JP6023165B2 - 無線周波数応用分野向けの半導体オンインシュレータタイプの基板のための製造方法 - Google Patents
無線周波数応用分野向けの半導体オンインシュレータタイプの基板のための製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 194
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000012212 insulator Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 25
- 239000003989 dielectric material Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000001953 recrystallisation Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004483 ATR-FTIR spectroscopy Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000005102 attenuated total reflection Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
(a)500Ω・cmより大きい電気抵抗率を有するシリコン基板を用意するステップと、
(b)前記基板上に多結晶シリコン層を形成するステップとを具えた方法において、
ステップa)とステップb)の間に、自然酸化物層とは異なる誘電材料層を、基板上に、厚さ0.5nmと10nmの間で形成するステップを含むことを特徴とする方法を開示する。
(c)前記多結晶シリコン層上、および/またはドナー基板の半導体材料層上に、誘電材料層を形成するステップと、
(d)ステップ(c)で得られた基板をドナー基板上に接合するステップであって、ステップ(c)で形成された誘電体層(1つまたは複数)が界面にある、ステップと、
(e)ドナー基板から前記薄い層を分離するステップとを順次具えた。
第1のステップは、高抵抗率シリコン基板の特別な洗浄を適用することからなる。
Claims (10)
- 無線周波数応用分野向けの半導体オンインシュレータタイプの基板を製造するための方法であって、
(a)500Ω・cmより大きい電気抵抗率を有するシリコン基板を用意するステップと、
(b)前記シリコン基板上に多結晶シリコン層を形成するステップと、
ステップa)とステップb)の間に、自然酸化物層とは異なる誘電材料層を、前記基板(1)上に形成するステップを含み、
(c)前記シリコン基板と、前記誘電材料層と、および前記多結晶シリコン層とを熱処理にかけるステップであって、前記誘電材料層は、熱処理中に該誘電材料層の少なくとも一部が溶解するように、熱処理前に0.5nmと10nmとの間からなる所定のおよび十分な厚さを有し、および前記多結晶シリコン層の電気抵抗率が少なくとも前記シリコン基板の電気抵抗率に等しい、該ステップと
を具えたことを特徴とする方法。 - ステップ(b)の後に、
(b1)前記多結晶シリコン層上、および/またはドナー基板の半導体材料層上に、誘電材料層を形成するステップと、
(b2)ステップ(b1)で得られた前記基板を前記ドナー基板上に接合するステップであって、ステップ(b1)で形成された前記誘電体層が界面にある、ステップと、
(b3)前記ドナー基板から前記半導体材料層を分離するステップと
を順次具えたことを特徴とする請求項1記載の方法。 - 前記多結晶シリコン層内のドーピングエージェントの濃度は、1016cm−3 以下、好ましくは1014cm−3以下であることを特徴とする請求項1または2記載の方法。
- 前記多結晶シリコン層は、厚さ100nmと10000nmとの間、好ましくは300nmと3000nmの間であることを特徴とする請求項1ないし3のうちの1つに記載の方法。
- 前記基板と前記多結晶シリコン層との間に形成される層の誘電材料は、シリコン酸化物であることを特徴とする請求項1ないし4のうちの1つに記載の方法。
- 半導体オンインシュレータタイプの基板を形成するためのベース基板であって、500Ω・cmより大きい電気抵抗率を有するシリコン基板と、多結晶シリコン層とを具えたベース基板において、
前記シリコン基板と前記多結晶シリコン層との間に、厚さ0.5nmと10nmの間の、自然酸化物層とは異なる誘電材料層を具え、
および前記多結晶シリコン層の電気抵抗率が少なくとも前記シリコン基板の電気抵抗率に等しいことを特徴とするベース基板。 - 無線周波数応用分野向けの半導体オンインシュレータタイプの基板であって、500Ω・cmより大きい電気抵抗率を有するシリコン基板と、それに連続的に続く多結晶シリコン層と、誘電材料層と、単結晶半導体材料層とを具えた基板において、
前記シリコン基板と前記多結晶シリコン層との間に、2nm以下の厚さを有する、自然酸化物層とは異なる誘電材料層を具え、および前記多結晶シリコン層の電気抵抗率が少なくとも前記シリコン基板の電気抵抗率に等しいことを特徴とする基板。 - 前記多結晶シリコン層内のドーピングエージェントの濃度は、1016cm−3 以下、好ましくは1014cm−3以下であることを特徴とする請求項7記載の基板。
- 前記多結晶シリコン層の厚さは、100nmと10000nmの間、好ましくは300nmと3000nmの間であることを特徴とする請求項7または8記載の基板。
- 請求項7ないし9のうちの1つに記載の半導体オンインシュレータタイプの基板内の半導体材料の層内またはその上に形成された構成部品を具えたことを特徴とする無線周波数デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1152355 | 2011-03-22 | ||
FR1152355A FR2973158B1 (fr) | 2011-03-22 | 2011-03-22 | Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences |
