JP6115505B2 - 電子装置 - Google Patents

電子装置 Download PDF

Info

Publication number
JP6115505B2
JP6115505B2 JP2014065942A JP2014065942A JP6115505B2 JP 6115505 B2 JP6115505 B2 JP 6115505B2 JP 2014065942 A JP2014065942 A JP 2014065942A JP 2014065942 A JP2014065942 A JP 2014065942A JP 6115505 B2 JP6115505 B2 JP 6115505B2
Authority
JP
Japan
Prior art keywords
substrate
mold resin
electronic device
mold
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014065942A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015026811A (ja
JP2015026811A5 (enExample
Inventor
典久 今泉
典久 今泉
祐紀 眞田
祐紀 眞田
竹中 正幸
正幸 竹中
慎也 内堀
慎也 内堀
賢吾 岡
賢吾 岡
太助 福田
太助 福田
圭太郎 中間
圭太郎 中間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2014065942A priority Critical patent/JP6115505B2/ja
Priority to US14/894,637 priority patent/US9941182B2/en
Priority to PCT/JP2014/002924 priority patent/WO2014203477A1/ja
Publication of JP2015026811A publication Critical patent/JP2015026811A/ja
Publication of JP2015026811A5 publication Critical patent/JP2015026811A5/ja
Application granted granted Critical
Publication of JP6115505B2 publication Critical patent/JP6115505B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)
  • Geometry (AREA)
JP2014065942A 2013-06-21 2014-03-27 電子装置 Active JP6115505B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014065942A JP6115505B2 (ja) 2013-06-21 2014-03-27 電子装置
US14/894,637 US9941182B2 (en) 2013-06-21 2014-06-03 Electronic device and method for manufacturing same
PCT/JP2014/002924 WO2014203477A1 (ja) 2013-06-21 2014-06-03 電子装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013130304 2013-06-21
JP2013130304 2013-06-21
JP2014065942A JP6115505B2 (ja) 2013-06-21 2014-03-27 電子装置

Publications (3)

Publication Number Publication Date
JP2015026811A JP2015026811A (ja) 2015-02-05
JP2015026811A5 JP2015026811A5 (enExample) 2015-10-15
JP6115505B2 true JP6115505B2 (ja) 2017-04-19

Family

ID=52104229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014065942A Active JP6115505B2 (ja) 2013-06-21 2014-03-27 電子装置

Country Status (3)

Country Link
US (1) US9941182B2 (enExample)
JP (1) JP6115505B2 (enExample)
WO (1) WO2014203477A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6194804B2 (ja) 2014-01-23 2017-09-13 株式会社デンソー モールドパッケージ
WO2018202615A1 (en) * 2017-05-02 2018-11-08 Abb Schweiz Ag Resin encapsulated power semiconductor module with exposed terminal areas
KR102825809B1 (ko) * 2020-07-10 2025-06-27 삼성전자주식회사 언더필이 구비된 반도체 패키지 및 이의 제조 방법

