WO2008139669A1 - 薄膜トランジスタの製造方法及び薄膜トランジスタ - Google Patents

薄膜トランジスタの製造方法及び薄膜トランジスタ Download PDF

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Publication number
WO2008139669A1
WO2008139669A1 PCT/JP2008/000489 JP2008000489W WO2008139669A1 WO 2008139669 A1 WO2008139669 A1 WO 2008139669A1 JP 2008000489 W JP2008000489 W JP 2008000489W WO 2008139669 A1 WO2008139669 A1 WO 2008139669A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulation film
semiconductor layer
thin film
film transistor
film
Prior art date
Application number
PCT/JP2008/000489
Other languages
English (en)
French (fr)
Inventor
Makoto Nakazawa
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008139669A1 publication Critical patent/WO2008139669A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

　基板（１０）に半導体層（１２）を形成する半導体層形成工程と、半導体層（１２）を覆うように第１絶縁膜、第２絶縁膜及び導電膜を順に成膜する積層膜形成工程と、導電膜をパターニングして半導体層（１２）を横切るようにゲート電極（２１ａ）を形成するゲート電極形成工程と、第２絶縁膜を周端がゲート電極（２１ａ）よりも外側になると共に半導体層（１２）を横切るようにエッチングする第２絶縁膜除去工程と、第２絶縁膜除去工程でエッチングされた第２絶縁膜から露出する第１絶縁膜をエッチングして半導体層（１２）の一部を露出させる第１絶縁膜除去工程とを備える。
PCT/JP2008/000489 2007-05-14 2008-03-07 薄膜トランジスタの製造方法及び薄膜トランジスタ WO2008139669A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-127734 2007-05-14
JP2007127734 2007-05-14

Publications (1)

Publication Number Publication Date
WO2008139669A1 true WO2008139669A1 (ja) 2008-11-20

Family

ID=40001895

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000489 WO2008139669A1 (ja) 2007-05-14 2008-03-07 薄膜トランジスタの製造方法及び薄膜トランジスタ

Country Status (1)

Country Link
WO (1) WO2008139669A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI836583B (zh) 2012-05-10 2024-03-21 日商半導體能源研究所股份有限公司 半導體裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161994A (ja) * 1993-12-07 1995-06-23 Sony Corp 薄膜トランジスタの製造方法
JPH10209461A (ja) * 1997-01-27 1998-08-07 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法
JP2000124461A (ja) * 1998-10-20 2000-04-28 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161994A (ja) * 1993-12-07 1995-06-23 Sony Corp 薄膜トランジスタの製造方法
JPH10209461A (ja) * 1997-01-27 1998-08-07 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法
JP2000124461A (ja) * 1998-10-20 2000-04-28 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI836583B (zh) 2012-05-10 2024-03-21 日商半導體能源研究所股份有限公司 半導體裝置

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