JP5986392B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5986392B2 JP5986392B2 JP2012034637A JP2012034637A JP5986392B2 JP 5986392 B2 JP5986392 B2 JP 5986392B2 JP 2012034637 A JP2012034637 A JP 2012034637A JP 2012034637 A JP2012034637 A JP 2012034637A JP 5986392 B2 JP5986392 B2 JP 5986392B2
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- gate electrode
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- insulating film
- semiconductor film
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- 239000004065 semiconductor Substances 0.000 title claims description 217
- 239000000758 substrate Substances 0.000 claims description 84
- 239000003990 capacitor Substances 0.000 claims description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 42
- 239000001301 oxygen Substances 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000002829 reductive effect Effects 0.000 description 60
- 239000000463 material Substances 0.000 description 35
- 230000001681 protective effect Effects 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
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- 239000013078 crystal Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 230000006866 deterioration Effects 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 229910007541 Zn O Inorganic materials 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000004458 analytical method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 125000004430 oxygen atom Chemical group O* 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 238000009832 plasma treatment Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
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- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical group 0.000 description 4
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000001678 elastic recoil detection analysis Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- 241001591005 Siga Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum nitride Inorganic compounds Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H10B12/05—Making the transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
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Description
本実施の形態では、本発明の一態様であるトランジスタの一例について図1を用いて説明する。
本実施の形態では、実施の形態1に示したトランジスタとは異なる構造のトランジスタについて図2を用いて説明する。
本実施の形態では、実施の形態1および実施の形態2に示したトランジスタとは異なる構造のトランジスタについて図3を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態3に示したトランジスタとは異なる構造のトランジスタについて図4を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態4に示したトランジスタとは異なる構造のトランジスタについて図5を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態5に示したトランジスタとは異なる構造のトランジスタについて図6を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態6に示したトランジスタに適用可能なゲート電極または構造物の断面形状について、図7を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態7のいずれかに示したトランジスタを用いて、半導体記憶装置を作製する例について説明する。
実施の形態1乃至実施の形態8の少なくともいずれかを一部に適用して、CPU(Central Processing Unit)を構成することができる。
本実施の形態では、実施の形態1乃至実施の形態7のいずれかに示したトランジスタを用いて作製した液晶表示装置について説明する。なお、本実施の形態では液晶表示装置に本発明の一形態を適用した例について説明するが、これに限定されるものではない。例えば、EL(Electro Luminescence)表示装置に本発明の一形態を適用することも、当業者であれば容易に想到しうるものである。
本実施の形態では、実施の形態1乃至実施の形態10のいずれかを適用した電子機器の例について説明する。
104 第1のゲート電極
105 第2のゲート電極
106 半導体膜
112 ゲート絶縁膜
116 一対の電極
118 保護絶縁膜
200 基板
204 第1のゲート電極
205 第2のゲート電極
206 半導体膜
212 ゲート絶縁膜
216 一対の電極
218 保護絶縁膜
300 基板
305 ゲート電極
306 半導体膜
312 ゲート絶縁膜
316 一対の電極
318 保護絶縁膜
400 基板
405 ゲート電極
406 半導体膜
412 ゲート絶縁膜
416 一対の電極
418 保護絶縁膜
500 基板
502 構造物
505 ゲート電極
506 半導体膜
512 ゲート絶縁膜
516 一対の電極
600 基板
602 構造物
605 ゲート電極
606 半導体膜
612 ゲート絶縁膜
616 一対の電極
700 基板
702a 構造物
702b 構造物
702c 構造物
704 第1のゲート電極
705a 第2のゲート電極
705b 第2のゲート電極
705c 第2のゲート電極
705d ゲート電極
705e ゲート電極
705f ゲート電極
801 トランジスタ
802 キャパシタ
811 トランジスタ
812 キャパシタ
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
2000 画素
2010 液晶素子
2020 キャパシタ
2030 トランジスタ
9300 筐体
9301 ボタン
9302 マイクロフォン
9303 表示部
9304 スピーカ
9305 カメラ
9310 筐体
9311 表示部
9320 筐体
9321 ボタン
9322 マイクロフォン
9323 表示部
Claims (5)
- 基板上にトランジスタと、キャパシタとを有し、
前記トランジスタは、
前記基板上の第1のゲート電極と、
前記第1のゲート電極上に接し、かつ前記第1のゲート電極の上面形状よりも小さい上面形状を有する第2のゲート電極と、
前記第1のゲート電極及び前記第2のゲート電極を覆うゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、かつ前記第2のゲート電極と重畳する領域を有する半導体膜と、
前記半導体膜と接する領域を有し、かつ前記第2のゲート電極と重畳する領域を有さない一対の電極とを有し、
前記キャパシタは、第1の電極と、誘電体層と、第2の電極とを有し、
前記第1の電極は、前記第1のゲート電極と同層に設けられた第1の導電膜と、前記第2のゲート電極と同層に設けられた第2の導電膜とを有し、
前記誘電体層は、前記ゲート絶縁膜と同層に設けられ、
前記第2の電極は、前記一対の電極の一方と電気的に接続し、
前記第2のゲート電極は、前記トランジスタのチャネル長を、前記一対の電極間の距離の3倍以上とする膜厚を有することを特徴とする半導体装置。 - 請求項1において、
前記第2の導電膜は、前記第1の導電膜の上面形状よりも小さい上面形状を有することを特徴とする半導体装置。 - 基板上に、絶縁表面を有する第1の構造物と、絶縁表面を有する第2の構造物と、トランジスタと、キャパシタとを有し、
前記トランジスタは、
前記第1の構造物と重畳する領域を有する半導体膜と、
前記半導体膜と接する領域を有し、かつ前記第1の構造物と重畳する領域を有さない一対の電極と、
前記半導体膜を覆うゲート絶縁膜と、
前記ゲート絶縁膜を介して前記半導体膜と重畳する領域を有するゲート電極とを有し、
前記キャパシタは、
前記第2の構造物と重畳する領域を有し、前記一対の電極の一方と電気的に接続する第1の電極と、
前記第1の電極上の誘電体層と、
前記誘電体層を介して前記第1の電極と重畳する領域を有する第2の電極とを有し、
前記第2の構造物は、前記第1の構造物と同層に設けられ、
前記誘電体層は、前記ゲート絶縁膜と同層に設けられ、
前記第2の電極は、前記ゲート電極と同層に設けられ、
前記第1の構造物は、前記トランジスタのチャネル長を、前記一対の電極間の距離の3倍以上とする膜厚を有することを特徴とする半導体装置。 - 請求項3において、
前記半導体膜は、酸化物半導体を有し、
前記第1の構造物は、酸素が過剰な酸化シリコンを有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一において、
前記半導体膜は、酸化物半導体を有することを特徴とする半導体装置。
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US8709920B2 (en) | 2014-04-29 |
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