JP5719282B2 - 多結晶シリコンの製造方法 - Google Patents

多結晶シリコンの製造方法 Download PDF

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Publication number
JP5719282B2
JP5719282B2 JP2011259971A JP2011259971A JP5719282B2 JP 5719282 B2 JP5719282 B2 JP 5719282B2 JP 2011259971 A JP2011259971 A JP 2011259971A JP 2011259971 A JP2011259971 A JP 2011259971A JP 5719282 B2 JP5719282 B2 JP 5719282B2
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Prior art keywords
gas
reaction
temperature
silicon
silicon rod
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JP2011259971A
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English (en)
Japanese (ja)
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JP2013112566A (ja
JP2013112566A5 (https=
Inventor
靖志 黒澤
靖志 黒澤
祢津　茂義
茂義 祢津
成大 星野
成大 星野
哲郎 岡田
哲郎 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Priority to JP2011259971A priority Critical patent/JP5719282B2/ja
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to KR1020147017485A priority patent/KR101821851B1/ko
Priority to PCT/JP2012/007674 priority patent/WO2013080556A1/ja
Priority to EP12852947.6A priority patent/EP2786963B1/en
Priority to MYPI2014701175A priority patent/MY171148A/en
Priority to US14/354,042 priority patent/US9394606B2/en
Priority to RU2014126432/05A priority patent/RU2581090C2/ru
Priority to CN201280058859.7A priority patent/CN103958406B/zh
Publication of JP2013112566A publication Critical patent/JP2013112566A/ja
Publication of JP2013112566A5 publication Critical patent/JP2013112566A5/ja
Application granted granted Critical
Publication of JP5719282B2 publication Critical patent/JP5719282B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H01L21/2053—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
JP2011259971A 2011-11-29 2011-11-29 多結晶シリコンの製造方法 Active JP5719282B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011259971A JP5719282B2 (ja) 2011-11-29 2011-11-29 多結晶シリコンの製造方法
PCT/JP2012/007674 WO2013080556A1 (ja) 2011-11-29 2012-11-29 多結晶シリコンの製造方法および多結晶シリコン製造用反応炉
EP12852947.6A EP2786963B1 (en) 2011-11-29 2012-11-29 Production method for polycrystalline silicon, and reactor for polycrystalline silicon production
MYPI2014701175A MY171148A (en) 2011-11-29 2012-11-29 Production method for polycrystalline silicon, and reactor for polycrystalline silicon production
KR1020147017485A KR101821851B1 (ko) 2011-11-29 2012-11-29 다결정 실리콘의 제조 방법 및 다결정 실리콘 제조용 반응로
US14/354,042 US9394606B2 (en) 2011-11-29 2012-11-29 Production method for polycrystalline silicon, and reactor for polycrystalline silicon production
RU2014126432/05A RU2581090C2 (ru) 2011-11-29 2012-11-29 Способ получения поликристаллического кремния и реактор для получения поликристаллического кремния
CN201280058859.7A CN103958406B (zh) 2011-11-29 2012-11-29 多晶硅的制造方法和多晶硅制造用反应炉

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011259971A JP5719282B2 (ja) 2011-11-29 2011-11-29 多結晶シリコンの製造方法

Publications (3)

Publication Number Publication Date
JP2013112566A JP2013112566A (ja) 2013-06-10
JP2013112566A5 JP2013112566A5 (https=) 2014-01-23
JP5719282B2 true JP5719282B2 (ja) 2015-05-13

Family

ID=48535045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011259971A Active JP5719282B2 (ja) 2011-11-29 2011-11-29 多結晶シリコンの製造方法

Country Status (8)

Country Link
US (1) US9394606B2 (https=)
EP (1) EP2786963B1 (https=)
JP (1) JP5719282B2 (https=)
KR (1) KR101821851B1 (https=)
CN (1) CN103958406B (https=)
MY (1) MY171148A (https=)
RU (1) RU2581090C2 (https=)
WO (1) WO2013080556A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206266A (zh) * 2016-07-22 2016-12-07 上海芯导电子科技有限公司 一种推阱工艺

