JP6150855B2 - 集積化センサの配列 - Google Patents
集積化センサの配列 Download PDFInfo
- Publication number
- JP6150855B2 JP6150855B2 JP2015157901A JP2015157901A JP6150855B2 JP 6150855 B2 JP6150855 B2 JP 6150855B2 JP 2015157901 A JP2015157901 A JP 2015157901A JP 2015157901 A JP2015157901 A JP 2015157901A JP 6150855 B2 JP6150855 B2 JP 6150855B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- magnetic field
- integrated circuit
- field sensing
- hall effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 367
- 230000005355 Hall effect Effects 0.000 claims description 68
- 239000004020 conductor Substances 0.000 claims description 64
- 230000035945 sensitivity Effects 0.000 claims description 29
- 230000004044 response Effects 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 6
- -1 InGaAsP Inorganic materials 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 34
- 230000004907 flux Effects 0.000 description 25
- 229910000679 solder Inorganic materials 0.000 description 20
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- 230000008878 coupling Effects 0.000 description 17
- 238000010168 coupling process Methods 0.000 description 17
- 238000005859 coupling reaction Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000008859 change Effects 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000011162 core material Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/207—Constructional details independent of the type of device used
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/08—Circuits for altering the measuring range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
2の基板の第2の表面から遠位にあるように、第1の基板と第2の基板は結合されている。本集積回路は、また、第1の基板の第1の表面に配置された電子部品と、第2の基板の第1の表面に配置された磁界感知素子と、を含んでいる。
る。ホール効果素子は、横型または縦型であってもよい。磁気抵抗素子は、巨大磁気抵抗(GMR)素子、異方性磁気抵抗(AMR)素子、およびトンネル磁気抵抗(TMR)素子を含むがこれらに限定されない型のものとすることができる。
またはインダクタ、および能動電子部品、例えばトランジスタ、増幅器、または他の集積回路を含むことができるが、これらに限定されない。
がって、その応力および歪みを減少させる。応力および歪みをさらに減少させるために、いくつかの実施形態では、集積回路10は、第1の基板14の第1の表面14aと第2の基板26の第1の表面26aの間に配置された下充填材料42を含むことがある。下充填材料は、パッケージ材料、例えばプラスチックが磁界感知素子30に接触しないようにする傾向があり、磁界感知素子30および第2の基板26に対する応力および歪みのさらなる減少をもたらす。
y)から成ってもよい。
いて示されており、集積回路50は、図1および図1Aの集積回路10と同様な態様を含むが、図1および図1Aのフリップチップ配列がない。
、第1および第2の磁界感知素子70、58に近接して磁界の増大をもたらし、さらに磁界、例えば導体中の電流に起因する磁界に対する第1および第2の磁界感知素子70、58の対応する感度向上をもたらすことができる。
aAs、InGaAsP、SiGe、セラミック、またはガラスを含むがこれらに限定されない様々な材料をそれぞれ含んでもよい。第1および第2の基板114、104は、それぞれ、同じ材料を含んでもよく、または異なる材料を含んでもよい。1つの特定の実施形態では、第1の基板114はシリコン(Si)から成り、第2の基板104はガリウム砒素(GaAs)から成る。
24a〜124cが代表している。接合ワイヤ126a〜126cは、第1の基板114をリードフレーム102のリード(図示されない)に結合することができる。
し、集積回路150が、4よりも多いまたは4よりも少ないそのような結合部を備えることができることは、理解されるであろう。
の基板156、166の1つの抵抗率変化を検出するためにそれぞれ使用される。
の磁界感知素子218を備える実施形態では、いくつかの配列において、第2の磁界感知素子218は、第1の磁界感知素子208に比べて、磁界(すなわち、電流)に対して異なる感度を有することができる。したがって、これらの配列では、集積回路200は、1つよりも多い「範囲」すなわち拡張された範囲を有することができる。これらの配列では、集積回路200は、より広い範囲の感知電流、すなわち磁界強度にわたって動作することができる。
定電流および磁束集束器260によって与えられる所望の磁気遮蔽量のような要素に基づいて選ばれる。他の要素には、ある温度にわたっての比透磁率の安定性およびヒステリシス(磁性体残留磁気)がある。例えば、低ヒステリシスは、導体258を通過する小電流に対してより高い精度を保証する。磁束集束器260の材料および大きさは、また、導体258を通過する所望のフルスケール電流に従って選ばれ、飽和磁束密度(Bsat)のより大きな磁気コア材料が、導体258を流れる所定電流に対してより小さなコアを使用することを可能にする。理解されることであろうが、磁束集束器260を使用することは、集積回路の磁化率を漂遊磁界まで大きく減少させる。
Cookson Electronics Equipment, New Jersey)の層を含んでいる。そのような配列は、基板306とリードフレーム302の間に1000ボルト超の絶縁を実現する。
ミー半田ボールを含んで任意の数の半田ボールが設けられてもよい。また、半田ボール320a〜320eが示されたが、また、金バンプ、共晶または高鉛半田バンプ、無鉛半田バンプ、金スタッドバンプ、重合体導電バンプ、異方性導電ペースト、導電膜、およびワイヤ接合部を含むが、これらに限定されない他の接続方法も使用されてもよい。
C. Doogue、Vijay MangtaniおよびWilliam P. Taylorで代理人整理番号ALLEG−039CUSである、「Current Sens
or」という名称の2006年1月20日に出願された米国特許出願第11/336,602号に記載された回路から成ってもよく、この出願は、これに言及することによりその全体が参考として組み込まれている。
Claims (3)
- 第1の基板(306)と、
前記第1の基板(306)の表面に配置された回路素子と、
前記第1の基板(306)の表面に配置された縦型ホール効果素子(308)であって、磁界に対して第1の感度を有する前記縦型ホール効果素子(308)と、
前記第1の基板(306)に結合された第2の基板(307)であって、該第2の基板(307)の主表面に直交する方向がz軸(324)方向である前記第2の基板(307)と、
前記第2の基板(307)の表面に配置された横型ホール効果素子(309)であって、磁界に対して第2の異なる感度を有する前記横型ホール効果素子(309)と、を備えている集積回路であり、
該集積回路は、前記横型ホール効果素子(309)に応じた第1の動作範囲と、前記縦型ホール効果素子(308)に応じた第2の異なる動作範囲、を有し、且つ前記横型ホール効果素子(309)はz軸方向に最大の応答軸を有し、且つ前記縦型ホール効果素子(308)は前記z軸方向とは異なる他の方向に最大応答軸を有する、集積回路。 - 請求項1に記載の集積回路において、前記第1の基板が、Si、GaAs、InP、InSb、InGaAs、InGaAsP、SiGe、セラミック、またはガラスのうちから選択された1つを含んでおり、前記第2の基板が、Si、GaAs、InP、InSb、InGaAs、InGaAsP、SiGe、セラミック、またはガラスのうちから選択された1つを含んでいる、集積回路。
- 請求項1に記載の集積回路において、電流導体部分(304)を備えており、前記横型ホール効果素子(309)と前記縦型ホール効果素子(308)とが、該電流導体部分(304)によって流される電流(316)によって発生される磁界に反応するようになされている、集積回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/335,944 US7768083B2 (en) | 2006-01-20 | 2006-01-20 | Arrangements for an integrated sensor |
US11/335,944 | 2006-01-20 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013189638A Division JP5902657B2 (ja) | 2006-01-20 | 2013-09-12 | 集積化センサの配列 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016001186A JP2016001186A (ja) | 2016-01-07 |
JP2016001186A5 JP2016001186A5 (ja) | 2017-02-09 |
JP6150855B2 true JP6150855B2 (ja) | 2017-06-21 |
Family
ID=38194995
Family Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008551281A Active JP5748393B2 (ja) | 2006-01-20 | 2007-01-04 | 集積化センサの配列 |
JP2011264267A Active JP5635966B2 (ja) | 2006-01-20 | 2011-12-02 | 集積化センサの配列 |
JP2013085409A Withdrawn JP2013178259A (ja) | 2006-01-20 | 2013-04-16 | 集積化センサの配列 |
JP2013189638A Active JP5902657B2 (ja) | 2006-01-20 | 2013-09-12 | 集積化センサの配列 |
JP2014028213A Active JP5848382B2 (ja) | 2006-01-20 | 2014-02-18 | 集積化センサの配列 |
JP2015045607A Active JP6376995B2 (ja) | 2006-01-20 | 2015-03-09 | 集積化センサの配列 |
JP2015157901A Active JP6150855B2 (ja) | 2006-01-20 | 2015-08-10 | 集積化センサの配列 |
JP2017173831A Pending JP2018036267A (ja) | 2006-01-20 | 2017-09-11 | 集積化センサの配列 |
Family Applications Before (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008551281A Active JP5748393B2 (ja) | 2006-01-20 | 2007-01-04 | 集積化センサの配列 |
JP2011264267A Active JP5635966B2 (ja) | 2006-01-20 | 2011-12-02 | 集積化センサの配列 |
JP2013085409A Withdrawn JP2013178259A (ja) | 2006-01-20 | 2013-04-16 | 集積化センサの配列 |
JP2013189638A Active JP5902657B2 (ja) | 2006-01-20 | 2013-09-12 | 集積化センサの配列 |
JP2014028213A Active JP5848382B2 (ja) | 2006-01-20 | 2014-02-18 | 集積化センサの配列 |
JP2015045607A Active JP6376995B2 (ja) | 2006-01-20 | 2015-03-09 | 集積化センサの配列 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017173831A Pending JP2018036267A (ja) | 2006-01-20 | 2017-09-11 | 集積化センサの配列 |
Country Status (6)
Country | Link |
---|---|
US (6) | US7768083B2 (ja) |
EP (4) | EP2290380B1 (ja) |
JP (8) | JP5748393B2 (ja) |
KR (1) | KR101366007B1 (ja) |
AT (4) | ATE550672T1 (ja) |
WO (1) | WO2007087121A2 (ja) |
