JP7452233B2 - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
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- JP7452233B2 JP7452233B2 JP2020081437A JP2020081437A JP7452233B2 JP 7452233 B2 JP7452233 B2 JP 7452233B2 JP 2020081437 A JP2020081437 A JP 2020081437A JP 2020081437 A JP2020081437 A JP 2020081437A JP 7452233 B2 JP7452233 B2 JP 7452233B2
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- 239000004065 semiconductor Substances 0.000 title claims description 306
- 238000006243 chemical reaction Methods 0.000 title claims description 36
- 229910000679 solder Inorganic materials 0.000 claims description 114
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 18
- 229920005989 resin Polymers 0.000 description 78
- 239000011347 resin Substances 0.000 description 78
- 238000007789 sealing Methods 0.000 description 62
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 34
- 239000003990 capacitor Substances 0.000 description 29
- 230000001681 protective effect Effects 0.000 description 23
- 238000009499 grossing Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 230000006378 damage Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 238000012937 correction Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 238000009736 wetting Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000007665 sagging Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- -1 nickel metal hydride Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
- H02M1/007—Plural converter units in cascade
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
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Description
第1主電極(31C)と、第1主電極とは板厚方向において反対の面に形成された第2主電極(31E)と、を有する半導体素子(30)と、
第1主電極に接続された第1配線部材(40)と、
第2主電極に接続された第1端面(60a)と、板厚方向において第1端面とは反対の第2端面(60b)と、を有し、第2端面が、板厚方向に直交する第1方向に平行な2つの辺と、板厚方向および第1方向に直交する第2方向に平行な2つの辺と、を有する矩形状をなしているターミナル(60)と、
はんだ(91)を介してターミナルの第2端面に接続され、ターミナルとの対向面(50a)に、ターミナルとの接続領域(51)と、接続領域を取り囲み、余剰のはんだを収容する溝(52)と、を有する第2配線部材(50)と、
を備え、
ひとつの溝は、ひとつの接続領域のみを取り囲んでおり、
溝は、板厚方向からの平面視において、ターミナルの第2端面の4辺のうちのひとつのみ、もしくは、2つのみと重なるように設けられている。
第1電力変換部(7)を構成する第1半導体装置(17A)と、
第2電力変換部(6)を構成する第2半導体装置(17C)と、
を備え、
各半導体装置は、
第1主電極(31C)と、第1主電極とは板厚方向において反対の面に形成された第2主電極(31E)と、を有する半導体素子(30)と、
第1主電極に接続された第1配線部材(40)と、
第2主電極に接続された第1端面(60a)と、板厚方向において第1端面とは反対の第2端面(60b)と、を有し、第2端面が、板厚方向に直交する第1方向に平行な2つの辺と、板厚方向および第1方向に直交する第2方向に平行な2つの辺と、を有する矩形状をなしているターミナル(60)と、
はんだ(91)を介してターミナルの第2端面に接続され、ターミナルとの対向面(50a)に、ターミナルとの接続領域(51)と、接続領域を取り囲み、余剰のはんだを収容する溝(52)と、を有する第2配線部材(50)と、
