JP5846185B2 - 貫通電極基板及び貫通電極基板を用いた半導体装置 - Google Patents

貫通電極基板及び貫通電極基板を用いた半導体装置 Download PDF

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Publication number
JP5846185B2
JP5846185B2 JP2013241392A JP2013241392A JP5846185B2 JP 5846185 B2 JP5846185 B2 JP 5846185B2 JP 2013241392 A JP2013241392 A JP 2013241392A JP 2013241392 A JP2013241392 A JP 2013241392A JP 5846185 B2 JP5846185 B2 JP 5846185B2
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Japan
Prior art keywords
opening
hole
electrode substrate
filler
substrate
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JP2013241392A
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Japanese (ja)
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JP2015103586A (ja
JP2015103586A5 (enExample
Inventor
倉持　悟
悟 倉持
小岩　進雄
進雄 小岩
英範 吉岡
英範 吉岡
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to JP2013241392A priority Critical patent/JP5846185B2/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to CN201811131924.XA priority patent/CN109616458B/zh
Priority to PCT/JP2014/080649 priority patent/WO2015076301A1/ja
Priority to CN201811135601.8A priority patent/CN109616459A/zh
Priority to EP20163801.2A priority patent/EP3690933B1/en
Priority to EP14864041.0A priority patent/EP3073523B1/en
Priority to EP22185677.6A priority patent/EP4095895A3/en
Priority to CN201480061865.7A priority patent/CN105765712B/zh
Publication of JP2015103586A publication Critical patent/JP2015103586A/ja
Publication of JP2015103586A5 publication Critical patent/JP2015103586A5/ja
Application granted granted Critical
Publication of JP5846185B2 publication Critical patent/JP5846185B2/ja
Priority to US15/159,323 priority patent/US10256176B2/en
Priority to US16/266,203 priority patent/US10580727B2/en
Priority to US16/743,145 priority patent/US10790221B2/en
Priority to US16/936,519 priority patent/US11362028B2/en
Priority to US17/725,627 priority patent/US12080637B2/en
Priority to US18/800,278 priority patent/US20240404934A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
    • H05K3/445—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits having insulated holes or insulated via connections through the metal core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09145—Edge details
    • H05K2201/09154—Bevelled, chamferred or tapered edge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09563—Metal filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09581—Applying an insulating coating on the walls of holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09854—Hole or via having special cross-section, e.g. elliptical
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0562—Details of resist
    • H05K2203/0594—Insulating resist or coating with special shaped edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/879—Bump connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/725—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a laterally-adjacent insulating package substrate, interposer or RDL
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photovoltaic Devices (AREA)
JP2013241392A 2013-11-21 2013-11-21 貫通電極基板及び貫通電極基板を用いた半導体装置 Active JP5846185B2 (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP2013241392A JP5846185B2 (ja) 2013-11-21 2013-11-21 貫通電極基板及び貫通電極基板を用いた半導体装置
PCT/JP2014/080649 WO2015076301A1 (ja) 2013-11-21 2014-11-19 貫通電極基板及び貫通電極基板を用いた半導体装置
CN201811135601.8A CN109616459A (zh) 2013-11-21 2014-11-19 贯通电极基板及利用贯通电极基板的半导体装置
EP20163801.2A EP3690933B1 (en) 2013-11-21 2014-11-19 Through electrode substrate
CN201811131924.XA CN109616458B (zh) 2013-11-21 2014-11-19 贯通电极基板及利用贯通电极基板的半导体装置
EP14864041.0A EP3073523B1 (en) 2013-11-21 2014-11-19 Through electrode substrate and semiconductor device using through electrode substrate
EP22185677.6A EP4095895A3 (en) 2013-11-21 2014-11-19 Through electrode substrate and semiconductor device using through electrode substrate
CN201480061865.7A CN105765712B (zh) 2013-11-21 2014-11-19 贯通电极基板及利用贯通电极基板的半导体装置
US15/159,323 US10256176B2 (en) 2013-11-21 2016-05-19 Through-hole electrode substrate and semiconductor device using through-hole electrode substrate
US16/266,203 US10580727B2 (en) 2013-11-21 2019-02-04 Through-hole electrode substrate
US16/743,145 US10790221B2 (en) 2013-11-21 2020-01-15 Through-hole electrode substrate
US16/936,519 US11362028B2 (en) 2013-11-21 2020-07-23 Through-hole electrode substrate
US17/725,627 US12080637B2 (en) 2013-11-21 2022-04-21 Through-hole electrode substrate
US18/800,278 US20240404934A1 (en) 2013-11-21 2024-08-12 Through-hole electrode substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013241392A JP5846185B2 (ja) 2013-11-21 2013-11-21 貫通電極基板及び貫通電極基板を用いた半導体装置