Families Citing this family (146)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7259545B2 (en) * | 2003-02-11 | 2007-08-21 | Allegro Microsystems, Inc. | Integrated sensor |
US7768083B2 (en) * | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
US7687882B2 (en) * | 2006-04-14 | 2010-03-30 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor |
US7573112B2 (en) * | 2006-04-14 | 2009-08-11 | Allegro Microsystems, Inc. | Methods and apparatus for sensor having capacitor on chip |
US20070279053A1 (en) * | 2006-05-12 | 2007-12-06 | Taylor William P | Integrated current sensor |
US20080013298A1 (en) | 2006-07-14 | 2008-01-17 | Nirmal Sharma | Methods and apparatus for passive attachment of components for integrated circuits |
US7816772B2 (en) * | 2007-03-29 | 2010-10-19 | Allegro Microsystems, Inc. | Methods and apparatus for multi-stage molding of integrated circuit package |
US7564237B2 (en) * | 2007-10-23 | 2009-07-21 | Honeywell International Inc. | Integrated 3-axis field sensor and fabrication methods |
US8009442B2 (en) * | 2007-12-28 | 2011-08-30 | Intel Corporation | Directing the flow of underfill materials using magnetic particles |
US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
US7816905B2 (en) * | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
US8093670B2 (en) | 2008-07-24 | 2012-01-10 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions |
US20100052424A1 (en) * | 2008-08-26 | 2010-03-04 | Taylor William P | Methods and apparatus for integrated circuit having integrated energy storage device |
US8486755B2 (en) | 2008-12-05 | 2013-07-16 | Allegro Microsystems, Llc | Magnetic field sensors and methods for fabricating the magnetic field sensors |
US9222992B2 (en) | 2008-12-18 | 2015-12-29 | Infineon Technologies Ag | Magnetic field current sensors |
US20100188078A1 (en) * | 2009-01-28 | 2010-07-29 | Andrea Foletto | Magnetic sensor with concentrator for increased sensing range |
US20100193906A1 (en) * | 2009-02-05 | 2010-08-05 | Northern Lights Semiconductor Corp. | Integrated Circuit Package for Magnetic Capacitor |
US20110133732A1 (en) * | 2009-12-03 | 2011-06-09 | Allegro Microsystems, Inc. | Methods and apparatus for enhanced frequency response of magnetic sensors |
US20110210956A1 (en) * | 2010-02-26 | 2011-09-01 | Dev Alok Girdhar | Current sensor for a semiconductor device and system |
US8384183B2 (en) * | 2010-02-19 | 2013-02-26 | Allegro Microsystems, Inc. | Integrated hall effect element having a germanium hall plate |
US20110210411A1 (en) * | 2010-02-26 | 2011-09-01 | Sound Design Technologies, Ltd. | Ultra thin flip-chip backside device sensor package |
JP5067676B2 (ja) * | 2010-03-12 | 2012-11-07 | 株式会社デンソー | センサユニット及び、集磁モジュール |
US8760149B2 (en) | 2010-04-08 | 2014-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
US20120007597A1 (en) * | 2010-07-09 | 2012-01-12 | Invensense, Inc. | Micromachined offset reduction structures for magnetic field sensing |
EP2598896B1 (fr) * | 2010-07-30 | 2014-10-29 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Capteur integre de mesure de tension ou de courant a base de magnetoresistances |
DE102010047128A1 (de) * | 2010-09-30 | 2012-04-05 | Infineon Technologies Ag | Hallsensoranordnung zum redundanten Messen eines Magnetfeldes |
US8339134B2 (en) * | 2010-10-08 | 2012-12-25 | Allegro Microsystems, Inc. | Apparatus and method for reducing a transient signal in a magnetic field sensor |
JP5794777B2 (ja) | 2010-12-22 | 2015-10-14 | 三菱電機株式会社 | 半導体装置 |
US8975889B2 (en) | 2011-01-24 | 2015-03-10 | Infineon Technologies Ag | Current difference sensors, systems and methods |
US8963536B2 (en) | 2011-04-14 | 2015-02-24 | Infineon Technologies Ag | Current sensors, systems and methods for sensing current in a conductor |
US8907437B2 (en) | 2011-07-22 | 2014-12-09 | Allegro Microsystems, Llc | Reinforced isolation for current sensor with magnetic field transducer |
US8952686B2 (en) | 2011-10-25 | 2015-02-10 | Honeywell International Inc. | High current range magnetoresistive-based current sensor |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US8791533B2 (en) * | 2012-01-30 | 2014-07-29 | Broadcom Corporation | Semiconductor package having an interposer configured for magnetic signaling |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9812588B2 (en) * | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
JP6243602B2 (ja) * | 2012-03-22 | 2017-12-06 | 旭化成エレクトロニクス株式会社 | 磁場方向計測装置及び回転角度計測装置 |
US10215550B2 (en) | 2012-05-01 | 2019-02-26 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensors having highly uniform magnetic fields |
US9817078B2 (en) | 2012-05-10 | 2017-11-14 | Allegro Microsystems Llc | Methods and apparatus for magnetic sensor having integrated coil |
US9588134B2 (en) * | 2012-05-10 | 2017-03-07 | Infineon Technologies Ag | Increased dynamic range sensor |
US9372242B2 (en) * | 2012-05-11 | 2016-06-21 | Memsic, Inc. | Magnetometer with angled set/reset coil |
CN102809665B (zh) * | 2012-06-04 | 2016-08-03 | 江苏多维科技有限公司 | 一种磁电阻齿轮传感器 |
JP5911065B2 (ja) * | 2012-06-12 | 2016-04-27 | 公立大学法人大阪市立大学 | 漏電検出装置 |
US20140005527A1 (en) * | 2012-06-29 | 2014-01-02 | General Electric Company | Method and system for dynamic referencing and registration used with surgical and interventional procedures |
US9482700B2 (en) * | 2013-01-20 | 2016-11-01 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Current detector to sense current without being in series with conductor |
US9164155B2 (en) | 2013-01-29 | 2015-10-20 | Infineon Technologies Ag | Systems and methods for offset reduction in sensor devices and systems |
CH707687B1 (de) * | 2013-03-08 | 2016-09-15 | Melexis Technologies Nv | Stromsensor. |
US10345343B2 (en) | 2013-03-15 | 2019-07-09 | Allegro Microsystems, Llc | Current sensor isolation |
US9190606B2 (en) | 2013-03-15 | 2015-11-17 | Allegro Micosystems, LLC | Packaging for an electronic device |
US10725100B2 (en) | 2013-03-15 | 2020-07-28 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an externally accessible coil |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US9733106B2 (en) | 2013-05-24 | 2017-08-15 | Allegro Microsystems, Llc | Magnetic field sensor to detect a magnitude of a magnetic field in any direction |
US9664752B2 (en) | 2013-05-24 | 2017-05-30 | Allegro Microsystems, Llc | Magnetic field sensor for detecting a magnetic field in any direction above thresholds |
JP6116061B2 (ja) * | 2013-07-16 | 2017-04-19 | 横河電機株式会社 | 電流センサ |
US10495699B2 (en) | 2013-07-19 | 2019-12-03 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target |