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6038625B2 (ja) * 2012-12-10 2016-12-07 株式会社トクヤマ 多結晶シリコンロッドの製造方法と製造装置
JP2016016999A (ja) * 2014-07-04 2016-02-01 信越化学工業株式会社 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置
JP2016041636A (ja) * 2014-08-18 2016-03-31 信越化学工業株式会社 多結晶シリコン棒の製造方法および多結晶シリコン棒
JP6181620B2 (ja) 2014-09-04 2017-08-16 信越化学工業株式会社 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊
JP6345108B2 (ja) * 2014-12-25 2018-06-20 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
JP6370232B2 (ja) * 2015-01-28 2018-08-08 株式会社トクヤマ 多結晶シリコンロッドの製造方法
JP6314097B2 (ja) 2015-02-19 2018-04-18 信越化学工業株式会社 多結晶シリコン棒
JP6343592B2 (ja) * 2015-07-28 2018-06-13 信越化学工業株式会社 多結晶シリコン製造用反応炉及び多結晶シリコンの製造方法
JP6378147B2 (ja) * 2015-09-04 2018-08-22 信越化学工業株式会社 多結晶シリコン棒の製造方法およびｃｚ単結晶シリコンの製造方法
JP6440601B2 (ja) * 2015-09-04 2018-12-19 信越化学工業株式会社 多結晶シリコン棒の製造方法およびｆｚ単結晶シリコンの製造方法
TWI791486B (zh) * 2017-02-20 2023-02-11 日商德山股份有限公司 多晶矽的製造方法
CN106865551B (zh) * 2017-03-24 2017-12-19 亚洲硅业（青海）有限公司 用于48对棒多晶硅还原炉的喷嘴
CN109399641B (zh) * 2018-12-25 2021-01-01 亚洲硅业(青海)股份有限公司 一种进料流速可变的还原炉底盘装置
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
JP7022874B1 (ja) * 2020-11-27 2022-02-18 株式会社トクヤマ 多結晶シリコンロッド、多結晶シリコンロッドの製造方法および多結晶シリコンの熱処理方法
CN112624121B (zh) * 2020-12-21 2021-09-28 亚洲硅业(青海)股份有限公司 多晶硅生产控制系统及控制方法
JP7812037B1 (ja) * 2024-08-09 2026-02-06 株式会社トクヤマ ポリシリコン塊状物の製造方法
WO2026034125A1 (ja) * 2024-08-09 2026-02-12 株式会社トクヤマ ポリシリコン塊状物の製造方法
CN120247033B (zh) * 2025-04-02 2026-03-06 句容市星辰新型材料有限公司 一种多晶硅还原方法及设备
CN120383316B (zh) * 2025-06-30 2025-09-02 江苏鑫华半导体科技股份有限公司 基于硅芯棒生长特征的多晶硅沉积进气装置及控制方法

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DE2727305A1 (de) 1977-06-16 1979-01-04 Siemens Ag Verfahren zum abscheiden von feinkristallinem silicium aus der gasphase an der oberflaeche eines erhitzten traegerkoerpers
DE2831816A1 (de) 1978-07-19 1980-01-31 Siemens Ag Verfahren zum abscheiden von silicium in feinkristalliner form
JP3343508B2 (ja) * 1997-05-26 2002-11-11 株式会社トクヤマ 表面状態の改善された多結晶シリコンロッド
JP3660617B2 (ja) * 2001-10-23 2005-06-15 住友チタニウム株式会社 半導体級多結晶シリコンの製造方法
DE10392291B4 (de) * 2002-02-14 2013-01-31 Rec Silicon Inc. Energie-effizientes Verfahren zum Züchten von polykristallinem Silicium
DE102007047210A1 (de) * 2007-10-02 2009-04-09 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu seiner Herstellung
JP5339945B2 (ja) 2009-02-04 2013-11-13 株式会社トクヤマ 多結晶シリコンの製法
JP5651104B2 (ja) * 2009-02-27 2015-01-07 株式会社トクヤマ 多結晶シリコンロッド及びその製造装置
KR101708058B1 (ko) * 2009-07-15 2017-02-17 미쓰비시 마테리알 가부시키가이샤 다결정 실리콘의 제조 방법, 다결정 실리콘의 제조 장치, 및 다결정 실리콘
JP5655429B2 (ja) * 2009-08-28 2015-01-21 三菱マテリアル株式会社 多結晶シリコンの製造方法、製造装置及び多結晶シリコン
JP5560018B2 (ja) * 2009-10-14 2014-07-23 信越化学工業株式会社 多結晶シリコン製造用芯線ホルダおよび多結晶シリコンの製造方法
RU106893U1 (ru) * 2011-02-28 2011-07-27 Открытое акционерное общество "Красноярский машиностроительный завод" (ОАО "Красмаш") Реактор для выращивания стержней поликристаллического кремния

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206266A (zh) * 2016-07-22 2016-12-07 上海芯导电子科技有限公司 一种推阱工艺
CN106206266B (zh) * 2016-07-22 2020-02-04 上海芯导电子科技有限公司 一种推阱工艺

Also Published As

Publication number Publication date
MY171148A (en) 2019-09-27
RU2581090C2 (ru) 2016-04-10
EP2786963A1 (en) 2014-10-08
US9394606B2 (en) 2016-07-19
EP2786963B1 (en) 2020-02-12
EP2786963A4 (en) 2015-09-02
CN103958406B (zh) 2016-05-25
WO2013080556A1 (ja) 2013-06-06
KR20140103127A (ko) 2014-08-25
JP2013112566A (ja) 2013-06-10
RU2014126432A (ru) 2016-01-27
US20140302239A1 (en) 2014-10-09
KR101821851B1 (ko) 2018-01-24
CN103958406A (zh) 2014-07-30

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