を備え、
第1半導体装置と第2半導体装置とにおいて、板厚方向から平面視したターミナルの大きさは互いに異なり、溝の大きさは互いに等しくされ、
各半導体装置の溝は、平面視において、ターミナルの第2端面の4辺のうちのひとつのみ、もしくは、2つのみと重なるように設けられている。
本実施形態に係る電力変換装置は、回転電機を駆動源とする移動体に適用可能である。移動体は、たとえば電気自動車(EV)、ハイブリッド自動車(HV)、燃料電池車(FCV)などの電動車両、ドローンなどの飛行体、船舶、建設機械、農業機械である。以下では、移動体として車両(ハイブリッド自動車)の例を示す。
先ず、図1に基づき、電力変換装置5が適用される車両の駆動システム1の概略構成について説明する。図1に示すように、車両の駆動システム1は、直流電源2と、モータジェネレータ3、4と、直流電源2とモータジェネレータ3、4との間で電力変換を行う電力変換装置5を備えている。
次に、図1に基づき、電力変換装置5の回路構成について説明する。図1に示すように、電力変換装置5は、フィルタコンデンサC1と、平滑コンデンサC2と、コンバータ6と、インバータ7、8と、制御回路部9と、駆動回路部10などを備えている。
次に、図2および図3に基づき、半導体モジュール16の構造について説明する。図3は、図2をX1方向から見た側面図である。図3では、半導体モジュール16とともに、回路基板19を図示している。以下では、半導体装置17と熱交換部180との積層方向をZ方向と示す。Z方向に直交する一方向をX方向と示し、Z方向およびX方向の両方向に直交する方向をY方向と示す。
次に、図4~図11に基づき、半導体装置17の一例について説明する。図4は半導体装置17をエミッタ側から見た平面図であり、図5はコレクタ側から見た平面図である。図6、図7、図8は、図4のVI-VI線、VII-VII線、VIII-VIII線に沿う断面図である。図9は、リードフレーム95を示す平面図である。図10は、リードフレーム95上に、半導体素子30およびターミナル60を配置した状態を示す平面図である。図11は、ターミナル60上にエミッタ側のヒートシンク50を配置した状態を示す平面図である。図9~図11では、便宜上、カット前のリードフレーム95を示している。
次に、図9~図14に基づき、上記した半導体装置17の製造方法の一例について説明する。図12は、封止樹脂体20の成形工程を示す部分断面図である。図12は、樹脂注入の途中段階を示している。図12においては、ターミナル周辺の樹脂の流れを示している。図13は、封止樹脂体20の成形後を示す平面図である。図14は、切削加工後を示す平面図である。以下では、溶融状態のはんだについては、溶融はんだと示す。
次に、図6~図8、図10、および図15に基づき、ターミナル60と、ヒートシンク50の溝52との位置関係について説明する。各図に示す一点鎖線は、半導体装置17A、17B、17C相互の位置の基準を示している。図15は、各半導体装置17A、17B、17Cにおいて、ターミナル60と溝52との位置関係を示している。図15では、位置関係を示すために、ヒートシンク50に対向する側の面である端面60bを示している。図15において上アーム側のヒートシンク50Hおよびターミナル60Hを例示しているが、下アーム側のヒートシンク50Lおよびターミナル60Lについても同様の構成である。
上記したように、本実施形態の半導体装置17では、ヒートシンク50の溝52を、平面視において、ターミナル60の端面60bの外周端部と重なるように設けている。これにより、はんだ91の余剰分が溝52に流れ込みやすい。よって、余剰のはんだ91を、溝52に収容することができる。たとえば、はんだ91が、ターミナル60の側面側に濡れ拡がるのを抑制することができる。
この実施形態は、先行する実施形態を基礎的形態とする変形例であり、先行実施形態の記載を援用できる。先行実施形態では、ヒートシンク50の対向面50aに、余剰のはんだ91を収容する溝52を設けた。さらに、溝52の外へのはんだ溢れを抑制する構成としてもよい。
次に、粗化領域53の形成方法について説明する。まず、溝52を備えたヒートシンク50を準備する。本実施形態では、溝72を備えた継手部71が一体的に連なるヒートシンク50を準備する。継手部71が連なるヒートシンク50は、金属板をプレス加工することで形成される。この時点で、ヒートシンク50は、上記した母材54と金属膜55を有している。
本実施形態によれば、溝52を取り囲むように、粗化領域53を設けている。また、はんだ91に対する濡れ性の高い金属膜55に対し、レーザ光を局所的に照射して凹凸酸化膜56を形成することで、粗化領域53としている。酸化膜(凹凸酸化膜56)は、金属膜55に較べて、はんだ91に対する濡れ性が低い。凹凸酸化膜56は、表面に微細な凹凸を有しているため、はんだ91との接触面積が小さくなり、はんだ91の一部は表面張力によって球状になる。すなわち、接触角が大きくなる。これにより、はんだ91に対する濡れ性が低い。したがって、凹凸酸化膜56により、溝52の外へはんだ91が濡れ拡がるのを抑制することができる。
本実施形態では、ヒートシンク50の対向面50aにおいて、溝52の外側の領域の全域を粗化領域53とする例を示したが、これに限定されない。溝52を取り囲むように、溝52よりも外側領域の一部のみに、粗化領域53を設けてもよい。
この実施形態は、先行する実施形態を基礎的形態とする変形例であり、先行実施形態の記載を援用できる。先行実施形態では、半導体素子の保護膜について、特に言及しなかった。これに対し、保護膜からの封止樹脂体の剥離を抑制する構成としてもよい。
