JP6841199B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6841199B2 JP6841199B2 JP2017190984A JP2017190984A JP6841199B2 JP 6841199 B2 JP6841199 B2 JP 6841199B2 JP 2017190984 A JP2017190984 A JP 2017190984A JP 2017190984 A JP2017190984 A JP 2017190984A JP 6841199 B2 JP6841199 B2 JP 6841199B2
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- Japan
- Prior art keywords
- case
- terminal portion
- semiconductor device
- internal terminal
- bent
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Description
まず、本発明の実施の形態1に係る半導体装置100の構成を説明する。図1は、本発明の実施の形態1〜3に係る半導体装置の構成図である。図2は、図1に記載のX−X線で切断された断面図であり、実施の形態1に係る半導体装置100の断面図である。
図1と図2において、半導体装置に充填される封止材及び任意で設けられる蓋は、省略しており、図3以降の図面に関しても同様に省略する。
図4は、本発明の実施の形態2に係る半導体装置200の断面図である。図4(b)は図4(a)に記載の要部周辺の拡大図である。実施の形態1に係る半導体装置100では、内部端子部8に設けられるアンカー部が、断面が矩形を呈する凹みからなる凹部8bにて構成されたことに対して、実施の形態2に係る半導体装置200では、アンカー部が、断面が台形を呈する凹みからなる凹部8bにて構成される。なお、本発明の実施の形態2では、本発明の実施の形態1と同一または対応する部分についての説明は、省略している。
図6は、本発明の実施の形態3に係る半導体装置の要部の断面図である。図6(b)は図6(a)に記載のA−A線で切断された断面図を示す。実施の形態1では、内部端子部8に設けられる凹部8bが、内部端子部8の伸長方向に並列、または、伸長方向に直列に形成されるが、本発明の実施の形態に係る半導体装置300においては、図6(b)に示すように格子状に凹部8bが設けられる。なお、本発明の実施の形態3では、本発明の実施の形態1と同一または対応する部分についての説明は省略する。
図7は、本発明の実施の形態4に係る半導体装置400の断面図である。また、図7は図1に記載のX−X線で切断された断面図である。この実施の形態4に係る半導体装置400は、実施の形態1では、内部端子部8のケース5と接する面に設けられるアンカー部を凹部8bとしたことに対して、実施の形態4に係る半導体装置400では、内部端子部8の伸長方向に、屈曲により形成される第一の屈曲部8cが、アンカー部として機能する。第一の屈曲部8cは前述の端子加工工程にて設けられる。なお、本発明の実施の形態4では、本発明の実施の形態1と同一または対応する部分についての説明は省略する。
図9は、本発明の実施の形態5に係る半導体装置500の断面図である。また、図9は図1に記載のX−X線で切断された断面図である。実施の形態4に係る半導体装置が、内部端子部8に第一の屈曲部8cを有することに対して、本発明の実施の形態5に係る半導体装置500では、内部端子部8に第一の屈曲部8cに加えてさらに第二の屈曲部8dを有する。本発明の実施の形態5では、本発明の実施の形態4と同一または対応する部分についての説明は省略する。
図10は、本発明の実施の形態6に係る半導体装置の要部の断面図である。また図10(b)は図10(a)に記載のB−B線で切断された断面図を示す。本発明の実施の形態に係る半導体装置は、実施の形態4に係る半導体装置の第一の屈曲部8cに貫通孔8fが形成された構造である。なお、本発明の実施の形態6では、本発明の実施の形態4と同一または対応する部分についての説明は、省略している。
図11は、本発明の実施の形態7に係る半導体装置の断面図である。また、図11は図1に記載のY−Y線の断面図であり、図12は要部周辺の斜視図である。実施の形態7に係る半導体装置は、実施の形態4と同様に屈曲部にてアンカー部を形成するが、実施の形態4とは屈曲部を形成する位置が異なり、実施の形態5では内部端子部8の側面側に屈曲部が設けられる。なお、本発明の実施の形態7では、本発明の実施の形態4と同一または対応する部分についての説明は、省略している。
また、側面屈曲部8gは、ボンディング領域8aとは異なる面に設けられるため、ボンディング領域8aを縮小させない。
図17は、本発明の実施の形態8に係る半導体装置800の要部の断面図である。本発明の実施の形態に係る半導体装置800は、実施の形態7に係る半導体装置の側面屈曲部8gに貫通孔8fが形成された構造である。なお、本発明の実施の形態8では、本発明の実施の形態7と同一または対応する部分についての説明は省略する。
1a 放熱板
1b 絶縁層
1c 電気回路パターン
2 はんだ
3 半導体素子
4 接着材
5 ケース
6 インサート端子
7 外部端子部
7a 固定部
7b 外部接続部
8 内部端子部
8a ボンディング領域
8b 凹部
8c 第一の屈曲部
8d 第二の屈曲部
8e 端面
8f 貫通孔
8g 側面屈曲部
9 ボンディングワイヤ
100 半導体装置
200 半導体装置
400 半導体装置
500 半導体装置
