KR101789111B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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KR101789111B1
KR101789111B1 KR1020120152923A KR20120152923A KR101789111B1 KR 101789111 B1 KR101789111 B1 KR 101789111B1 KR 1020120152923 A KR1020120152923 A KR 1020120152923A KR 20120152923 A KR20120152923 A KR 20120152923A KR 101789111 B1 KR101789111 B1 KR 101789111B1
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gas
wafer
substrate
supplying
processing liquid
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KR20130076735A (ko
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히로미츠 남바
피트리안토
요이치 도쿠나가
요시후미 아마노
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

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  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
KR1020120152923A 2011-12-28 2012-12-26 기판 처리 장치 및 기판 처리 방법 Active KR101789111B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2011-289320 2011-12-28
JP2011289320 2011-12-28
JP2012243723A JP5996381B2 (ja) 2011-12-28 2012-11-05 基板処理装置および基板処理方法
JPJP-P-2012-243723 2012-11-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170134117A Division KR102009083B1 (ko) 2011-12-28 2017-10-16 기판 처리 장치

Publications (2)

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KR20130076735A KR20130076735A (ko) 2013-07-08
KR101789111B1 true KR101789111B1 (ko) 2017-10-23

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KR1020120152923A Active KR101789111B1 (ko) 2011-12-28 2012-12-26 기판 처리 장치 및 기판 처리 방법
KR1020170134117A Active KR102009083B1 (ko) 2011-12-28 2017-10-16 기판 처리 장치
KR1020190093925A Active KR102142220B1 (ko) 2011-12-28 2019-08-01 기판 처리 장치 및 기판 처리 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020170134117A Active KR102009083B1 (ko) 2011-12-28 2017-10-16 기판 처리 장치
KR1020190093925A Active KR102142220B1 (ko) 2011-12-28 2019-08-01 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
US (4) US8828183B2 (https=)
JP (1) JP5996381B2 (https=)
KR (3) KR101789111B1 (https=)
TW (4) TWI706495B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240363348A1 (en) * 2021-03-31 2024-10-31 Applied Materials, Inc. Methods and apparatus for mask patterning debris removal

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TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6100487B2 (ja) * 2012-08-20 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6148475B2 (ja) 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法
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KR102091291B1 (ko) * 2013-02-14 2020-03-19 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
TW201443272A (zh) * 2013-02-20 2014-11-16 應用材料股份有限公司 基板的壓差吸附之裝置與方法
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JP6137986B2 (ja) * 2013-08-07 2017-05-31 株式会社荏原製作所 基板洗浄及び乾燥装置
TWI569349B (zh) * 2013-09-27 2017-02-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6240450B2 (ja) * 2013-09-27 2017-11-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101673061B1 (ko) 2013-12-03 2016-11-04 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6190278B2 (ja) * 2014-01-08 2017-08-30 東京エレクトロン株式会社 熱交換システム及び同熱交換システムを有する基板処理装置
JP6330998B2 (ja) * 2014-02-17 2018-05-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
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JP6329428B2 (ja) * 2014-05-09 2018-05-23 東京エレクトロン株式会社 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
JP6318869B2 (ja) * 2014-05-30 2018-05-09 東京エレクトロン株式会社 成膜装置
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TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
JP6453168B2 (ja) * 2015-06-18 2019-01-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
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JP6845696B2 (ja) * 2016-02-25 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置、基板処理方法及び基板の製造方法
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Publication number Priority date Publication date Assignee Title
US20240363348A1 (en) * 2021-03-31 2024-10-31 Applied Materials, Inc. Methods and apparatus for mask patterning debris removal
US12437999B2 (en) * 2021-03-31 2025-10-07 Applied Materials, Inc. Methods and apparatus for mask patterning debris removal

Also Published As

Publication number Publication date
KR20130076735A (ko) 2013-07-08
KR102009083B1 (ko) 2019-08-08
JP2013153135A (ja) 2013-08-08
US9859136B2 (en) 2018-01-02
US10707102B2 (en) 2020-07-07
TWI643284B (zh) 2018-12-01
TW201717303A (zh) 2017-05-16
TWI578424B (zh) 2017-04-11
TWI706495B (zh) 2020-10-01
KR102142220B1 (ko) 2020-08-06
US8828183B2 (en) 2014-09-09
US11437252B2 (en) 2022-09-06
TW201931501A (zh) 2019-08-01
KR20170120057A (ko) 2017-10-30
TW201338075A (zh) 2013-09-16
US20130171831A1 (en) 2013-07-04
TWI689026B (zh) 2020-03-21
JP5996381B2 (ja) 2016-09-21
US20140374022A1 (en) 2014-12-25
US20200328095A1 (en) 2020-10-15
TW201717304A (zh) 2017-05-16
KR20190094324A (ko) 2019-08-13
US20180108544A1 (en) 2018-04-19

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