JP6139968B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6139968B2
JP6139968B2 JP2013099643A JP2013099643A JP6139968B2 JP 6139968 B2 JP6139968 B2 JP 6139968B2 JP 2013099643 A JP2013099643 A JP 2013099643A JP 2013099643 A JP2013099643 A JP 2013099643A JP 6139968 B2 JP6139968 B2 JP 6139968B2
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Japan
Prior art keywords
insulating layer
layer
oxide
film
oxide semiconductor
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JP2013099643A
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Japanese (ja)
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JP2013254950A5 (https=
JP2013254950A (ja
Inventor
山崎　舜平
舜平 山崎
宮本　敏行
敏行 宮本
野村　昌史
昌史 野村
貴士 羽持
貴士 羽持
岡崎　健一
健一 岡崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013099643A priority Critical patent/JP6139968B2/ja
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Publication of JP2013254950A5 publication Critical patent/JP2013254950A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2013099643A 2012-05-10 2013-05-09 半導体装置 Active JP6139968B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013099643A JP6139968B2 (ja) 2012-05-10 2013-05-09 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012108899 2012-05-10
JP2012108899 2012-05-10
JP2013099643A JP6139968B2 (ja) 2012-05-10 2013-05-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017080210A Division JP6409089B2 (ja) 2012-05-10 2017-04-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2013254950A JP2013254950A (ja) 2013-12-19
JP2013254950A5 JP2013254950A5 (https=) 2016-04-28
JP6139968B2 true JP6139968B2 (ja) 2017-05-31

Family

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Family Applications (8)

Application Number Title Priority Date Filing Date
JP2013099643A Active JP6139968B2 (ja) 2012-05-10 2013-05-09 半導体装置
JP2017080210A Active JP6409089B2 (ja) 2012-05-10 2017-04-14 半導体装置
JP2018176852A Active JP6700356B2 (ja) 2012-05-10 2018-09-21 半導体装置
JP2020079953A Withdrawn JP2020120135A (ja) 2012-05-10 2020-04-30 半導体装置
JP2022030853A Active JP7353405B2 (ja) 2012-05-10 2022-03-01 半導体装置
JP2023150754A Active JP7513821B2 (ja) 2012-05-10 2023-09-19 半導体装置
JP2024103501A Active JP7693910B2 (ja) 2012-05-10 2024-06-27 半導体装置
JP2025093833A Pending JP2025120289A (ja) 2012-05-10 2025-06-05 半導体装置

Family Applications After (7)

Application Number Title Priority Date Filing Date
JP2017080210A Active JP6409089B2 (ja) 2012-05-10 2017-04-14 半導体装置
JP2018176852A Active JP6700356B2 (ja) 2012-05-10 2018-09-21 半導体装置
JP2020079953A Withdrawn JP2020120135A (ja) 2012-05-10 2020-04-30 半導体装置
JP2022030853A Active JP7353405B2 (ja) 2012-05-10 2022-03-01 半導体装置
JP2023150754A Active JP7513821B2 (ja) 2012-05-10 2023-09-19 半導体装置
JP2024103501A Active JP7693910B2 (ja) 2012-05-10 2024-06-27 半導体装置
JP2025093833A Pending JP2025120289A (ja) 2012-05-10 2025-06-05 半導体装置

Country Status (5)

Country Link
US (3) US9159837B2 (https=)
JP (8) JP6139968B2 (https=)
KR (7) KR102222438B1 (https=)
TW (5) TWI777675B (https=)
WO (1) WO2013168624A1 (https=)

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JP6584196B2 (ja) * 2015-07-31 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
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JP6783573B2 (ja) * 2016-07-22 2020-11-11 株式会社ジャパンディスプレイ 表示装置
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JP2020053475A (ja) 2018-09-25 2020-04-02 株式会社ジャパンディスプレイ 薄膜トランジスタ及び表示装置
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CN111244119B (zh) * 2019-12-13 2024-09-10 京东方科技集团股份有限公司 一种探测基板、其制作方法及平板探测器
JP2021141197A (ja) 2020-03-05 2021-09-16 株式会社ジャパンディスプレイ 半導体装置、および表示装置
JP7610936B2 (ja) 2020-08-07 2025-01-09 株式会社ジャパンディスプレイ 表示装置
JP7524040B2 (ja) 2020-11-24 2024-07-29 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP7551509B2 (ja) 2021-01-07 2024-09-17 株式会社ジャパンディスプレイ 半導体装置及び表示装置
CN116868702A (zh) 2021-01-27 2023-10-10 华为技术有限公司 半导体器件及其制造方法以及显示设备
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JP7646412B2 (ja) 2021-03-26 2025-03-17 株式会社ジャパンディスプレイ 表示装置
JP7650739B2 (ja) 2021-07-08 2025-03-25 株式会社ジャパンディスプレイ 半導体装置
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