JP6125192B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6125192B2 JP6125192B2 JP2012235500A JP2012235500A JP6125192B2 JP 6125192 B2 JP6125192 B2 JP 6125192B2 JP 2012235500 A JP2012235500 A JP 2012235500A JP 2012235500 A JP2012235500 A JP 2012235500A JP 6125192 B2 JP6125192 B2 JP 6125192B2
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- film
- oxide semiconductor
- semiconductor film
- insulating film
- oxide
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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Description
本実施の形態では、半導体装置、及び半導体装置の作製方法の一形態を、図1乃至図3を用いて説明する。
図1(A)、及び図1(B)に、半導体装置の一例として、トップゲート構造のトランジスタの平面図および断面図を示す。図1(A)は平面図であり、図1(B)は、図1(A)におけるX1−Y1に係る断面図に相当する。なお、図1(A)では、煩雑になることを避けるため、トランジスタ150の構成要素の一部(例えば、ゲート絶縁膜108など)を省略している。
以下、図2、及び図3を用いて、本実施の形態に係る図1に示すトランジスタ150の作製方法の一例について説明する。
本実施の形態においては、実施の形態1の図1乃至図3に示した半導体装置、及び半導体装置の作製方法の変形例について、図4乃至図6を用いて説明を行う。なお、図1乃至図3で示した符号については、同様の符号を用い、その繰り返しの説明は省略する。
図4(A)、及び図4(B)に、半導体装置の一例として、トップゲート構造のトランジスタの平面図、および断面図を示す。図4(A)は平面図であり、図4(B)は、図4(A)におけるX2−Y2に係る断面図に相当する。なお、図4(A)では、煩雑になることを避けるため、トランジスタ160の構成要素の一部(例えば、ゲート絶縁膜108など)を省略している。
以下、図5、及び図6を用いて、本実施の形態に係る図4に示すトランジスタ160の作製方法の一例について説明する。
本実施の形態では、本明細書に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本実施の形態においては、実施の形態1、または実施の形態2に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態3に示した構成と異なる構成について、図8、及び図9を用いて説明を行う。
本実施の形態では、先の実施の形態で示した半導体装置を携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図10乃至図13を用いて説明する。
ガラス基板上にターゲットCを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=10sccm/5sccm(O2=33%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料1と、ガラス基板上にターゲットCを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料2と、ガラス基板上にターゲットAを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=10sccm/5sccm(O2=33%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料3と、ガラス基板上にターゲットAを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料4と、ガラス基板上にターゲットBを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=10sccm/5sccm(O2=33%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料5と、ガラス基板上にターゲットBを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料6と、をそれぞれ作製した。
ガラス基板上にターゲットAを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成した試料7と、ガラス基板上にターゲットBを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成した試料8と、をそれぞれ作製した。
ガラス基板上にターゲットAを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成した試料9と、ガラス基板上にターゲットAを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料10と、ガラス基板上にターゲットAを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の650℃の熱処理を実施し、続けて酸素雰囲気中で1時間の650℃の熱処理を実施した試料11と、ガラス基板上にターゲットBを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成した試料12と、ガラス基板上にターゲットBを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の450℃の熱処理を実施し、続けて酸素雰囲気中で1時間の450℃の熱処理を実施した試料13と、ガラス基板上にターゲットBを用いてスパッタリング法にて、電力=100W、圧力=0.4Pa、基板温度=200℃、Ar/O2=0sccm/15sccm(O2=100%)の条件下で酸化物半導体膜を形成し、その後、窒素雰囲気中で1時間の650℃の熱処理を実施し、続けて酸素雰囲気中で1時間の650℃の熱処理を実施した試料14と、をそれぞれ作製した。
104 下地絶縁膜
106 酸化物半導体膜
106a 領域
106b 領域
106c 領域
106d 領域
106e 領域
106f 領域
107 絶縁膜
108 ゲート絶縁膜
109 導電膜
110 ゲート電極
112a ソース電極
112b ドレイン電極
114 絶縁膜
150 トランジスタ
160 トランジスタ
181 ドーパント
182 導電膜
184 絶縁膜
186 配線
200 基板
201 シリコン基板
202 酸化シリコン膜
204 IGZO膜
206 素子分離絶縁膜
208 ゲート絶縁膜
210 ゲート電極
216 チャネル形成領域
220 不純物領域
224 金属間化合物領域
228 絶縁膜
230 絶縁膜
256 絶縁層
260 トランジスタ
262 導電層
264 容量素子
272 配線
274 下地絶縁膜
300 ガラス基板
302 酸化窒化シリコン膜
304 IGZO膜
350 メモリセル
351a メモリセルアレイ
351b メモリセルアレイ
353 周辺回路
354 容量素子
801 トランジスタ
803 トランジスタ
804 トランジスタ
805 トランジスタ
806 トランジスタ
807 Xデコーダー
808 Yデコーダー
811 トランジスタ
812 保持容量
813 Xデコーダー
814 Yデコーダー
901 RF回路
902 アナログベースバンド回路
903 デジタルベースバンド回路
904 バッテリー
905 電源回路
906 アプリケーションプロセッサ
907 CPU
908 DSP
909 インターフェイス
910 フラッシュメモリ
911 ディスプレイコントローラ
912 メモリ回路
913 ディスプレイ
914 表示部
915 ソースドライバ
916 ゲートドライバ
