JP5948070B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5948070B2
JP5948070B2 JP2012019471A JP2012019471A JP5948070B2 JP 5948070 B2 JP5948070 B2 JP 5948070B2 JP 2012019471 A JP2012019471 A JP 2012019471A JP 2012019471 A JP2012019471 A JP 2012019471A JP 5948070 B2 JP5948070 B2 JP 5948070B2
Authority
JP
Japan
Prior art keywords
insulating layer
oxide semiconductor
transistor
film
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012019471A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012256838A (ja
JP2012256838A5 (enrdf_load_stackoverflow
Inventor
宏充 郷戸
宏充 郷戸
聡 小林
聡 小林
将志 津吹
将志 津吹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012019471A priority Critical patent/JP5948070B2/ja
Publication of JP2012256838A publication Critical patent/JP2012256838A/ja
Publication of JP2012256838A5 publication Critical patent/JP2012256838A5/ja
Application granted granted Critical
Publication of JP5948070B2 publication Critical patent/JP5948070B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012019471A 2011-02-02 2012-02-01 半導体装置 Active JP5948070B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012019471A JP5948070B2 (ja) 2011-02-02 2012-02-01 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011021042 2011-02-02
JP2011021042 2011-02-02
JP2011108901 2011-05-14
JP2011108901 2011-05-14
JP2012019471A JP5948070B2 (ja) 2011-02-02 2012-02-01 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015003748A Division JP6009588B2 (ja) 2011-02-02 2015-01-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2012256838A JP2012256838A (ja) 2012-12-27
JP2012256838A5 JP2012256838A5 (enrdf_load_stackoverflow) 2015-02-26
JP5948070B2 true JP5948070B2 (ja) 2016-07-06

Family

ID=46576594

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2012019471A Active JP5948070B2 (ja) 2011-02-02 2012-02-01 半導体装置
JP2015003748A Active JP6009588B2 (ja) 2011-02-02 2015-01-12 半導体装置
JP2016179126A Expired - Fee Related JP6498641B2 (ja) 2011-02-02 2016-09-14 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015003748A Active JP6009588B2 (ja) 2011-02-02 2015-01-12 半導体装置
JP2016179126A Expired - Fee Related JP6498641B2 (ja) 2011-02-02 2016-09-14 半導体装置

Country Status (2)

Country Link
US (1) US9799773B2 (enrdf_load_stackoverflow)
JP (3) JP5948070B2 (enrdf_load_stackoverflow)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120244693A1 (en) * 2011-03-22 2012-09-27 Tokyo Electron Limited Method for patterning a full metal gate structure
KR101961426B1 (ko) * 2012-05-30 2019-03-25 삼성디스플레이 주식회사 박막 트랜지스터 및 그 형성 방법
US8946002B2 (en) 2012-07-24 2015-02-03 Semiconductor Components Industries, Llc Method of forming a semiconductor device having a patterned gate dielectric and structure therefor
US8947158B2 (en) * 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TWI600157B (zh) 2012-11-16 2017-09-21 半導體能源研究所股份有限公司 半導體裝置
US9231111B2 (en) * 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102014208859B4 (de) 2013-05-20 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
JPWO2014189125A1 (ja) * 2013-05-24 2017-02-23 株式会社フジクラ 薄膜トランジスタ及びマトリクス回路
JP5740535B1 (ja) * 2013-07-19 2015-06-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6246518B2 (ja) * 2013-07-29 2017-12-13 株式会社半導体エネルギー研究所 トランジスタ
TWI643435B (zh) 2013-08-21 2018-12-01 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
TWI566405B (zh) * 2013-11-08 2017-01-11 元太科技工業股份有限公司 有機無機混合型電晶體
US20150179446A1 (en) * 2013-12-20 2015-06-25 Lg Display Co., Ltd. Methods for Forming Crystalline IGZO Through Processing Condition Optimization
KR102159684B1 (ko) 2014-02-17 2020-09-25 삼성디스플레이 주식회사 박막 트랜지스터
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP2016027608A (ja) 2014-03-14 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
JP2016025100A (ja) * 2014-07-16 2016-02-08 株式会社Ｊｏｌｅｄ 半導体装置、表示装置および電子機器
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
KR20240046304A (ko) * 2015-03-03 2024-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 그 제작 방법, 또는 그를 포함하는 표시 장치
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102330497B1 (ko) 2015-06-02 2021-11-24 삼성디스플레이 주식회사 게이트 구동 회로 및 이를 포함하는 표시 장치
DE102015008438A1 (de) * 2015-06-30 2017-01-05 Airbus Defence and Space GmbH Filme und Beschichtungen aus nanoskaligen Graphen-Plättchen
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
JP6920785B2 (ja) * 2015-08-19 2021-08-18 株式会社ジャパンディスプレイ 表示装置
JP6611521B2 (ja) * 2015-08-25 2019-11-27 三菱電機株式会社 薄膜トランジスタ及びアレイ基板
TWI593090B (zh) * 2015-12-24 2017-07-21 友達光電股份有限公司 畫素結構、其製作方法與薄膜電晶體
DE112016006619T5 (de) 2016-03-18 2018-12-06 Mitsubishi Electric Corporation Dünnschichttransistor, Dünnschichttransistor-Substrat, Flüssigkristallanzeigevorrichtung und Verfahren zur Herstellung eines Dünnschichttransistors
KR102652370B1 (ko) * 2017-02-15 2024-03-27 삼성전자주식회사 박막 트랜지스터, 그 제조 방법, 및 박막 트랜지스터를 포함하는 전자 기기
TWI662347B (zh) * 2017-12-14 2019-06-11 友達光電股份有限公司 畫素結構
JP2019197128A (ja) * 2018-05-09 2019-11-14 三菱電機株式会社 表示装置
US20210280719A1 (en) * 2019-06-04 2021-09-09 Applied Materials, Inc. High mobility semiconductor channel based thin-film transistors and manufacturing methods
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
CN113270479A (zh) * 2021-05-19 2021-08-17 东南大学 一种高功率密度igzo薄膜晶体管
CN113471296B (zh) * 2021-05-28 2024-03-15 北京机械设备研究所 一种高电压薄膜晶体管
CN113471077B (zh) * 2021-05-28 2024-05-31 北京机械设备研究所 一种高电压薄膜晶体管的制备方法

