TWM496091U - 具矽基座的發光二極體及發光二極體燈具 - Google Patents
具矽基座的發光二極體及發光二極體燈具 Download PDFInfo
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- TWM496091U TWM496091U TW103218594U TW103218594U TWM496091U TW M496091 U TWM496091 U TW M496091U TW 103218594 U TW103218594 U TW 103218594U TW 103218594 U TW103218594 U TW 103218594U TW M496091 U TWM496091 U TW M496091U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 230000017525 heat dissipation Effects 0.000 claims description 57
- 230000008018 melting Effects 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 24
- 229910000679 solder Inorganic materials 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 230000005496 eutectics Effects 0.000 claims description 7
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 5
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 5
- 238000013461 design Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000002918 waste heat Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/003—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources
- F21V19/0055—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources by screwing
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
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- F21Y2105/00—Planar light sources
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- F21—LIGHTING
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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Description
本新型是有關於一種照明設備,特別是指一種具矽基座的發光二極體及發光二極體燈具。
無論是在商辦、學校、居家、汽車、路燈等等,一直以來都對高亮度的照明設備有所需求,常見的鹵素燈由於高電費與會造成被照射物品變質等等缺點,而不再受到市場的喜愛,漸漸地,發光二極體燈具以高亮度但低電費,改善了鹵素燈的諸多缺點並成為目前照明設備的主流。
而以往的發光二極體燈具是由發光二極體、電路板、電源控制器、散熱座所構成,除了發光二極體會產生廢熱之外,電源控制器也會產生大量廢熱,若無快速有效的散熱設計,將會使得發光二極體無法密集排列、電源控制器也須與發光二極體保持一定距離,分別造成了亮度無法提高以及發光二極體燈具的體積無法下降的缺點,此外,而由於以往的電源控制器本身的體積就已相當龐大,遠遠大於發光二極體與電路板,造成發光二極體燈具的體積也無法下降,因此發光二極體燈具的使用無法靈活便利,例如作為櫥櫃燈需佔據一定的安裝厚度與深度等。
而在本人先前的中華民國發明專利第I418736號所揭示,以
提供了一種有絕佳散熱設計的發光二極體燈具,在前揭專利所揭示的散熱設計的概念之下,如何進一步提升發光二極體燈具的商品競爭力為目前相關業界的研發重點。
因此,本新型之目的,即在提供一種更加優化的具矽基座的發光二極體。
因此,本新型之另一目的,即在提供一種可以大幅縮減體積且更加優化的發光二極體燈具。
於是,本新型具矽基座的發光二極體,包含:一矽基座,及至少一發光二極體晶片,該矽基座包括一形成於內部的電源控制積體電路、一形成於底面的P電極、一形成於底面的N電極,及一形成於底面的散熱接地部,該電源控制積體電路與該P電極和該N電極電連接,該發光二極體晶片共晶貼合於該矽基座頂面,該發光二極體晶片與該P電極和該N電極電連接,其中,定義一散熱通道,是由該發光二極體晶片經該矽基座內部至該散熱接地部。
