JP6114149B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6114149B2 JP6114149B2 JP2013184472A JP2013184472A JP6114149B2 JP 6114149 B2 JP6114149 B2 JP 6114149B2 JP 2013184472 A JP2013184472 A JP 2013184472A JP 2013184472 A JP2013184472 A JP 2013184472A JP 6114149 B2 JP6114149 B2 JP 6114149B2
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- Prior art keywords
- solder
- metal plate
- metal
- semiconductor
- power unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 397
- 229910052751 metal Inorganic materials 0.000 claims description 553
- 239000002184 metal Substances 0.000 claims description 553
- 229910000679 solder Inorganic materials 0.000 claims description 291
- 229920005989 resin Polymers 0.000 claims description 33
- 239000011347 resin Substances 0.000 claims description 33
- 238000007789 sealing Methods 0.000 claims description 7
- 239000011888 foil Substances 0.000 description 46
- 238000010586 diagram Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Description
それぞれ前記第1の金属板と前記第2の金属板との間に介在する複数の半導体素子と、
前記第1の金属板と前記半導体素子との間に介在する金属ブロック体と、
前記第1の金属板と前記金属ブロック体との間に介在し、該第1の金属板と該金属ブロック体とを接続する半田と、
前記半導体素子及び前記金属ブロック体を前記第1の金属板と前記第2の金属板との間に封止するモールド樹脂と、を備え、
前記第1の金属板の、前記金属ブロック体が前記半田を介して接続される面とは反対側の面が前記モールド樹脂から露出する半導体装置において、
前記第1の金属板は、前記半田が設置される領域の外周に沿うように形成され、かつ、前記半田を一つに纏めて囲うように形成された溝を有し、
前記溝は、前記複数の半導体素子が並ぶ方向で、前記複数の半導体素子の間には延在しないことを特徴とする半導体装置により達成される。
22,202,302 上アームパワーユニット
24,204,304 下アームパワーユニット
26,30,206,210,306,310 半導体スイッチング素子(半導体素子)
28,32,208,212,308,312 ダイオード(半導体素子)
34,36,54,56 金属板
38,40,42,46,48,52 半田
44,50 金属ブロック体
70,72 溝
74 モールド樹脂
80,82,84,86 領域
Claims (9)
- 対向して配置される第1及び第2の金属板と、
それぞれ前記第1の金属板と前記第2の金属板との間に介在する複数の半導体素子と、
前記第1の金属板と前記半導体素子との間に介在する金属ブロック体と、
前記第1の金属板と前記金属ブロック体との間に介在し、該第1の金属板と該金属ブロック体とを接続する半田と、
前記半導体素子及び前記金属ブロック体を前記第1の金属板と前記第2の金属板との間に封止するモールド樹脂と、を備え、
前記第1の金属板の、前記金属ブロック体が前記半田を介して接続される面とは反対側の面が前記モールド樹脂から露出する半導体装置において、
前記第1の金属板は、前記半田が設置される領域の外周に沿うように形成され、かつ、前記半田を一つに纏めて囲うように形成された溝を有し、
前記溝は、前記複数の半導体素子が並ぶ方向で、前記複数の半導体素子の間には延在しないことを特徴とする半導体装置。 - 前記溝は、略矩形状に形成される環状溝を含むことを特徴とする請求項1記載の半導体装置。
- 前記複数の半導体素子は、前記第1の金属板と前記第2の金属板との間において所定方向に並んで配置される2種類の半導体素子であり、
前記第1の金属板における一方の前記半導体素子側の前記金属ブロック体に対応する前記半田が設置される第一領域の、前記所定方向に直交する直交方向の幅と、前記第1の金属板における他方の前記半導体素子側の前記金属ブロック体に対応する前記半田が設置される第二領域の、前記直交方向の幅と、が略同一であることを特徴とする請求項2記載の半導体装置。 - 一方の前記半導体素子の前記直交方向のサイズ幅と、他方の前記半導体素子の前記直交方向のサイズ幅と、が略同一であることを特徴とする請求項3記載の半導体装置。
- 一方の前記半導体素子側の前記金属ブロック体の、少なくとも前記半田が設置される部位の前記直交方向のサイズ幅と、他方の前記半導体素子側の前記金属ブロック体の、少なくとも前記半田が設置される部位の前記直交方向のサイズ幅と、が略同一であることを特徴とする請求項3記載の半導体装置。
- 一方の前記半導体素子の前記直交方向のサイズ幅と、他方の前記半導体素子の前記直交方向のサイズ幅と、が互いに異なり、
一方の前記半導体素子側の前記金属ブロック体の形状と、他方の前記半導体素子側の前記金属ブロック体の形状と、が互いに異なることを特徴とする請求項5記載の半導体装置。 - 一方の前記半導体素子側の前記金属ブロック体の形状が略直方体形状であり、
他方の前記半導体素子側の前記金属ブロック体の形状が断面テーパ形状であることを特徴とする請求項6記載の半導体装置。 - 前記第1の金属板と前記第2の金属板との間において一方の前記半導体素子と他方の前記半導体素子とが前記所定方向に互いに離間する距離は、少なくとも前記金属ブロック体の積層方向のサイズ幅よりも大きいことを特徴とする請求項5乃至7の何れか一項記載の半導体装置。
- 前記複数の半導体素子は、電力変換装置のアーム素子を構成する一つのパワートランジスタと該パワートランジスタに並列接続される一つの還流ダイオードとであることを特徴とする請求項1乃至8の何れか一項記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013184472A JP6114149B2 (ja) | 2013-09-05 | 2013-09-05 | 半導体装置 |
CN201480048461.4A CN105518841B (zh) | 2013-09-05 | 2014-08-29 | 具有共同围绕焊料黏结物以防止焊料散布的凹槽的半导体装置 |
US14/916,136 US20160225690A1 (en) | 2013-09-05 | 2014-08-29 | Semiconductor device |
PCT/IB2014/001646 WO2015033197A2 (en) | 2013-09-05 | 2014-08-29 | Semiconductor device |
TW103130400A TW201533857A (zh) | 2013-09-05 | 2014-09-03 | 半導體裝置 |