US10145908B2 (en) | 2013-07-19 | 2018-12-04 | Allegro Microsystems, Llc | Method and apparatus for magnetic sensor producing a changing magnetic field |
US9810519B2 (en) | 2013-07-19 | 2017-11-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as tooth detectors |
JP5945976B2 (ja) * | 2013-12-06 | 2016-07-05 | トヨタ自動車株式会社 | バスバモジュール |
JP6123687B2 (ja) * | 2014-01-29 | 2017-05-10 | 株式会社デンソー | 磁気センサ |
US9605983B2 (en) * | 2014-06-09 | 2017-03-28 | Infineon Technologies Ag | Sensor device and sensor arrangement |
US9823168B2 (en) | 2014-06-27 | 2017-11-21 | Infineon Technologies Ag | Auto tire localization systems and methods utilizing a TPMS angular position index |
US10712403B2 (en) | 2014-10-31 | 2020-07-14 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US9823092B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor providing a movement detector |
US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
US9720054B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US9857398B2 (en) | 2015-01-30 | 2018-01-02 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Inter-circuit board connector with current sensor |
US9857437B2 (en) | 2015-04-10 | 2018-01-02 | Allegro Microsystems, Llc | Hall effect sensing element |
DE102015007190B4 (de) * | 2015-06-09 | 2017-03-02 | Micronas Gmbh | Magnetfeldmessvorrichtung |
US10130807B2 (en) | 2015-06-12 | 2018-11-20 | Cochlear Limited | Magnet management MRI compatibility |
US20160381473A1 (en) | 2015-06-26 | 2016-12-29 | Johan Gustafsson | Magnetic retention device |
US10917730B2 (en) | 2015-09-14 | 2021-02-09 | Cochlear Limited | Retention magnet system for medical device |
US10411498B2 (en) | 2015-10-21 | 2019-09-10 | Allegro Microsystems, Llc | Apparatus and methods for extending sensor integrated circuit operation through a power disturbance |
US9976876B2 (en) | 2015-11-24 | 2018-05-22 | Allegro Microsystems, Llc | Methods and apparatus for phase selection in ring magnet sensing |
US10145906B2 (en) | 2015-12-17 | 2018-12-04 | Analog Devices Global | Devices, systems and methods including magnetic structures |
US10283699B2 (en) | 2016-01-29 | 2019-05-07 | Avago Technologies International Sales Pte. Limited | Hall-effect sensor isolator |
US10114085B2 (en) | 2016-03-04 | 2018-10-30 | Allegro Microsystems, Llc | Magnetic field sensor with improved response immunity |
US9910087B2 (en) * | 2016-03-14 | 2018-03-06 | Allegro Microsystems, Llc | Integrated circuit and method for detecting a stress condition in the integrated circuit |
US10260905B2 (en) | 2016-06-08 | 2019-04-16 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors to cancel offset variations |
US10041810B2 (en) | 2016-06-08 | 2018-08-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as movement detectors |
US10012518B2 (en) | 2016-06-08 | 2018-07-03 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a proximity of an object |
US10036785B2 (en) * | 2016-07-18 | 2018-07-31 | Allegro Microsystems, Llc | Temperature-compensated magneto-resistive sensor |
US10114044B2 (en) | 2016-08-08 | 2018-10-30 | Allegro Microsystems, Llc | Current sensor |
EP3293889B1 (en) | 2016-09-13 | 2019-02-27 | Allegro MicroSystems, LLC | Signal isolator having bidirectional diagnostic signal exchange |
KR200483900Y1 (ko) | 2016-11-10 | 2017-07-07 | 한윤식 | 자연대류와 난방이 되는 조립식 돔 하우스 |
US10760981B2 (en) * | 2016-11-18 | 2020-09-01 | Asahi Kasei Microdevices Corporation | Hall sensor |
US10352969B2 (en) | 2016-11-29 | 2019-07-16 | Allegro Microsystems, Llc | Systems and methods for integrated shielding in a current sensor |
US11595768B2 (en) | 2016-12-02 | 2023-02-28 | Cochlear Limited | Retention force increasing components |
US10324144B2 (en) | 2016-12-20 | 2019-06-18 | Infineon Technologies Austria Ag | Lateral transmission of signals across a galvanic isolation barrier |
US9958482B1 (en) * | 2016-12-20 | 2018-05-01 | Allegro Microsystems, Llc | Systems and methods for a high isolation current sensor |
US9941999B1 (en) * | 2017-03-08 | 2018-04-10 | Allegro Microsystems, Llc | Methods and apparatus for communication over an isolation barrier with monitoring |
US10481181B2 (en) * | 2017-04-25 | 2019-11-19 | Allegro Microsystems, Llc | Systems and methods for current sensing |
US11428755B2 (en) | 2017-05-26 | 2022-08-30 | Allegro Microsystems, Llc | Coil actuated sensor with sensitivity detection |
US10996289B2 (en) | 2017-05-26 | 2021-05-04 | Allegro Microsystems, Llc | Coil actuated position sensor with reflected magnetic field |
US10324141B2 (en) | 2017-05-26 | 2019-06-18 | Allegro Microsystems, Llc | Packages for coil actuated position sensors |
US10837943B2 (en) | 2017-05-26 | 2020-11-17 | Allegro Microsystems, Llc | Magnetic field sensor with error calculation |
US10641842B2 (en) | 2017-05-26 | 2020-05-05 | Allegro Microsystems, Llc | Targets for coil actuated position sensors |
US10310028B2 (en) | 2017-05-26 | 2019-06-04 | Allegro Microsystems, Llc | Coil actuated pressure sensor |
US10692362B2 (en) | 2017-06-14 | 2020-06-23 | Allegro Microsystems, Llc | Systems and methods for comparing signal channels having different common mode transient immunity |
US10636285B2 (en) | 2017-06-14 | 2020-04-28 | Allegro Microsystems, Llc | Sensor integrated circuits and methods for safety critical applications |
US10380879B2 (en) | 2017-06-14 | 2019-08-13 | Allegro Microsystems, Llc | Sensor integrated circuits and methods for safety critical applications |
US10622549B2 (en) | 2017-08-29 | 2020-04-14 | Allegro Microsystems, Llc | Signal isolator having interposer |
US10718825B2 (en) * | 2017-09-13 | 2020-07-21 | Nxp B.V. | Stray magnetic field robust magnetic field sensor and system |
US10257974B1 (en) | 2017-09-22 | 2019-04-16 | Cnh Industrial America Llc | Seed meter with multiple sensors for seed cell status monitoring |
DE102017124542B4 (de) * | 2017-10-20 | 2023-12-21 | Infineon Technologies Ag | Magnetfeldsensoranordnung und verfahren zum messen eines externen magnetfelds |
US10236932B1 (en) | 2017-11-02 | 2019-03-19 | Allegro Microsystems, Llc | Signal isolator having magnetic signal latching |
US10509058B2 (en) * | 2018-01-12 | 2019-12-17 | Allegro Microsystems, Llc | Current sensor using modulation of or change of sensitivity of magnetoresistance elements |
EP3531076B1 (en) * | 2018-02-23 | 2021-07-14 | Allegro MicroSystems, LLC | Angle sensor using eddy currents |
US10753968B2 (en) | 2018-02-27 | 2020-08-25 | Allegro Microsystems, Llc | Integrated circuit having insulation breakdown detection |