而本新型發光二極體燈具包含一散熱座、一電路板、至少一發光二極體,及一對電線,該散熱座包括一平坦的基面,及多個自該基面凸起的散熱高台,該電路板包括一對應接觸該散熱座基面的散熱底面,及多個對應該等散熱高台開設的槽道,該等散熱高台位於該等槽道中,該發光二極體設置於該電路板槽道上且位於該散熱座的散熱高台頂面,該發光二極體包括一矽基座及至少一發光二極體晶片,該矽基座包括一形成於內部的電源控制積體電路、一形成於底面的P電極、一形成於底面的N電極,
及一形成於底面的散熱接地部,該電源控制積體電路與該P電極和該N電極電連接,該發光二極體晶片共晶貼合於該矽基座頂面,該發光二極體晶片與該P電極和該N電極電連接,其中,定義一散熱通道,是由該發光二極體晶片經該矽基座內部至該散熱接地部,該對電線用於連接該電路板於外部電源。
本新型之功效在於,由於該發光二極體燈具有絕佳的散熱設計,而能將該電源控制積體電路直接設計於該矽基座內部,取代以往的電源控制器,提供了更加優化的發光二極體,也能因此而大幅縮減發光二極體燈具的體積,確實達成本新型之目的。
1‧‧‧散熱座
11‧‧‧基面
12‧‧‧散熱高台
2‧‧‧電路板
21‧‧‧散熱底面
22‧‧‧槽道
3‧‧‧發光二極體
31‧‧‧矽基座
311‧‧‧電源控制積體電路
312‧‧‧P電極
313‧‧‧N電極
314‧‧‧散熱接地部
315‧‧‧散熱通道
32‧‧‧發光二極體晶片
4‧‧‧電線
5‧‧‧介面合金層
61‧‧‧高熔點焊錫
62‧‧‧低熔點焊錫
本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一個立體分解示意圖,說明本新型具矽基座的發光二極體及發光二極體燈具的第一較佳實施例;圖2是一個立體示意圖,說明本第一較佳實施例的一散熱座、一電路板、多個發光二極體,及一對電線;圖3是一個剖面示意圖,說明本第一較佳實施例發光二極體的一矽基座及多個發光二極體晶片;圖4是一個頂視示意圖,說明本第一較佳實施例發光二極體的該矽基座及多個發光二極體晶片;圖5是一個底視示意圖,說明本第一較佳實施例的一P電極、一N電極及一散熱接地部;及圖6是一個底視示意圖,說明本新型具矽基座的發光二極體及發光二
極體燈具的第二較佳實施例。
在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。
參閱圖1、圖2與圖3,本新型具矽基座的發光二極體及發光二極體燈具的第一較佳實施例,該發光二極體燈具包含一散熱座1、一電路板2、多個發光二極體3、一對電線4,及一介面合金層5。
該散熱座1包括一平坦的基面11,及多個自該基面11凸起的散熱高台12,該散熱座1可以是具有380W/m.K的熱傳係數的銅所製成,或是具有237W/m.K的熱傳係數的鋁所製成,都可以快速排熱。
該電路板2包括一對應接觸該散熱座1基面11的散熱底面21,及多個對應該等散熱高台12開設的槽道22,該等散熱高台12分別對應位於該電路板2的該等槽道22中。
該等發光二極體3設置於該電路板2槽道22上且位於該散熱座1的散熱高台12頂面。該等發光二極體3分別包括一矽基座31及多個發光二極體晶片32。
配合參閱圖4與圖5,該矽基座31的材質為矽,矽具有170W/m.K的熱傳係數,該矽基座31包括一形成於內部的電源控制積體電路311、一形成於底面的P電極312、一形成於底面的N電極313,及一形成於底面的散熱接地部314,該電源控制積體電路311與該P電極312和該N電極313電連接,其中,定義一散熱通道315,是由該等發光二極體晶片32經該矽基
座31內部至該散熱接地部314,該散熱通道315為垂直向下。
該電源控制積體電路311是利用半導體磊晶成長成積體電路的技術,來將電容、電感、電阻等等設計為積體電路之後形成於該矽基座31的內部。
該散熱接地部314的其中一功能為接地功能,根據國際電工委員會所訂定的燈具照明標準,具有接地功能的發光二極體燈具耐壓下限值為500VAC,而本第一較佳實施例中,該等發光二極體3的耐壓高達700VAC。
該散熱接地部314的另一功能為散熱,能夠將該電源控制積體電路311以及該等發光二極體晶片32的熱由此處傳導向外,而由於該散熱接地部314與該散熱座1的散熱高台12相接,使該散熱座1有效地帶走該矽基座31中的廢熱。
也就是說,在本第一較佳實施例中,該散熱通道315與接地功能共用了該散熱接地部314,更進一步說明的是,該電源控制積體電路311繞該散熱通道315設置,此設計的考量在於,相較於該電源控制積體電路311來說,該等發光二極體晶片32更需要絕佳的散熱效果,因此將該散熱通道315上的空間單純作為散熱用,在前述的該散熱通道315的空間不會去設置或形成有該電源控制積體電路311,就能夠將該等發光二極體晶片32的熱更快地傳導向外。
該矽基座31的該電源控制積體電路311都可以因應不同的外部電源而設計,而讓外部電源可以適用於20W的發光二極體3或是30W的發光二極體3等等,讓電壓電流可以互相匹配,控制單一一個發光二極體3所
分配到的電壓值,能避免發光二極體3燒壞,此外,該電源控制積體電路311可以控制該等發光二極體3的亮度。
而由於該矽基座31內部的電源控制積體電路311以取代了以往發光二極體燈具中的電源控制器,就能省略以往發光二極體燈具為電源控制器所做的散熱座,而以往受限於散熱設計未能將該電源控制積體電路311與該等發光二極體晶片32做在一起,但經由本人先前的中華民國新型專利第I418736號,而能突破以往的技術瓶頸。