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JP2015227286A Division JP6044697B2 (ja) 2015-11-20 2015-11-20 貫通電極基板及び貫通電極基板を用いた半導体装置

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JP2015103586A JP2015103586A (ja) 2015-06-04
JP2015103586A5 JP2015103586A5 (enExample) 2015-08-20
JP5846185B2 true JP5846185B2 (ja) 2016-01-20

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US (6) US10256176B2 (enExample)
EP (3) EP4095895A3 (enExample)
JP (1) JP5846185B2 (enExample)
CN (3) CN109616459A (enExample)
WO (1) WO2015076301A1 (enExample)

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Publication number Priority date Publication date Assignee Title
JP5846185B2 (ja) * 2013-11-21 2016-01-20 大日本印刷株式会社 貫通電極基板及び貫通電極基板を用いた半導体装置
CN107027238B (zh) * 2016-01-29 2020-08-18 奥特斯(中国)有限公司 包括铜填充多径激光钻孔的元件载体
JP2017136711A (ja) 2016-02-02 2017-08-10 セイコーエプソン株式会社 配線基板、ｍｅｍｓデバイス、液体噴射ヘッド及び液体噴射装置
US9847477B2 (en) * 2016-04-12 2017-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a bottom electrode of a magnetoresistive random access memory cell
TWI761852B (zh) 2016-06-03 2022-04-21 日商大日本印刷股份有限公司 貫通電極基板及其製造方法、以及安裝基板
JP6341245B2 (ja) 2016-09-05 2018-06-13 大日本印刷株式会社 貫通電極基板の製造方法、貫通電極基板および半導体装置
US11078112B2 (en) * 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
JP6809511B2 (ja) * 2018-07-06 2021-01-06 大日本印刷株式会社 貫通電極基板および半導体装置
JP7433318B2 (ja) * 2019-03-07 2024-02-19 アブソリックス インコーポレイテッド パッケージング基板及びこれを含む半導体装置
JP7293360B2 (ja) 2019-03-07 2023-06-19 アブソリックス インコーポレイテッド パッケージング基板及びこれを含む半導体装置
CN113424304B (zh) 2019-03-12 2024-04-12 爱玻索立克公司 装载盒及对象基板的装载方法
CN113261093B (zh) 2019-03-12 2024-04-16 爱玻索立克公司 半导体封装用基板及其制备方法以及半导体装置
WO2020185021A1 (ko) 2019-03-12 2020-09-17 에스케이씨 주식회사 패키징 기판 및 이를 포함하는 반도체 장치
WO2021157496A1 (ja) * 2020-02-07 2021-08-12 ソニーグループ株式会社 表示装置
CN111199948B (zh) * 2020-03-04 2024-11-26 日月光半导体(上海)有限公司 封装基板及其制造方法
TWI752707B (zh) * 2020-11-03 2022-01-11 財團法人工業技術研究院 具有通孔的基板及其製造方法
JP7239045B2 (ja) * 2020-12-02 2023-03-14 大日本印刷株式会社 貫通電極基板および半導体装置
JP7088271B2 (ja) * 2020-12-02 2022-06-21 大日本印刷株式会社 貫通電極基板および半導体装置
WO2024010694A1 (en) * 2022-07-07 2024-01-11 Corning Incorporated Vias including an unsymmetric tapered through-hole, devices including the vias, and methods for fabricating the vias
WO2025121374A1 (ja) * 2023-12-05 2025-06-12 大日本印刷株式会社 貫通電極基板及び貫通電極基板の製造方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4835141B1 (enExample) 1970-09-14 1973-10-26
JPS5119623B2 (enExample) 1972-03-15 1976-06-18
JPH04154187A (ja) * 1990-10-18 1992-05-27 Mitsubishi Materials Corp スルーホール配線板の構造及びその製造方法
JP2976955B2 (ja) 1997-12-19 1999-11-10 日本電気株式会社 半導体装置の製造方法