US10866117B2 (en) | 2018-03-01 | 2020-12-15 | Allegro Microsystems, Llc | Magnetic field influence during rotation movement of magnetic target |
US10978897B2 (en) | 2018-04-02 | 2021-04-13 | Allegro Microsystems, Llc | Systems and methods for suppressing undesirable voltage supply artifacts |
US10605874B2 (en) | 2018-08-06 | 2020-03-31 | Allegro Microsystems, Llc | Magnetic field sensor with magnetoresistance elements having varying sensitivity |
US11255700B2 (en) | 2018-08-06 | 2022-02-22 | Allegro Microsystems, Llc | Magnetic field sensor |
US10921391B2 (en) | 2018-08-06 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor with spacer |
US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
US10866122B2 (en) * | 2019-01-23 | 2020-12-15 | Allegro Microsystems, Llc | Magnetic field sensor for detecting an absolute position of a target object |
US10816366B2 (en) | 2019-01-23 | 2020-10-27 | Allegro Microsystems, Llc | Magnetic field sensor for detecting an absolute position of a target object |
US11112465B2 (en) | 2019-02-05 | 2021-09-07 | Allegro Microsystems, Llc | Integrated circuit having insulation monitoring with frequency discrimination |
US11061084B2 (en) | 2019-03-07 | 2021-07-13 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deflectable substrate |
US10955306B2 (en) | 2019-04-22 | 2021-03-23 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deformable substrate |
US11029373B2 (en) | 2019-07-16 | 2021-06-08 | Allegro Microsystems, Llc | Magnetic field sensors having a magnetic anti-aliasing filter |
US10914765B1 (en) | 2019-07-31 | 2021-02-09 | Allegro Microsystems, Llc | Multi-die integrated current sensor |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
US11115244B2 (en) | 2019-09-17 | 2021-09-07 | Allegro Microsystems, Llc | Signal isolator with three state data transmission |
US11237020B2 (en) | 2019-11-14 | 2022-02-01 | Allegro Microsystems, Llc | Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet |
US11280637B2 (en) | 2019-11-14 | 2022-03-22 | Allegro Microsystems, Llc | High performance magnetic angle sensor |
WO2021120060A1 (zh) * | 2019-12-18 | 2021-06-24 | 上海麦歌恩微电子股份有限公司 | 一种基于垂直霍尔和各向异性磁阻的传感器及其使用方法 |
US11600498B2 (en) * | 2019-12-31 | 2023-03-07 | Texas Instruments Incorporated | Semiconductor package with flip chip solder joint capsules |
US11150273B2 (en) | 2020-01-17 | 2021-10-19 | Allegro Microsystems, Llc | Current sensor integrated circuits |
US11183436B2 (en) | 2020-01-17 | 2021-11-23 | Allegro Microsystems, Llc | Power module package and packaging techniques |
US11604058B2 (en) | 2020-02-25 | 2023-03-14 | Allegro Microsystems, Llc | Reducing stray magnetic field effect on an angle sensor |
US11262422B2 (en) | 2020-05-08 | 2022-03-01 | Allegro Microsystems, Llc | Stray-field-immune coil-activated position sensor |
US11346688B2 (en) | 2020-07-06 | 2022-05-31 | Allegro Microsystems, Llc | Magnetic field sensors for detecting absolute position of multi-track targets |
US11422167B2 (en) * | 2020-07-17 | 2022-08-23 | Texas Instruments Incorporated | Integrated current sensor with magnetic flux concentrators |
US11408945B2 (en) | 2020-11-18 | 2022-08-09 | Allegro Microsystems, Llc | Magnetic field sensor with stacked transducers and capacitive summing amplifier |
US11366141B1 (en) | 2021-01-28 | 2022-06-21 | Allegro Microsystems, Llc | Multipath wide bandwidth current sensor |
US11493361B2 (en) | 2021-02-26 | 2022-11-08 | Allegro Microsystems, Llc | Stray field immune coil-activated sensor |
US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
US11578997B1 (en) | 2021-08-24 | 2023-02-14 | Allegro Microsystems, Llc | Angle sensor using eddy currents |
US11644485B2 (en) | 2021-10-07 | 2023-05-09 | Allegro Microsystems, Llc | Current sensor integrated circuits |
US11768230B1 (en) | 2022-03-30 | 2023-09-26 | Allegro Microsystems, Llc | Current sensor integrated circuit with a dual gauge lead frame |
US11994541B2 (en) | 2022-04-15 | 2024-05-28 | Allegro Microsystems, Llc | Current sensor assemblies for low currents |
US11719769B1 (en) | 2022-06-14 | 2023-08-08 | Allegro Microsystems, Llc | Method and apparatus for sensor signal path diagnostics |
DE102022120256A1 (de) | 2022-08-11 | 2024-02-22 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Verfahren und Vorrichtung zu einer In-situ-AC-Strommessung an Stromschienen zwischen Pulswechselrichter und Verbraucher |
Family Cites Families (230)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4283643A (en) | 1979-05-25 | 1981-08-11 | Electric Power Research Institute, Inc. | Hall sensing apparatus |
CH651151A5 (de) | 1979-11-27 | 1985-08-30 | Landis & Gyr Ag | Messwandler zum messen eines insbesondere von einem messstrom erzeugten magnetfeldes. |
JPS5687273A (en) | 1979-12-17 | 1981-07-15 | Sanyo Electric Co Ltd | Automatic head leading device |
US4343026A (en) | 1980-07-09 | 1982-08-03 | Spin Physics, Inc. | Magnetoresistive head employing field feedback |
JPS6311672Y2 (ja) * | 1980-12-22 | 1988-04-05 | ||
JPS57105977A (en) | 1980-12-23 | 1982-07-01 | Toshiba Corp | Air cell |
CH651701A5 (de) | 1980-12-24 | 1985-09-30 | Landis & Gyr Ag | Kompensierter messwandler. |
CH651671A5 (de) | 1980-12-24 | 1985-09-30 | Landis & Gyr Ag | Anordnung zur messung elektrischer leistung oder energie. |
JPS57187671A (en) | 1981-05-15 | 1982-11-18 | Nec Corp | Magnetism sensor |
JPS629970Y2 (ja) | 1981-05-25 | 1987-03-09 | ||
JPS5879430A (ja) | 1981-11-06 | 1983-05-13 | 株式会社東芝 | 変圧器の内部部分放電自動監視装置 |
JPS58155761A (ja) * | 1982-03-10 | 1983-09-16 | Sharp Corp | ホ−ル効果半導体集積回路 |
JPS58155761U (ja) | 1982-04-13 | 1983-10-18 | 三洋電機株式会社 | 筒型電池 |
JPS58187004U (ja) | 1982-06-04 | 1983-12-12 | 松下電器産業株式会社 | スロツトイン式磁気記録再生装置 |
JPS59132091U (ja) | 1983-02-22 | 1984-09-04 | 京都機械株式会社 | 布帛の連続染色用乾燥装置 |
DE3426784A1 (de) | 1984-07-20 | 1986-01-30 | Bosch Gmbh Robert | Magnetoresistiver sensor zur abgabe von elektrischen signalen |
CA1248222A (en) | 1984-08-27 | 1989-01-03 | Yutaka Souda | Magnetic transducer head utilizing magnetoresistance effect |
JPH0627150B2 (ja) | 1985-07-08 | 1994-04-13 | 三菱油化株式会社 | 電気絶縁用エチレン共重合物架橋体 |
JPS6243260A (ja) | 1985-08-20 | 1987-02-25 | Canon Inc | フアクシミリ装置 |
DE3632624C1 (de) * | 1986-09-25 | 1988-03-10 | Balluff Gebhard Feinmech | Stoerfeldunempfindlicher Naeherungsschalter |
CH669852A5 (ja) | 1986-12-12 | 1989-04-14 | Lem Liaisons Electron Mec | |
JPS63150384A (ja) | 1986-12-15 | 1988-06-23 | Hitachi Ltd | 潤滑剤 |