US15/398,178 US9831160B2 (en) | 2013-09-05 | 2017-01-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013184472A JP6114149B2 (ja) | 2013-09-05 | 2013-09-05 | 半導体装置 |
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US (2) | US20160225690A1 (ja) |
JP (1) | JP6114149B2 (ja) |
CN (1) | CN105518841B (ja) |
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WO (1) | WO2015033197A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6350364B2 (ja) * | 2015-04-01 | 2018-07-04 | 株式会社デンソー | 接続構造体 |
JP6586970B2 (ja) | 2017-03-09 | 2019-10-09 | トヨタ自動車株式会社 | 半導体装置 |
JP6610590B2 (ja) * | 2017-03-21 | 2019-11-27 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP6972928B2 (ja) * | 2017-10-31 | 2021-11-24 | 株式会社デンソー | 半導体装置 |
JP6958259B2 (ja) * | 2017-11-08 | 2021-11-02 | 株式会社デンソー | 半導体装置 |
SG11202004755QA (en) * | 2018-01-30 | 2020-06-29 | Hitachi Chemical Co Ltd | Semiconductor device production method and film-shaped adhesive |
JP7069787B2 (ja) | 2018-02-09 | 2022-05-18 | 株式会社デンソー | 半導体装置 |
DE112018007231T5 (de) | 2018-03-07 | 2020-11-19 | Mitsubishi Electric Corporation | Halbleiterbauelement und Leistungswandler |
JP7103437B2 (ja) * | 2018-12-27 | 2022-07-20 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7088094B2 (ja) * | 2019-03-19 | 2022-06-21 | 株式会社デンソー | 半導体装置 |
JP7452233B2 (ja) * | 2020-05-01 | 2024-03-19 | 株式会社デンソー | 半導体装置および電力変換装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3269745B2 (ja) | 1995-01-17 | 2002-04-02 | 株式会社日立製作所 | モジュール型半導体装置 |
US20030001286A1 (en) * | 2000-01-28 | 2003-01-02 | Ryoichi Kajiwara | Semiconductor package and flip chip bonding method therein |
JP3934079B2 (ja) | 2003-05-08 | 2007-06-20 | 株式会社ルネサステクノロジ | 半導体装置 |
US20040262781A1 (en) * | 2003-06-27 | 2004-12-30 | Semiconductor Components Industries, Llc | Method for forming an encapsulated device and structure |
JP3905078B2 (ja) * | 2003-12-08 | 2007-04-18 | 京セラ株式会社 | 発光装置 |
US7179683B2 (en) * | 2004-08-25 | 2007-02-20 | Intel Corporation | Substrate grooves to reduce underfill fillet bridging |
JP2006156606A (ja) * | 2004-11-29 | 2006-06-15 | Nippon Inter Electronics Corp | 半導体装置の製造方法 |
JP4702196B2 (ja) * | 2005-09-12 | 2011-06-15 | 株式会社デンソー | 半導体装置 |
JP5467799B2 (ja) * | 2009-05-14 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2011167049A (ja) * | 2010-02-15 | 2011-08-25 | Denso Corp | 電力変換装置 |
JP5947537B2 (ja) * | 2011-04-19 | 2016-07-06 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
US8466548B2 (en) * | 2011-05-31 | 2013-06-18 | Infineon Technologies Ag | Semiconductor device including excess solder |
KR20130012500A (ko) * | 2011-07-25 | 2013-02-04 | 삼성전자주식회사 | 칩 패키지 구조물 및 그 제조 방법 |
JP2014093356A (ja) | 2012-11-01 | 2014-05-19 | Toyota Motor Corp | 半導体装置 |
-
2013
- 2013-09-05 JP JP2013184472A patent/JP6114149B2/ja active Active
-
2014
- 2014-08-29 WO PCT/IB2014/001646 patent/WO2015033197A2/en active Application Filing
- 2014-08-29 CN CN201480048461.4A patent/CN105518841B/zh active Active
- 2014-08-29 US US14/916,136 patent/US20160225690A1/en not_active Abandoned
- 2014-09-03 TW TW103130400A patent/TW201533857A/zh unknown
-
2017
- 2017-01-04 US US15/398,178 patent/US9831160B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201533857A (zh) | 2015-09-01 |
US9831160B2 (en) | 2017-11-28 |
US20170117212A1 (en) | 2017-04-27 |
US20160225690A1 (en) | 2016-08-04 |
CN105518841B (zh) | 2018-09-25 |
WO2015033197A3 (en) | 2015-08-13 |
WO2015033197A2 (en) | 2015-03-12 |
CN105518841A (zh) | 2016-04-20 |
JP2015053343A (ja) | 2015-03-19 |
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