917 音声回路
918 キーボード
919 タッチセンサ
950 メモリ回路
951 メモリコントローラ
952 メモリ
953 メモリ
954 スイッチ
955 スイッチ
956 ディスプレイコントローラ
957 ディスプレイ
1001 バッテリー
1002 電源回路
1003 マイクロプロセッサ
1004 フラッシュメモリ
1005 音声回路
1006 キーボード
1007 メモリ回路
1008 タッチパネル
1009 ディスプレイ
1010 ディスプレイコントローラ
Claims (3)
- シリコンを含む絶縁膜と、
前記絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のゲート絶縁膜と、
前記ゲート絶縁膜上の、少なくとも前記酸化物半導体膜と重畳するゲート電極と、を有し、
前記酸化物半導体膜は、第1の領域と、第2の領域とを有し、
前記第1の領域は、前記第2の領域よりも前記絶縁膜側に位置し、
前記第1の領域に含まれるシリコンの濃度は、1.0原子%以下であり、
前記第2の領域に含まれるシリコンの濃度は、前記第1の領域に含まれるシリコンの濃度よりも小さく、
前記酸化物半導体膜は、前記酸化物半導体膜の被形成面に垂直な方向と沿うようにc軸配向した結晶部を含む半導体装置。 - 請求項1において、
前記第1の領域は、シリコン濃度が0.1原子%以下である半導体装置。 - 請求項1または請求項2において、
前記第1の領域は、炭素濃度が1.0×1020atoms/cm3以下である半導体装置。
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CN102760697B (zh) | 2011-04-27 | 2016-08-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
KR102128369B1 (ko) | 2011-09-29 | 2020-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN105514174B (zh) * | 2011-09-29 | 2019-03-08 | 株式会社半导体能源研究所 | 半导体器件 |
CN107068765B (zh) | 2011-10-14 | 2021-03-09 | 株式会社半导体能源研究所 | 半导体装置 |
KR20130040706A (ko) * | 2011-10-14 | 2013-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP6082562B2 (ja) * | 2011-10-27 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015056566A (ja) * | 2013-09-13 | 2015-03-23 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ、表示装置用電極基板およびそれらの製造方法 |
WO2015115330A1 (ja) * | 2014-01-31 | 2015-08-06 | 独立行政法人物質・材料研究機構 | 薄膜トランジスタ、酸化物半導体、およびその製造方法 |
US9929279B2 (en) | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20150111550A (ko) * | 2014-03-25 | 2015-10-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN104201111A (zh) * | 2014-09-18 | 2014-12-10 | 六安市华海电子器材科技有限公司 | 一种氧化物半导体薄膜晶体管的制备方法 |
US9633710B2 (en) | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
JP7126823B2 (ja) | 2016-12-23 | 2022-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN107146816B (zh) * | 2017-04-10 | 2020-05-15 | 华南理工大学 | 一种氧化物半导体薄膜及由其制备的薄膜晶体管 |
JP7268027B2 (ja) | 2018-07-27 | 2023-05-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11379231B2 (en) | 2019-10-25 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing system and operation method of data processing system |
CN112635572A (zh) * | 2020-12-24 | 2021-04-09 | 广东省科学院半导体研究所 | 薄膜晶体管及其制备方法和显示器件 |
Family Cites Families (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
KR100394896B1 (ko) | 1995-08-03 | 2003-11-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 투명스위칭소자를포함하는반도체장치 |
JP3625330B2 (ja) | 1995-12-26 | 2005-03-02 | フィガロ技研株式会社 | ガスセンサ |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
AU2005302962B2 (en) | 2004-11-10 | 2009-05-07 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
KR100911698B1 (ko) | 2004-11-10 | 2009-08-10 | 캐논 가부시끼가이샤 | 비정질 산화물을 사용한 전계 효과 트랜지스터 |
JP5138163B2 (ja) * | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
JP5126729B2 (ja) | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 画像表示装置 |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI481024B (zh) | 2005-01-28 | 2015-04-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR20090130089A (ko) | 2005-11-15 | 2009-12-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 다이오드 및 액티브 매트릭스 표시장치 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5242083B2 (ja) | 2007-06-13 | 2013-07-24 | 出光興産株式会社 | 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ |
JP5393058B2 (ja) | 2007-09-05 | 2014-01-22 | キヤノン株式会社 | 電界効果型トランジスタ |
JP2009085944A (ja) | 2007-09-11 | 2009-04-23 | Yamaha Motor Co Ltd | ガスセンサ、空燃比制御装置および輸送機器 |
WO2009075281A1 (ja) * | 2007-12-13 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP4555358B2 (ja) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