US4772929A (en) | 1987-01-09 | 1988-09-20 | Sprague Electric Company | Hall sensor with integrated pole pieces |
JPS63150384U (ja) * | 1987-03-24 | 1988-10-04 | ||
KR910004261B1 (ko) | 1987-04-09 | 1991-06-25 | 후지쓰 가부시끼가이샤 | 자전 변환 소자를 이용한 검지기 |
JPS63263782A (ja) | 1987-04-22 | 1988-10-31 | Hitachi Ltd | 磁電変換素子 |
EP0300635B1 (en) | 1987-07-07 | 1995-09-13 | Nippondenso Co., Ltd. | Current detecting device using ferromagnetic magnetoresistance element |
JPS6475969A (en) | 1987-09-17 | 1989-03-22 | Mitsubishi Electric Corp | Measuring device of current |
US4823075A (en) | 1987-10-13 | 1989-04-18 | General Electric Company | Current sensor using hall-effect device with feedback |
CH674089A5 (ja) | 1987-10-16 | 1990-04-30 | Lem Liaisons Electron Mec | |
GB8725467D0 (en) | 1987-10-30 | 1987-12-02 | Honeywell Control Syst | Making current sensor |
US4939459A (en) | 1987-12-21 | 1990-07-03 | Tdk Corporation | High sensitivity magnetic sensor |
US5227721A (en) | 1987-12-25 | 1993-07-13 | Sharp Kabushiki Kaisha | Superconductive magnetic sensor having self induced magnetic biasing |
JPH01251763A (ja) | 1988-03-31 | 1989-10-06 | Res Dev Corp Of Japan | 縦型ホール素子と集積化磁気センサ |
JPH0216475A (ja) | 1988-07-04 | 1990-01-19 | Sharp Corp | 超電導磁気測定装置 |
US5041780A (en) | 1988-09-13 | 1991-08-20 | California Institute Of Technology | Integrable current sensors |
US4847584A (en) | 1988-10-14 | 1989-07-11 | Honeywell Inc. | Magnetoresistive magnetic sensor |
US4926116A (en) | 1988-10-31 | 1990-05-15 | Westinghouse Electric Corp. | Wide band large dynamic range current sensor and method of current detection using same |
JPH02170061A (ja) | 1988-12-23 | 1990-06-29 | Fujitsu Ltd | 電力検知装置 |
JPH02212789A (ja) * | 1989-02-13 | 1990-08-23 | Nec Corp | 磁気センサ |
JPH02238372A (ja) | 1989-03-13 | 1990-09-20 | Fujitsu Ltd | 電流検出器 |
JP2796391B2 (ja) | 1990-01-08 | 1998-09-10 | 株式会社日立製作所 | 物理量検出方法および物理量検出装置あるいはこれらの方法あるいは装置を利用したサーボモータおよびこのサーボモータを使用したパワーステアリング装置 |
JPH03214783A (ja) * | 1990-01-19 | 1991-09-19 | Aichi Tokei Denki Co Ltd | 積層型センサ |
JPH03263383A (ja) * | 1990-03-13 | 1991-11-22 | Fujitsu Ltd | 磁気抵抗素子 |
JPH0627150Y2 (ja) | 1990-12-28 | 1994-07-27 | 陽 小川 | 足踏み健康器 |
JPH04290979A (ja) | 1991-03-20 | 1992-10-15 | Hitachi Ltd | 磁気センサ、磁気センサを持つ位置検出装置および磁気センサを利用したトルク検出装置、モータ制御装置、あるいはこのトルク検出装置を有する電動パワーステアリング装置 |
JP3093813B2 (ja) * | 1991-03-29 | 2000-10-03 | 科学技術振興事業団 | 磁気センサ |
JP3206027B2 (ja) | 1991-07-05 | 2001-09-04 | 株式会社村田製作所 | 微小電流センサ |
EP0537419A1 (de) | 1991-10-09 | 1993-04-21 | Landis & Gyr Business Support AG | Anordnung mit einem integrierten Magnetfeldsensor sowie einem ferromagnetischen ersten und zweiten Magnetfluss-Konzentrator und Verfahren zum Einbau einer Vielzahl von Anordnungen in je einem Kunststoffgehäuse |
JPH05126865A (ja) | 1991-10-22 | 1993-05-21 | Hitachi Ltd | 電流検出装置あるいは電流検出方法 |
JPH05264701A (ja) * | 1992-01-23 | 1993-10-12 | Fujitsu Ltd | 磁気センサ |
DE4212737C1 (en) | 1992-04-16 | 1993-07-08 | Leica Mikroskopie Und Systeme Gmbh | Compact bridge-connected sensor - has thin-film resistors on substrate |
CH683469A5 (de) | 1992-07-03 | 1994-03-15 | Landis & Gyr Business Support | Anordnung mit einem einen Magnetfeldsensor enthaltenden Halbleiterplättchen zwischen einem ersten und einem zweiten Polschuh und Verfahren zur Herstellung einer Vielzahl der Anordnungen. |
JPH0627150A (ja) * | 1992-07-07 | 1994-02-04 | Honda Motor Co Ltd | ホール素子型電流センサ |
US5402064A (en) | 1992-09-02 | 1995-03-28 | Santa Barbara Research Center | Magnetoresistive sensor circuit with high output voltage swing and temperature compensation |
JPH06177454A (ja) * | 1992-12-04 | 1994-06-24 | Fujitsu Ltd | 強磁性薄膜磁気抵抗素子とそれを用いた磁気センサ |
DE4243358A1 (de) | 1992-12-21 | 1994-06-23 | Siemens Ag | Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung |
DE4300605C2 (de) | 1993-01-13 | 1994-12-15 | Lust Electronic Systeme Gmbh | Sensorchip |
US5442283A (en) | 1993-09-03 | 1995-08-15 | Allegro Microsystems, Inc. | Hall-voltage slope-activated sensor |
JP3234394B2 (ja) * | 1994-02-04 | 2001-12-04 | 株式会社日本自動車部品総合研究所 | 電流測定装置 |
US6002553A (en) | 1994-02-28 | 1999-12-14 | The United States Of America As Represented By The United States Department Of Energy | Giant magnetoresistive sensor |
US5583725A (en) | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5500590A (en) | 1994-07-20 | 1996-03-19 | Honeywell Inc. | Apparatus for sensing magnetic fields using a coupled film magnetoresistive transducer |
JP3214783B2 (ja) | 1994-07-25 | 2001-10-02 | 本田技研工業株式会社 | 燃料タンクの支持構造 |
DE4436876A1 (de) | 1994-10-15 | 1996-04-18 | Lust Antriebstechnik Gmbh | Sensorchip |
JPH08130338A (ja) * | 1994-10-31 | 1996-05-21 | Nec Corp | 薄膜磁気センサ |
US5561368A (en) | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
US5570034A (en) | 1994-12-29 | 1996-10-29 | Intel Corporation | Using hall effect to monitor current during IDDQ testing of CMOS integrated circuits |
US5488294A (en) | 1995-01-18 | 1996-01-30 | Honeywell Inc. | Magnetic sensor with means for retaining a magnet at a precise calibrated position |
FR2734058B1 (fr) | 1995-05-12 | 1997-06-20 | Thomson Csf | Amperemetre |
US5717327A (en) * | 1995-09-22 | 1998-02-10 | Bradford; Melvin J. | Current sensor |
EP0772046B1 (de) | 1995-10-30 | 2002-04-17 | Sentron Ag | Magnetfeldsensor und Strom- oder Energiesensor |
JPH09166612A (ja) | 1995-12-18 | 1997-06-24 | Nissan Motor Co Ltd | 磁気センサ |
JPH09257835A (ja) | 1996-03-22 | 1997-10-03 | Toshiba Corp | 電流検出装置 |
US5929636A (en) | 1996-05-02 | 1999-07-27 | Integrated Magnetoelectronics | All-metal giant magnetoresistive solid-state component |
DE19619806A1 (de) | 1996-05-15 | 1997-11-20 | Siemens Ag | Magnetfeldempfindliche Sensoreinrichtung mit mehreren GMR-Sensorelementen |
FR2749664B1 (fr) | 1996-06-05 | 1998-07-24 | Chauvin Arnoux | Dispositif de mesure de courants faibles par pince amperemetrique |
FR2750769B1 (fr) * | 1996-07-05 | 1998-11-13 | Thomson Csf | Capteur de champ magnetique en couche mince |
US5831426A (en) | 1996-08-16 | 1998-11-03 | Nonvolatile Electronics, Incorporated | Magnetic current sensor |
US5896030A (en) * | 1996-10-09 | 1999-04-20 | Honeywell Inc. | Magnetic sensor with components attached to transparent plate for laser trimming during calibration |
DE19650078A1 (de) | 1996-12-03 | 1998-06-04 | Inst Mikrostrukturtechnologie | Sensorelement zur Bestimmung eines Magnetfeldes oder eines Stromes |
JPH10293141A (ja) | 1997-04-18 | 1998-11-04 | Yasusuke Yamamoto | 電流センサー |
EP0874244B1 (de) | 1997-04-19 | 2002-01-30 | LUST ANTRIEBSTECHNIK GmbH | Verfahren zum Messen von elektrischen Strömen in n Leitern sowie Vorrichtung zur Durchführung des Verfahrens |
