JP5916191B2 - 電子デバイスを製造する方法およびタングステンを充填する方法 - Google Patents

電子デバイスを製造する方法およびタングステンを充填する方法 Download PDF

Info

Publication number
JP5916191B2
JP5916191B2 JP2009278990A JP2009278990A JP5916191B2 JP 5916191 B2 JP5916191 B2 JP 5916191B2 JP 2009278990 A JP2009278990 A JP 2009278990A JP 2009278990 A JP2009278990 A JP 2009278990A JP 5916191 B2 JP5916191 B2 JP 5916191B2
Authority
JP
Japan
Prior art keywords
tungsten
layer
concave feature
depositing
tungsten layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009278990A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010153852A5 (OSRAM
JP2010153852A (ja
Inventor
チャンドラセカール、アナンド
フマーユーン、ラッシナ
ダネク、マイケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Novellus Systems Inc
Original Assignee
Novellus Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/332,017 external-priority patent/US8129270B1/en
Application filed by Novellus Systems Inc filed Critical Novellus Systems Inc
Publication of JP2010153852A publication Critical patent/JP2010153852A/ja
Publication of JP2010153852A5 publication Critical patent/JP2010153852A5/ja
Application granted granted Critical
Publication of JP5916191B2 publication Critical patent/JP5916191B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP2009278990A 2008-12-10 2009-12-08 電子デバイスを製造する方法およびタングステンを充填する方法 Active JP5916191B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/332,017 2008-12-10
US12/332,017 US8129270B1 (en) 2008-12-10 2008-12-10 Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US12/535,377 US20100144140A1 (en) 2008-12-10 2009-08-04 Methods for depositing tungsten films having low resistivity for gapfill applications
US12/535,377 2009-08-04

Publications (3)

Publication Number Publication Date
JP2010153852A JP2010153852A (ja) 2010-07-08
JP2010153852A5 JP2010153852A5 (OSRAM) 2013-01-31
JP5916191B2 true JP5916191B2 (ja) 2016-05-11

Family

ID=42231559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009278990A Active JP5916191B2 (ja) 2008-12-10 2009-12-08 電子デバイスを製造する方法およびタングステンを充填する方法

Country Status (4)

Country Link
US (1) US20100144140A1 (OSRAM)
JP (1) JP5916191B2 (OSRAM)
KR (2) KR101201074B1 (OSRAM)
TW (1) TWI602941B (OSRAM)

Families Citing this family (197)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129270B1 (en) 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US8153520B1 (en) 2009-08-03 2012-04-10 Novellus Systems, Inc. Thinning tungsten layer after through silicon via filling
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8119527B1 (en) 2009-08-04 2012-02-21 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9548228B2 (en) 2009-08-04 2017-01-17 Lam Research Corporation Void free tungsten fill in different sized features
US8124531B2 (en) * 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
KR101340793B1 (ko) * 2010-07-09 2013-12-11 노벨러스 시스템즈, 인코포레이티드 고 종횡비 특징부 내부로 텅스텐 증착하기
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8883637B2 (en) * 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
KR101847628B1 (ko) * 2011-09-28 2018-05-25 삼성전자주식회사 금속함유 도전 라인을 포함하는 반도체 소자 및 그 제조 방법
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
KR102131581B1 (ko) * 2012-03-27 2020-07-08 노벨러스 시스템즈, 인코포레이티드 텅스텐 피처 충진
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140273451A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
JP6494940B2 (ja) * 2013-07-25 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 異なるサイズのフィーチャへのボイドフリータングステン充填
WO2015023404A1 (en) * 2013-08-16 2015-02-19 Applied Materials, Inc. Tungsten deposition with tungsten hexafluoride (wf6) etchback
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9230863B2 (en) * 2014-02-11 2016-01-05 GlobalFoundries, Inc. Method for producing integrated circuit with smaller grains of tungsten
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
JP6297884B2 (ja) 2014-03-28 2018-03-20 東京エレクトロン株式会社 タングステン膜の成膜方法
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9899234B2 (en) 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US20170309490A1 (en) * 2014-09-24 2017-10-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US20160300731A1 (en) * 2015-04-10 2016-10-13 Applied Materials, Inc. Methods of etchback profile tuning
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9978610B2 (en) * 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
KR102447489B1 (ko) 2015-09-02 2022-09-27 삼성전자주식회사 반도체 메모리 소자
US9853123B2 (en) 2015-10-28 2017-12-26 United Microelectronics Corp. Semiconductor structure and fabrication method thereof
CN106653678A (zh) * 2015-11-03 2017-05-10 中芯国际集成电路制造(上海)有限公司 导电插塞结构及其形成方法
CN107026113B (zh) * 2016-02-02 2020-03-31 中芯国际集成电路制造(上海)有限公司 半导体装置的制造方法和系统
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10566211B2 (en) 2016-08-30 2020-02-18 Lam Research Corporation Continuous and pulsed RF plasma for etching metals
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
CN110088875B (zh) * 2016-12-15 2023-09-01 应用材料公司 无成核的间隙填充ald工艺
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
CN108695235B (zh) * 2017-04-05 2019-08-13 联华电子股份有限公司 改善钨金属层蚀刻微负载的方法
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
KR102808924B1 (ko) 2017-08-14 2025-05-15 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
DE102017216937A1 (de) * 2017-09-25 2019-03-28 Robert Bosch Gmbh Verfahren zum Herstellen zumindest einer Durchkontaktierung in einem Wafer
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
CN111052312B (zh) * 2018-03-26 2025-04-15 株式会社国际电气 半导体器件的制造方法、衬底处理装置及程序
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP2021523292A (ja) 2018-05-03 2021-09-02 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
CN113166929A (zh) 2018-12-05 2021-07-23 朗姆研究公司 无空隙低应力填充
JP7649741B2 (ja) 2018-12-14 2025-03-21 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN113424308B (zh) 2019-02-13 2024-11-19 朗姆研究公司 带有抑制控制的钨特征填充
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
KR20220047333A (ko) 2019-08-12 2022-04-15 램 리써치 코포레이션 텅스텐 증착
KR102821437B1 (ko) * 2020-03-02 2025-06-19 주식회사 원익아이피에스 기판 처리 방법 및 이를 이용하여 제조된 반도체 소자
US11515200B2 (en) * 2020-12-03 2022-11-29 Applied Materials, Inc. Selective tungsten deposition within trench structures

Family Cites Families (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1670912C3 (de) * 1967-08-18 1981-06-11 Bayer Ag, 5090 Leverkusen Herbizide Mittel auf Basis von 1,2,4-Triazin-5-onen
DE2346722C2 (de) * 1973-09-17 1974-12-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Magnetooptischer Meßwandler für Hochspannungsströme
US4494978A (en) * 1976-12-30 1985-01-22 Chevron Research Company Herbicidal N-(N'-hydrocarbyloxycarbamylalkyl)-2,6-dialkyl-alpha-haloacetanilides
AR240698A1 (es) * 1985-01-19 1990-09-28 Takeda Chemical Industries Ltd Procedimiento para preparar compuestos de 5-(4-(2-(5-etil-2-piridil)-etoxi)benzil)-2,4-tiazolidindiona y sus sales
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
DE10199003I1 (de) * 1987-09-04 2003-06-12 Beecham Group Plc Substituierte Thiazolidinionderivate
US4935493A (en) * 1987-10-06 1990-06-19 E. I. Du Pont De Nemours And Company Protease inhibitors
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
US5433955A (en) * 1989-01-23 1995-07-18 Akzo N.V. Site specific in vivo activation of therapeutic drugs
US5366862A (en) * 1990-02-14 1994-11-22 Receptor Laboratories, Inc. Method for generating and screening useful peptides
US5462928A (en) * 1990-04-14 1995-10-31 New England Medical Center Hospitals, Inc. Inhibitors of dipeptidyl-aminopeptidase type IV
JP3019367B2 (ja) * 1990-06-21 2000-03-13 日本電気株式会社 半導体装置の製造方法
US5164330A (en) * 1991-04-17 1992-11-17 Intel Corporation Etchback process for tungsten utilizing a NF3/AR chemistry
US5387512A (en) * 1991-06-07 1995-02-07 Merck & Co. Inc. Preparation of 3-[z-benzoxazol-2-yl)ethyl]-5-(1-hydroxyethyl)-6-methyl-2-(1H)-pyridinone by biotransformation
IL106998A0 (en) * 1992-09-17 1993-12-28 Univ Florida Brain-enhanced delivery of neuroactive peptides by sequential metabolism
US5811281A (en) * 1993-07-12 1998-09-22 Cornell Research Foundation, Inc. Immortalized intestinal epithelial cell lines
IL111785A0 (en) * 1993-12-03 1995-01-24 Ferring Bv Dp-iv inhibitors and pharmaceutical compositions containing them
JP3291889B2 (ja) * 1994-02-15 2002-06-17 ソニー株式会社 ドライエッチング方法
AU2790895A (en) * 1994-06-10 1996-01-05 Universitaire Instelling Antwerpen Purification of serine protease and synthetic inhibitors thereof
JP2737764B2 (ja) * 1995-03-03 1998-04-08 日本電気株式会社 半導体装置及びその製造方法
US5614379A (en) * 1995-04-26 1997-03-25 Eli Lilly And Company Process for preparing anti-obesity protein
JP3538970B2 (ja) * 1995-05-24 2004-06-14 ヤマハ株式会社 配線形成法
US6325989B1 (en) * 1995-06-01 2001-12-04 Dana-Farber Cancer Institute, Inc. Form of dipeptidylpeptidase IV (CD26) found in human serum
US6262059B1 (en) * 1995-06-07 2001-07-17 Cell Pathways, Inc. Method of treating a patient having precancerous lesions with quinazoline derivatives
JPH0928376A (ja) * 1995-07-21 1997-02-04 Ajinomoto Co Inc 新規ジペプチジルペプチダーゼｉｖとその製造方法
US5985532A (en) * 1995-12-11 1999-11-16 Eastman Kodak Company Photographic element containing an improved pyrozolotriazole coupler
US5747379A (en) * 1996-01-11 1998-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating seamless tungsten plug employing tungsten redeposition and etch back
US20020006899A1 (en) * 1998-10-06 2002-01-17 Pospisilik Andrew J. Use of dipeptidyl peptidase IV effectors for lowering blood pressure in mammals
JPH09326436A (ja) * 1996-06-06 1997-12-16 Sony Corp 配線形成方法
US5885997A (en) * 1996-07-01 1999-03-23 Dr. Reddy's Research Foundation Heterocyclic compounds, process for their preparation and pharmaceutical compositions containing them and their use in the treatment of diabetes and related diseases
KR100579765B1 (ko) * 1996-07-01 2006-12-28 닥터 레디스 레보러터리즈 리미티드 신규헤테로고리형화합물의제조방법,이를함유하는약제조성물및당뇨병및이와관련된질병의치료에있어서그의용도
US6006753A (en) * 1996-08-30 1999-12-28 Eli Lilly And Company Use of GLP-1 or analogs to abolish catabolic changes after surgery
US6011155A (en) * 1996-11-07 2000-01-04 Novartis Ag N-(substituted glycyl)-2-cyanopyrrolidines, pharmaceutical compositions containing them and their use in inhibiting dipeptidyl peptidase-IV
US5814480A (en) * 1997-01-17 1998-09-29 Incyte Pharmacueticals, Inc. DNA encoding human metallothioein
US5866483A (en) * 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
EP0897012A1 (en) * 1997-07-05 1999-02-17 Societe Des Produits Nestle S.A. Cloning of the prolyl-dipeptidyl-peptidase from aspergillus oryzae
US5807786A (en) * 1997-07-30 1998-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence
US6235493B1 (en) * 1997-08-06 2001-05-22 The Regents Of The University Of California Amino acid substituted-cresyl violet, synthetic fluorogenic substrates for the analysis of agents in individual in vivo cells or tissue
BR9813233A (pt) * 1997-09-29 2000-08-22 Point Therapeutics Inc Estimulação de células hematopoéticas in vitro
US6342611B1 (en) * 1997-10-10 2002-01-29 Cytovia, Inc. Fluorogenic or fluorescent reporter molecules and their applications for whole-cell fluorescence screening assays for capsases and other enzymes and the use thereof
JP4095772B2 (ja) * 1997-11-18 2008-06-04 財団法人微生物化学研究会 新規生理活性物質スルフォスチン、その製造法及びその用途
EP1042457B1 (en) * 1997-12-16 2006-03-08 Novozymes A/S Polypeptides having aminopeptidase activity and nucleic acids encoding same
US6235551B1 (en) * 1997-12-31 2001-05-22 Micron Technology, Inc. Semiconductor device including edge bond pads and methods
TW359884B (en) * 1998-01-07 1999-06-01 Nanya Technology Co Ltd Multi-level interconnects with I-plug and production process therefor
JP2002517401A (ja) * 1998-06-05 2002-06-18 ポイント セラピューティクス， インコーポレイテッド 環状ボロプロリン化合物
DE19828113A1 (de) * 1998-06-24 2000-01-05 Probiodrug Ges Fuer Arzneim Prodrugs von Inhibitoren der Dipeptidyl Peptidase IV
US6129911A (en) * 1998-07-10 2000-10-10 Rhode Island Hospital, A Lifespan Partner Liver stem cell
TW436366B (en) * 1998-08-21 2001-05-28 United Microelectronics Corp Method of fabricating a plug
US6245654B1 (en) * 1999-03-31 2001-06-12 Taiwan Semiconductor Manufacturing Company, Ltd Method for preventing tungsten contact/via plug loss after a backside pressure fault
US6110949A (en) * 1999-06-24 2000-08-29 Novartis Ag N-(substituted glycyl)-4-cyanothiazolidines, pharmaceutical compositions containing them and their use in inhibiting dipeptidyl peptidase-IV
US6172081B1 (en) * 1999-06-24 2001-01-09 Novartis Ag Tetrahydroisoquinoline 3-carboxamide derivatives
US6107317A (en) * 1999-06-24 2000-08-22 Novartis Ag N-(substituted glycyl)-thiazolidines, pharmaceutical compositions containing them and their use in inhibiting dipeptidyl peptidase-IV
US6251391B1 (en) * 1999-10-01 2001-06-26 Klaire Laboratories, Inc. Compositions containing dipepitidyl peptidase IV and tyrosinase or phenylalaninase for reducing opioid-related symptons
US6261794B1 (en) * 1999-10-14 2001-07-17 Saint Louis University Methods for identifying inhibitors of methionine aminopeptidases
US6376375B1 (en) * 2000-01-13 2002-04-23 Delphi Technologies, Inc. Process for preventing the formation of a copper precipitate in a copper-containing metallization on a die
US6395767B2 (en) * 2000-03-10 2002-05-28 Bristol-Myers Squibb Company Cyclopropyl-fused pyrrolidine-based inhibitors of dipeptidyl peptidase IV and method
JP2002009017A (ja) * 2000-06-22 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002042960A (ja) * 2000-07-25 2002-02-08 Yazaki Corp コネクタ支持機構
US20020037829A1 (en) * 2000-08-23 2002-03-28 Aronson Peter S. Use of DPPIV inhibitors as diuretic and anti-hypertensive agents
US6337069B1 (en) * 2001-02-28 2002-01-08 B.M.R.A. Corporation B.V. Method of treating rhinitis or sinusitis by intranasally administering a peptidase
US7005372B2 (en) * 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US7955972B2 (en) * 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7141494B2 (en) * 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
JP2002353161A (ja) * 2001-05-25 2002-12-06 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP3822804B2 (ja) * 2001-06-18 2006-09-20 株式会社日立製作所 半導体装置の製造方法
EP1285922A1 (en) * 2001-08-13 2003-02-26 Warner-Lambert Company 1-Alkyl or 1-cycloalkyltriazolo[4,3-a]quinazolin-5-ones as phosphodiesterase inhibitors
JP2003142484A (ja) * 2001-10-31 2003-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
US6872323B1 (en) * 2001-11-01 2005-03-29 Novellus Systems, Inc. In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor
SE0201976D0 (sv) * 2002-06-24 2002-06-24 Astrazeneca Ab Novel compounds
US6998502B1 (en) * 2002-09-05 2006-02-14 Sabinsa Corporation Convenient process of manufacture for difluoromethylornithine and related compounds
US6802944B2 (en) * 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
KR100542740B1 (ko) * 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
ZA200508439B (en) * 2003-05-05 2007-03-28 Probiodrug Ag Medical use of inhibitors of glutaminyl and glutamate cyclases
US7205240B2 (en) * 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
WO2005016911A1 (en) * 2003-08-13 2005-02-24 Takeda Pharmaceutical Company Limited 4-pyrimidone derivatives and their use as peptidyl peptidase inhibitors
US7223693B2 (en) * 2003-12-12 2007-05-29 Samsung Electronics Co., Ltd. Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same
EP1713780B1 (en) * 2004-02-05 2012-01-18 Probiodrug AG Novel inhibitors of glutaminyl cyclase
US7199045B2 (en) * 2004-05-26 2007-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-filled openings for submicron devices and methods of manufacture thereof
KR20050013187A (ko) * 2004-12-28 2005-02-03 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
JP4671729B2 (ja) * 2005-03-28 2011-04-20 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US20070006893A1 (en) * 2005-07-08 2007-01-11 Bing Ji Free radical initiator in remote plasma chamber clean
JP4783169B2 (ja) * 2006-02-13 2011-09-28 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
KR101254275B1 (ko) * 2006-06-20 2013-04-23 가부시키가이샤 아루박 폴리이미드막 도포 장치 및 방법
US8262800B1 (en) * 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
US20100072623A1 (en) * 2008-09-19 2010-03-25 Advanced Micro Devices, Inc. Semiconductor device with improved contact plugs, and related fabrication methods
US8129270B1 (en) * 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US8153520B1 (en) * 2009-08-03 2012-04-10 Novellus Systems, Inc. Thinning tungsten layer after through silicon via filling
US9034768B2 (en) * 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8119527B1 (en) * 2009-08-04 2012-02-21 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8124531B2 (en) * 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8883637B2 (en) * 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials

Also Published As

Publication number Publication date
KR101340674B1 (ko) 2013-12-12
TWI602941B (zh) 2017-10-21
KR101201074B1 (ko) 2012-11-20
KR20100067065A (ko) 2010-06-18
US20100144140A1 (en) 2010-06-10
JP2010153852A (ja) 2010-07-08
KR20120120918A (ko) 2012-11-02
TW201028494A (en) 2010-08-01

Similar Documents

Publication Publication Date Title
JP5916191B2 (ja) 電子デバイスを製造する方法およびタングステンを充填する方法
KR102609125B1 (ko) 리모트 플라즈마 프로세스를 위한 챔버 컨디셔닝
JP7407125B2 (ja) エッジエクスクルージョン制御
TWI529806B (zh) 形成鎢接觸點及小臨界尺寸互連線之方法
JP6494940B2 (ja) 異なるサイズのフィーチャへのボイドフリータングステン充填
US8501620B2 (en) Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
TWI495756B (zh) 將鎢沈積入高深寬比的特徵中
US9754824B2 (en) Tungsten films having low fluorine content
JP6273257B2 (ja) タングステンによるフィーチャ充填
CN104752339B (zh) 实现低电阻率钨特征填充的钨成核工艺
TWI665760B (zh) 用於消去式金屬積體化的襯墊及阻障層應用
KR101457829B1 (ko) 회로 컴포넌트들을 정의하기 위한 서브트랙티브 패터닝
KR101340793B1 (ko) 고 종횡비 특징부 내부로 텅스텐 증착하기
TW201719756A (zh) 蝕刻製程中施加脈衝予射頻功率以提升鎢間隙填充功能
TW202039906A (zh) 蝕刻腔室中的方向性沉積
JP2016208027A (ja) コバルトのエッチバック

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121207

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121207

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140311

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140313

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140611

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140616

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140710

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140715

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140811

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140814

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150317

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150717

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160308

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160404

R150 Certificate of patent or registration of utility model

Ref document number: 5916191

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250