KR100941850B1 (ko) | 2008-04-03 | 2010-02-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP5345456B2 (ja) | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
KR101622981B1 (ko) | 2008-09-19 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 제조방법 |
JP5430113B2 (ja) * | 2008-10-08 | 2014-02-26 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5538797B2 (ja) * | 2008-12-12 | 2014-07-02 | キヤノン株式会社 | 電界効果型トランジスタ及び表示装置 |
KR101648927B1 (ko) | 2009-01-16 | 2016-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US8492756B2 (en) | 2009-01-23 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5606682B2 (ja) | 2009-01-29 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 |
JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP4571221B1 (ja) | 2009-06-22 | 2010-10-27 | 富士フイルム株式会社 | Igzo系酸化物材料及びigzo系酸化物材料の製造方法 |
US20130105788A1 (en) * | 2009-09-07 | 2013-05-02 | Sharp Kabushiki Kaisha | Oxide semiconductor, thin film transistor, and display device |
EP3540772A1 (en) * | 2009-09-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
KR101810383B1 (ko) * | 2009-09-24 | 2017-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
JP5237917B2 (ja) | 2009-10-30 | 2013-07-17 | スタンレー電気株式会社 | ZnO系化合物半導体の製造方法 |
WO2011058882A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and manufacturing method thereof, and transistor |
KR102138547B1 (ko) * | 2009-11-13 | 2020-07-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR101396015B1 (ko) * | 2009-11-28 | 2014-05-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20210043743A (ko) * | 2009-12-04 | 2021-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
WO2011070887A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
KR101768433B1 (ko) * | 2009-12-18 | 2017-08-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102167820B1 (ko) * | 2009-12-25 | 2020-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 장치 |
JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
WO2011089832A1 (en) * | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving display device and liquid crystal display device |
US8617920B2 (en) * | 2010-02-12 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011099368A1 (en) * | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
JP2011169757A (ja) | 2010-02-18 | 2011-09-01 | Taiyo Yuden Co Ltd | 抵抗型酸素センサ素子 |
JP2011187506A (ja) | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2011205017A (ja) | 2010-03-26 | 2011-10-13 | Dainippon Printing Co Ltd | 薄膜トランジスタ、薄膜集積回路装置及びそれらの製造方法 |
JP2012124446A (ja) * | 2010-04-07 | 2012-06-28 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
US8912537B2 (en) * | 2010-04-23 | 2014-12-16 | Hitachi, Ltd. | Semiconductor device, RFID tag using the same and display device |
JP2012160679A (ja) | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
KR102128369B1 (ko) | 2011-09-29 | 2020-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN105514174B (zh) | 2011-09-29 | 2019-03-08 | 株式会社半导体能源研究所 | 半导体器件 |
CN107068765B (zh) | 2011-10-14 | 2021-03-09 | 株式会社半导体能源研究所 | 半导体装置 |
KR20130040706A (ko) | 2011-10-14 | 2013-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP6082562B2 (ja) | 2011-10-27 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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JP6490854B2 (ja) | 2019-03-27 |
KR20130046357A (ko) | 2013-05-07 |
KR20190105544A (ko) | 2019-09-17 |
JP6707684B2 (ja) | 2020-06-10 |
US9105734B2 (en) | 2015-08-11 |
JP2020145463A (ja) | 2020-09-10 |
US8698214B2 (en) | 2014-04-15 |
KR102113427B1 (ko) | 2020-05-20 |
JP2018129524A (ja) | 2018-08-16 |
US20130105865A1 (en) | 2013-05-02 |
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