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2009100A (en) 1931-01-08 1935-07-23 Bendix Brake Co Brake
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JP3087363B2 (ja) 1991-08-23 2000-09-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3332055B2 (ja) 1993-11-04 2002-10-07 カシオ計算機株式会社 薄膜トランジスタの製造方法
JP3548237B2 (ja) * 1994-08-29 2004-07-28 シャープ株式会社 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
KR100394896B1 (ko) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 투명스위칭소자를포함하는반도체장치
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH10173190A (ja) 1996-12-06 1998-06-26 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP4651773B2 (ja) 1999-04-06 2011-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6346730B1 (en) 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP2004165621A (ja) 2002-09-20 2004-06-10 Seiko Epson Corp 半導体装置、電気光学装置、電子機器、半導体装置の製造方法
JP2004165622A (ja) 2002-09-20 2004-06-10 Seiko Epson Corp 半導体装置、電気光学装置、電子機器、半導体装置の製造方法
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005079283A (ja) 2003-08-29 2005-03-24 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP4620046B2 (ja) 2004-03-12 2011-01-26 独立行政法人科学技術振興機構 薄膜トランジスタ及びその製造方法
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
EP2455975B1 (en) 2004-11-10 2015-10-28 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
KR100889796B1 (ko) 2004-11-10 2009-03-20 캐논 가부시끼가이샤 비정질 산화물을 사용한 전계 효과 트랜지스터
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI390735B (zh) 2005-01-28 2013-03-21 Semiconductor Energy Lab 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI412138B (zh) 2005-01-28 2013-10-11 Semiconductor Energy Lab 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101577256B (zh) 2005-11-15 2011-07-27 株式会社半导体能源研究所 半导体器件及其制造方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR101312259B1 (ko) 2007-02-09 2013-09-25 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5068149B2 (ja) 2007-11-29 2012-11-07 株式会社ジャパンディスプレイウェスト 光センサ素子、光センサ素子の駆動方法、表示装置、および表示装置の駆動方法
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP2009253204A (ja) * 2008-04-10 2009-10-29 Idemitsu Kosan Co Ltd 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
JP5337414B2 (ja) 2008-06-24 2013-11-06 株式会社ジャパンディスプレイ 表示装置およびその製造方法
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JPWO2010047077A1 (ja) * 2008-10-23 2012-03-22 出光興産株式会社 薄膜トランジスタ及びその製造方法
CN102257621B (zh) 2008-12-19 2013-08-21 株式会社半导体能源研究所 晶体管的制造方法
JP2010206154A (ja) * 2009-02-09 2010-09-16 Hitachi Displays Ltd 表示装置
TWI617029B (zh) 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 半導體裝置
US20100244017A1 (en) 2009-03-31 2010-09-30 Randy Hoffman Thin-film transistor (tft) with an extended oxide channel
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI476917B (zh) * 2009-04-16 2015-03-11 Semiconductor Energy Lab 半導體裝置和其製造方法
KR102216028B1 (ko) * 2009-07-10 2021-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20110093113A (ko) * 2010-02-11 2011-08-18 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법

Also Published As

Publication number Publication date
JP2012256838A (ja) 2012-12-27
JP6498641B2 (ja) 2019-04-10
JP2016208060A (ja) 2016-12-08
US9799773B2 (en) 2017-10-24
JP2015092620A (ja) 2015-05-14
US20120193620A1 (en) 2012-08-02
JP6009588B2 (ja) 2016-10-19

Similar Documents

Publication Publication Date Title
JP6498641B2 (ja) 半導体装置
JP7436554B2 (ja) 半導体装置及びその作製方法
JP7352606B2 (ja) 半導体装置
US9508742B2 (en) Semiconductor device having switching transistor that includes oxide semiconductor material
JP6109372B2 (ja) 半導体装置の作製方法
JP5839554B2 (ja) 半導体装置
US8492806B2 (en) Non-linear element, display device including non-linear element, and electronic device including display device
JP6334770B2 (ja) コンパレータ及びその作製方法
WO2011065209A1 (en) Non-linear element, display device including non-linear element, and electronic device including display device
JP5830157B2 (ja) 半導体装置
JP5656325B2 (ja) 非線形素子、及び表示装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160205

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160531

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160606

R150 Certificate of patent or registration of utility model

Ref document number: 5948070

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250