US5877705A (en) | 1997-04-22 | 1999-03-02 | Nu-Metrics, Inc. | Method and apparatus for analyzing traffic and a sensor therefor |
WO1998057188A1 (en) | 1997-06-13 | 1998-12-17 | Koninklijke Philips Electronics N.V. | Sensor comprising a wheatstone bridge |
US5952825A (en) | 1997-08-14 | 1999-09-14 | Honeywell Inc. | Magnetic field sensing device having integral coils for producing magnetic fields |
US6356068B1 (en) | 1997-09-15 | 2002-03-12 | Ams International Ag | Current monitor system and a method for manufacturing it |
US5883567A (en) | 1997-10-10 | 1999-03-16 | Analog Devices, Inc. | Packaged integrated circuit with magnetic flux concentrator |
US6094330A (en) | 1998-01-14 | 2000-07-25 | General Electric Company | Circuit interrupter having improved current sensing apparatus |
US6300617B1 (en) | 1998-03-04 | 2001-10-09 | Nonvolatile Electronics, Incorporated | Magnetic digital signal coupler having selected/reversal directions of magnetization |
JP3544141B2 (ja) * | 1998-05-13 | 2004-07-21 | 三菱電機株式会社 | 磁気検出素子および磁気検出装置 |
JP3623367B2 (ja) | 1998-07-17 | 2005-02-23 | アルプス電気株式会社 | 巨大磁気抵抗効果素子を備えたポテンショメータ |
JP3623366B2 (ja) | 1998-07-17 | 2005-02-23 | アルプス電気株式会社 | 巨大磁気抵抗効果素子を備えた磁界センサおよびその製造方法と製造装置 |
US6809515B1 (en) | 1998-07-31 | 2004-10-26 | Spinix Corporation | Passive solid-state magnetic field sensors and applications therefor |
US6424018B1 (en) | 1998-10-02 | 2002-07-23 | Sanken Electric Co., Ltd. | Semiconductor device having a hall-effect element |
TW434411B (en) | 1998-10-14 | 2001-05-16 | Tdk Corp | Magnetic sensor apparatus, current sensor apparatus and magnetic sensing element |
TW534999B (en) | 1998-12-15 | 2003-06-01 | Tdk Corp | Magnetic sensor apparatus and current sensor apparatus |
JP3414292B2 (ja) | 1998-12-25 | 2003-06-09 | 株式会社豊田中央研究所 | 磁界検出装置及び磁界検出素子 |
JP3249810B2 (ja) | 1999-01-21 | 2002-01-21 | ティーディーケイ株式会社 | 電流センサ装置 |
EP1031844A3 (fr) | 1999-02-25 | 2009-03-11 | Liaisons Electroniques-Mecaniques Lem S.A. | Procédé de fabrication d'un capteur de courant électrique |
US6331773B1 (en) | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
JP3583649B2 (ja) | 1999-04-27 | 2004-11-04 | Tdk株式会社 | 薄膜磁気ヘッドおよびその製造方法ならびに磁気抵抗効果装置 |
DE10017374B4 (de) | 1999-05-25 | 2007-05-10 | Siemens Ag | Magnetische Koppeleinrichtung und deren Verwendung |
GB2352522B (en) | 1999-05-28 | 2003-08-06 | Caithness Dev Ltd | A sensor |
US6501678B1 (en) | 1999-06-18 | 2002-12-31 | Koninklijke Philips Electronics N.V. | Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems |
JP3696448B2 (ja) | 1999-09-02 | 2005-09-21 | 矢崎総業株式会社 | 電流検出器 |
JP2001084535A (ja) | 1999-09-16 | 2001-03-30 | Tdk Corp | 薄膜磁気ヘッドの製造方法および磁気抵抗効果装置の製造方法 |
DE60044568D1 (de) | 1999-10-01 | 2010-07-29 | Nve Corp | Gerät zur Überwachung eines magnetischen digitalen Überträgers |
US6445171B2 (en) | 1999-10-29 | 2002-09-03 | Honeywell Inc. | Closed-loop magnetoresistive current sensor system having active offset nulling |
US6462541B1 (en) | 1999-11-12 | 2002-10-08 | Nve Corporation | Uniform sense condition magnetic field sensor using differential magnetoresistance |
JP2001165963A (ja) | 1999-12-09 | 2001-06-22 | Sanken Electric Co Ltd | ホール素子を備えた電流検出装置 |
JP3852554B2 (ja) | 1999-12-09 | 2006-11-29 | サンケン電気株式会社 | ホール素子を備えた電流検出装置 |
JP4164615B2 (ja) | 1999-12-20 | 2008-10-15 | サンケン電気株式会社 | ホ−ル素子を備えた電流検出装置 |
US6433981B1 (en) | 1999-12-30 | 2002-08-13 | General Electric Company | Modular current sensor and power source |
JP4216984B2 (ja) | 2000-02-14 | 2009-01-28 | パナソニック株式会社 | 部品振り分け制御装置、部品振り分け方法、および部品振り分けシステム。 |
JP2001227902A (ja) * | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | 半導体装置 |
WO2001071713A1 (en) | 2000-03-22 | 2001-09-27 | Nve Corporation | Read heads in planar monolithic integrated circuit chips |
DE10028640B4 (de) | 2000-06-09 | 2005-11-03 | Institut für Physikalische Hochtechnologie e.V. | Wheatstonebrücke, beinhaltend Brückenelemente, bestehend aus einem Spin-Valve-System, sowie ein Verfahren zu deren Herstellung |
JP2002082136A (ja) | 2000-06-23 | 2002-03-22 | Yazaki Corp | 電流センサ |
JP2002026419A (ja) | 2000-07-07 | 2002-01-25 | Sanken Electric Co Ltd | 磁電変換装置 |
US6429640B1 (en) | 2000-08-21 | 2002-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | GMR high current, wide dynamic range sensor |
JP2002107382A (ja) | 2000-09-27 | 2002-04-10 | Asahi Kasei Corp | 半導体装置およびその製造方法、並びに電流センサ |
JP2002131342A (ja) | 2000-10-19 | 2002-05-09 | Canon Electronics Inc | 電流センサ |
DE20018538U1 (de) | 2000-10-27 | 2002-03-07 | Mannesmann Vdo Ag | Sensormodul |
JP2002163808A (ja) | 2000-11-22 | 2002-06-07 | Tdk Corp | 磁気抵抗効果装置およびその製造方法ならびに薄膜磁気ヘッドおよびその製造方法 |
GB0029815D0 (en) | 2000-12-06 | 2001-01-17 | Pace Micro Tech Plc | Voltage measuring apparatus |
US6833615B2 (en) * | 2000-12-29 | 2004-12-21 | Intel Corporation | Via-in-pad with off-center geometry |
US20020093332A1 (en) | 2001-01-18 | 2002-07-18 | Thaddeus Schroeder | Magnetic field sensor with tailored magnetic response |
DE10108640A1 (de) | 2001-02-22 | 2002-09-19 | Infineon Technologies Ag | Sensoranordnung zur kontaktlosen Strommessung |
US6661083B2 (en) | 2001-02-27 | 2003-12-09 | Chippac, Inc | Plastic semiconductor package |
DE10159607B4 (de) | 2001-03-09 | 2010-11-18 | Siemens Ag | Analog/Digital-Signalwandlereinrichtung mit galvanischer Trennung in ihrem Singalübertragungsweg |
JP3284130B1 (ja) | 2001-04-25 | 2002-05-20 | ティーディーケイ株式会社 | 磁気抵抗効果装置およびその製造方法、薄膜磁気ヘッドおよびその製造方法、ヘッドジンバルアセンブリならびにハードディスク装置 |
DE10120408B4 (de) | 2001-04-25 | 2006-02-02 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Halbleiterchip, elektronische Baugruppe aus gestapelten Halbleiterchips und Verfahren zu deren Herstellung |
JP3260740B1 (ja) | 2001-04-25 | 2002-02-25 | ティーディーケイ株式会社 | 磁気抵抗効果装置の製造方法および薄膜磁気ヘッドの製造方法 |
US6563629B2 (en) | 2001-05-18 | 2003-05-13 | Redc Optical Networks Ltd. | Method and apparatus for full C-band amplifier with high dynamic gain range |
US6946834B2 (en) | 2001-06-01 | 2005-09-20 | Koninklijke Philips Electronics N.V. | Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring a magnetic field |
DE10128150C1 (de) | 2001-06-11 | 2003-01-23 | Siemens Ag | Magnetoresistives Sensorsystem |
US6542375B1 (en) | 2001-06-14 | 2003-04-01 | National Semiconductor Corporation | Hybrid PCB-IC directional coupler |
EP1267173A3 (en) | 2001-06-15 | 2005-03-23 | Sanken Electric Co., Ltd. | Hall-effect current detector |
JP4164626B2 (ja) | 2001-06-15 | 2008-10-15 | サンケン電気株式会社 | ホ−ル素子を備えた電流検出装置 |
