TW201608678A - 晶片封裝模組與封裝基板 - Google Patents

晶片封裝模組與封裝基板 Download PDF

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TW201608678A
TW201608678A TW103128785A TW103128785A TW201608678A TW 201608678 A TW201608678 A TW 201608678A TW 103128785 A TW103128785 A TW 103128785A TW 103128785 A TW103128785 A TW 103128785A TW 201608678 A TW201608678 A TW 201608678A
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circuit layer
heat
insulating layer
layer
thermally conductive
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顧淑梅
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恆日光電股份有限公司
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Priority to CN201510516498.1A priority patent/CN105390585A/zh
Priority to US14/832,478 priority patent/US20160056128A1/en
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Abstract

本發明揭露一種晶片封裝模組與封裝基板，其封裝基板具有雙面線路結構。一電路層可與晶片電性連接而另一導熱線路層則延伸至下一層擴大導熱面積，因此本發明可有效增加散熱效率，特別是可用於需要解決散熱問題的發光二極體晶片或太陽能晶片。

Description

晶片封裝模組與封裝基板
本發明係有關一種晶片封裝技術，特別是一種需要極需良好散熱的晶片封裝模組與封裝基板。
發光二極體（light-emitting diodes，LED）因具有壽命長、省電、耐用等特點，因此LED照明裝置為綠能環保發展的趨勢。其中，垂直式LED因為具有發光強度的優勢也廣泛的被使用，然而目前垂直式LED的構裝中，晶片下方的導熱層過多導致導熱路徑熱阻提高，晶片在溫度越高下發光效率越差，進而降低晶片的使用壽命與發光效率。此外，此問題同樣會發生在太陽能電池領域，太陽能晶片再受到溫度影響後會導致光發電轉換效率下降，尤其是聚光型太陽能晶片更是要特別考慮解決散熱的問題。
為了解決上述問題，本發明目的之一係提供一種晶片封裝模組與封裝基板，其封裝基板具有雙面線路結構，電路層與晶片電性連接而導熱線路層則延伸至下一層擴大導熱面積，因此可有效增加散熱效率。
本發明一實施例之晶片封裝模組，包括：一金屬基板；一第一導熱絕緣層，係設置於金屬基板上；一導熱線路層，係設置於第一導熱絕緣層上；一第二導熱絕緣層，係設置於導熱線路層上；一電路層，係設置於第二導熱絕緣層上，其中電路層係與導熱線路層電性連接；至少一晶片，係覆晶設置於電路層上；以及一封裝材料，係覆蓋晶片與部分電路層。
本發明另一實施例之封裝基板，包括：一金屬基板；一第一導熱絕緣層，係設置於金屬基板上；一導熱線路層，係設置於第一導熱絕緣層上；一第二導熱絕緣層，係設置於導熱線路層上；以及一電路層，係設置於第二導熱絕緣層上，其中電路層係與導熱線路層電性連接。
以下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
其詳細說明如下，所述較佳實施例僅做一說明非用以限定本發明。
請參照圖1，本發明一實施例晶片封裝模組之示意圖。晶片封裝模組包括一金屬基板10；依第一導熱絕緣層20；一導熱線路層30；一第二導熱絕緣層22；一電路層32；至少一晶片40；以及一封裝材料50。
如圖1所示，第一導熱絕緣層20設置於金屬基板10的上表面。導熱線路層30設置於第一導熱絕緣層20上，藉由第一導熱絕緣層20讓導熱線路層30與金屬基板10電性隔絕。第二導熱絕緣層22設置於導熱線路層30上。電路層32設置於第二導熱絕緣層上22，其中電路層32與導熱線路層30電性連接。至少一晶片40，係覆晶設置於電路層32上與其電性連接。封裝材料50則覆蓋晶片40與部分電路層32。晶片40係利用導電材料42與電路層32電性連接。導電材料42可為焊球或是凸塊。
接續上述說明，於本實施例中，電路層32、第二導熱絕緣層22與導熱線路層30為一三層結構，金屬線路分布於第二導熱絕緣層22的上下表面形成一雙面線路結構。於第二導熱絕緣層22上的電路層32用以與晶片40電性連接，晶片40所產生的熱可透過電路層32延伸至第二導熱絕緣層22下的導熱線路層30並朝下由第一導熱絕緣層20與金屬基板10方向散出。
此外，於一實施例中，導熱線路層30的面積大於電路層32的面積。因此，透過將電路層32的金屬線路延伸至下層的導熱線路層30，可有效加大導熱面積，並增加其透過金屬導熱之速率。
請參照圖1與圖2，於不同實施例中，第二導熱絕緣層22至少具有兩開口(圖上未標示)用以供電路層32與導熱線路層30上下相接並電性連接。於一實施例中，封裝材料50覆蓋部分第二導熱絕緣層22。
如圖3所示，於一實施例中，金屬基板10的下表面可設置一散熱件60進一步幫助晶片封裝模組增加其散熱效率，晶片40所產生之熱量傳遞至金屬基板10後，可藉由設置於金屬基板10另一表面的散熱件60快速地散出。
於本晶片封裝模組中，晶片40可為發光二極體晶片或是太陽能晶片。發光二極體晶片可為垂直式發光二極體晶片，其P-N電極係設置於晶片40的底部，故可用以進行覆晶封裝。另外，太陽能晶片也可以為需要散熱效果良好的高聚光型太陽能晶片，藉由本發明中雙面線路結構快速進行散熱。
如圖1與圖2所示，本發明的封裝基板包括：一金屬基板10；一第一導熱絕緣層20，係設置於金屬基板10上；一導熱線路層30，係設置於第一導熱絕緣層20上；一第二導熱絕緣層22，係設置於導熱線路層30上；以及一電路層32，係設置於第二導熱絕緣層22上，其中電路層32係與導熱線路層30電性連接。第二導熱絕緣層22係具有至少兩開口(圖上未標示)用以供電路層32與導熱線路層30上下電性連接。
於本發明中，請參照圖1與圖2，電路層32、第二導熱絕緣層22與導熱線路層30的設計讓金屬線路分布於第二導熱絕緣層22的上下表面形成一雙面線路結構。如圖4所示，電路層32用以與晶片40電性連接。導熱線路層30的面積大於電路層32的面積。因此，透過將電路層32的金屬線路延伸至下層的導熱線路層30，可有效加大導熱面積，並增加晶片40所產生熱量透過金屬導熱之速率。如圖3所示，金屬基板10下表面可設置一散熱件60。
根據上述說明，本發明藉由封裝基板雙面線路的設計，讓晶片底部所產生的熱由加大導熱面積的線路快速地散出。雙面線路中的電路層與晶片電性連接，而導熱線路層則延伸至下一層擴大導熱面積，因此本發明可有效增加晶片封裝模組散熱效率與維持其使用壽命。
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。
10‧‧‧金屬基板 20‧‧‧第一導熱絕緣層 22‧‧‧第二導熱絕緣層 30‧‧‧導熱線路層 32‧‧‧電路層 40‧‧‧晶片 42‧‧‧導電材料 50‧‧‧封裝材料 60‧‧‧散熱件
圖1為本發明一實施例的示意圖。 圖2為本發明一實施例的示意圖。 圖3為本發明一實施例的示意圖。 圖4為本發明一實施例的示意圖。
10‧‧‧金屬基板
20‧‧‧第一導熱絕緣層
22‧‧‧第二導熱絕緣層
30‧‧‧導熱線路層
32‧‧‧電路層
40‧‧‧晶片
42‧‧‧導電材料
50‧‧‧封裝材料

