JP6115505B2 - 電子装置 - Google Patents
電子装置 Download PDFInfo
- Publication number
- JP6115505B2 JP6115505B2 JP2014065942A JP2014065942A JP6115505B2 JP 6115505 B2 JP6115505 B2 JP 6115505B2 JP 2014065942 A JP2014065942 A JP 2014065942A JP 2014065942 A JP2014065942 A JP 2014065942A JP 6115505 B2 JP6115505 B2 JP 6115505B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mold resin
- electronic device
- mold
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Dicing (AREA)
- Geometry (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014065942A JP6115505B2 (ja) | 2013-06-21 | 2014-03-27 | 電子装置 |
| US14/894,637 US9941182B2 (en) | 2013-06-21 | 2014-06-03 | Electronic device and method for manufacturing same |
| PCT/JP2014/002924 WO2014203477A1 (ja) | 2013-06-21 | 2014-06-03 | 電子装置およびその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013130304 | 2013-06-21 | ||
| JP2013130304 | 2013-06-21 | ||
| JP2014065942A JP6115505B2 (ja) | 2013-06-21 | 2014-03-27 | 電子装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015026811A JP2015026811A (ja) | 2015-02-05 |
| JP2015026811A5 JP2015026811A5 (enExample) | 2015-10-15 |
| JP6115505B2 true JP6115505B2 (ja) | 2017-04-19 |
Family
ID=52104229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014065942A Active JP6115505B2 (ja) | 2013-06-21 | 2014-03-27 | 電子装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9941182B2 (enExample) |
| JP (1) | JP6115505B2 (enExample) |
| WO (1) | WO2014203477A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6194804B2 (ja) | 2014-01-23 | 2017-09-13 | 株式会社デンソー | モールドパッケージ |
| WO2018202615A1 (en) * | 2017-05-02 | 2018-11-08 | Abb Schweiz Ag | Resin encapsulated power semiconductor module with exposed terminal areas |
| KR102825809B1 (ko) * | 2020-07-10 | 2025-06-27 | 삼성전자주식회사 | 언더필이 구비된 반도체 패키지 및 이의 제조 방법 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01175240A (ja) | 1987-12-28 | 1989-07-11 | Sharp Corp | 半導体チップの製造方法 |
| US5834336A (en) * | 1996-03-12 | 1998-11-10 | Texas Instruments Incorporated | Backside encapsulation of tape automated bonding device |
| JP3569386B2 (ja) | 1996-05-27 | 2004-09-22 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法およびそれにより得られるモジュール基板ならびに電子機器 |
| DE19640304C2 (de) * | 1996-09-30 | 2000-10-12 | Siemens Ag | Chipmodul insbesondere zur Implantation in einen Chipkartenkörper |
| JP3859318B2 (ja) | 1997-08-29 | 2006-12-20 | シチズン電子株式会社 | 電子回路のパッケージ方法 |
| JP2000040711A (ja) | 1998-07-23 | 2000-02-08 | Sony Corp | 樹脂封止型半導体装置とその製造方法 |
| JP2002110718A (ja) | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2002190565A (ja) | 2000-12-20 | 2002-07-05 | Taiyo Yuden Co Ltd | ハイブリッドic及びその製造方法 |
| JP3820991B2 (ja) * | 2002-01-08 | 2006-09-13 | 日立電線株式会社 | 半導体装置及びその製造方法 |
| JP2005161695A (ja) * | 2003-12-03 | 2005-06-23 | Towa Corp | 樹脂封止装置及び樹脂封止方法 |
| JP4477976B2 (ja) * | 2004-09-30 | 2010-06-09 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| WO2006129926A1 (en) | 2005-06-02 | 2006-12-07 | Tsp Co., Ltd. | Mold for manufacturing semiconductor device and semiconductor device manufactred using the same |
| JP2007109831A (ja) | 2005-10-13 | 2007-04-26 | Towa Corp | 電子部品の樹脂封止成形方法 |
| FR2893764B1 (fr) * | 2005-11-21 | 2008-06-13 | St Microelectronics Sa | Boitier semi-conducteur empilable et procede pour sa fabrication |
| JP2007281207A (ja) | 2006-04-07 | 2007-10-25 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP4836661B2 (ja) * | 2006-05-17 | 2011-12-14 | Towa株式会社 | 電子部品の樹脂封止成形方法及び樹脂封止成形用金型 |
| JP4376884B2 (ja) * | 2006-09-20 | 2009-12-02 | シャープ株式会社 | 半導体装置及び、半導体装置の製造方法 |
| JP2008082768A (ja) | 2006-09-26 | 2008-04-10 | Kobe Steel Ltd | 熱式流量センサ |
| TWI336502B (en) * | 2006-09-27 | 2011-01-21 | Advanced Semiconductor Eng | Semiconductor package and semiconductor device and the method of making the same |
| JP4926869B2 (ja) | 2007-07-26 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5157456B2 (ja) * | 2008-01-08 | 2013-03-06 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2009170476A (ja) * | 2008-01-11 | 2009-07-30 | Panasonic Corp | 半導体装置および半導体装置の製造方法 |
| DE102008052393B3 (de) | 2008-10-21 | 2010-02-25 | Continental Automotive Gmbh | Massenstromsensorvorrichtung |
| JP2011077199A (ja) * | 2009-09-29 | 2011-04-14 | Sumitomo Bakelite Co Ltd | 半導体パッケージおよび半導体装置 |
| JP2012238725A (ja) | 2011-05-12 | 2012-12-06 | Toshiba Corp | 半導体装置とその製造方法、およびそれを用いた半導体モジュール |
| JP5419230B2 (ja) * | 2011-08-01 | 2014-02-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN102931105A (zh) | 2011-08-10 | 2013-02-13 | 飞思卡尔半导体公司 | 半导体器件管芯键合 |
| JP5994613B2 (ja) * | 2012-12-05 | 2016-09-21 | 株式会社デンソー | 電子装置の取付構造体 |
| CN106158778B (zh) * | 2015-03-12 | 2020-07-17 | 恩智浦美国有限公司 | 具有侧面接触垫和底部接触垫的集成电路封装 |
| US9443830B1 (en) * | 2015-06-09 | 2016-09-13 | Apple Inc. | Printed circuits with embedded semiconductor dies |
-
2014
- 2014-03-27 JP JP2014065942A patent/JP6115505B2/ja active Active
- 2014-06-03 US US14/894,637 patent/US9941182B2/en not_active Expired - Fee Related
- 2014-06-03 WO PCT/JP2014/002924 patent/WO2014203477A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US9941182B2 (en) | 2018-04-10 |
| JP2015026811A (ja) | 2015-02-05 |
| US20160104653A1 (en) | 2016-04-14 |
| WO2014203477A1 (ja) | 2014-12-24 |
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