CN101232776B (zh) * 1999-09-02 2011-04-20 揖斐电株式会社 印刷布线板
SE9903995D0 (sv) 1999-11-03 1999-11-03 Astra Ab New combination
JP3789803B2 (ja) * 2001-01-30 2006-06-28 日本特殊陶業株式会社 配線基板およびその製造方法
JP2002232101A (ja) 2001-01-31 2002-08-16 Ngk Spark Plug Co Ltd 配線基板
JP4012375B2 (ja) 2001-05-31 2007-11-21 株式会社ルネサステクノロジ 配線基板およびその製造方法
JPWO2003007370A1 (ja) * 2001-07-12 2004-11-04 株式会社日立製作所 配線ガラス基板およびその製造方法ならびに配線ガラス基板に用いられる導電性ペーストおよび半導体モジュールならびに配線基板および導体形成方法
JP2003133735A (ja) * 2001-10-23 2003-05-09 Kyocera Corp 配線基板およびその製造方法ならびに電子装置
ES2233876T3 (es) 2001-12-19 2005-06-16 Astrazeneca Ab Nuevo recubrimiento de pelicula que contiene un copolimero acrilato de etilo/metacrilato de metilo y poli (acetato de vinilo).
JP4202641B2 (ja) 2001-12-26 2008-12-24 富士通株式会社 回路基板及びその製造方法
JP2003197811A (ja) * 2001-12-27 2003-07-11 Hitachi Ltd ガラス基板及びその製造方法、並びに配線基板、半導体モジュール
JP3998984B2 (ja) * 2002-01-18 2007-10-31 富士通株式会社 回路基板及びその製造方法
JP4154478B2 (ja) 2002-02-20 2008-09-24 独立行政法人産業技術総合研究所 感光性ポリイミドを用いた貫通電極形成方法
JP4022180B2 (ja) 2002-07-11 2007-12-12 大日本印刷株式会社 多層配線基板の製造方法
JP4203277B2 (ja) 2002-07-19 2008-12-24 大日本印刷株式会社 多層配線基板
JP4319831B2 (ja) 2002-12-11 2009-08-26 大日本印刷株式会社 多層配線基板の製造方法
JP2004363212A (ja) * 2003-06-03 2004-12-24 Hitachi Metals Ltd スルーホール導体を持った配線基板
JP4241202B2 (ja) 2003-06-12 2009-03-18 大日本印刷株式会社 めっきポスト型配線基板の製造方法
TWI251313B (en) 2003-09-26 2006-03-11 Seiko Epson Corp Intermediate chip module, semiconductor device, circuit board, and electronic device
JP4702794B2 (ja) 2003-10-06 2011-06-15 Ｈｏｙａ株式会社 感光性ガラス基板の貫通孔形成方法
JP4564342B2 (ja) 2004-11-24 2010-10-20 大日本印刷株式会社 多層配線基板およびその製造方法
JP4345686B2 (ja) * 2005-02-22 2009-10-14 三菱マテリアル株式会社 絶縁回路基板およびパワーモジュール
US7485967B2 (en) * 2005-03-10 2009-02-03 Sanyo Electric Co., Ltd. Semiconductor device with via hole for electric connection
JP2007067216A (ja) * 2005-08-31 2007-03-15 Sanyo Electric Co Ltd 半導体装置およびその製造方法、回路基板およびその製造方法
JP4835141B2 (ja) 2005-12-13 2011-12-14 大日本印刷株式会社 多層配線基板
JP5119623B2 (ja) 2006-08-03 2013-01-16 大日本印刷株式会社 インターポーザ基板の製造方法
JP2008124398A (ja) 2006-11-15 2008-05-29 Shinko Electric Ind Co Ltd 半導体パッケージおよびその製造方法
US20080192458A1 (en) 2007-02-12 2008-08-14 Intematix Corporation Light emitting diode lighting system
JP2009023341A (ja) 2007-06-21 2009-02-05 Dainippon Printing Co Ltd 中間転写記録媒体
JP5550076B2 (ja) * 2007-07-05 2014-07-16 オー・アー・セー・マイクロテック・アクチボラゲット 低抵抗のウエハ貫通ビア
JP5536322B2 (ja) * 2007-10-09 2014-07-02 新光電気工業株式会社 基板の製造方法
JP4722904B2 (ja) 2007-12-17 2011-07-13 イビデン株式会社 多層プリント基板の製造法
JP5331350B2 (ja) * 2008-02-18 2013-10-30 日立協和エンジニアリング株式会社 配線基板