EP1273921A1 (en) | 2001-07-06 | 2003-01-08 | Sanken Electric Co., Ltd. | Hall-effect current detector |
JP2003043074A (ja) * | 2001-07-26 | 2003-02-13 | Asahi Kasei Corp | 電流検出装置及びその製造方法 |
DE10140043B4 (de) | 2001-08-16 | 2006-03-23 | Siemens Ag | Schichtensystem mit erhöhtem magnetoresistiven Effekt sowie Verwendung desselben |
US6949927B2 (en) | 2001-08-27 | 2005-09-27 | International Rectifier Corporation | Magnetoresistive magnetic field sensors and motor control devices using same |
DE10142120A1 (de) | 2001-08-30 | 2003-03-27 | Infineon Technologies Ag | Elektronisches Bauteil mit wenigstens zwei gestapelten Halbleiterchips sowie Verfahren zu seiner Herstellung |
DE10142114C1 (de) | 2001-08-30 | 2003-02-13 | Infineon Technologies Ag | Elektronisches Bauteil mit wenigstens zwei Halbleiterchips sowie Verfahren zu seiner Herstellung |
DE10142118B4 (de) | 2001-08-30 | 2007-07-12 | Infineon Technologies Ag | Elektronisches Bauteil mit wenigstens zwei gestapelten Halbleiterchips sowie Verfahren zu seiner Herstellung |
DE10143437A1 (de) | 2001-09-05 | 2003-03-27 | Hella Kg Hueck & Co | Vorrichtung zur Ermittlung der Position eines Schaltstocks oder eines Wählhebels eines Fahrzeuggetriebes |
KR100746546B1 (ko) | 2001-11-01 | 2007-08-06 | 아사히 가세이 일렉트로닉스 가부시끼가이샤 | 전류 센서 및 전류 센서 제조 방법 |
DE10155423B4 (de) | 2001-11-12 | 2006-03-02 | Siemens Ag | Verfahren zur homogenen Magnetisierung eines austauschgekoppelten Schichtsystems eines magneto-resistiven Bauelements, insbesondere eines Sensor-oder Logikelements |
US6667682B2 (en) | 2001-12-26 | 2003-12-23 | Honeywell International Inc. | System and method for using magneto-resistive sensors as dual purpose sensors |
DE10202287C1 (de) | 2002-01-22 | 2003-08-07 | Siemens Ag | Verfahren zur Herstellung einer monolithischen Brückenschaltung bestehend aus mehreren, als magneto-resistive Elemente ausgebildeten Brückengliedern und eine hiernach hergestellte monolithische Brückenschaltung |
US6815944B2 (en) | 2002-01-31 | 2004-11-09 | Allegro Microsystems, Inc. | Method and apparatus for providing information from a speed and direction sensor |
US6984978B2 (en) | 2002-02-11 | 2006-01-10 | Honeywell International Inc. | Magnetic field sensor |
DE10222395B4 (de) | 2002-05-21 | 2010-08-05 | Siemens Ag | Schaltungseinrichtung mit mehreren TMR-Sensorelementen |
WO2003107018A1 (ja) | 2002-06-18 | 2003-12-24 | 旭化成株式会社 | 電流測定方法および電流測定装置 |
DE10228764B4 (de) | 2002-06-27 | 2006-07-13 | Infineon Technologies Ag | Anordnung zum Testen von Halbleitereinrichtungen |
JP4180321B2 (ja) * | 2002-07-30 | 2008-11-12 | 旭化成エレクトロニクス株式会社 | 磁気センサおよび磁気センサの製造方法 |
US6781359B2 (en) | 2002-09-20 | 2004-08-24 | Allegro Microsystems, Inc. | Integrated current sensor |
JP3896590B2 (ja) | 2002-10-28 | 2007-03-22 | サンケン電気株式会社 | 電流検出装置 |
JP2004158668A (ja) * | 2002-11-07 | 2004-06-03 | Asahi Kasei Corp | ハイブリッド磁気センサ及びその製造方法 |
JP4200358B2 (ja) * | 2002-12-13 | 2008-12-24 | サンケン電気株式会社 | ホール素子を備えた電流検出装置 |
US7259545B2 (en) * | 2003-02-11 | 2007-08-21 | Allegro Microsystems, Inc. | Integrated sensor |
FI114854B (fi) | 2003-02-11 | 2005-01-14 | Liekki Oy | Menetelmä nesteen syöttämiseksi liekkiruiskutuslaitteistoon |
US6995957B2 (en) | 2003-03-18 | 2006-02-07 | Hitachi Global Storage Technologies Netherland B.V. | Magnetoresistive sensor having a high resistance soft magnetic layer between sensor stack and shield |
DE10314602B4 (de) | 2003-03-31 | 2007-03-01 | Infineon Technologies Ag | Integrierter differentieller Magnetfeldsensor |
JP2004356338A (ja) | 2003-05-28 | 2004-12-16 | Res Inst Electric Magnetic Alloys | 薄膜磁気センサ及びその製造方法 |
JP2006527497A (ja) | 2003-06-11 | 2006-11-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 磁気層構造体を備えるデバイスを製造する方法 |
US7075287B1 (en) | 2003-08-26 | 2006-07-11 | Allegro Microsystems, Inc. | Current sensor |
US7709754B2 (en) | 2003-08-26 | 2010-05-04 | Allegro Microsystems, Inc. | Current sensor |
US7166807B2 (en) | 2003-08-26 | 2007-01-23 | Allegro Microsystems, Inc. | Current sensor |
US20060219436A1 (en) | 2003-08-26 | 2006-10-05 | Taylor William P | Current sensor |
FR2860592B1 (fr) | 2003-10-06 | 2006-01-21 | Michel Remy Jean Combier | Dispositif de mesure de courant sans contact, a grande dynamique, robuste et a bas cout. |
JP5197961B2 (ja) | 2003-12-17 | 2013-05-15 | スタッツ・チップパック・インコーポレイテッド | マルチチップパッケージモジュールおよびその製造方法 |
JP2005195427A (ja) | 2004-01-06 | 2005-07-21 | Asahi Kasei Electronics Co Ltd | 電流測定装置、電流測定方法および電流測定プログラム |
DE102004003369A1 (de) | 2004-01-22 | 2005-08-18 | Siemens Ag | Magnetisches Bauelement mit hoher Grenzfrequenz |
DE602004030160D1 (de) | 2004-02-19 | 2010-12-30 | Mitsubishi Electric Corp | Magnetfelddetektor und stromdetektionseinrichtung, positionsdetektionseinrichtung und rotationsdetektionseinrichtung mit dem magnetfelddetektor |
JP4433820B2 (ja) | 2004-02-20 | 2010-03-17 | Tdk株式会社 | 磁気検出素子およびその形成方法ならびに磁気センサ、電流計 |
DE102004009267B3 (de) | 2004-02-26 | 2005-09-22 | Siemens Ag | Ausleseeinrichtung wenigstens eines magnetoresistiven Elementes |
US7422930B2 (en) | 2004-03-02 | 2008-09-09 | Infineon Technologies Ag | Integrated circuit with re-route layer and stacked die assembly |
JP4511219B2 (ja) | 2004-03-04 | 2010-07-28 | 三洋電機株式会社 | モータ駆動回路 |
DE102004062474A1 (de) | 2004-03-23 | 2005-10-13 | Siemens Ag | Vorrichtung zur potenzialfreien Strommessung |
DE102004017191B4 (de) | 2004-04-07 | 2007-07-12 | Infineon Technologies Ag | Vorrichtung und Verfahren zur Ermittlung einer Richtung eines Objekts |
US20050246114A1 (en) | 2004-04-29 | 2005-11-03 | Rannow Randy K | In-line field sensor |
DE102004021862B4 (de) | 2004-05-04 | 2014-08-07 | Infineon Technologies Ag | Stromsenor |
US7961431B2 (en) | 2004-05-04 | 2011-06-14 | Illinois Tool Works Inc. | Additive-free fiber for metal texture of hard disk drives |
JP2005331437A (ja) * | 2004-05-21 | 2005-12-02 | Nsk Ltd | 多極磁石エンコーダの出力検査方法 |
DE102004027273A1 (de) | 2004-06-04 | 2005-12-29 | Infineon Technologies Ag | Halbleiterbaustein mit einer ersten und mindestens einer weiteren Halbleiterschaltung und Verfahren |
WO2006017727A2 (en) | 2004-08-05 | 2006-02-16 | Ivax Corporation | Glycosides and salts thereof |
DE102004038847B3 (de) | 2004-08-10 | 2005-09-01 | Siemens Ag | Einrichtung zur potenzialfreien Messung eines in einer elektrischen Leiterbahn fließenden Stromes |
DE102004040079B3 (de) | 2004-08-18 | 2005-12-22 | Siemens Ag | Magnetfeldsensor |
DE102005037905A1 (de) | 2004-08-18 | 2006-03-09 | Siemens Ag | Magnetfeldsensor zum Messen eines Gradienten eines magnetischen Feldes |
