JP5996381B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
JP5996381B2
JP5996381B2 JP2012243723A JP2012243723A JP5996381B2 JP 5996381 B2 JP5996381 B2 JP 5996381B2 JP 2012243723 A JP2012243723 A JP 2012243723A JP 2012243723 A JP2012243723 A JP 2012243723A JP 5996381 B2 JP5996381 B2 JP 5996381B2
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gas
wafer
substrate
supply
supplying
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Japanese (ja)
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JP2013153135A (ja
JP2013153135A5 (https=
Inventor
波 宏 光 難
波 宏 光 難
フィトリアント
永 容 一 徳
永 容 一 徳
野 嘉 文 天
野 嘉 文 天
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012243723A priority Critical patent/JP5996381B2/ja
Priority to TW106105399A priority patent/TWI643284B/zh
Priority to TW108116486A priority patent/TWI706495B/zh
Priority to TW101143316A priority patent/TWI578424B/zh
Priority to TW106105398A priority patent/TWI689026B/zh
Priority to KR1020120152923A priority patent/KR101789111B1/ko
Priority to US13/727,671 priority patent/US8828183B2/en
Publication of JP2013153135A publication Critical patent/JP2013153135A/ja
Priority to US14/447,029 priority patent/US9859136B2/en
Publication of JP2013153135A5 publication Critical patent/JP2013153135A5/ja
Application granted granted Critical
Publication of JP5996381B2 publication Critical patent/JP5996381B2/ja
Priority to KR1020170134117A priority patent/KR102009083B1/ko
Priority to US15/823,691 priority patent/US10707102B2/en
Priority to KR1020190093925A priority patent/KR102142220B1/ko
Priority to US16/890,332 priority patent/US11437252B2/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0422Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/66Wet etching of conductive or resistive materials
    • H10P50/663Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/50Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54Cleaning of wafer edges
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0448Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

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  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
JP2012243723A 2011-12-28 2012-11-05 基板処理装置および基板処理方法 Active JP5996381B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2012243723A JP5996381B2 (ja) 2011-12-28 2012-11-05 基板処理装置および基板処理方法
TW106105399A TWI643284B (zh) 2011-12-28 2012-11-20 基板處理裝置
TW108116486A TWI706495B (zh) 2011-12-28 2012-11-20 基板處理裝置
TW101143316A TWI578424B (zh) 2011-12-28 2012-11-20 基板處理裝置與基板處理方法
TW106105398A TWI689026B (zh) 2011-12-28 2012-11-20 基板處理裝置
KR1020120152923A KR101789111B1 (ko) 2011-12-28 2012-12-26 기판 처리 장치 및 기판 처리 방법
US13/727,671 US8828183B2 (en) 2011-12-28 2012-12-27 Substrate processing apparatus and substrate processing method
US14/447,029 US9859136B2 (en) 2011-12-28 2014-07-30 Substrate processing apparatus and substrate processing method
KR1020170134117A KR102009083B1 (ko) 2011-12-28 2017-10-16 기판 처리 장치
US15/823,691 US10707102B2 (en) 2011-12-28 2017-11-28 Substrate processing apparatus and substrate processing method
KR1020190093925A KR102142220B1 (ko) 2011-12-28 2019-08-01 기판 처리 장치 및 기판 처리 방법
US16/890,332 US11437252B2 (en) 2011-12-28 2020-06-02 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011289320 2011-12-28
JP2011289320 2011-12-28
JP2012243723A JP5996381B2 (ja) 2011-12-28 2012-11-05 基板処理装置および基板処理方法

Publications (3)

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JP2013153135A JP2013153135A (ja) 2013-08-08
JP2013153135A5 JP2013153135A5 (https=) 2015-03-12
JP5996381B2 true JP5996381B2 (ja) 2016-09-21

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US (4) US8828183B2 (https=)
JP (1) JP5996381B2 (https=)
KR (3) KR101789111B1 (https=)
TW (4) TWI706495B (https=)

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TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6100487B2 (ja) * 2012-08-20 2017-03-22 株式会社Screenホールディングス 基板処理装置
JP6148475B2 (ja) 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法
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TW201443272A (zh) * 2013-02-20 2014-11-16 應用材料股份有限公司 基板的壓差吸附之裝置與方法
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TWI569349B (zh) * 2013-09-27 2017-02-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6240450B2 (ja) * 2013-09-27 2017-11-29 株式会社Screenホールディングス 基板処理装置および基板処理方法
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JP6195803B2 (ja) * 2014-05-02 2017-09-13 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体

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Publication number Publication date
KR20130076735A (ko) 2013-07-08
KR102009083B1 (ko) 2019-08-08
JP2013153135A (ja) 2013-08-08
US9859136B2 (en) 2018-01-02
US10707102B2 (en) 2020-07-07
TWI643284B (zh) 2018-12-01
TW201717303A (zh) 2017-05-16
TWI578424B (zh) 2017-04-11
TWI706495B (zh) 2020-10-01
KR102142220B1 (ko) 2020-08-06
US8828183B2 (en) 2014-09-09
KR101789111B1 (ko) 2017-10-23
US11437252B2 (en) 2022-09-06
TW201931501A (zh) 2019-08-01
KR20170120057A (ko) 2017-10-30
TW201338075A (zh) 2013-09-16
US20130171831A1 (en) 2013-07-04
TWI689026B (zh) 2020-03-21
US20140374022A1 (en) 2014-12-25
US20200328095A1 (en) 2020-10-15
TW201717304A (zh) 2017-05-16
KR20190094324A (ko) 2019-08-13
US20180108544A1 (en) 2018-04-19

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