施方式1的不同点进行说明，并且，对相同或者相应的结构标注相同的标号而示出，省略其说明。如图3所示，与实施方式1的不同点在于，基座板3c的外周面露出这一结构、树脂绝缘基座板3和壳体4之间的粘接结构。
如图3所示，基座板3c的搭载有半导体元件1这一侧的外周面没有树脂绝缘层3b，而是露出的。此外，树脂绝缘层3b的长度是在电路图案3a和基座板3c之间满足沿面距离的长度。
在壳体4的树脂绝缘基座板3这一侧形成有锥形部4a。在被树脂绝缘层3b以及基座板3c、壳体4包围的区域填充粘接剂5，将基座板3c、树脂绝缘层3b、壳体4粘接。
在基座板3c的外周的侧面和壳体4之间设置间隙，粘接剂5露出，以使得在粘接时或者进行加热固化时，粘接剂5中的气泡9容易从粘接剂5排出。此外，粘接剂5没有流动、填充至基座板3c的与树脂绝缘层3b相反侧的面。
这样，通过在基座板3c的外周的侧面和壳体4之间设置间隙，粘接剂5露出，从而粘接剂5中的气泡9容易排出。另外，在壳体4设置锥形部4a，通过粘接剂5将壳体4、树脂绝缘层3b、基座板3c粘接，由此能够避免粘接剂5中的气泡9与树脂绝缘层3b接触。因此，在电路图案3a和基座板3c之间，不会发生沿面距离不足这一情况，作为功率半导体模块100，能够确保绝缘性。
在实施方式2中，树脂绝缘基座板3由电路图案3a、树脂绝缘层3b和基座板3c构成，基座板3c的搭载有半导体元件1这一侧的外周面没有树脂绝缘层3b，而是露出的。在电路图案3a搭载有半导体元件1。将树脂绝缘基座板3包围的壳体4和树脂绝缘层3b通过粘接剂5而粘接。封装树脂8封装于被壳体4和树脂绝缘基座板3包围的区域。上述粘接剂5与上述封装树脂8为相同材料，填充于被在壳体4的树脂绝缘层3b这一侧形成的锥形部4a和树脂绝缘层3b以及基座板3c包围的区域，将树脂绝缘层3b以及基座板3c与壳体4粘接。粘接剂5中的气泡9不与树脂绝缘层3b接触，而是配置于处在与树脂绝缘层3b相反侧的锥形部4a这一侧。另外，为了使得粘接剂5中的气泡9容易排出，在基座板3c的外周的侧面和壳体4之间设置间隙，粘接剂5露出。通过设为以上这样的结构，从而在电路图案3a和基座板3c之间，不会发生沿面距离不足这一情况，作为功率半导体模块100，能够确保绝缘性。
另外，就功率半导体模块100而言，有时由于诸如高温以及低温这样的使用环境条件和翘曲的影响，在树脂绝缘层3b和基座板3c的端部产生应力以及变形，树脂绝缘层3b从基座板3c剥离。但是，通过粘接剂5而将树脂绝缘层3b和基座板3c粘接、固定，因而能够抑制树脂绝缘层3b从基座板3c的剥离。因此，作为功率半导体模块100，能够确保绝缘性。
实施方式3.