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175240A (ja) 1987-12-28 1989-07-11 Sharp Corp 半導体チップの製造方法
US5834336A (en) * 1996-03-12 1998-11-10 Texas Instruments Incorporated Backside encapsulation of tape automated bonding device
JP3569386B2 (ja) 1996-05-27 2004-09-22 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法およびそれにより得られるモジュール基板ならびに電子機器
DE19640304C2 (de) * 1996-09-30 2000-10-12 Siemens Ag Chipmodul insbesondere zur Implantation in einen Chipkartenkörper
JP3859318B2 (ja) 1997-08-29 2006-12-20 シチズン電子株式会社 電子回路のパッケージ方法
JP2000040711A (ja) 1998-07-23 2000-02-08 Sony Corp 樹脂封止型半導体装置とその製造方法
JP2002110718A (ja) 2000-09-29 2002-04-12 Hitachi Ltd 半導体装置の製造方法
JP2002190565A (ja) 2000-12-20 2002-07-05 Taiyo Yuden Co Ltd ハイブリッドic及びその製造方法
JP3820991B2 (ja) * 2002-01-08 2006-09-13 日立電線株式会社 半導体装置及びその製造方法
JP2005161695A (ja) * 2003-12-03 2005-06-23 Towa Corp 樹脂封止装置及び樹脂封止方法
JP4477976B2 (ja) * 2004-09-30 2010-06-09 株式会社ルネサステクノロジ 半導体装置の製造方法
WO2006129926A1 (en) 2005-06-02 2006-12-07 Tsp Co., Ltd. Mold for manufacturing semiconductor device and semiconductor device manufactred using the same
JP2007109831A (ja) 2005-10-13 2007-04-26 Towa Corp 電子部品の樹脂封止成形方法
FR2893764B1 (fr) * 2005-11-21 2008-06-13 St Microelectronics Sa Boitier semi-conducteur empilable et procede pour sa fabrication
JP2007281207A (ja) 2006-04-07 2007-10-25 Renesas Technology Corp 半導体装置の製造方法
JP4836661B2 (ja) * 2006-05-17 2011-12-14 Towa株式会社 電子部品の樹脂封止成形方法及び樹脂封止成形用金型
JP4376884B2 (ja) * 2006-09-20 2009-12-02 シャープ株式会社 半導体装置及び、半導体装置の製造方法
JP2008082768A (ja) 2006-09-26 2008-04-10 Kobe Steel Ltd 熱式流量センサ
TWI336502B (en) * 2006-09-27 2011-01-21 Advanced Semiconductor Eng Semiconductor package and semiconductor device and the method of making the same
JP4926869B2 (ja) 2007-07-26 2012-05-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5157456B2 (ja) * 2008-01-08 2013-03-06 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
JP2009170476A (ja) * 2008-01-11 2009-07-30 Panasonic Corp 半導体装置および半導体装置の製造方法
DE102008052393B3 (de) 2008-10-21 2010-02-25 Continental Automotive Gmbh Massenstromsensorvorrichtung
JP2011077199A (ja) * 2009-09-29 2011-04-14 Sumitomo Bakelite Co Ltd 半導体パッケージおよび半導体装置
JP2012238725A (ja) 2011-05-12 2012-12-06 Toshiba Corp 半導体装置とその製造方法、およびそれを用いた半導体モジュール
JP5419230B2 (ja) * 2011-08-01 2014-02-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN102931105A (zh) 2011-08-10 2013-02-13 飞思卡尔半导体公司 半导体器件管芯键合
JP5994613B2 (ja) * 2012-12-05 2016-09-21 株式会社デンソー 電子装置の取付構造体
CN106158778B (zh) * 2015-03-12 2020-07-17 恩智浦美国有限公司 具有侧面接触垫和底部接触垫的集成电路封装
US9443830B1 (en) * 2015-06-09 2016-09-13 Apple Inc. Printed circuits with embedded semiconductor dies

Also Published As

Publication number Publication date
US9941182B2 (en) 2018-04-10
JP2015026811A (ja) 2015-02-05
US20160104653A1 (en) 2016-04-14
WO2014203477A1 (ja) 2014-12-24

Similar Documents

Publication Publication Date Title
US10083900B2 (en) Semiconductor device
JP4600576B2 (ja) 半導体装置およびその製造方法
JP5076549B2 (ja) 半導体装置
JP6138500B2 (ja) パワー半導体装置
JP6226068B2 (ja) 半導体装置
CN111341731A (zh) 半导体装置
JP6115505B2 (ja) 電子装置
EP2571047A2 (en) Insulating ring for packaging, insulating ring assembly and package
JP2014157925A (ja) 半導体装置
US9905490B2 (en) Semiconductor device
JP6165025B2 (ja) 半導体モジュール
JP2021072329A (ja) パワー半導体装置
US10985030B2 (en) Method for manufacturing semiconductor device
JP5124329B2 (ja) 半導体装置
JP5037398B2 (ja) 半導体装置
JP5408039B2 (ja) 電子装置
JP4728032B2 (ja) 半導体装置および半導体装置の製造方法
JP5109740B2 (ja) 電子装置およびその製造方法
JP6171841B2 (ja) 半導体装置
JP2023006103A (ja) 半導体装置および樹脂製構造体
US20180166620A1 (en) Electronic device
JP2020202292A (ja) 半導体装置、および半導体装置の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160404

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160830

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160915

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170221

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170306

R151 Written notification of patent or utility model registration

Ref document number: 6115505

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250