JP6069429B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP6069429B2 JP6069429B2 JP2015154967A JP2015154967A JP6069429B2 JP 6069429 B2 JP6069429 B2 JP 6069429B2 JP 2015154967 A JP2015154967 A JP 2015154967A JP 2015154967 A JP2015154967 A JP 2015154967A JP 6069429 B2 JP6069429 B2 JP 6069429B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/463—Microwave discharges using antennas or applicators
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
[誘電体窓ガス通路回りの構成に関する実施例1]
[放電防止部材の作成及び取付方法]
[実施例1の変形例]
[包囲導体の距離範囲に関する条件]
[実施例1の応用例]
[誘電体窓ガス流路回りの構成に関する実施例2]
[実施例2の変形例]
[誘電体窓ガス流路回りの構成に関する実施例3]
λg/4<RC<5λg/8 ・・・・・(1)
[実施例3の変形例]
λg/4<RA<5λg/8 ・・・・・(2)
λg/4<RB<5λg/8 ・・・・・(3)
[誘電体窓ガス流路回りの構成に関する実施例4]
λg/4<RD1<5λg/8 ・・・・・(4)
λg/4<RD2<5λg/8 ・・・・・(5)
[誘電体窓ガス流路回りの構成に関する実施例5]
[実施例5の変形例]
[誘電体窓ガス流路回りの構成に関する実施例6]
[誘電体窓ガス流路回りの構成に関する実施例7]
[誘電体窓ガス流路回りの構成に関する実施例8]
[誘電体窓ガス流路回りの構成に関する実施例9]
[実施例9の変形例]
[ガスノズルの作成方法]
[実施例9の他の変形例または応用例]
[その他の実施例または変形例]
12 サセプタ(下部電極)
26 排気装置
52 誘電体窓(天板)
54 スロット板
55 ラジアルラインスロットアンテナ
56 誘電体板
58 マイクロ波伝送線路
60 マイクロ波発生器
66 同軸管
80 上部ガス導入部
86 処理ガス供給源
90 コネクタ部(外部ガス管)
92(1)〜92(8),92(n) 分岐ガス流路
94(1)〜94(8) ,94(n) 誘電体窓ガス流路
96(1)〜96(8) ,96(n) 放電防止部材
114 (放電防止部材の)突出部
116,134 スプリングコイル
118 包囲導体
120 Oリング
126 筒部
128 放電防止部材(多孔質誘電体)
142 Oリング
144 Oリング内側の隙間(ガス溝)
146 Oリング外側の隙間
142 コネクタ部
162,162' ノズル部
160 誘電体窓開口
166,166' コネクタ部内のガス流路
170 Oリング
206 張出導体
210 包囲導体
212 ガスノズル
214 貫通孔
216 ノズルピース
216A 外側ノズルピース
216B 内側ノズルピース
218 縦溝
224 接着剤(層)
234,236 縦溝
Claims (7)
- 誘電体窓を有する真空排気可能な処理容器と、
前記処理容器内で被処理基板を保持する基板保持部と、
前記誘電体窓に設けられるガスノズルと、前記処理容器内のプラズマ生成空間から見て前記誘電体窓の裏側または外側で前記ガスノズルと接続する外部ガス供給路とを有し、所要の処理ガスの少なくとも一部を前記外部ガス供給路および前記ガスノズルを介して前記処理容器内に供給する処理ガス供給装置と、
前記誘電体窓を介して前記処理容器内に電磁波を供給する電磁波供給部と
を具備し、
前記ガスノズルが、前記誘電体窓に形成される貫通孔と、前記貫通孔に嵌め込まれる誘電体のノズルピースとを有し、
前記ノズルピースの外周面に、その一端から他端まで軸方向に最短距離で延びる縦溝が並列に複数本形成されている、
プラズマ処理装置。 - 前記縦溝の溝の幅は、0.05〜0.2mmの範囲にある、請求項1に記載のプラズマ処理装置。
- 前記貫通孔および前記ノズルピースが、前記誘電体窓の厚さ方向において同一のテーパ角θで変化する口径をそれぞれ有し、
前記テーパ角θは、0.001≦tanθ≦0.2の範囲にある、
請求項1または請求項2に記載のプラズマ処理装置。 - 前記貫通孔または前記ノズルピースのいずれか一方の口径が、前記誘電体窓の厚さ方向の途中でステップ的に変わる、請求項1〜3のいずれか一項に記載のプラズマ処理装置。
- 前記ノズルピースの外周面と前記貫通孔の内壁との間に接着層を有する、請求項1〜4のいずれか一項に記載のプラズマ処理装置。
- 前記接着層は、無機ポリマーの焼結体からなるか、もしくはそれを含む、請求項5に記載のプラズマ処理装置。
- 前記接着層は、前記誘電体窓または前記ノズルピースと同じ材質の誘電体を含む、請求項5に記載のプラズマ処理装置。
Priority Applications (1)
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JP2015154967A JP6069429B2 (ja) | 2011-10-07 | 2015-08-05 | プラズマ処理装置 |
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JP2011223334 | 2011-10-07 | ||
JP2011223331 | 2011-10-07 | ||
JP2011223335 | 2011-10-07 | ||
JP2011223331 | 2011-10-07 | ||
JP2011223335 | 2011-10-07 | ||
JP2011223334 | 2011-10-07 | ||
JP2015154967A JP6069429B2 (ja) | 2011-10-07 | 2015-08-05 | プラズマ処理装置 |
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JP2013537413A Division JP5792315B2 (ja) | 2011-10-07 | 2012-10-03 | プラズマ処理装置 |
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JP2016015496A JP2016015496A (ja) | 2016-01-28 |
JP6069429B2 true JP6069429B2 (ja) | 2017-02-01 |
