DE602004030160D1 - Magnetfelddetektor und stromdetektionseinrichtung, positionsdetektionseinrichtung und rotationsdetektionseinrichtung mit dem magnetfelddetektor - Google Patents
Magnetfelddetektor und stromdetektionseinrichtung, positionsdetektionseinrichtung und rotationsdetektionseinrichtung mit dem magnetfelddetektorInfo
- Publication number
- DE602004030160D1 DE602004030160D1 DE602004030160T DE602004030160T DE602004030160D1 DE 602004030160 D1 DE602004030160 D1 DE 602004030160D1 DE 602004030160 T DE602004030160 T DE 602004030160T DE 602004030160 T DE602004030160 T DE 602004030160T DE 602004030160 D1 DE602004030160 D1 DE 602004030160D1
- Authority
- DE
- Germany
- Prior art keywords
- detection device
- magnetic field
- field detector
- circuit
- position detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004043248 | 2004-02-19 | ||
PCT/JP2004/013824 WO2005081007A1 (ja) | 2004-02-19 | 2004-09-22 | 磁界検出器、これを用いた電流検出装置、位置検出装置および回転検出装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004030160D1 true DE602004030160D1 (de) | 2010-12-30 |
Family
ID=34879290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004030160T Active DE602004030160D1 (de) | 2004-02-19 | 2004-09-22 | Magnetfelddetektor und stromdetektionseinrichtung, positionsdetektionseinrichtung und rotationsdetektionseinrichtung mit dem magnetfelddetektor |
Country Status (6)
Country | Link |
---|---|
US (2) | US7375516B2 (de) |
EP (1) | EP1720027B1 (de) |
JP (1) | JP4513804B2 (de) |
CN (1) | CN100541222C (de) |
DE (1) | DE602004030160D1 (de) |
WO (1) | WO2005081007A1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
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US7777607B2 (en) | 2004-10-12 | 2010-08-17 | Allegro Microsystems, Inc. | Resistor having a predetermined temperature coefficient |
JP4508058B2 (ja) | 2005-09-26 | 2010-07-21 | 三菱電機株式会社 | 磁界検出装置およびその製造方法 |
JP2007188739A (ja) * | 2006-01-13 | 2007-07-26 | Alps Electric Co Ltd | 磁気スイッチ |
US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
FR2898189B1 (fr) * | 2006-03-02 | 2008-10-17 | Moving Magnet Tech | Capteur de position a direction d'aimantation variable et procede de realisation |
WO2008149444A1 (ja) * | 2007-06-07 | 2008-12-11 | Fujitsu Limited | ヘッドスライダおよび記憶媒体駆動装置 |
US7795862B2 (en) * | 2007-10-22 | 2010-09-14 | Allegro Microsystems, Inc. | Matching of GMR sensors in a bridge |
JP4973869B2 (ja) * | 2007-11-30 | 2012-07-11 | Tdk株式会社 | 移動体検出装置 |
US8587297B2 (en) | 2007-12-04 | 2013-11-19 | Infineon Technologies Ag | Integrated circuit including sensor having injection molded magnetic material |
US7619407B2 (en) * | 2008-04-10 | 2009-11-17 | Magic Technologies, Inc. | Gear tooth sensor with single magnetoresistive bridge |
US8174256B2 (en) * | 2008-05-30 | 2012-05-08 | Infineon Technologies Ag | Methods and systems for magnetic field sensing |
US8058870B2 (en) | 2008-05-30 | 2011-11-15 | Infineon Technologies Ag | Methods and systems for magnetic sensing |
US8610430B2 (en) * | 2008-05-30 | 2013-12-17 | Infineon Technologies Ag | Bias field generation for a magneto sensor |
US20110187359A1 (en) * | 2008-05-30 | 2011-08-04 | Tobias Werth | Bias field generation for a magneto sensor |