在以往,該等發光二極體3的基座可以是氧化鋁或氮化鋁等其他的材質製成,例如飛利浦公司就以氧化鋁包圍氮化鋁的方式作為基座,而雖然氮化鋁相較於矽有較高的熱傳係數,但基本上只有傳熱與絕緣的效果,因此仍以矽為最佳的半導體磊晶成長該電源控制積體電路311的材料。
值得一提的是,本第一較佳實施例中,該矽基座31還可以設計有包括一溫度控制積體電路、一變色控制積體電路等等,該溫度控制積體電路與該變色控制積體電路都可以利用與該電源控制積體電路311相同的半導體磊晶技術形成於該矽基座31的內部。(圖未示)
該等發光二極體晶片32共晶貼合於該矽基座31頂面,該等發光二極體晶片32分別與該P電極312和該N電極313電連接,在本第一較佳實施例中,該等發光二極體晶片32材質為氮化鎵,由於氮化鎵與矽之間的晶格不匹配,所以不能直接由該矽基座31上以半導體磊晶技術直接成長該等發光二極體晶片32,因此使用共晶貼合的方式來解決安裝問題,且共晶貼合的良率高,散熱效率也高於銀膠貼合的設計。
該對電線4用於連接該電路板2於外部電源,例如直流電或交流電,直流電可以是來自太陽能或電池等等,直流電規格可以為12V或24V等等,交流電的規格可以是110V或210V等等。
該介面合金層5位於該等發光二極體3的矽基座31的散熱接地部314與該等散熱座1的散熱高台12頂面間。
該散熱座1與該電路板2使用高熔點焊錫61焊固,該等發光二極體3與該散熱座1與電路板2分別皆使用低熔點焊錫62焊固,高熔點焊錫61熔點為260℃,低熔點焊錫62熔點為150℃。
焊接的順序為,先將該電路板2與該散熱座1使用高熔點焊錫61焊固之後,再將該等發光二極體3與該散熱座1與該電路板2使用低熔點焊錫62焊固,而由於低熔點焊錫62熔點較高熔點焊錫61低,因此,在後續焊接該等發光二極體3與該散熱座1與該電路板2時,不會將該電路板2與該散熱座1間的高熔點焊錫61焊錫融熔。
該散熱座1的散熱高台12頂面加上該介面合金層5的高度高於該電路板2,該介面合金層5的厚度為小於0.03mm,以避免該等發光二極體3因距離該電路板2過遠而造成空焊等接觸不良的現象,該矽基座31的散熱接地部314與該散熱座1散熱高台12頂面皆形成有金錫合金層,使該散熱座1在焊接前後都保持無氧純銅、無氧純鋁的高熱傳係數,金錫合金層焊接後則形成介面合金層5,該矽基座31的散熱接地部314與該散熱座1散熱高台12頂面間可以利用低熔點焊錫62填補空氣縫隙,該等發光二極體3與該散熱座1連結的更緊密,且焊接完成後所留下的低熔點焊錫62非常薄,透過低熔點焊錫62填補空氣縫隙而避免空氣降低散熱效果,能有效提高該等發光二極
體3與該散熱座1的接觸面積,進而提升散熱效果,此外,在焊接前,金錫合金層的金屬成分金可以利用本身惰性避免該散熱座1氧化,焊接時則利用金錫合金層的金屬成分錫來降低熔點,避免高熔點焊錫61焊錫融熔。
更進一步說明的是,由於該散熱座1的散熱高台12頂面高度不低於該電路板2,在焊接時使用預定壓力施壓使該等發光二極體3與該散熱座1的介面合金層5厚度薄且均勻。
參閱圖6,本新型具矽基座的發光二極體及發光二極體燈具的第二較佳實施例與第一較佳實施例大致相同,不同之處在於,該P電極312、該N電極313與該散熱接地部314的位置配置不同於第一較佳實施例,本第二較佳實施例中,該P電極312與該N電極313並列於一側,而該散熱接地部314位於另一側。
綜上所述,本新型的功效在於:由於該發光二極體燈具有絕佳的散熱設計,而能將該電源控制積體電路311直接設計於該矽基座31內部,取代以往的電源控制器,提供了更加優化的發光二極體3,本新型在功率20.425W之下,就能夠有1916.960Lm的光通量,大幅提升產品性能,也能因此而大幅縮減發光二極體燈具的體積,確實達成本新型之目的。
惟以上所述者,僅為本新型之較佳實施例而已,當不能以此限定本新型實施之範圍,即大凡依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。
1‧‧‧散熱座
11‧‧‧基面
12‧‧‧散熱高台
2‧‧‧電路板
21‧‧‧散熱底面
22‧‧‧槽道
3‧‧‧發光二極體
31‧‧‧矽基座
311‧‧‧電源控制積體電路
314‧‧‧散熱接地部
315‧‧‧散熱通道
32‧‧‧發光二極體晶片
5‧‧‧介面合金層
61‧‧‧高熔點焊錫
62‧‧‧低熔點焊錫
Claims (15)
- 一種具矽基座的發光二極體,包含:一矽基座,包括形成於內部的一電源控制積體電路、形成於底面的一P電極、形成於底面的一N電極,及形成於底面的一散熱接地部,該電源控制積體電路與該P電極和該N電極電連接;及至少一發光二極體晶片,共晶貼合於該矽基座頂面,該發光二極體晶片與該P電極和該N電極電連接,其中,該矽基座定義一散熱通道,是由該發光二極體晶片經該矽基座內部至該散熱接地部。
- 如請求項1所述的具矽基座的發光二極體,其中,該電源控制積體電路繞該散熱通道設置。
- 如請求項2所述的具矽基座的發光二極體,其中,該電源控制積體電路設置於該P電極和該N電極之上。
- 如請求項1所述的具矽基座的發光二極體,其中,該散熱通道為垂直向下。
- 如請求項4所述的具矽基座的發光二極體,其中,該散熱通道連接於該散熱接地部。
- 如請求項1所述的具矽基座的發光二極體,其中,該矽基座還包括一溫度控制積體電路。
- 如請求項1所述的具矽基座的發光二極體,其中,該矽基座還包括一變色控制積體電路。