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JP2013537413A Expired - Fee Related JP5792315B2 (ja) | 2011-10-07 | 2012-10-03 | プラズマ処理装置 |
JP2015154967A Expired - Fee Related JP6069429B2 (ja) | 2011-10-07 | 2015-08-05 | プラズマ処理装置 |
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JP2013537413A Expired - Fee Related JP5792315B2 (ja) | 2011-10-07 | 2012-10-03 | プラズマ処理装置 |
Country Status (5)
Country | Link |
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US (1) | US9767993B2 (ja) |
JP (2) | JP5792315B2 (ja) |
KR (1) | KR101969611B1 (ja) |
TW (1) | TW201331408A (ja) |
WO (1) | WO2013051248A1 (ja) |
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USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
WO2023027199A1 (ko) * | 2021-08-23 | 2023-03-02 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
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JP2001237227A (ja) * | 2000-02-23 | 2001-08-31 | Kobe Steel Ltd | プラズマ処理装置 |
JP2003007497A (ja) | 2001-06-19 | 2003-01-10 | Pearl Kogyo Kk | 大気圧プラズマ処理装置 |
JP2003338492A (ja) * | 2002-05-21 | 2003-11-28 | Tokyo Electron Ltd | プラズマ処理装置 |
US20040261712A1 (en) * | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
JP4280555B2 (ja) * | 2003-05-30 | 2009-06-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2006004686A (ja) * | 2004-06-16 | 2006-01-05 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
JP4572100B2 (ja) * | 2004-09-28 | 2010-10-27 | 日本エー・エス・エム株式会社 | プラズマ処理装置 |
JP5213150B2 (ja) * | 2005-08-12 | 2013-06-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法 |
JP5082229B2 (ja) * | 2005-11-29 | 2012-11-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5068458B2 (ja) * | 2006-01-18 | 2012-11-07 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
KR100954128B1 (ko) | 2006-01-20 | 2010-04-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치, 플라즈마 처리 장치에 이용되는 천판 및, 천판의 제조 방법 |
US20080254220A1 (en) * | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
JP5082459B2 (ja) | 2006-01-20 | 2012-11-28 | 東京エレクトロン株式会社 | プラズマ処理装置及び天板の製造方法 |
JP5463536B2 (ja) * | 2006-07-20 | 2014-04-09 | 北陸成型工業株式会社 | シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
JP2008124424A (ja) * | 2006-10-16 | 2008-05-29 | Tokyo Electron Ltd | プラズマ成膜装置及びプラズマ成膜方法 |
US20080303744A1 (en) * | 2007-06-11 | 2008-12-11 | Tokyo Electron Limited | Plasma processing system, antenna, and use of plasma processing system |
US8336891B2 (en) * | 2008-03-11 | 2012-12-25 | Ngk Insulators, Ltd. | Electrostatic chuck |
JP4590597B2 (ja) * | 2008-03-12 | 2010-12-01 | 国立大学法人東北大学 | シャワープレートの製造方法 |
JP5665265B2 (ja) | 2008-06-24 | 2015-02-04 | 東京エレクトロン株式会社 | チャンバー部品を介してプロセス流体を導入する方法及びシステム |
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US9767993B2 (en) | 2017-09-19 |
JP2016015496A (ja) | 2016-01-28 |
KR20140084018A (ko) | 2014-07-04 |
KR101969611B1 (ko) | 2019-04-16 |
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JP5792315B2 (ja) | 2015-10-07 |
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