TWI562366B - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
TWI562366B
TWI562366B TW101112064A TW101112064A TWI562366B TW I562366 B TWI562366 B TW I562366B TW 101112064 A TW101112064 A TW 101112064A TW 101112064 A TW101112064 A TW 101112064A TW I562366 B TWI562366 B TW I562366B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
TW101112064A
Other languages
English (en)
Other versions
TW201306262A (zh
Inventor
Yuhei Sato
Keiji Sato
Toshinari Sasaki
Tetsunori Maruyama
Atsuo Isobe
Tsutomu Murakawa
Sachiaki Tezuka
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of TW201306262A publication Critical patent/TW201306262A/zh
Application granted granted Critical
Publication of TWI562366B publication Critical patent/TWI562366B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW101112064A 2011-04-06 2012-04-05 Manufacturing method of semiconductor device TWI562366B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011084389 2011-04-06

Publications (2)

Publication Number Publication Date
TW201306262A TW201306262A (zh) 2013-02-01
TWI562366B true TWI562366B (en) 2016-12-11

Family

ID=46966426

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105130628A TWI632684B (zh) 2011-04-06 2012-04-05 半導體裝置的製造方法
TW101112064A TWI562366B (en) 2011-04-06 2012-04-05 Manufacturing method of semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW105130628A TWI632684B (zh) 2011-04-06 2012-04-05 半導體裝置的製造方法

Country Status (5)

Country Link
US (2) US9960278B2 (zh)
JP (2) JP5981753B2 (zh)
KR (2) KR101961847B1 (zh)
CN (2) CN102738002B (zh)
TW (2) TWI632684B (zh)

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KR20220100086A (ko) 2009-07-10 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US9527043B2 (en) 2012-05-17 2016-12-27 Samsung Electronics Co., Ltd. Gas separation membrane and method of preparing the same
KR101920716B1 (ko) * 2012-05-17 2019-02-13 삼성전자주식회사 기체 분리막 및 그 제조방법
KR102001057B1 (ko) 2012-10-31 2019-07-18 엘지디스플레이 주식회사 어레이 기판의 제조방법
JP6121149B2 (ja) * 2012-11-28 2017-04-26 富士フイルム株式会社 酸化物半導体素子、酸化物半導体素子の製造方法、表示装置及びイメージセンサ
US8981359B2 (en) 2012-12-21 2015-03-17 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
JP6152729B2 (ja) * 2013-03-26 2017-06-28 ソニー株式会社 撮像装置および撮像表示システム
KR102537022B1 (ko) 2013-05-20 2023-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TWI633668B (zh) * 2013-09-23 2018-08-21 半導體能源研究所股份有限公司 半導體裝置
JP6498967B2 (ja) * 2015-03-10 2019-04-10 東ソー・ファインケム株式会社 パッシベーション膜の製造方法、パッシベーション膜、それを用いた太陽電池素子
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6725335B2 (ja) 2016-06-20 2020-07-15 株式会社ジャパンディスプレイ 半導体装置
JP6751613B2 (ja) * 2016-07-15 2020-09-09 株式会社ジャパンディスプレイ 表示装置
JP6736430B2 (ja) * 2016-09-05 2020-08-05 株式会社ジャパンディスプレイ 半導体装置
JP7022592B2 (ja) * 2018-01-11 2022-02-18 株式会社ジャパンディスプレイ 表示装置
WO2020074993A1 (ja) 2018-10-10 2020-04-16 株式会社半導体エネルギー研究所 半導体装置
US11121263B2 (en) 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same
JP2021150524A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置
CN111403352A (zh) * 2020-03-24 2020-07-10 长江存储科技有限责任公司 一种三维存储器、cmos晶体管及其制造方法

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