US7816905B2 (en) * | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
JP5299675B2 (ja) * | 2008-11-27 | 2013-09-25 | Tdk株式会社 | 信号伝送装置 |
JP5013135B2 (ja) * | 2009-07-09 | 2012-08-29 | Tdk株式会社 | 磁気式位置検出装置 |
KR101687939B1 (ko) * | 2009-07-27 | 2016-12-19 | 아이아이아이 홀딩스 3, 엘엘씨 | 비접촉 전류 센서 |
JP5794777B2 (ja) | 2010-12-22 | 2015-10-14 | 三菱電機株式会社 | 半導体装置 |
IT1403434B1 (it) * | 2010-12-27 | 2013-10-17 | St Microelectronics Srl | Sensore di campo magnetico avente elementi magnetoresistivi anisotropi, con disposizione perfezionata di relativi elementi di magnetizzazione |
CN102707246B (zh) * | 2011-03-28 | 2016-01-20 | 新科实业有限公司 | 测量隧道磁电阻传感器中纵向偏磁场的方法 |
JP5533826B2 (ja) * | 2011-09-19 | 2014-06-25 | 株式会社デンソー | 電流センサおよび電流センサの組み付け構造 |
CN102419393B (zh) * | 2011-12-30 | 2013-09-04 | 江苏多维科技有限公司 | 一种电流传感器 |
JP5364816B1 (ja) * | 2012-06-08 | 2013-12-11 | 株式会社フジクラ | 磁気素子制御装置、磁気素子制御方法及び磁気検出装置 |
JP6030866B2 (ja) * | 2012-06-14 | 2016-11-24 | 矢崎総業株式会社 | 電流センサ |
US9310446B2 (en) * | 2012-10-18 | 2016-04-12 | Analog Devices, Inc. | Magnetic field direction detector |
JP5924695B2 (ja) * | 2013-02-04 | 2016-05-25 | 三菱電機株式会社 | 磁界検出装置、電流検出装置、半導体集積回路、および、磁界検出方法 |
JP5924694B2 (ja) * | 2013-02-04 | 2016-05-25 | 三菱電機株式会社 | 磁界検出装置、電流検出装置、半導体集積回路、および、磁界検出方法 |
JP6255902B2 (ja) * | 2013-10-30 | 2018-01-10 | Tdk株式会社 | 磁界検出装置 |
US10989769B2 (en) * | 2013-12-27 | 2021-04-27 | Infineon Technologies Ag | Magneto-resistive structured device having spontaneously generated in-plane closed flux magnetization pattern |
CN103983926A (zh) * | 2014-05-29 | 2014-08-13 | 北京科大分析检验中心有限公司 | 基于数字锁相技术的磁电系数的测量方法和装置 |
US10422660B2 (en) * | 2015-08-07 | 2019-09-24 | Dana Automotive Systems Group, Llc | Wireless system for determining displacement of spinning components |
CN105403922B (zh) * | 2015-12-18 | 2018-06-19 | 北京航星机器制造有限公司 | 一种弱磁检测方法 |
CN107037381A (zh) * | 2015-12-29 | 2017-08-11 | 爱盛科技股份有限公司 | 磁场感测装置及其感测方法 |
US10222430B2 (en) * | 2016-03-01 | 2019-03-05 | Mitsumi Electric Co., Ltd. | Sensor device and semiconductor device |
US10782153B2 (en) | 2016-03-08 | 2020-09-22 | Analog Devices Global | Multiturn sensor arrangement and readout |
JP6430565B2 (ja) | 2016-03-23 | 2018-11-28 | アナログ・デヴァイシズ・グローバル | 磁界検出器 |
CN110582705A (zh) * | 2017-05-01 | 2019-12-17 | 小利兰·斯坦福大学托管委员会 | 用于在gmr生物传感器阵列上进行准确的温度测量的方法 |
US10739165B2 (en) | 2017-07-05 | 2020-08-11 | Analog Devices Global | Magnetic field sensor |
EP3729119B1 (de) | 2017-12-21 | 2023-02-08 | Robert Bosch GmbH | Magnetoresistive magnetfeldsensorbrücke mit kompensiertem querachseneffekt |
US11429348B2 (en) * | 2018-03-16 | 2022-08-30 | Tdk Corporation | Multiply and accumulate calculation device, neuromorphic device, and method for using multiply and accumulate calculation device |
JP6620834B2 (ja) * | 2018-03-27 | 2019-12-18 | Tdk株式会社 | 磁気センサおよび磁気センサシステム |
US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
US11460521B2 (en) | 2019-03-18 | 2022-10-04 | Analog Devices International Unlimited Company | Multiturn sensor arrangement |
JP7293147B2 (ja) * | 2019-04-02 | 2023-06-19 | 株式会社東芝 | 磁気センサ、センサモジュール及び診断装置 |
US11493537B2 (en) * | 2019-08-08 | 2022-11-08 | Sensitec Gmbh | Magnetic field-based current sensor for frequency-compensated measurement of alternating currents |