本実施形態の半導体素子30は、表面の算術平均粗さRaが8nm以上の保護膜32を有している。これにより、半導体装置17において、保護膜32と封止樹脂体20との密着性が向上している。よって、封止樹脂体20が、保護膜32から剥離し難い。たとえば、パッド31Pの周辺において封止樹脂体20の剥離を抑制し、ひいてはボンディングワイヤ96の破断を抑制することができる。
この明細書および図面等における開示は、例示された実施形態に制限されない。開示は、例示された実施形態と、それらに基づく当業者による変形態様を包含する。たとえば、開示は、実施形態において示された部品および/または要素の組み合わせに限定されない。開示は、多様な組み合わせによって実施可能である。開示は、実施形態に追加可能な追加的な部分をもつことができる。開示は、実施形態の部品および/または要素が省略されたものを包含する。開示は、ひとつの実施形態と他の実施形態との間における部品および/または要素の置き換え、または組み合わせを包含する。開示される技術的範囲は、実施形態の記載に限定されない。開示されるいくつかの技術的範囲は、請求の範囲の記載によって示され、さらに請求の範囲の記載と均等の意味および範囲内でのすべての変更を含むものと解されるべきである。
Claims (7)
- 第1主電極(31C)と、前記第1主電極とは板厚方向において反対の面に形成された第2主電極(31E)と、を有する半導体素子(30)と、
前記第1主電極に接続された第1配線部材(40)と、
前記第2主電極に接続された第1端面(60a)と、前記板厚方向において前記第1端面とは反対の第2端面(60b)と、を有し、前記第2端面が、前記板厚方向に直交する第1方向に平行な2つの辺と、前記板厚方向および前記第1方向に直交する第2方向に平行な2つの辺と、を有する矩形状をなしているターミナル(60)と、
はんだ(91)を介して前記ターミナルの前記第2端面に接続され、前記ターミナルとの対向面(50a)に、前記ターミナルとの接続領域(51)と、前記接続領域を取り囲み、余剰の前記はんだを収容する溝(52)と、を有する第2配線部材(50)と、
を備え、
ひとつの前記溝は、ひとつの前記接続領域のみを取り囲んでおり、
前記溝は、前記板厚方向からの平面視において、前記ターミナルの前記第2端面の4辺のうちのひとつのみ、もしくは、2つのみと重なるように設けられている半導体装置。 - 前記半導体素子は、前記第2主電極側の面に形成され、前記第2方向において前記第2主電極と並んで配置されたパッド(31P)を有し、
前記溝は、前記第2方向において前記ターミナルに対して偏っており、前記辺のうち、前記第2端面における前記パッド側の第1辺(61a)と重なり、前記第1辺とは反対側の第2辺(61b)とは重ならないように設けられている請求項1に記載の半導体装置。 - 前記接続領域は、前記ターミナルの前記第2辺と前記溝との間の部分であって、前記平面視において前記ターミナルと重なっていない非重なり領域(51a)を含み、
前記はんだは、前記非重なり領域にも配置されている請求項2に記載の半導体装置。 - 前記半導体素子は、前記第2主電極側の面に形成され、前記第2方向において前記第2主電極と並んで配置されたパッド(31P)を有し、
前記溝は、前記辺のうち、前記第2端面において前記第1方向の両側の第3辺(61c)および第4辺(61d)と重なっている請求項1に記載の半導体装置。 - 前記溝は、前記第2方向において、前記ターミナルに対して偏っており、
前記第2方向において、前記第2端面における前記パッド側の前記辺である第1辺(61a)のほうが、前記第1辺とは反対側の前記辺である第2辺(61b)よりも、前記溝に対して近い請求項4に記載の半導体装置。 - 前記第2配線部材は、母材(54)と、前記母材の表面に形成された金属膜(55)と、前記金属膜の主成分の金属と同じ金属の酸化物であり、表面が連続して凹凸をなす凹凸酸化膜(56)と、を有し、
前記凹凸酸化膜は、前記対向面において、前記溝を取り囲むように設けられている請求項1~5いずれか1項に記載の半導体装置。 - 第1電力変換部(7)を構成する第1半導体装置(17A)と、
第2電力変換部(6)を構成する第2半導体装置(17C)と、
を備え、
各半導体装置は、
第1主電極(31C)と、前記第1主電極とは板厚方向において反対の面に形成された第2主電極(31E)と、を有する半導体素子(30)と、
前記第1主電極に接続された第1配線部材(40)と、
前記第2主電極に接続された第1端面(60a)と、前記板厚方向において前記第1端面とは反対の第2端面(60b)と、を有し、前記第2端面が、前記板厚方向に直交する第1方向に平行な2つの辺と、前記板厚方向および前記第1方向に直交する第2方向に平行な2つの辺と、を有する矩形状をなしているターミナル(60)と、
はんだ(91)を介して前記ターミナルの前記第2端面に接続され、前記ターミナルとの対向面(50a)に、前記ターミナルとの接続領域(51)と、前記接続領域を取り囲み、余剰の前記はんだを収容する溝(52)と、を有する第2配線部材(50)と、
を備え、
前記第1半導体装置と前記第2半導体装置とにおいて、前記板厚方向から平面視した前記ターミナルの大きさは互いに異なり、前記溝の大きさは互いに等しくされ、
各半導体装置の前記溝は、前記平面視において、前記ターミナルの前記第2端面の4辺のうちのひとつのみ、もしくは、2つのみと重なっている電力変換装置。
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