JP5583332B2 (ja) * 2008-06-06 2014-09-03 ピーエスフォー ルクスコ エスエイアールエル スルーホール配置装置およびスルーホール配置方法
US8035219B2 (en) 2008-07-18 2011-10-11 Raytheon Company Packaging semiconductors at wafer level
JP5246103B2 (ja) * 2008-10-16 2013-07-24 大日本印刷株式会社 貫通電極基板の製造方法
JP5471268B2 (ja) * 2008-12-26 2014-04-16 大日本印刷株式会社 貫通電極基板及びその製造方法
JP4900508B2 (ja) * 2008-12-26 2012-03-21 大日本印刷株式会社 貫通電極基板及びその製造方法
JP2010165804A (ja) * 2009-01-14 2010-07-29 Panasonic Corp 半導体装置およびそれを用いた電子機器ならびに半導体装置の製造方法
CN102300820B (zh) 2009-02-02 2014-02-26 旭硝子株式会社 半导体器件构件用玻璃基板及半导体器件构件用玻璃基板的制造方法
US8925192B2 (en) 2009-06-09 2015-01-06 Ibiden Co., Ltd. Printed wiring board and method for manufacturing the same
US20110048775A1 (en) 2009-08-31 2011-03-03 Ibiden Co., Ltd. Printed wiring board and method for manufacturing the same
JP5697898B2 (ja) * 2009-10-09 2015-04-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US9420707B2 (en) 2009-12-17 2016-08-16 Intel Corporation Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
JP5560834B2 (ja) 2010-03-29 2014-07-30 住友ベークライト株式会社 絶縁基板、絶縁基板の製造方法、プリント配線基板および半導体装置
DE102010030760B4 (de) * 2010-06-30 2014-07-24 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Halbleiterbauelement mit Durchgangskontaktierungen mit einem Verspannungsrelaxationsmechanismus und Verfahren zur Herstellung eines solchen
US9107306B2 (en) * 2010-10-14 2015-08-11 Panasonic Intellectual Property Management Co., Ltd. Hybrid substrate, method for manufacturing the same, and semiconductor integrated circuit package
US8736066B2 (en) * 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US20120229990A1 (en) * 2011-03-08 2012-09-13 Ibiden Co., Ltd. Multilayer printed wiring board and method for manufacturing multilayer printed wiring board
US20120235969A1 (en) * 2011-03-15 2012-09-20 Qualcomm Mems Technologies, Inc. Thin film through-glass via and methods for forming same
KR101296996B1 (ko) * 2011-07-25 2013-08-14 니혼도꾸슈도교 가부시키가이샤 배선기판
US20130048355A1 (en) * 2011-08-30 2013-02-28 Ibiden Co., Ltd. Printed wiring board
CN103219302B (zh) * 2012-01-19 2016-01-20 欣兴电子股份有限公司 穿孔中介板
SE537874C2 (sv) * 2012-04-13 2015-11-03 Silex Microsystems Ab CTE-anpassad interposer och metod att tillverka en sådan
JP2013229421A (ja) 2012-04-25 2013-11-07 Kyocer Slc Technologies Corp 配線基板
US8900008B2 (en) * 2012-05-25 2014-12-02 International Business Machines Corporation Universal press-fit connection for printed circuit boards
CN103258806B (zh) * 2013-05-08 2016-01-27 日月光半导体制造股份有限公司 具桥接结构的半导体封装构造及其制造方法
JP5846185B2 (ja) * 2013-11-21 2016-01-20 大日本印刷株式会社 貫通電極基板及び貫通電極基板を用いた半導体装置

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