DE102004043737A1 (de) | 2004-09-09 | 2006-03-30 | Siemens Ag | Vorrichtung zum Erfassen des Gradienten eines Magnetfeldes und Verfahren zur Herstellung der Vorrichtung |
JP4360998B2 (ja) | 2004-10-01 | 2009-11-11 | Tdk株式会社 | 電流センサ |
US7777607B2 (en) | 2004-10-12 | 2010-08-17 | Allegro Microsystems, Inc. | Resistor having a predetermined temperature coefficient |
JP4105142B2 (ja) | 2004-10-28 | 2008-06-25 | Tdk株式会社 | 電流センサ |
DE102004053551A1 (de) | 2004-11-05 | 2006-05-18 | Siemens Ag | Vorrichtung zum Erfassen eines beweglichen oder bewegbaren elektrisch und/oder magnetisch leitenden Teiles |
JP4105145B2 (ja) | 2004-11-30 | 2008-06-25 | Tdk株式会社 | 電流センサ |
JP4105147B2 (ja) | 2004-12-06 | 2008-06-25 | Tdk株式会社 | 電流センサ |
JP4131869B2 (ja) | 2005-01-31 | 2008-08-13 | Tdk株式会社 | 電流センサ |
US7476953B2 (en) * | 2005-02-04 | 2009-01-13 | Allegro Microsystems, Inc. | Integrated sensor having a magnetic flux concentrator |
EP1691204B1 (en) | 2005-02-15 | 2007-12-12 | C.R.F. Società Consortile per Azioni | A surface-mounted integrated current sensor |
DE102006008257B4 (de) | 2005-03-22 | 2010-01-14 | Siemens Ag | Magnetoresistives Mehrschichtensystem vom Spin Valve-Typ mit einer magnetisch weicheren Elektrode aus mehreren Schichten und dessen Verwendung |
EP1880422B1 (en) | 2005-05-04 | 2011-08-03 | Nxp B.V. | A device comprising a sensor module |
US7358724B2 (en) | 2005-05-16 | 2008-04-15 | Allegro Microsystems, Inc. | Integrated magnetic flux concentrator |
JP2007003237A (ja) | 2005-06-21 | 2007-01-11 | Denso Corp | 電流センサ |
DE102006021774B4 (de) | 2005-06-23 | 2014-04-03 | Siemens Aktiengesellschaft | Stromsensor zur galvanisch getrennten Strommessung |
JP4466487B2 (ja) | 2005-06-27 | 2010-05-26 | Tdk株式会社 | 磁気センサおよび電流センサ |
US7541804B2 (en) | 2005-07-29 | 2009-06-02 | Everspin Technologies, Inc. | Magnetic tunnel junction sensor |
DE102005038655B3 (de) | 2005-08-16 | 2007-03-22 | Siemens Ag | Magnetfeldsensitive Sensoreinrichtung |
DE102005040539B4 (de) | 2005-08-26 | 2007-07-05 | Siemens Ag | Magnetfeldsensitive Sensoreinrichtung |
JP2007064851A (ja) | 2005-08-31 | 2007-03-15 | Tdk Corp | コイル、コイルモジュールおよびその製造方法、ならびに電流センサおよびその製造方法 |
JP4415923B2 (ja) | 2005-09-30 | 2010-02-17 | Tdk株式会社 | 電流センサ |
JP4298691B2 (ja) | 2005-09-30 | 2009-07-22 | Tdk株式会社 | 電流センサおよびその製造方法 |
JP4224483B2 (ja) | 2005-10-14 | 2009-02-12 | Tdk株式会社 | 電流センサ |
DE102005052688A1 (de) | 2005-11-04 | 2007-05-24 | Siemens Ag | Magnetfeldsensor mit einer Messbrücke mit MR-Sensor |
US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
JP2007218700A (ja) | 2006-02-15 | 2007-08-30 | Tdk Corp | 磁気センサおよび電流センサ |
DE102006007770A1 (de) | 2006-02-20 | 2007-08-30 | Siemens Ag | Sensoreinrichtung zur Erfassung einer Magnetfeldgröße |
US20070279053A1 (en) | 2006-05-12 | 2007-12-06 | Taylor William P | Integrated current sensor |
DE202006020504U1 (de) | 2006-06-06 | 2008-09-25 | Insta Elektro Gmbh | Elektrisches/elektronisches Gerät |
DE102006028250A1 (de) | 2006-06-20 | 2007-12-27 | Carl Zeiss Microimaging Gmbh | Verfahren zur Überwachung von Laserbearbeitungsprozessen |
DE102006028698B3 (de) | 2006-06-22 | 2007-12-13 | Siemens Ag | OMR-Sensor und Anordnung aus solchen Sensoren |
KR101279116B1 (ko) | 2006-06-30 | 2013-06-26 | 엘지디스플레이 주식회사 | 듀얼 뷰 디스플레이 장치 및 듀얼 뷰 액정 디스플레이 장치 |
DE102006046739B4 (de) | 2006-09-29 | 2008-08-14 | Siemens Ag | Verfahren zum Betreiben eines Magnetfeldsensors und zugehöriger Magnetfeldsensor |
DE102006046736B4 (de) | 2006-09-29 | 2008-08-14 | Siemens Ag | Verfahren zum Betreiben eines Magnetfeldsensors und zugehöriger Magnetfeldsensor |
US7816905B2 (en) * | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
US8203332B2 (en) | 2008-06-24 | 2012-06-19 | Magic Technologies, Inc. | Gear tooth sensor (GTS) with magnetoresistive bridge |
AT508554B1 (de) | 2009-08-26 | 2011-02-15 | Univ Wien Tech | Chalkon-hydroxylase |
DE102012012759A1 (de) | 2012-06-27 | 2014-01-02 | Sensitec Gmbh | Anordnung zur Strommessung |
-
2006
- 2006-01-20 US US11/335,944 patent/US7768083B2/en active Active
-
2007
- 2007-01-04 WO PCT/US2007/000093 patent/WO2007087121A2/en active Application Filing
- 2007-01-04 EP EP10195145A patent/EP2290380B1/en not_active Revoked
- 2007-01-04 EP EP10195143A patent/EP2290379B1/en not_active Revoked
- 2007-01-04 KR KR1020087018642A patent/KR101366007B1/ko active IP Right Grant
- 2007-01-04 AT AT10195143T patent/ATE550672T1/de active
- 2007-01-04 EP EP10195147A patent/EP2290381B1/en not_active Revoked
- 2007-01-04 AT AT07716253T patent/ATE550671T1/de active
- 2007-01-04 AT AT10195147T patent/ATE550673T1/de active
- 2007-01-04 JP JP2008551281A patent/JP5748393B2/ja active Active
- 2007-01-04 EP EP07716253A patent/EP1974223B1/en not_active Revoked
- 2007-01-04 AT AT10195145T patent/ATE551609T1/de active
-
2010
- 2010-06-02 US US12/792,245 patent/US8629520B2/en active Active
-
2011
- 2011-12-02 JP JP2011264267A patent/JP5635966B2/ja active Active
-
2013
- 2013-04-16 JP JP2013085409A patent/JP2013178259A/ja not_active Withdrawn
- 2013-06-14 US US13/918,064 patent/US8952471B2/en active Active
- 2013-06-14 US US13/918,075 patent/US9082957B2/en active Active
- 2013-09-12 JP JP2013189638A patent/JP5902657B2/ja active Active
-
2014
- 2014-02-18 JP JP2014028213A patent/JP5848382B2/ja active Active
-
2015
- 2015-03-09 JP JP2015045607A patent/JP6376995B2/ja active Active
- 2015-05-08 US US14/707,319 patent/US9859489B2/en active Active
- 2015-08-10 JP JP2015157901A patent/JP6150855B2/ja active Active
-
2016
- 2016-12-30 US US15/395,083 patent/US10069063B2/en active Active
-
2017
- 2017-09-11 JP JP2017173831A patent/JP2018036267A/ja active Pending
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6150855B2 (ja) | 集積化センサの配列 | |
US7816905B2 (en) | Arrangements for a current sensing circuit and integrated current sensor | |
US7518354B2 (en) | Multi-substrate integrated sensor | |
US8907669B2 (en) | Circuits and techniques for adjusting a sensitivity of a closed-loop current sensor | |
US20220091195A1 (en) | Magnetic field sensor on integrated circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160623 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160701 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160929 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20161221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170515 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170523 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6150855 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |