CN102403309B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN102403309B
CN102403309B CN201110276376.1A CN201110276376A CN102403309B CN 102403309 B CN102403309 B CN 102403309B CN 201110276376 A CN201110276376 A CN 201110276376A CN 102403309 B CN102403309 B CN 102403309B
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CN
China
Prior art keywords
light emitting
substrate
integrated circuit
emitting device
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110276376.1A
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English (en)
Chinese (zh)
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CN102403309A (zh
Inventor
宋镐荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN102403309A publication Critical patent/CN102403309A/zh
Application granted granted Critical
Publication of CN102403309B publication Critical patent/CN102403309B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
CN201110276376.1A 2010-09-10 2011-09-13 发光器件 Active CN102403309B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0089048 2010-09-10
KR1020100089048A KR101711961B1 (ko) 2010-09-10 2010-09-10 발광 디바이스

Publications (2)

Publication Number Publication Date
CN102403309A CN102403309A (zh) 2012-04-04
CN102403309B true CN102403309B (zh) 2015-09-16

Family

ID=44582605

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110276376.1A Active CN102403309B (zh) 2010-09-10 2011-09-13 发光器件

Country Status (5)

Country Link
US (1) US9006973B2 (enExample)
EP (1) EP2428991B1 (enExample)
JP (1) JP5945392B2 (enExample)
KR (1) KR101711961B1 (enExample)
CN (1) CN102403309B (enExample)

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CN102751296B (zh) * 2012-07-24 2015-05-20 矽光光电科技（上海）有限公司 整合集成电路、发光元件及传感元件的单衬底器件
CN105264661B (zh) * 2013-03-25 2018-01-16 香港科技大学 功率片上系统结构
WO2015008243A1 (en) * 2013-07-19 2015-01-22 Koninklijke Philips N.V. Pc led with optical element and without substrate carrier
TWM496091U (zh) * 2014-03-26 2015-02-21 賀喜能源股份有限公司 具矽基座的發光二極體及發光二極體燈具
DE102014105734A1 (de) * 2014-04-23 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP6736260B2 (ja) * 2015-05-13 2020-08-05 ローム株式会社 半導体発光装置
US20170104135A1 (en) * 2015-10-13 2017-04-13 Sensor Electronic Technology, Inc. Light Emitting Diode Mounting Structure
KR102629637B1 (ko) * 2018-04-19 2024-01-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 레이저 구동 장치 및 그 제조 방법
WO2020122037A1 (ja) * 2018-12-11 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
CN113594194B (zh) * 2020-04-30 2024-09-17 华为机器有限公司 一种堆叠结构、显示屏及显示装置
KR102557580B1 (ko) * 2021-01-05 2023-07-20 엘지전자 주식회사 반도체 발광 소자 패키지 및 디스플레이 장치

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CN1828921A (zh) * 2005-01-21 2006-09-06 范朝阳 异质集成高压直流/交流发光器
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
CN101142692A (zh) * 2005-03-11 2008-03-12 首尔半导体株式会社 具有串联耦合的发光单元阵列的发光二极管封装
CN101154656A (zh) * 2006-09-30 2008-04-02 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法

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EP0921577A4 (en) 1997-01-31 2007-10-31 Matsushita Electric Industrial Co Ltd LIGHT-EMITTING COMPONENT; SEMICONDUCTOR LIGHT EMITTING DEVICE, AND ITS MANUFACTURING METHOD
US6777883B2 (en) 2002-04-10 2004-08-17 Koninklijke Philips Electronics N.V. Integrated LED drive electronics on silicon-on-insulator integrated circuits
US20040206970A1 (en) 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
JP2005142294A (ja) 2003-11-05 2005-06-02 Matsushita Electric Ind Co Ltd 半導体レーザユニットおよびそれを用いた光ピックアップ装置
JPWO2005104248A1 (ja) * 2004-04-19 2007-08-30 松下電器産業株式会社 発光素子駆動用半導体チップ、発光装置及び照明装置
KR100927256B1 (ko) 2004-07-09 2009-11-16 엘지전자 주식회사 제너다이오드가 집적된 발광소자 서브마운트 제작방법
JP4601464B2 (ja) * 2005-03-10 2010-12-22 株式会社沖データ 半導体装置、プリントヘッド、及びそれを用いた画像形成装置
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KR101134752B1 (ko) 2006-07-14 2012-04-13 엘지이노텍 주식회사 Ｌｅｄ 패키지
JPWO2008123020A1 (ja) * 2007-03-09 2010-07-15 三洋電機株式会社 半導体装置及びその製造方法
JP2008235792A (ja) * 2007-03-23 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US8436371B2 (en) * 2007-05-24 2013-05-07 Cree, Inc. Microscale optoelectronic device packages
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JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP5102605B2 (ja) 2007-12-25 2012-12-19 パナソニック株式会社 発光装置およびその製造方法
JP5475954B2 (ja) * 2008-01-28 2014-04-16 パナソニック株式会社 発光装置
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
CN1828921A (zh) * 2005-01-21 2006-09-06 范朝阳 异质集成高压直流/交流发光器
CN101142692A (zh) * 2005-03-11 2008-03-12 首尔半导体株式会社 具有串联耦合的发光单元阵列的发光二极管封装
CN101154656A (zh) * 2006-09-30 2008-04-02 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法

Also Published As

Publication number Publication date
US20120062115A1 (en) 2012-03-15
KR101711961B1 (ko) 2017-03-03
JP2012060133A (ja) 2012-03-22
JP5945392B2 (ja) 2016-07-05
KR20120026873A (ko) 2012-03-20
CN102403309A (zh) 2012-04-04
EP2428991B1 (en) 2019-02-20
EP2428991A3 (en) 2014-06-11
EP2428991A2 (en) 2012-03-14
US9006973B2 (en) 2015-04-14

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Owner name: SAMSUNG ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: SAMSUNG LED CO., LTD.

Effective date: 20121128

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20121128

Address after: Gyeonggi Do Korea Suwon

Applicant after: Samsung Electronics Co., Ltd.

Address before: Gyeonggi Do Korea Suwon

Applicant before: Samsung LED Co., Ltd.

C14 Grant of patent or utility model
GR01 Patent grant