JP5715835B2 - 半導体パッケージ及びその製造方法 - Google Patents

半導体パッケージ及びその製造方法 Download PDF

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Publication number
JP5715835B2
JP5715835B2 JP2011013180A JP2011013180A JP5715835B2 JP 5715835 B2 JP5715835 B2 JP 5715835B2 JP 2011013180 A JP2011013180 A JP 2011013180A JP 2011013180 A JP2011013180 A JP 2011013180A JP 5715835 B2 JP5715835 B2 JP 5715835B2
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layer
insulating layer
semiconductor package
wiring
wiring layer
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Japanese (ja)
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JP2012156251A (ja
JP2012156251A5 (enExample
Inventor
経塚　正宏
正宏 経塚
立岩　昭彦
昭彦 立岩
田中　正人
正人 田中
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2011013180A priority Critical patent/JP5715835B2/ja
Priority to US13/354,663 priority patent/US9142524B2/en
Publication of JP2012156251A publication Critical patent/JP2012156251A/ja
Publication of JP2012156251A5 publication Critical patent/JP2012156251A5/ja
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    • H10W70/09—
    • H10W70/60—
    • H10W70/093—
    • H10W72/241—
    • H10W72/9413—
    • H10W74/142—
    • H10W90/00—
    • H10W90/722—

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  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
JP2011013180A 2011-01-25 2011-01-25 半導体パッケージ及びその製造方法 Active JP5715835B2 (ja)

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Application Number Priority Date Filing Date Title
JP2011013180A JP5715835B2 (ja) 2011-01-25 2011-01-25 半導体パッケージ及びその製造方法
US13/354,663 US9142524B2 (en) 2011-01-25 2012-01-20 Semiconductor package and method for manufacturing semiconductor package

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JP2011013180A JP5715835B2 (ja) 2011-01-25 2011-01-25 半導体パッケージ及びその製造方法

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JP2012156251A JP2012156251A (ja) 2012-08-16
JP2012156251A5 JP2012156251A5 (enExample) 2013-12-26
JP5715835B2 true JP5715835B2 (ja) 2015-05-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11882652B2 (en) 2021-05-06 2024-01-23 Samsung Electro-Mechanics Co., Ltd. Printed circuit board

