JP5912709B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5912709B2 JP5912709B2 JP2012062923A JP2012062923A JP5912709B2 JP 5912709 B2 JP5912709 B2 JP 5912709B2 JP 2012062923 A JP2012062923 A JP 2012062923A JP 2012062923 A JP2012062923 A JP 2012062923A JP 5912709 B2 JP5912709 B2 JP 5912709B2
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- insulating film
- film
- oxide semiconductor
- gate insulating
- transistor
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- 239000004065 semiconductor Substances 0.000 title claims description 233
- 239000001257 hydrogen Substances 0.000 claims description 94
- 229910052739 hydrogen Inorganic materials 0.000 claims description 94
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 86
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 41
- 239000001301 oxygen Substances 0.000 claims description 41
- 229910052760 oxygen Inorganic materials 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 150000002431 hydrogen Chemical class 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
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- 239000011701 zinc Substances 0.000 description 7
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- 239000000969 carrier Substances 0.000 description 6
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- 125000004429 atom Chemical group 0.000 description 5
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- 238000000231 atomic layer deposition Methods 0.000 description 4
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- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- 238000003795 desorption Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910018657 Mn—Al Inorganic materials 0.000 description 1
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- 229910052743 krypton Inorganic materials 0.000 description 1
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- 238000003475 lamination Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Liquid Crystal (AREA)
Description
本実施の形態では、本発明の一態様のトランジスタの一例について図1を用いて説明する。
本実施の形態では、実施の形態1に示したトランジスタを用いて作製した液晶表示装置について説明する。なお、本実施の形態では液晶表示装置に本発明の一形態を適用した例について説明するが、これに限定されるものではない。例えば、発光装置の一つであるEL(Electro Luminescence)表示装置に本発明の一形態を適用することも、当業者であれば容易に想到し得るものである。
本実施の形態では、実施の形態1で示したトランジスタを用いて、半導体記憶装置を作製する例について説明する。
実施の形態1で示したトランジスタを少なくとも一部に用いてCPU(Central Processing Unit)を構成することができる。
本実施の形態では、実施の形態1乃至実施の形態4を適用した電子機器の例について説明する。
104 ゲート電極
106 酸化物半導体膜
112 ゲート絶縁膜
112a 第1のゲート絶縁膜
112b 第2のゲート絶縁膜
116 一対の電極
118 層間絶縁膜
136 酸化物半導体膜
206 酸化物半導体膜
216 一対の電極
218 層間絶縁膜
236 酸化物半導体膜
302 下地絶縁膜
304 ゲート電極
306 酸化物半導体膜
312 ゲート絶縁膜
312a 第1のゲート絶縁膜
312b 第2のゲート絶縁膜
316 一対の電極
404 ゲート電極
406 酸化物半導体膜
412 ゲート絶縁膜
412a 第1のゲート絶縁膜
412b 第2のゲート絶縁膜
416 一対の電極
504 ゲート電極
505 チャネル領域
506 酸化物半導体膜
507a ソース領域
507b ドレイン領域
512 ゲート絶縁膜
512a 第1のゲート絶縁膜
512b 第2のゲート絶縁膜
516 一対の電極
518 層間絶縁膜
604 ゲート電極
605 チャネル領域
606 酸化物半導体膜
607a ソース領域
607b ドレイン領域
612 ゲート絶縁膜
612a 第1のゲート絶縁膜
612b 第2のゲート絶縁膜
616 一対の電極
618 層間絶縁膜
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
2200 画素
2210 液晶素子
2220 キャパシタ
2230 トランジスタ
6001 範囲
6002 範囲
6003 範囲
6004 範囲
6010 細線
6020 太線
6030 細線
6040 太線
9300 筐体
9301 ボタン
9302 マイクロフォン
9303 表示部
9304 スピーカ
9305 カメラ
9310 筐体
9311 表示部
9320 筐体
9321 ボタン
9322 マイクロフォン
9323 表示部
Claims (3)
- ゲート電極と、
ゲート絶縁膜と、
酸化物半導体膜と、
ソース電極と、
ドレイン電極と、を有し、
前記酸化物半導体膜は、前記ゲート絶縁膜を介して、前記ゲート電極と重なる領域を有し、
前記ソース電極は、前記酸化物半導体膜と電気的に接続され、
前記ドレイン電極は、前記酸化物半導体膜と電気的に接続され、
前記ゲート絶縁膜は、第1の絶縁膜と、第2の絶縁膜との積層構造を有し、
前記第1の絶縁膜は、前記ゲート電極と接する領域を有し、
前記第2の絶縁膜は、前記酸化物半導体膜と接する領域を有し、
前記第1の絶縁膜は、水素を捕縛する機能を有し、
前記第2の絶縁膜は、水素を透過する機能を有し、
前記第1の絶縁膜は、窒素と、インジウムと、酸素とを有し、
前記第2の絶縁膜は、酸素と、シリコンとを有することを特徴とする半導体装置。 - ゲート電極と、
ゲート絶縁膜と、
酸化物半導体膜と、
ソース電極と、
ドレイン電極と、を有し、
前記酸化物半導体膜は、前記ゲート絶縁膜を介して、前記ゲート電極と重なる領域を有し、
前記ソース電極は、前記酸化物半導体膜と電気的に接続され、
前記ドレイン電極は、前記酸化物半導体膜と電気的に接続され、
前記ゲート絶縁膜は、第1の絶縁膜と、第2の絶縁膜との積層構造を有し、
前記第1の絶縁膜は、前記ゲート電極と接する領域を有し、
前記第2の絶縁膜は、前記酸化物半導体膜と接する領域を有し、
前記第1の絶縁膜は、水素を捕縛する機能を有し、
前記第2の絶縁膜は、水素を透過する機能を有し、
前記第1の絶縁膜は、窒素と、インジウムと、酸素とを有し、
前記第2の絶縁膜は、酸素と、シリコンとを有し、
前記第1の絶縁膜は、7atomic%以上20atomic%以下の窒素濃度を有することを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第1の絶縁膜は、水素と結合すると導電性を有することを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012062923A JP5912709B2 (ja) | 2011-03-25 | 2012-03-20 | 半導体装置 |
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JP2011067206 | 2011-03-25 | ||
JP2011067206 | 2011-03-25 | ||
JP2012062923A JP5912709B2 (ja) | 2011-03-25 | 2012-03-20 | 半導体装置 |
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JP2016053949A Division JP6110975B2 (ja) | 2011-03-25 | 2016-03-17 | 積層構造体、及びその作製方法 |
Publications (3)
Publication Number | Publication Date |
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JP2012216792A JP2012216792A (ja) | 2012-11-08 |
JP2012216792A5 JP2012216792A5 (ja) | 2015-02-05 |
JP5912709B2 true JP5912709B2 (ja) | 2016-04-27 |
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