JP5945392B2 - 発光デバイス - Google Patents

発光デバイス Download PDF

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Publication number
JP5945392B2
JP5945392B2 JP2011197317A JP2011197317A JP5945392B2 JP 5945392 B2 JP5945392 B2 JP 5945392B2 JP 2011197317 A JP2011197317 A JP 2011197317A JP 2011197317 A JP2011197317 A JP 2011197317A JP 5945392 B2 JP5945392 B2 JP 5945392B2
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JP
Japan
Prior art keywords
light emitting
semiconductor
emitting element
semiconductor substrate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011197317A
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English (en)
Japanese (ja)
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JP2012060133A5 (enExample
JP2012060133A (ja
Inventor
ヨウン ソン、ホ
ヨウン ソン、ホ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2012060133A publication Critical patent/JP2012060133A/ja
Publication of JP2012060133A5 publication Critical patent/JP2012060133A5/ja
Application granted granted Critical
Publication of JP5945392B2 publication Critical patent/JP5945392B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
JP2011197317A 2010-09-10 2011-09-09 発光デバイス Active JP5945392B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0089048 2010-09-10
KR1020100089048A KR101711961B1 (ko) 2010-09-10 2010-09-10 발광 디바이스

Publications (3)

Publication Number Publication Date
JP2012060133A JP2012060133A (ja) 2012-03-22
JP2012060133A5 JP2012060133A5 (enExample) 2014-10-30
JP5945392B2 true JP5945392B2 (ja) 2016-07-05

Family

ID=44582605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011197317A Active JP5945392B2 (ja) 2010-09-10 2011-09-09 発光デバイス

Country Status (5)

Country Link
US (1) US9006973B2 (enExample)
EP (1) EP2428991B1 (enExample)
JP (1) JP5945392B2 (enExample)
KR (1) KR101711961B1 (enExample)
CN (1) CN102403309B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751296B (zh) * 2012-07-24 2015-05-20 矽光光电科技（上海）有限公司 整合集成电路、发光元件及传感元件的单衬底器件
WO2014154023A1 (en) * 2013-03-25 2014-10-02 The Hong Kong University Of Science And Technology Power system-on-chip architecture
EP3022779B1 (en) * 2013-07-19 2020-03-18 Lumileds Holding B.V. Pc led with optical element and without substrate carrier
TWM496091U (zh) * 2014-03-26 2015-02-21 賀喜能源股份有限公司 具矽基座的發光二極體及發光二極體燈具
DE102014105734A1 (de) * 2014-04-23 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP6736260B2 (ja) * 2015-05-13 2020-08-05 ローム株式会社 半導体発光装置
US20170104135A1 (en) * 2015-10-13 2017-04-13 Sensor Electronic Technology, Inc. Light Emitting Diode Mounting Structure
EP3783759B1 (en) * 2018-04-19 2024-05-01 Sony Semiconductor Solutions Corporation Semiconductor laser drive device and method for manufacturing same
WO2020122037A1 (ja) * 2018-12-11 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
CN113594194B (zh) * 2020-04-30 2024-09-17 华为机器有限公司 一种堆叠结构、显示屏及显示装置
KR102557580B1 (ko) * 2021-01-05 2023-07-20 엘지전자 주식회사 반도체 발광 소자 패키지 및 디스플레이 장치

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JPS63111682A (ja) * 1986-10-29 1988-05-16 Mitsubishi Electric Corp 光半導体素子用サブマウント
EP0921577A4 (en) 1997-01-31 2007-10-31 Matsushita Electric Industrial Co Ltd LIGHT-EMITTING COMPONENT; SEMICONDUCTOR LIGHT EMITTING DEVICE, AND ITS MANUFACTURING METHOD
US6777883B2 (en) 2002-04-10 2004-08-17 Koninklijke Philips Electronics N.V. Integrated LED drive electronics on silicon-on-insulator integrated circuits
US20040206970A1 (en) 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
JP2005142294A (ja) 2003-11-05 2005-06-02 Matsushita Electric Ind Co Ltd 半導体レーザユニットおよびそれを用いた光ピックアップ装置
CN1943049A (zh) * 2004-04-19 2007-04-04 松下电器产业株式会社 发光元件驱动用半导体芯片、发光装置以及照明装置
CN101032034A (zh) 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
KR100927256B1 (ko) 2004-07-09 2009-11-16 엘지전자 주식회사 제너다이오드가 집적된 발광소자 서브마운트 제작방법
US7221044B2 (en) 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
JP4601464B2 (ja) * 2005-03-10 2010-12-22 株式会社沖データ 半導体装置、プリントヘッド、及びそれを用いた画像形成装置
US8076680B2 (en) 2005-03-11 2011-12-13 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
KR101241973B1 (ko) 2005-03-11 2013-03-08 서울반도체 주식회사 발광 장치 및 이의 제조 방법
US7495944B2 (en) 2005-03-30 2009-02-24 Ovonyx, Inc. Reading phase change memories
JP4969055B2 (ja) * 2005-04-28 2012-07-04 ローム株式会社 光通信モジュール
US7994514B2 (en) 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
US7655957B2 (en) 2006-04-27 2010-02-02 Cree, Inc. Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same
KR101134752B1 (ko) 2006-07-14 2012-04-13 엘지이노텍 주식회사 Ｌｅｄ 패키지
CN101154656B (zh) 2006-09-30 2010-05-12 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法
WO2008123020A1 (ja) * 2007-03-09 2008-10-16 Sanyo Electric Co., Ltd. 半導体装置及びその製造方法
JP2008235792A (ja) * 2007-03-23 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US8436371B2 (en) * 2007-05-24 2013-05-07 Cree, Inc. Microscale optoelectronic device packages
KR100878326B1 (ko) 2007-07-03 2009-01-14 한국광기술원 칩스케일 패키징 발광소자 및 그의 제조방법
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP5102605B2 (ja) 2007-12-25 2012-12-19 パナソニック株式会社 発光装置およびその製造方法
JP5475954B2 (ja) * 2008-01-28 2014-04-16 パナソニック株式会社 発光装置
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)

Also Published As

Publication number Publication date
EP2428991A3 (en) 2014-06-11
CN102403309A (zh) 2012-04-04
KR20120026873A (ko) 2012-03-20
KR101711961B1 (ko) 2017-03-03
US9006973B2 (en) 2015-04-14
CN102403309B (zh) 2015-09-16
EP2428991A2 (en) 2012-03-14
US20120062115A1 (en) 2012-03-15
JP2012060133A (ja) 2012-03-22
EP2428991B1 (en) 2019-02-20

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