Claims (10)

  1. 一種晶片封裝模組，包含： 一金屬基板； 一第一導熱絕緣層，係設置於該金屬基板上； 一導熱線路層，係設置於該第一導熱絕緣層上； 一第二導熱絕緣層，係設置於該導熱線路層上； 一電路層，係設置於該第二導熱絕緣層上，其中該電路層係與該導熱線路層電性連接； 至少一晶片，係覆晶設置於該電路層上；以及 一封裝材料，係覆蓋該晶片與部分該電路層。
  2. 如請求項1所述之晶片封裝模組，其中該封裝材料更包含覆蓋部分該第一導熱絕緣層。
  3. 如請求項1所述之晶片封裝模組，更包含一散熱件設置於該金屬基板下。
  4. 如請求項1所述之晶片封裝模組，其中該第二導熱絕緣層係具有至少兩開口用以供該電路層與該導熱線路層上下電性連接。
  5. 如請求項1所述之晶片封裝模組，其中該晶片為發光二極體晶片或太陽能晶片。
  6. 如請求項1所述之晶片封裝模組，其中該導熱線路層之面積係大於該電路層之面積。
  7. 如請求項1所述之晶片封裝模組，更包含一導電材料電性連接該晶片與該電路層。
  8. 一種封裝基板，包含： 一金屬基板； 一第一導熱絕緣層，係設置於該金屬基板上； 一導熱線路層，係設置於該第一導熱絕緣層上； 一第二導熱絕緣層，係設置於該導熱線路層上；以及 一電路層，係設置於該第二導熱絕緣層上，其中該電路層係與該導熱線路層電性連接。
  9. 如請求項8所述之封裝基板，更包含一散熱件設置於該金屬基板下。
  10. 如請求項8所述之封裝基板，其中該第二導熱絕緣層係具有至少兩開口用以供該電路層與該導熱線路層上下電性連接。
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