JP6142813B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6142813B2
JP6142813B2 JP2014023867A JP2014023867A JP6142813B2 JP 6142813 B2 JP6142813 B2 JP 6142813B2 JP 2014023867 A JP2014023867 A JP 2014023867A JP 2014023867 A JP2014023867 A JP 2014023867A JP 6142813 B2 JP6142813 B2 JP 6142813B2
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JP
Japan
Prior art keywords
region
diode
igbt
sense
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014023867A
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English (en)
Japanese (ja)
Other versions
JP2015153785A (ja
JP2015153785A5 (enExample
Inventor
圭佑 木村
圭佑 木村
亀山　悟
悟 亀山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP2014023867A priority Critical patent/JP6142813B2/ja
Priority to CN201480075282.XA priority patent/CN106030797B/zh
Priority to PCT/JP2014/073676 priority patent/WO2015118714A1/ja
Priority to EP14882078.0A priority patent/EP3107123B1/en
Priority to US15/104,073 priority patent/US9972707B2/en
Publication of JP2015153785A publication Critical patent/JP2015153785A/ja
Publication of JP2015153785A5 publication Critical patent/JP2015153785A5/ja
Application granted granted Critical
Publication of JP6142813B2 publication Critical patent/JP6142813B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2014023867A 2014-02-10 2014-02-10 半導体装置 Expired - Fee Related JP6142813B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014023867A JP6142813B2 (ja) 2014-02-10 2014-02-10 半導体装置
CN201480075282.XA CN106030797B (zh) 2014-02-10 2014-09-08 半导体装置
PCT/JP2014/073676 WO2015118714A1 (ja) 2014-02-10 2014-09-08 半導体装置
EP14882078.0A EP3107123B1 (en) 2014-02-10 2014-09-08 Semiconductor device
US15/104,073 US9972707B2 (en) 2014-02-10 2014-09-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014023867A JP6142813B2 (ja) 2014-02-10 2014-02-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2015153785A JP2015153785A (ja) 2015-08-24
JP2015153785A5 JP2015153785A5 (enExample) 2016-04-07
JP6142813B2 true JP6142813B2 (ja) 2017-06-07

Family

ID=53777534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014023867A Expired - Fee Related JP6142813B2 (ja) 2014-02-10 2014-02-10 半導体装置

Country Status (5)

Country Link
US (1) US9972707B2 (enExample)
EP (1) EP3107123B1 (enExample)
JP (1) JP6142813B2 (enExample)
CN (1) CN106030797B (enExample)
WO (1) WO2015118714A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017208735A1 (ja) * 2016-06-03 2017-12-07 富士電機株式会社 半導体装置
JP2018129358A (ja) 2017-02-07 2018-08-16 ルネサスエレクトロニクス株式会社 電流検出装置、負荷駆動システム、及び、電流検出装置の製造方法
JP6804379B2 (ja) * 2017-04-24 2020-12-23 三菱電機株式会社 半導体装置
JP7151084B2 (ja) * 2018-01-11 2022-10-12 株式会社デンソー 半導体装置
US12068312B2 (en) 2019-03-22 2024-08-20 Hitachi Energy Ltd Reverse conducting insulated gate power semiconductor device having low conduction losses
JP7363079B2 (ja) * 2019-04-15 2023-10-18 富士電機株式会社 半導体装置
JP7224247B2 (ja) * 2019-07-02 2023-02-17 三菱電機株式会社 半導体装置
JP7332543B2 (ja) * 2020-07-07 2023-08-23 三菱電機株式会社 半導体装置
US12426287B2 (en) * 2020-09-16 2025-09-23 Kabushiki Kaisha Toshiba Semiconductor device
CN117242580A (zh) * 2021-04-26 2023-12-15 三菱电机株式会社 半导体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
JPH10261704A (ja) * 1997-03-18 1998-09-29 Toyota Motor Corp 半導体装置及びその製造方法
JP4761644B2 (ja) * 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
JP3739376B2 (ja) * 2003-12-08 2006-01-25 株式会社ルネサステクノロジ 半導体装置
EP2003694B1 (en) * 2007-06-14 2011-11-23 Denso Corporation Semiconductor device
DE102008045410B4 (de) 2007-09-05 2019-07-11 Denso Corporation Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode
JP4506808B2 (ja) * 2007-10-15 2010-07-21 株式会社デンソー 半導体装置
JP4877337B2 (ja) 2009-02-17 2012-02-15 トヨタ自動車株式会社 半導体装置
JP2011082220A (ja) * 2009-10-02 2011-04-21 Toyota Motor Corp 半導体装置
JP5499692B2 (ja) * 2009-12-24 2014-05-21 トヨタ自動車株式会社 半導体装置及びその製造方法
CN102884625B (zh) 2010-05-07 2014-11-19 丰田自动车株式会社 半导体装置
JP5668499B2 (ja) 2011-01-27 2015-02-12 株式会社デンソー 半導体装置
DE102011076610A1 (de) 2010-06-04 2011-12-08 Denso Corporation Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung
JP2013201237A (ja) 2012-03-23 2013-10-03 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
EP3107123B1 (en) 2018-11-28
CN106030797A (zh) 2016-10-12
US20160372584A1 (en) 2016-12-22
US9972707B2 (en) 2018-05-15
EP3107123A4 (en) 2017-02-22
WO2015118714A1 (ja) 2015-08-13
JP2015153785A (ja) 2015-08-24
CN106030797B (zh) 2019-03-12
EP3107123A1 (en) 2016-12-21

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