- 一種發光二極體燈具,包含: 一散熱座,包括一平坦的基面,及多個自該基面凸起的散熱高台;一電路板,包括一對應接觸該散熱座基面的散熱底面,及多個對應該等散熱高台開設的槽道,該等散熱高台位於該等槽道中;及至少一發光二極體,設置於該電路板槽道上且位於該散熱座的散熱高台頂面,每一發光二極體包括一矽基座及至少一發光二極體晶片,該矽基座包括形成於內部的一電源控制積體電路、形成於底面的一P電極、形成於底面的一N電極,及形成於底面的一散熱接地部,該電源控制積體電路與該P電極和該N電極電連接,該發光二極體晶片共晶貼合於該矽基座頂面,該發光二極體晶片與該P電極和該N電極電連接,其中,該矽基座定義一散熱通道,是由該發光二極體晶片經該矽基座內部至該散熱接地部。
- 如請求項8所述的發光二極體燈具,該散熱通道透過該散熱接地部連接該散熱高台。
- 如請求項9所述的發光二極體燈具,還包含一層位於該發光二極體的矽基座的散熱接地部與該散熱座的散熱高台頂面間的一介面合金層。
- 如請求項10所述的發光二極體燈具,其中,該散熱座的散熱高台頂面加上該介面合金層的高度高於該電路板,該介面合金層的厚度為小於0.03mm。
- 如請求項10所述的發光二極體燈具,其中,該矽基座的散熱接地部與該散熱座散熱高台頂面皆形成有金錫合金層,並共同形成該介面合金層。
- 如請求項10所述的發光二極體燈具,其中,該矽基座的散熱接地部與該散熱座之散熱高台之頂面間利用焊錫填補空氣縫隙。
- 如請求項8所述的發光二極體燈具,其中,該散熱座與該電路板使用高熔點焊錫焊固,該發光二極體與該散熱座、該發光二極體與電路板分別皆 使用低熔點焊錫焊固。
- 一種包含至少一如請求項1所述之具矽基座的發光二極體之燈具。
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JP4123105B2 (ja) * | 2003-05-26 | 2008-07-23 | 松下電工株式会社 | 発光装置 |
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JP5174125B2 (ja) * | 2006-01-30 | 2013-04-03 | 京セラ株式会社 | 発光装置および照明装置 |
US8476735B2 (en) * | 2007-05-29 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Programmable semiconductor interposer for electronic package and method of forming |
US20110278638A1 (en) * | 2008-03-25 | 2011-11-17 | Lin Charles W C | Semiconductor chip assembly with post/dielectric/post heat spreader |
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JP2010027768A (ja) * | 2008-07-17 | 2010-02-04 | Toyoda Gosei Co Ltd | 発光装置及び発光装置の製造方法 |
JP5377985B2 (ja) * | 2009-01-13 | 2013-12-25 | 株式会社東芝 | 半導体発光素子 |
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JP2011003340A (ja) * | 2009-06-17 | 2011-01-06 | Wun Song Hu | Ledやledsmd電球と電灯の有効な放熱構造 |
US8084780B2 (en) * | 2009-08-13 | 2011-12-27 | Semileds Optoelectronics Co. | Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC) |
JP5213884B2 (ja) * | 2010-01-27 | 2013-06-19 | 三菱電機株式会社 | 半導体装置モジュール |
JP2011159813A (ja) * | 2010-02-01 | 2011-08-18 | Panasonic Electric Works Co Ltd | 発光装置 |
CN201904368U (zh) * | 2010-07-30 | 2011-07-20 | 晶科电子(广州)有限公司 | 一种硅基板集成有功能电路的led表面贴装结构 |
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US8552540B2 (en) * | 2011-05-10 | 2013-10-08 | Conexant Systems, Inc. | Wafer level package with thermal pad for higher power dissipation |
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