US11372029B2 (en) * | 2019-12-11 | 2022-06-28 | Tdk Corporation | Magnetic field detection apparatus and current detection apparatus |
US11187764B2 (en) | 2020-03-20 | 2021-11-30 | Allegro Microsystems, Llc | Layout of magnetoresistance element |
JP2022029714A (ja) * | 2020-08-05 | 2022-02-18 | 横河電機株式会社 | 電流測定装置 |
US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5561368A (en) * | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
FR2752302B1 (fr) * | 1996-08-08 | 1998-09-11 | Commissariat Energie Atomique | Capteur de champ magnetique a pont de magnetoresistances |
JP3560821B2 (ja) * | 1998-07-17 | 2004-09-02 | アルプス電気株式会社 | 巨大磁気抵抗効果素子を備えたエンコーダ |
JP2000180207A (ja) * | 1998-12-16 | 2000-06-30 | Yazaki Corp | 磁気センサ |
KR20010075693A (ko) * | 1999-09-10 | 2001-08-09 | 롤페스 요하네스 게라투스 알베르투스 | 자기 스위치 자계가 감소된 자기저항 센서 또는 메모리 소자 |
JP2001217482A (ja) * | 2000-02-03 | 2001-08-10 | Fujitsu Ltd | 磁気センサ及びそれを使用する磁気記憶装置 |
JP2001217484A (ja) | 2000-02-07 | 2001-08-10 | Toyota Motor Corp | 巨大磁気抵抗センサ製造方法 |
DE10009944A1 (de) * | 2000-03-02 | 2001-09-13 | Forschungszentrum Juelich Gmbh | Anordnung zum Messen eines Magnetfeldes und Verfahren zum Herstellen einer Anordnung zum Messen eines Magnetfeldes |
JP3596600B2 (ja) * | 2000-06-02 | 2004-12-02 | ヤマハ株式会社 | 磁気センサ及び同磁気センサの製造方法 |
US6538859B1 (en) * | 2000-07-31 | 2003-03-25 | International Business Machines Corporation | Giant magnetoresistive sensor with an AP-coupled low Hk free layer |
JP3971934B2 (ja) * | 2001-03-07 | 2007-09-05 | ヤマハ株式会社 | 磁気センサとその製法 |
JP2002269706A (ja) * | 2001-03-14 | 2002-09-20 | Sony Corp | マルチチャンネル磁気抵抗効果型磁気ヘッド |
US6774256B2 (en) | 2001-06-22 | 2004-08-10 | Exxonmobil Chemical Patents Inc. | Low corrosive integrated process for preparing dialkyl carbonates |
US7005958B2 (en) * | 2002-06-14 | 2006-02-28 | Honeywell International Inc. | Dual axis magnetic sensor |
US7023206B2 (en) * | 2002-10-18 | 2006-04-04 | Virginia Tech Intellectual Properties, Inc. | Magnetoelectric magnetic field sensor with longitudinally biased magnetostrictive layer |
JP4573736B2 (ja) * | 2005-08-31 | 2010-11-04 | 三菱電機株式会社 | 磁界検出装置 |
-
2004
- 2004-09-22 EP EP04788007A patent/EP1720027B1/de not_active Expired - Fee Related
- 2004-09-22 US US10/589,246 patent/US7375516B2/en active Active
- 2004-09-22 WO PCT/JP2004/013824 patent/WO2005081007A1/ja active Application Filing
- 2004-09-22 DE DE602004030160T patent/DE602004030160D1/de active Active
- 2004-09-22 JP JP2006510157A patent/JP4513804B2/ja not_active Expired - Fee Related
- 2004-09-22 CN CNB2004800418676A patent/CN100541222C/zh not_active Expired - Fee Related
-
2008
- 2008-04-04 US US12/098,291 patent/US7508203B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP4513804B2 (ja) | 2010-07-28 |
US7375516B2 (en) | 2008-05-20 |
EP1720027B1 (de) | 2010-11-17 |
US20080186635A1 (en) | 2008-08-07 |
US20070165334A1 (en) | 2007-07-19 |
CN1918477A (zh) | 2007-02-21 |
EP1720027A4 (de) | 2009-04-01 |
CN100541222C (zh) | 2009-09-16 |
EP1720027A1 (de) | 2006-11-08 |
JPWO2005081007A1 (ja) | 2008-01-10 |
WO2005081007A1 (ja) | 2005-09-01 |
US7508203B2 (en) | 2009-03-24 |
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