Claims (6)
- 樹脂からなるケースと、
前記ケースに組込まれ、一端が前記ケースから露出する外部端子部と、前記外部端子部の他端に対してL字形状に折り曲げられ、一面が前記ケースから露出しており、前記ケースと密着するアンカー部が一部をなす内部端子部と、を有するインサート端子と、
前記内部端子部の前記一面に接合されたボンディングワイヤと、を備え、
前記内部端子部は、前記内部端子部の一端が前記外部端子部の他端と繋がっており、前記ボンディングワイヤが接合された前記一面よりも前記内部端子部の他端側に第一の屈曲部を有し、
前記第一の屈曲部は、前記ボンディングワイヤが接合された前記一面との間の角度γが15°≦γ<90°である半導体装置。 - 樹脂からなるケースと、
前記ケースに組込まれ、一端が前記ケースから露出する外部端子部と、前記外部端子部の他端に対してL字形状に折り曲げられ、一面が前記ケースから露出しており、前記ケースと密着するアンカー部が一部をなす内部端子部と、を有するインサート端子と、
前記内部端子部の前記一面に接合されたボンディングワイヤと、を備え、
前記内部端子部は、前記内部端子部の一端が前記外部端子部の他端と繋がっており、ボンディングワイヤが接合された前記一面よりも前記内部端子部の前記一端の伸長方向に設けられた他端側に前記ケース側に折り曲げられた第一の屈曲部と、前記第一の屈曲部よりも前記内部端子部の他端側に前記内部端子部の前記一端側に折り曲げられ前記ケースに埋設した第二の屈曲部とを有し、
前記第二の屈曲部は、前記ボンディングワイヤが接合された前記一面に対して垂直な方向で重なる方向に屈曲して設けられた半導体装置。 - 前記第一の屈曲部に貫通孔を有し、前記貫通孔には前記ケースを構成する樹脂が充填されていることを特徴とする請求項1または2に記載の半導体装置。
- 樹脂からなるケースと、
前記ケースに組込まれ、一端が前記ケースから露出する外部端子部と、前記外部端子部の他端に対してL字形状に折り曲げられ、一面が前記ケースから露出しており、前記ケースと密着するアンカー部が一部をなす内部端子部と、を有するインサート端子と、
前記内部端子部の前記一面に接合されたボンディングワイヤと、を備え、
前記アンカー部が、前記ボンディングワイヤを接合する前記一面の側面側を折り曲げて設けられ、前記ケースに埋設する側面屈曲部からなり、
前記側面屈曲部は、前記ボンディングワイヤが接合された前記一面との間の角度εが30°≦ε<90°である半導体装置。 - 前記側面屈曲部が貫通孔を有し、前記貫通孔には前記ケースを構成する樹脂が充填されていることを特徴とする請求項4に記載の半導体装置。
- 前記ケース内に、SiCからなる半導体素子をさらに有することを特徴とする請求項1〜5のいずれか1項に記載の半導体装置。
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JPS6331147A (ja) * | 1986-07-24 | 1988-02-09 | Nec Corp | 半導体装置のリ−ドフレ−ム |
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JPH04359550A (ja) | 1991-06-06 | 1992-12-11 | Mitsubishi Electric Corp | 半導体装置 |
JPH09107059A (ja) * | 1995-10-11 | 1997-04-22 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3505908B2 (ja) * | 1996-03-15 | 2004-03-15 | アイシン・エィ・ダブリュ株式会社 | 導電ワイヤ接続端子 |
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JP3681922B2 (ja) * | 1999-06-03 | 2005-08-10 | 三菱電機株式会社 | 引き出し端子、電力用半導体装置用ケース及び電力用半導体装置 |
JP4141789B2 (ja) * | 2002-10-11 | 2008-08-27 | 三菱電機株式会社 | 電力用半導体装置 |
JP2005327946A (ja) | 2004-05-17 | 2005-11-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2009107059A (ja) * | 2007-10-30 | 2009-05-21 | Kyocera Corp | 切削工具および切削インサート並びに切削インサートの製造方法 |
JP5383621B2 (ja) * | 2010-10-20 | 2014-01-08 | 三菱電機株式会社 | パワー半導体装置 |
JP2015023211A (ja) * | 2013-07-22 | 2015-02-02 | ローム株式会社 | パワーモジュールおよびその製造方法 |
JP6413709B2 (ja) * | 2014-12-02 | 2018-10-31 | 富士電機株式会社 | 半導体装置およびその製造方法 |
CN107427968B (zh) * | 2015-09-17 | 2020-11-24 | 富士电机株式会社 | 半导体装置用软钎焊材料 |
JP2017190984A (ja) | 2016-04-12 | 2017-10-19 | 株式会社大林組 | 位置推定システム、位置推定方法及び位置推定プログラム |
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