JP5981753B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5981753B2
JP5981753B2 JP2012086058A JP2012086058A JP5981753B2 JP 5981753 B2 JP5981753 B2 JP 5981753B2 JP 2012086058 A JP2012086058 A JP 2012086058A JP 2012086058 A JP2012086058 A JP 2012086058A JP 5981753 B2 JP5981753 B2 JP 5981753B2
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film
oxide semiconductor
transistor
layer
semiconductor layer
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JP2012227521A (ja
JP2012227521A5 (enExample
Inventor
裕平 佐藤
裕平 佐藤
恵司 佐藤
恵司 佐藤
俊成 佐々木
俊成 佐々木
哲紀 丸山
哲紀 丸山
磯部　敦生
敦生 磯部
努 村川
努 村川
祐朗 手塚
祐朗 手塚
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012086058A 2011-04-06 2012-04-05 半導体装置の作製方法 Active JP5981753B2 (ja)

Priority Applications (1)

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JP2012086058A JP5981753B2 (ja) 2011-04-06 2012-04-05 半導体装置の作製方法

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JP2011084389 2011-04-06
JP2011084389 2011-04-06
JP2012086058A JP5981753B2 (ja) 2011-04-06 2012-04-05 半導体装置の作製方法

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JP2016114124A Division JP6225220B2 (ja) 2011-04-06 2016-06-08 トランジスタの作製方法

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JP2012227521A JP2012227521A (ja) 2012-11-15
JP2012227521A5 JP2012227521A5 (enExample) 2015-05-21
JP5981753B2 true JP5981753B2 (ja) 2016-08-31

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US (2) US9960278B2 (enExample)
JP (2) JP5981753B2 (enExample)
KR (2) KR101961847B1 (enExample)
CN (2) CN107424927B (enExample)
TW (2) TWI562366B (enExample)

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JP6751613B2 (ja) * 2016-07-15 2020-09-09 株式会社ジャパンディスプレイ 表示装置
JP6736430B2 (ja) * 2016-09-05 2020-08-05 株式会社ジャパンディスプレイ 半導体装置
JP7022592B2 (ja) * 2018-01-11 2022-02-18 株式会社ジャパンディスプレイ 表示装置
KR20210068526A (ko) 2018-10-10 2021-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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JP2021150524A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置
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