TWI560752B - Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications - Google Patents

Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications

Info

Publication number
TWI560752B
TWI560752B TW101109689A TW101109689A TWI560752B TW I560752 B TWI560752 B TW I560752B TW 101109689 A TW101109689 A TW 101109689A TW 101109689 A TW101109689 A TW 101109689A TW I560752 B TWI560752 B TW I560752B
Authority
TW
Taiwan
Prior art keywords
semiconductor
manufacturing
type substrate
insulator type
radiofrequency applications
Prior art date
Application number
TW101109689A
Other languages
English (en)
Other versions
TW201308396A (zh
Inventor
Frederic Allibert
Julie Widiez
Original Assignee
Soitec Silicon On Insulator
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Commissariat Energie Atomique filed Critical Soitec Silicon On Insulator
Publication of TW201308396A publication Critical patent/TW201308396A/zh
Application granted granted Critical
Publication of TWI560752B publication Critical patent/TWI560752B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW101109689A 2011-03-22 2012-03-21 Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications TWI560752B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1152355A FR2973158B1 (fr) 2011-03-22 2011-03-22 Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences

Publications (2)

Publication Number Publication Date
TW201308396A TW201308396A (zh) 2013-02-16
TWI560752B true TWI560752B (en) 2016-12-01

Family

ID=44020374

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101109689A TWI560752B (en) 2011-03-22 2012-03-21 Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications

Country Status (9)

Country Link
US (1) US9129800B2 (zh)
EP (1) EP2689453B1 (zh)
JP (1) JP6023165B2 (zh)
KR (2) KR101959900B1 (zh)
CN (1) CN103460371B (zh)
FR (1) FR2973158B1 (zh)
SG (1) SG193529A1 (zh)
TW (1) TWI560752B (zh)
WO (1) WO2012127006A1 (zh)

Families Citing this family (72)

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JP6118757B2 (ja) 2014-04-24 2017-04-19 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
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US10312134B2 (en) * 2014-09-04 2019-06-04 Globalwafers Co., Ltd. High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
US9853133B2 (en) * 2014-09-04 2017-12-26 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity silicon-on-insulator substrate
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JP6637515B2 (ja) 2015-03-17 2020-01-29 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 半導体オン・インシュレータ構造の製造において使用するための熱的に安定した電荷トラップ層
JP6533309B2 (ja) 2015-06-01 2019-06-19 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 多層構造体の製造方法
WO2016196060A1 (en) 2015-06-01 2016-12-08 Sunedison Semiconductor Limited A method of manufacturing semiconductor-on-insulator
JP6353814B2 (ja) 2015-06-09 2018-07-04 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
DE102015211087B4 (de) 2015-06-17 2019-12-05 Soitec Verfahren zur Herstellung eines Hochwiderstands-Halbleiter-auf-Isolator-Substrates
EP3144958B1 (en) 2015-09-17 2021-03-17 Soitec Structure for radiofrequency applications and process for manufacturing such a structure
CN108780776B (zh) 2015-11-20 2023-09-29 环球晶圆股份有限公司 使半导体表面平整的制造方法
US9831115B2 (en) 2016-02-19 2017-11-28 Sunedison Semiconductor Limited (Uen201334164H) Process flow for manufacturing semiconductor on insulator structures in parallel
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FR3116151A1 (fr) 2020-11-10 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d’une structure de piegeage d’un substrat utile
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TW201041039A (en) * 2009-01-12 2010-11-16 Ibm Low cost fabrication of double box back gate silicon-on-insulator wafers

Also Published As

Publication number Publication date
JP2014509087A (ja) 2014-04-10
US9129800B2 (en) 2015-09-08
TW201308396A (zh) 2013-02-16
KR20180084147A (ko) 2018-07-24
CN103460371B (zh) 2016-04-06
FR2973158A1 (fr) 2012-09-28
CN103460371A (zh) 2013-12-18
WO2012127006A1 (en) 2012-09-27
FR2973158B1 (fr) 2014-02-28
EP2689453B1 (en) 2020-11-04
SG193529A1 (en) 2013-10-30
KR20140027153A (ko) 2014-03-06
US20140084290A1 (en) 2014-03-27
JP6023165B2 (ja) 2016-11-09
KR101959900B1 (ko) 2019-03-19
EP2689453A1 (en) 2014-01-29

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