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CN103730436B (zh) * 2012-10-15 2016-11-16 景硕科技股份有限公司 线路载板的增层结构
JP2014086598A (ja) * 2012-10-24 2014-05-12 Hitachi Chemical Co Ltd 半導体装置の製造方法、半導体装置、及び感光性樹脂組成物
JP6161380B2 (ja) * 2013-04-17 2017-07-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102250997B1 (ko) 2014-05-02 2021-05-12 삼성전자주식회사 반도체 패키지
US9728498B2 (en) * 2015-06-30 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure
US9711458B2 (en) * 2015-11-13 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method for chip package
CN109689955B (zh) 2016-04-07 2022-04-29 先进E纺织品有限公司 关于结合有电子装置的织物的改进
US10600748B2 (en) 2016-06-20 2020-03-24 Samsung Electronics Co., Ltd. Fan-out semiconductor package
TWI584425B (zh) * 2016-06-27 2017-05-21 力成科技股份有限公司 扇出型晶圓級封裝結構
JP2018018936A (ja) * 2016-07-27 2018-02-01 イビデン株式会社 配線基板
US10109550B2 (en) * 2016-08-12 2018-10-23 Qorvo Us, Inc. Wafer-level package with enhanced performance
JP6291094B2 (ja) * 2017-01-24 2018-03-14 信越化学工業株式会社 積層型半導体装置、及び封止後積層型半導体装置
US11152363B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
WO2019195428A1 (en) 2018-04-04 2019-10-10 Qorvo Us, Inc. Gallium-nitride-based module with enhanced electrical performance and process for making the same
US12046505B2 (en) 2018-04-20 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
CN118213279A (zh) 2018-07-02 2024-06-18 Qorvo美国公司 Rf半导体装置及其制造方法
CN110783300B (zh) * 2018-07-26 2021-08-13 钰桥半导体股份有限公司 具有调节件及防裂结构的导线架衬底及其覆晶组体
JP7211757B2 (ja) * 2018-10-22 2023-01-24 新光電気工業株式会社 配線基板
US11646242B2 (en) 2018-11-29 2023-05-09 Qorvo Us, Inc. Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
KR20250027591A (ko) 2019-01-23 2025-02-26 코르보 유에스, 인크. Rf 반도체 디바이스 및 이를 형성하는 방법
US12046483B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11387157B2 (en) 2019-01-23 2022-07-12 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046570B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12057374B2 (en) 2019-01-23 2024-08-06 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12125825B2 (en) 2019-01-23 2024-10-22 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11139179B2 (en) * 2019-09-09 2021-10-05 Advanced Semiconductor Engineering, Inc. Embedded component package structure and manufacturing method thereof
US12074086B2 (en) 2019-11-01 2024-08-27 Qorvo Us, Inc. RF devices with nanotube particles for enhanced performance and methods of forming the same
US11646289B2 (en) 2019-12-02 2023-05-09 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11923238B2 (en) 2019-12-12 2024-03-05 Qorvo Us, Inc. Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive
US12129168B2 (en) 2019-12-23 2024-10-29 Qorvo Us, Inc. Microelectronics package with vertically stacked MEMS device and controller device
EP4260369A2 (en) 2020-12-11 2023-10-18 Qorvo US, Inc. Multi-level 3d stacked package and methods of forming the same
US12062571B2 (en) 2021-03-05 2024-08-13 Qorvo Us, Inc. Selective etching process for SiGe and doped epitaxial silicon
CN114188290B (zh) * 2021-12-03 2024-11-22 江苏中科智芯集成科技有限公司 一种降低翘曲的扇出型封装结构

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JP4072176B2 (ja) * 2005-08-29 2008-04-09 新光電気工業株式会社 多層配線基板の製造方法
CN102098876B (zh) * 2006-04-27 2014-04-09 日本电气株式会社 用于电路基板的制造工艺
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JP4842167B2 (ja) * 2007-02-07 2011-12-21 新光電気工業株式会社 多層配線基板の製造方法
EP2372756A1 (en) * 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
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JP5496445B2 (ja) * 2007-06-08 2014-05-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5295596B2 (ja) * 2008-03-19 2013-09-18 新光電気工業株式会社 多層配線基板およびその製造方法
JP4489821B2 (ja) * 2008-07-02 2010-06-23 新光電気工業株式会社 半導体装置及びその製造方法
KR101517598B1 (ko) * 2008-07-21 2015-05-06 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP5510323B2 (ja) * 2008-07-23 2014-06-04 日本電気株式会社 コアレス配線基板、半導体装置及びそれらの製造方法
US8304915B2 (en) * 2008-07-23 2012-11-06 Nec Corporation Semiconductor device and method for manufacturing the same
US8692135B2 (en) * 2008-08-27 2014-04-08 Nec Corporation Wiring board capable of containing functional element and method for manufacturing same
JP5249173B2 (ja) * 2009-10-30 2013-07-31 新光電気工業株式会社 半導体素子実装配線基板及びその製造方法
JP2011187473A (ja) * 2010-03-04 2011-09-22 Nec Corp 半導体素子内蔵配線基板
JP5570855B2 (ja) * 2010-03-18 2014-08-13 新光電気工業株式会社 配線基板及びその製造方法並びに半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11882652B2 (en) 2021-05-06 2024-01-23 Samsung Electro-Mechanics Co., Ltd. Printed circuit board

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US20120187557A1 (en) 2012-07-26
US9142524B2 (en) 2015-09-22
JP2012156251A (ja) 2012-08-16

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