图4是表示实施方式3涉及的功率半导体模块的结构的剖视图。此外，本实施方式中的功率半导体模块100的多数结构与实施方式1共通。因此，对与实施方式1的不同点进行说明，并且，对相同或者相应的结构标注相同的标号而示出，省略其说明。如图4所示，与实施方式1的不同点在于，基座板3c的外周面露出这一结构、树脂绝缘基座板3和壳体4之间的粘接结构、以及基座板3c的形状。
如图4所示，基座板3c的搭载有半导体元件1这一侧的外周面没有树脂绝缘层3b，而是露出的。此外，树脂绝缘层3b的长度是在电路图案3a和基座板3c之间满足沿面距离的长度。
在壳体4的树脂绝缘基座板3这一侧形成有锥形部4a。在被树脂绝缘层3b以及基座板3c、壳体4包围的区域填充有粘接剂5，将基座板3c、树脂绝缘层3b、壳体4粘接。
在基座板3c的外周的侧面和壳体4之间设置间隙，粘接剂5露出，以使得在粘接时或者进行加热固化时，粘接剂5中的气泡9容易从粘接剂5排出。此外，粘接剂5没有流动、填充至基座板3c的与树脂绝缘层3b相反侧的面。
粘接剂5存在以下倾向，即，相比于树脂绝缘层3b以及壳体4，与基座板3c之间的粘接性小。通过如图4所示，在基座板3c的搭载有半导体元件1这一侧的两端设置台阶，从而由于锚固效应，能够实现基座板3c和粘接剂5之间的粘接力的提高。
这样，在基座板3c的外周的侧面和壳体4之间设置间隙，粘接剂5露出，由此，粘接剂5中的气泡9变得容易排出。另外，在壳体4设置锥形部4a，通过粘接剂5而将壳体4、树脂绝缘层3b、基座板3c粘接，由此能够避免粘接剂5中的气泡9与树脂绝缘层3b接触。因此，在电路图案3a和基座板3c之间，不会发生沿面距离不足这一情况，作为功率半导体模块100，能够确保绝缘性。
在实施方式3中，树脂绝缘基座板3由电路图案3a、树脂绝缘层3b和基座板3c构成，基座板3c的搭载有半导体元件1这一侧的外周面没有树脂绝缘层3b，而是露出的。另外，在基座板3c的搭载有半导体元件1这一侧的两端设置有台阶。在电路图案3a搭载有半导体元件1。将树脂绝缘基座板3包围的壳体4和树脂绝缘层3b通过粘接剂5而粘接。封装树脂8封装于被壳体4和树脂绝缘基座板3包围的区域。上述粘接剂5与上述封装树脂8为相同材料，填充于被在壳体4的树脂绝缘层3b这一侧形成的锥形部4a和树脂绝缘层3b以及基座板3c包围的区域，将树脂绝缘层3b以及基座板3c与壳体4粘接。粘接剂5中的气泡9不与树脂绝缘层3b接触，而是被配置于处在与树脂绝缘层3b相反侧的锥形部4a这一侧。另外，为了使得粘接剂5中的气泡9容易排出，在基座板3c的外周的侧面和壳体4之间设置间隙，粘接剂5露出。通过设为以上这样的结构，从而在电路图案3a和基座板3c之间，不会发生沿面距离不足这一情况，作为功率半导体模块100，能够确保绝缘性。
另外，就功率半导体模块100而言，有时由于诸如高温以及低温这样的使用环境条件和翘曲的影响，在树脂绝缘层3b和基座板3c的端部产生应力以及变形，树脂绝缘层3b从基座板3c剥离。但是，通过粘接剂5而将树脂绝缘层3b和基座板3c粘接、固定，因而，能够抑制树脂绝缘层3b从基座板3c的剥离。因此，作为功率半导体模块100，能够确保绝缘性。
另外，粘接剂5存在以下倾向，即，相比于树脂绝缘层3b以及壳体4，与基座板3c之间的粘接性小。即使在这样的情况下，通过如图4所示，在基座板3c的两端设置台阶，从而由于锚固效应，能够实现基座板3c和粘接剂5之间的粘接力的提高。
此外，能够对各实施方式自由地进行组合，对各实施方式适当进行变形、省略。

Claims (6)

1.一种功率半导体模块，其具有：
半导体元件；
树脂绝缘基座板，其搭载有所述半导体元件；
壳体，其将所述树脂绝缘基座板包围；
封装树脂，其封装于被所述树脂绝缘基座板和所述壳体包围的区域；以及
粘接剂，其将所述树脂绝缘基座板和所述壳体粘接，该粘接剂被所述树脂绝缘基座板和所述壳体包围，填充于在所述壳体的所述树脂绝缘基座板这一侧形成的锥形部。
2.根据权利要求1所述的功率半导体模块，其中，
所述树脂绝缘基座板由电路图案、树脂绝缘层和基座板构成。
3.根据权利要求1或2所述的功率半导体模块，其中，
所述粘接剂与所述封装树脂为相同材料。
4.根据权利要求1至3中任一项所述的功率半导体模块，其中，
在所述树脂绝缘基座板的外周的侧面和所述壳体之间，所述粘接剂露出。
5.根据权利要求1至4中任一项所述的功率半导体模块，其中，
所述基座板的搭载有所述半导体元件这一侧的外周面露出。
6.根据权利要求1至5中任一项所述的功率半导体模块，其中，
所述基座板在搭载有所述半导体元件这一侧的侧面设置有台阶。
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