CN106030797B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN106030797B
CN106030797B CN201480075282.XA CN201480075282A CN106030797B CN 106030797 B CN106030797 B CN 106030797B CN 201480075282 A CN201480075282 A CN 201480075282A CN 106030797 B CN106030797 B CN 106030797B
Authority
CN
China
Prior art keywords
region
area
diode
sensing
igbt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480075282.XA
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English (en)
Chinese (zh)
Other versions
CN106030797A (zh
Inventor
木村圭佑
龟山悟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of CN106030797A publication Critical patent/CN106030797A/zh
Application granted granted Critical
Publication of CN106030797B publication Critical patent/CN106030797B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201480075282.XA 2014-02-10 2014-09-08 半导体装置 Expired - Fee Related CN106030797B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014023867A JP6142813B2 (ja) 2014-02-10 2014-02-10 半導体装置
JP2014-023867 2014-02-10
PCT/JP2014/073676 WO2015118714A1 (ja) 2014-02-10 2014-09-08 半導体装置

Publications (2)

Publication Number Publication Date
CN106030797A CN106030797A (zh) 2016-10-12
CN106030797B true CN106030797B (zh) 2019-03-12

Family

ID=53777534

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480075282.XA Expired - Fee Related CN106030797B (zh) 2014-02-10 2014-09-08 半导体装置

Country Status (5)

Country Link
US (1) US9972707B2 (enExample)
EP (1) EP3107123B1 (enExample)
JP (1) JP6142813B2 (enExample)
CN (1) CN106030797B (enExample)
WO (1) WO2015118714A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6795032B2 (ja) * 2016-06-03 2020-12-02 富士電機株式会社 半導体装置
JP2018129358A (ja) 2017-02-07 2018-08-16 ルネサスエレクトロニクス株式会社 電流検出装置、負荷駆動システム、及び、電流検出装置の製造方法
JP6804379B2 (ja) 2017-04-24 2020-12-23 三菱電機株式会社 半導体装置
JP7151084B2 (ja) * 2018-01-11 2022-10-12 株式会社デンソー 半導体装置
JP7084558B2 (ja) * 2019-03-22 2022-06-14 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 導通損失の少ない逆導通絶縁ゲートパワー半導体デバイス
JP7363079B2 (ja) * 2019-04-15 2023-10-18 富士電機株式会社 半導体装置
JP7224247B2 (ja) * 2019-07-02 2023-02-17 三菱電機株式会社 半導体装置
JP7332543B2 (ja) * 2020-07-07 2023-08-23 三菱電機株式会社 半導体装置
US12426287B2 (en) * 2020-09-16 2025-09-23 Kabushiki Kaisha Toshiba Semiconductor device
DE112021007588T5 (de) * 2021-04-26 2024-02-15 Mitsubishi Electric Corporation Halbleitervorrichtung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020153586A1 (en) * 2001-04-18 2002-10-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
CN101414816A (zh) * 2007-09-05 2009-04-22 株式会社电装 具有内置二极管igbt的半导体器件和具有内置二极管dmos的半导体器件
JP2011134861A (ja) * 2009-12-24 2011-07-07 Toyota Motor Corp 半導体装置及びその製造方法
CN103325786A (zh) * 2012-03-23 2013-09-25 株式会社东芝 半导体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
JPH10261704A (ja) * 1997-03-18 1998-09-29 Toyota Motor Corp 半導体装置及びその製造方法
JP3739376B2 (ja) * 2003-12-08 2006-01-25 株式会社ルネサステクノロジ 半導体装置
EP2003694B1 (en) * 2007-06-14 2011-11-23 Denso Corporation Semiconductor device
JP4506808B2 (ja) * 2007-10-15 2010-07-21 株式会社デンソー 半導体装置
JP4877337B2 (ja) 2009-02-17 2012-02-15 トヨタ自動車株式会社 半導体装置
JP2011082220A (ja) * 2009-10-02 2011-04-21 Toyota Motor Corp 半導体装置
DE112010005546B4 (de) * 2010-05-07 2015-08-27 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung
DE102011076610A1 (de) 2010-06-04 2011-12-08 Denso Corporation Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung
JP5668499B2 (ja) 2011-01-27 2015-02-12 株式会社デンソー 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020153586A1 (en) * 2001-04-18 2002-10-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
CN101414816A (zh) * 2007-09-05 2009-04-22 株式会社电装 具有内置二极管igbt的半导体器件和具有内置二极管dmos的半导体器件
JP2011134861A (ja) * 2009-12-24 2011-07-07 Toyota Motor Corp 半導体装置及びその製造方法
CN103325786A (zh) * 2012-03-23 2013-09-25 株式会社东芝 半导体装置

Also Published As

Publication number Publication date
EP3107123A4 (en) 2017-02-22
US20160372584A1 (en) 2016-12-22
WO2015118714A1 (ja) 2015-08-13
EP3107123A1 (en) 2016-12-21
CN106030797A (zh) 2016-10-12
JP6142813B2 (ja) 2017-06-07
EP3107123B1 (en) 2018-11-28
JP2015153785A (ja) 2015-08-24
US9972707B2 (en) 2018-05-15

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Effective date of registration: 20200408

Address after: Aichi Prefecture, Japan

Patentee after: DENSO Corp.

Address before: Aichi Prefecture, Japan

Patentee before: Toyota Motor Corp.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190312

CF01 Termination of patent right due to non-payment of annual fee