PCT/EP2012/055133 WO2012127006A1 (en) | 2011-03-22 | 2012-03-22 | Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications |
Publications (2)
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JP2014509087A JP2014509087A (ja) | 2014-04-10 |
JP6023165B2 true JP6023165B2 (ja) | 2016-11-09 |
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US (1) | US9129800B2 (ja) |
EP (1) | EP2689453B1 (ja) |
JP (1) | JP6023165B2 (ja) |
KR (2) | KR20140027153A (ja) |
CN (1) | CN103460371B (ja) |
FR (1) | FR2973158B1 (ja) |
SG (1) | SG193529A1 (ja) |
TW (1) | TWI560752B (ja) |
WO (1) | WO2012127006A1 (ja) |
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FR2999801B1 (fr) * | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
US8951896B2 (en) | 2013-06-28 | 2015-02-10 | International Business Machines Corporation | High linearity SOI wafer for low-distortion circuit applications |
CN103390593B (zh) * | 2013-08-05 | 2015-09-23 | 苏州远创达科技有限公司 | 一种半导体衬底及其制造方法 |
JP6232993B2 (ja) * | 2013-12-12 | 2017-11-22 | 日立化成株式会社 | 半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子 |
KR102212296B1 (ko) * | 2014-01-23 | 2021-02-04 | 글로벌웨이퍼스 씨오., 엘티디. | 고 비저항 soi 웨이퍼 및 그 제조 방법 |
FR3019373A1 (fr) | 2014-03-31 | 2015-10-02 | St Microelectronics Sa | Procede de fabrication d'une plaque de semi-conducteur adaptee pour la fabrication d'un substrat soi et plaque de substrat ainsi obtenue |
JP6118757B2 (ja) * | 2014-04-24 | 2017-04-19 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
JP6100200B2 (ja) | 2014-04-24 | 2017-03-22 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
US9899499B2 (en) | 2014-09-04 | 2018-02-20 | Sunedison Semiconductor Limited (Uen201334164H) | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
US9853133B2 (en) | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
US10312134B2 (en) | 2014-09-04 | 2019-06-04 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
WO2016081367A1 (en) * | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION |
EP4170705A3 (en) | 2014-11-18 | 2023-10-18 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
EP3221884B1 (en) * | 2014-11-18 | 2022-06-01 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafers with charge trapping layers and method of manufacturing thereof |
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Publication number | Publication date |
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EP2689453B1 (en) | 2020-11-04 |
WO2012127006A1 (en) | 2012-09-27 |
CN103460371B (zh) | 2016-04-06 |
KR20140027153A (ko) | 2014-03-06 |
FR2973158B1 (fr) | 2014-02-28 |
KR101959900B1 (ko) | 2019-03-19 |
SG193529A1 (en) | 2013-10-30 |
TWI560752B (en) | 2016-12-01 |
US20140084290A1 (en) | 2014-03-27 |
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